CN206666681U - A kind of Novel single crystal furnace of Te-Zn-Cd monocrystal - Google Patents
A kind of Novel single crystal furnace of Te-Zn-Cd monocrystal Download PDFInfo
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- CN206666681U CN206666681U CN201720321050.9U CN201720321050U CN206666681U CN 206666681 U CN206666681 U CN 206666681U CN 201720321050 U CN201720321050 U CN 201720321050U CN 206666681 U CN206666681 U CN 206666681U
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Abstract
The utility model discloses a kind of Novel single crystal furnace of Te-Zn-Cd monocrystal, provided with body of heater and heating power supply, quartz ampoule is provided with burner hearth, crucible is provided with quartz ampoule, bottom is provided with seed crystal chamber in crucible, support frame is provided with below quartz ampoule, the upper and lower ends of burner hearth are provided with seal plug, are sequentially provided with nine heating zones in the burner hearth of the body of heater from top to bottom；Each heating zone is provided with the electrode and cable, autocontrol switch connected with power cabinet, is additionally provided with temperature control system.The utility model is applied to the growth of Te-Zn-Cd monocrystal, eliminates mechanical movement, forms shockproof growing environment, and subregion neatly controls growth temperature, substantially reduces temperature increasing for melting materials and connects the time of seed crystal, improves the quality and production efficiency of monocrystalline.And compact integral structure, floor space is small, reduces equipment cost, and installation is simple, and Programmed control, and operation is accurate, and repeatability is stable.Major diameter Te-Zn-Cd monocrystal body can be comparatively fast generated using the equipment.
Description
Technical field
Single crystal preparation technical field is the utility model is related to, particularly a kind of Novel single crystal furnace of Te-Zn-Cd monocrystal.
Background technology
Te-Zn-Cd monocrystal body has wider band gap, and higher infrared transmittivity is a kind of preferably for growing tellurium cadmium
The backing material of mercury epitaxial film.Simultaneously as its have high energy resolution, intrinsic detection efficient height, small volume, can be normal
The advantages that being used under temperature, it is to manufacture the ideal semi-conducting material of indoor temperature nucleus radiation detector.In order to obtain large scale, high-quality
The cadmium-zinc-teiluride CdZnTe monocrystal of amount.For a long time, people have carried out the growth of Te-Zn-Cd monocrystal body using a variety of growing methods
Research, including：Vapor phase method, vertical bridgman method, zone-melting process, flux growth metrhod, VGF, mobile heating zone method,
Horizontal Bridgman method, high pressure Bridgman method, bavin can Laski method, Crystal Growth in Space etc..Wherein, vertical ladder
It is the melt growth method generally used in the last few years to spend freezing method growing tellurium zinc cadmium crystal.These methods respectively have different spies
Point, there is certain practicality.But wherein more counting method operations are more complicated, and growth time is longer, and crystal mass is not ideal enough.
Mechanical elevating moving component is particularly designed with greatly, in crystal growing process, is mixed with elevating movement, is easily shaken, shadow
Ring monocrystalline quality.Therefore, it is necessary to carry out fusion improvement to it, propose a kind of more preferable growth apparatus, with meet industrial production and
Scientific research obtains more high-quality environmental protection and energy saving effect easy to operate to the needs of Te-Zn-Cd monocrystal body.
Utility model content
The purpose of this utility model is in order to solve the above-mentioned technical problem to propose a kind of new monocrystalline of Te-Zn-Cd monocrystal
Stove.The utility model has merged the sophisticated equipment and advanced technologies of a variety of Te-Zn-Cd monocrystal growths, forms Te-Zn-Cd monocrystal life
Long Novel furnace and novel process.Te-Zn-Cd monocrystal is realized in growth course, position of the crucible in burner hearth is fixed, profit
Substitute existing lowering or hoisting gear with the thermograde change in location of thermal field in stove, so as to reach the purpose of growth crystal, save
Mechanical movement, forms shockproof growing environment, and subregion neatly controls growth temperature, substantially reduces temperature increasing for melting materials and connects seed
The brilliant time, improve the quality and production efficiency of monocrystalline.And compact integral structure, floor space is small, reduces equipment cost,
Installation is simple, and Programmed control, and operation is accurate, and repeatability is stable.Major diameter cadmium-zinc-teiluride can be comparatively fast generated using the equipment
Monocrystal.
