CN206635405U - A kind of magnetron sputtered vacuum electron beam evaporation device - Google Patents
A kind of magnetron sputtered vacuum electron beam evaporation device Download PDFInfo
- Publication number
- CN206635405U CN206635405U CN201720366134.4U CN201720366134U CN206635405U CN 206635405 U CN206635405 U CN 206635405U CN 201720366134 U CN201720366134 U CN 201720366134U CN 206635405 U CN206635405 U CN 206635405U
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- target
- electron beam
- beam evaporation
- magnetron sputtered
- vacuum electron
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Abstract
The utility model discloses a kind of magnetron sputtered vacuum electron beam evaporation device, the device includes vacuum chamber and power supply, substrate, PDP display, the first target, the second target and electrode are provided with vacuum chamber, magnetic control sputtering device is provided with PDP display, the first target, the second target and electrode are surrounded wherein by PDP display；Power supply includes monopole direct voltage pulse generating device and bipolar pulse generation device and switching device, monopole direct voltage pulse generating device and bipolar pulse generation device are connected with switching device respectively, and switching device is connected with the first target, the second target and electrode respectively.More than 2 microns, the mechanical tension in film will not produce damage effect to film, ensure that quality of forming film film even thickness caused by magnetron sputtered vacuum electron beam evaporation device deposition still less than 500mPa.
Description
Technical field
It the utility model is related to magnetron sputtering technique field, more particularly to a kind of magnetron sputtered vacuum electron beam evaporation plating dress
Put.
Background technology
In the prior art, magnetron sputtered vacuum electron beam evaporation device only has thickness not surpass in film caused by deposition on substrate
When crossing 2 microns, the mechanical tension in film will not just produce damage in itself to film.With the increase of the thickness of film, in film
Mechanical tension is increasing, and finally film caused by damage deposition, causes quality of forming film to be deteriorated, can not meet normally to produce need
Ask.
The content of the invention
The purpose of this utility model is to provide a kind of magnetron sputtered vacuum electron beam evaporation device, technology to be solved
Problem is how to ensure the quality of film in the case where improving film forming thickness, avoids mechanical tension from producing damage to film.
Magnetron sputtered vacuum electron beam evaporation device described in the utility model includes vacuum chamber and power supply, described vacuum
Interior is provided with substrate, PDP display, the first target, the second target and electrode, and magnetron sputtering dress is provided with described PDP display
Put, the first described target, the second target and electrode are surrounded wherein by described PDP display；It is direct that described power supply includes monopole
Voltage pulse generation device and bipolar pulse generation device and switching device, described monopole direct voltage pulse generating device
Be connected respectively with switching device with bipolar pulse generation device, described switching device respectively with the first target, the second target and electrode
Connection.
Aluminium is provided with described the first target and the second target.
Inert gas entrance is provided with the side wall of described vacuum chamber.
Described inert gas entrance is connected with argon bottle, Krypton bottle and/or xenon bottle.
The technical solution of the utility model has the following advantages that：
Film even thickness is more than 2 caused by magnetron sputtered vacuum electron beam evaporation device deposition described in the utility model
Micron, the mechanical tension in film will not produce damage effect to film, ensure that quality of forming film still less than 500mPa.
Brief description of the drawings
Fig. 1 is the structural representation of magnetron sputtered vacuum electron beam evaporation device described in the utility model.
Embodiment
Following examples are used to illustrate the utility model, but are not limited to the scope of the utility model.
As shown in figure 1, magnetron sputtered vacuum electron beam evaporation device described in the utility model includes vacuum chamber 1 and power supply
8, substrate 2, PDP display 3, the first target 4, the second target 5 and electrode 6, described PDP display 3 are provided with described vacuum chamber 1
In be provided with magnetic control sputtering device, the first described target 4, the second target 5 and electrode 6 are surrounded wherein by described PDP display 3；
Described power supply 8 includes monopole direct voltage pulse generating device 9 and bipolar pulse generation device 10 and switching device 11, institute
The monopole direct voltage pulse generating device 9 and bipolar pulse generation device 10 stated are connected with switching device 11 respectively, described
Switching device 11 is connected with the first target 4, the second target 5 and electrode 6 respectively.