To achieve the above object, the utility model takes following technical scheme：
A kind of Novel single crystal furnace of Te-Zn-Cd monocrystal, provided with body of heater and heating power supply, quartz ampoule is provided with burner hearth, quartz
Crucible is provided with pipe, lower section is provided with seed crystal chamber in crucible, support frame is provided with below quartz ampoule, the upper and lower ends of burner hearth are provided with close
Block head, it is characterized in that：Nine heating zones are sequentially provided with the burner hearth of the body of heater from top to bottom, i.e.,：Firstth area, the secondth area,
3rd area, the 4th area, the 5th area, the 6th area, SECTOR-SEVEN, Section Eight, the 9th area；Each area is each provided with what is connected with power cabinet
Electrode and cable；And temperature control system is additionally provided with, each area is each provided with autocontrol switch, and is carried out by signal wire and controller
Control connection, temperature control galvanic couple and thermometric thermometric galvanic couple are additionally provided with each area, and each area centre position places temperature control galvanic couple and is：Control
Warm galvanic couple 1- temperature controls galvanic couple 9；Meanwhile in the middle part of the head of seed crystal, afterbody, shouldering portion end and crystal growth and afterbody is put respectively
Put thermometric galvanic couple i.e.：Thermometric galvanic couple 1- thermometrics galvanic couple 5；The temperature control galvanic couple and thermometric galvanic couple carry out signal with controller and are connected,
The real crystal surface temperature that temperature control system is obtained as measured by thermometric galvanic couple, adjust heated in areas corresponding to temperature control galvanic couple
Power size, to realize the temperature control in different zones；Power cabinet, cable, electrode, temperature control galvanic couple, thermometric galvanic couple and
Controller forms temperature control system.
Pressure sensor is provided with burner hearth, the pressure sensor carries out signal with the controller and is connected, when in burner hearth
When pressure does not meet the normal value of setting, the alarm for starting setting is alarmed, and sends alarm signal.
The controller is additionally provided with wireless signal transmission or receiving module, can be by the running temperature, pressure, time of growth furnace
Signal, alarm signal are wirelessly sent on the monitoring server and operator on duty's mobile phone of setting, and receive the prison of monitoring server
Control signal.
The beneficial effects of the utility model are：
1st, bushing position is motionless in growth course, and the position of body of heater is fixed, and any machinery does not occur in growth course
Motion, realize that crystal grows under absolute shockproof environment；
The 2nd, polycrystal material is averagely positioned over to multistage heating area, by the heating-up temperature of Programmed control different zones, realized
Growth district is gradually risen from bottom to top, i.e. crystal growth is realized in thermal field movement, and multistage heating area can realize preferable growth ring
Border；
3rd, due to adding excessive Te, the growth temperature of crystal can drop to 700 DEG C -900 from 1092 DEG C -1295 DEG C
DEG C, growth temperature, impurity concentration and defect concentration are significantly reduced, and add the service life of equipment；
4th, computer programing controls, and temperature-controlled precision is high, reproducible, improves the stability of thermal field.
5th, obtain monocrystal rod be cylinder, can direct slicing, utilization rate height, substantially reduce raw material production cost.
6th, crucible or body of heater do not move, and reduce the free space in burner hearth, suppress cross-ventilation, improve the stabilization of thermal field
Property, it is ensured that grow the monocrystal of major diameter.
Brief description of the drawings
Fig. 1 is overall structure diagram of the present utility model；
Fig. 2 is body of heater cross section structure diagram of the present utility model.
Embodiment：
The utility model is illustrated with reference to the accompanying drawings and examples：
Example 1：Referring to accompanying drawing, a kind of Novel single crystal furnace of Te-Zn-Cd monocrystal, provided with body of heater 3 and heating power supply, in burner hearth 6
It is interior to be provided with quartz ampoule 5,3 inches of PBN crucibles are provided with quartz ampoule, bottom is provided with seed crystal chamber 13 in crucible, is set below quartz ampoule
There is support frame 10, the upper and lower ends of burner hearth are provided with seal plug 7,8, nine are sequentially provided with from top to bottom in the burner hearth 6 of the body of heater 3
Individual heating zone, i.e.,：Firstth area, the secondth area, the 3rd area, the 4th area, the 5th area, the 6th area, SECTOR-SEVEN, Section Eight, the 9th area；Often
Individual area is each provided with the electrode 4 and cable 2 connected with power cabinet 1；And temperature control system is additionally provided with, each area is each provided with automatic control
Switch, and be controlled and be connected with controller 11 by signal wire 12, temperature control galvanic couple and thermometric galvanic couple 9 are additionally provided with each area,
Place in centre position temperature control galvanic couple in each area：Temperature control galvanic couple 1- temperature controls galvanic couple 9；Meanwhile in the head of seed crystal 14, afterbody, put
In the middle part of shoulder end and crystal growth and afterbody places thermometric galvanic couple i.e. respectively：Thermometric galvanic couple 1- thermometrics galvanic couple 5；The temperature control electricity
Even summation thermometric galvanic couple carries out signal with controller and is connected, the real crystal surface that temperature control system is obtained as measured by thermometric galvanic couple
Temperature, heated in areas power size corresponding to temperature control galvanic couple is adjusted, to realize the temperature control in different zones；Power supply
Cabinet, cable, electrode, temperature control galvanic couple, thermometric galvanic couple and controller composition temperature control system.Pressure sensor is provided with burner hearth, should
Pressure sensor carries out signal with the controller and is connected, and when pressure in the burner hearth does not meet the normal value of setting, starts and sets
Alarm alarmed, and send alarm signal.The controller is additionally provided with wireless signal transmission or receiving module, can be by life
Running temperature, pressure, time signal, the alarm signal of long stove are wirelessly sent to the monitoring server and operator on duty's mobile phone of setting
On, and receive the monitoring signal of monitoring server.
Using the monocrystalline growing process of above-mentioned Te-Zn-Cd monocrystal stove, there are following steps：
1) dispensing, tube sealing：
Stoichiometric is met into Cd1-xZnxTe (x=0.04) synthesis after 4 kilograms of cadmium-zinc-teiluride polycrystal materials, 1500 grams
Te (99.99999% high pure raw material) and<111>The seed crystal in direction loads in 3 inches of PBN crucibles, is put into quartz ampoule, adds
Lid quartz cap.Quartz ampoule vacuumizes, and treats that vacuum reaches 2.3 × 10-5Sealed during Pa using oxyhydrogen flame welding gun.
2) shove charge：
Quartz ampoule after sealing is loaded vertically into single crystal growing furnace, bottom bearing height is adjusted, makes the cadmium-zinc-teiluride in the crucible
Polycrystal material correspond to single crystal growing furnace the 4th, 5,6th area；
3) galvanic couple is installed:
Respectively in the firstth area of single crystal growing furnace, the secondth area, the 3rd area, the 4th area, the 5th area, the 6th area, SECTOR-SEVEN, the 8th
Area, the 9th area take centre position to place temperature-controlling thermal couple；Meanwhile in the head of the seed crystal and afterbody, shouldering portion distal end and crystal
Growth middle part and afterbody also place temperature-measuring heat couple respectively；
4) data input：
By each growth phase temperature in the firstth area to the 9th area, the setting data input controller of time, each growth phase
Including heating, material, seed crystal, shouldering, isodiametric growth, crystal annealing, cooling are connect, inputs preset data；
5) heat：
With 8 hours heat temperature raisings, by the firstth area, the secondth area, the 3rd area, the 4th area, the 5th area, the 6th area, SECTOR-SEVEN,
8th area, the temperature control galvanic couple temperature in the 9th area are heated separately to.
6) material：
With 24 hours heat temperature raisings, then 6 hours are incubated.
7) seed crystal is connect：
With 12 hours heat temperature raisings, seed portion was in molten state, was then incubated 2 hours.
8) shouldering：
5-25 DEG C of thermal field thermograde/cm, with gradually cooling in 30 hours, then monitoring thermometric galvanic couple 3 reached 825 DEG C or so
Insulation 2 hours；
9) isodiametric growth：
Monitoring thermometric galvanic couple 5 reaches 745 DEG C, is then incubated 24 hours；
10) crystal annealing：
With 24 hours by each temperature control galvanic couple temperature drops to 600 DEG C or so in stove when, this process thermal field temperature keep it is constant.It is former
The tellurium that position annealing can be reduced effectively in crystal is mingled with content.
11) cool down：
Temperature control galvanic couple temperature is dropped to 23.5 DEG C from 600 DEG C with 24 hours.
12) discharge：
It should be pointed out that for those skilled in the art, the new utility model type of this practicality is not being departed from
On the premise of principle, some improvements and modifications can also be made, these improvements and modifications also should be regarded as the utility model patent
Protection domain.
Claims (3)
1. a kind of Novel single crystal furnace of Te-Zn-Cd monocrystal, provided with body of heater (3) and heating power supply, quartz ampoule is provided with burner hearth (6)
(5) crucible, is provided with quartz ampoule, bottom is provided with seed crystal chamber (13) in crucible, and support frame (10), burner hearth are provided with below quartz ampoule
Upper and lower ends be provided with seal plug (7,8), it is characterized in that：Nine are sequentially provided with from top to bottom in the burner hearth (6) of the body of heater (3)
Individual heating zone, i.e.,：Firstth area, the secondth area, the 3rd area, the 4th area, the 5th area, the 6th area, SECTOR-SEVEN, Section Eight, the 9th area；Often
Individual area is each provided with the electrode (4) and cable (2) connected with power cabinet (1)；And temperature control system is additionally provided with, each area is each set
Have autocontrol switch, and be controlled and be connected with controller (11) by signal wire (12), be additionally provided with each area temperature control galvanic couple and
Thermometric galvanic couple (9), each area centre position place temperature control galvanic couple and are：Temperature control galvanic couple 1- temperature controls galvanic couple 9；Meanwhile in seed crystal (14)
Head, afterbody, in the middle part of shouldering portion end and crystal growth and afterbody places thermometric galvanic couple i.e. respectively：Thermometric galvanic couple 1- thermometrics electricity
Even 5；The temperature control galvanic couple and thermometric galvanic couple carry out signal with controller and are connected, and temperature control system is obtained as measured by thermometric galvanic couple
Real crystal surface temperature, adjust temperature control galvanic couple corresponding to heated in areas power size, to realize in different zones
Temperature control；Power cabinet, cable, electrode, temperature control galvanic couple, thermometric galvanic couple and controller composition temperature control system.
2. Novel single crystal furnace according to claim 1, it is characterized in that：Pressure sensor is provided with burner hearth, the pressure passes
Sensor carries out signal with the controller and is connected, and when pressure in the burner hearth does not meet the normal value of setting, starts the alarm of setting
Device is alarmed, and sends alarm signal.
3. Novel single crystal furnace according to claim 2, it is characterized in that：The controller is additionally provided with wireless signal and sends or connect
Module is received, the running temperature of growth furnace, pressure, time signal, alarm signal can be wirelessly sent to the monitoring server of setting
On operator on duty's mobile phone, and receive the monitoring signal of monitoring server.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720321050.9U CN206666681U (en) | 2017-03-29 | 2017-03-29 | A kind of Novel single crystal furnace of Te-Zn-Cd monocrystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201720321050.9U CN206666681U (en) | 2017-03-29 | 2017-03-29 | A kind of Novel single crystal furnace of Te-Zn-Cd monocrystal |
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| CN206666681U true CN206666681U (en) | 2017-11-24 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107059132A (en) * | 2017-03-29 | 2017-08-18 | 磐石创新（北京）电子装备有限公司 | The Novel single crystal furnace and growth technique of a kind of Te-Zn-Cd monocrystal |
| CN113174626A (en) * | 2021-04-25 | 2021-07-27 | 合肥庞碲新材料科技有限公司 | Method and device for growing tellurium-zinc-cadmium single crystal |
-
2017
- 2017-03-29 CN CN201720321050.9U patent/CN206666681U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107059132A (en) * | 2017-03-29 | 2017-08-18 | 磐石创新（北京）电子装备有限公司 | The Novel single crystal furnace and growth technique of a kind of Te-Zn-Cd monocrystal |
| CN107059132B (en) * | 2017-03-29 | 2024-02-27 | 磐石创新(江苏)电子装备有限公司 | Growth method of tellurium-zinc-cadmium monocrystal |
| CN113174626A (en) * | 2021-04-25 | 2021-07-27 | 合肥庞碲新材料科技有限公司 | Method and device for growing tellurium-zinc-cadmium single crystal |
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Effective date of registration: 20201130 Address after: 221000 west side of Zhongjing 1st Road, Xuzhou Industrial Park, Jiawang District, Xuzhou City, Jiangsu Province Patentee after: PANSHI INNOVATION (JIANGSU) ELECTRONIC EQUIPMENT Co.,Ltd. Address before: 101102 Beijing Tongzhou District Beijing Tongzhou District Majuqiao Jinqiao Industrial Park Liandong u Guzhong District 89A Patentee before: PANSHI INNOVATION (BEIJING) ELECTRONIC EQUIPMENT Co.,Ltd. |