Aluminium is provided with described the first target 4 and the second target 5.
Inert gas entrance 7 is provided with the side wall of described vacuum chamber 1.
Described inert gas entrance 7 is connected with argon bottle, Krypton bottle and/or xenon bottle.
Magnetron sputtered vacuum electron beam evaporation device described in the utility model operationally, by switching device 11 controls list
Pole direct voltage pulse generating device 9 and the alternation of bipolar pulse generation device 10.When monopole direct voltage pulses generation fills
When putting 9 work, the first target 4 and the second target 5 are all connected as negative electrode with monopole direct voltage pulse generating device 9, the conduct of electrode 6
Anode, the first target 4 and the second target 5 are bombarded by the magnetic control sputtering device in PDP display 3, splashed so as to form magnetic control on substrate 2
Penetrate evaporation film.When bipolar pulse generation device 10 works, the first target 4 and the second target 5 are alternately as negative electrode and anode, i.e., first
When target 4 is negative electrode, the second target 5 is anode；When first target 4 is anode, the second target 5 is negative electrode, is splashed by the magnetic control in PDP display 3
Injection device bombards the first target 4 and the second target 5, so as to form magnetron sputtering evaporation film on substrate 2.Described in the utility model
In the running of magnetron sputtered vacuum electron beam evaporation device, inert gas is sent into by inert gas entrance 7, ensures vacuum
Inert gas is full of in room 1, whole magnetron sputtering evaporation process is carried out in the atmosphere of inert gas.Inert gas can be
Argon gas, Krypton and/or xenon, and wherein any two kinds or three kinds of mixed gas.
, can be effective by the alternation of monopole direct voltage pulse generating device 9 and bipolar pulse generation device 10
Ground reduction magnetron sputtered vacuum electron beam evaporation device described in the utility model deposits the mechanical tension in the film to be formed, even if
More than 2 microns, the mechanical tension in film will not produce damage effect to film, ensure that into the thickness of film still less than 500mPa
Film quality.
Although above having made detailed description to the utility model with generality explanation and specific embodiment,
On the basis of the utility model, it can be made some modifications or improvements, this is apparent to those skilled in the art
's.Therefore, the these modifications or improvements on the basis of without departing from the utility model spirit, belonging to the utility model will
Seek the scope of protection.
Claims (4)
- A kind of 1. magnetron sputtered vacuum electron beam evaporation device, it is characterised in that described magnetron sputtered vacuum electron beam evaporation plating Device includes vacuum chamber and power supply, and substrate, PDP display, the first target, the second target and electrode, institute are provided with described vacuum chamber Magnetic control sputtering device is provided with the PDP display stated, the first described target, the second target and electrode are by described PDP display bag It is trapped among wherein；Described power supply includes monopole direct voltage pulse generating device and bipolar pulse generation device and switching dress Put, described monopole direct voltage pulse generating device and bipolar pulse generation device are connected with switching device respectively, described Switching device is connected with the first target, the second target and electrode respectively.
- 2. magnetron sputtered vacuum electron beam evaporation device as claimed in claim 1, it is characterised in that the first described target and Aluminium is provided with two targets.
- 3. magnetron sputtered vacuum electron beam evaporation device as claimed in claim 1, it is characterised in that the side of described vacuum chamber Inert gas entrance is provided with wall.
- 4. magnetron sputtered vacuum electron beam evaporation device as claimed in claim 3, it is characterised in that described inert gas enters Mouth is connected with argon bottle, Krypton bottle and/or xenon bottle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720366134.4U CN206635405U (en) | 2017-04-10 | 2017-04-10 | A kind of magnetron sputtered vacuum electron beam evaporation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720366134.4U CN206635405U (en) | 2017-04-10 | 2017-04-10 | A kind of magnetron sputtered vacuum electron beam evaporation device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206635405U true CN206635405U (en) | 2017-11-14 |
Family
ID=60248328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720366134.4U Expired - Fee Related CN206635405U (en) | 2017-04-10 | 2017-04-10 | A kind of magnetron sputtered vacuum electron beam evaporation device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206635405U (en) |
-
2017
- 2017-04-10 CN CN201720366134.4U patent/CN206635405U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171114 Termination date: 20200410 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |