CN206628462U - Electric semiconductor cooling device - Google Patents
Electric semiconductor cooling device Download PDFInfo
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- CN206628462U CN206628462U CN201621262091.7U CN201621262091U CN206628462U CN 206628462 U CN206628462 U CN 206628462U CN 201621262091 U CN201621262091 U CN 201621262091U CN 206628462 U CN206628462 U CN 206628462U
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Abstract
A kind of package assembly by simplifying electric semiconductor packaging body is the utility model is related to, prevents that electric semiconductor damages when electric semiconductor from inserting cooling device, so as to keep the electric semiconductor cooling device of the reliability of cooling effectiveness and performance, including：Top case is flowed into, it flows into the cooling water from outside；Multiple cooling duct portions, its one end are connected to the inflow top case, contact with the electric semiconductor face between the multiple electric semiconductor and are abreast laminated, and inside flows into the cooling water from the inflow top case to cool down the heating of the electric semiconductor；Top case is discharged, it is connected to the other end in the cooling duct portion with the inflow top case with being separated by, and discharges the cooling water flowed into from the inflow top case；Multiple guide portions, it is incorporated into the two sides in the cooling duct portion being layered on top of each other by insert-molding, guides the insertion for inserting the electric semiconductor between the multiple cooling duct portion.
Description
Technical field
Electric semiconductor cooling device is the utility model is related to, more particularly to it is a kind of by simplifying electric semiconductor encapsulation
The package assembly of body, prevent that electric semiconductor damages when electric semiconductor from inserting cooling device, so as to keep cooling effectiveness
Reliability and performance electric semiconductor cooling device.
Background technology
Generally, electric semiconductor packaging body is connected to supply multiple electric semiconductors of power supply, by direct current or exchange shape
The voltage of state and the appropriate form and size needed for current transformation into system.
Electric semiconductor packaging body is widely used in the industry such as inverter, UPS supply device, bonding machine, elevator
Application field and automotive field etc..
Generally, the multiple electric semiconductors and and electric power of alternately laminated serial connection are distinguished in electric semiconductor packaging body
The one side and another side of semiconductor are contacted with the cooling device of heat produced by cooling down electric semiconductor.
Also, its structure passes through bending section etc for multiple electric semiconductors of stacking and the both ends of multiple cooling devices
Pressurization fixed component compression fix.
Electric semiconductor packaging body uses multiple electric semiconductors, and generally, the situation using six is more.
In this case, variform can be designed to according to collocation method, but it is generally pre- so that three semiconductors to be separated by
Compartment of terrain configuration is determined in a layer, and the mode for being configured to upper and lower two layers uses.
This electric semiconductor packaging body uses multiple electric semiconductors, during power converter, electric semiconductor hair
Heat is lost.
Especially, large-capacity power semiconductor package body, the heat loss that electric semiconductor occurs are bigger.
The heat loss that electric semiconductor occurs will cause the temperature of electric semiconductor itself to rise, and the temperature is increased beyond
Electric semiconductor damages in the case of the operating temperature boundary of electric semiconductor.
As described above, the temperature of electric semiconductor rises the damage for causing electric semiconductor, or the vibration from outside
It was that artificial open is fixed in the past or impact causes electric semiconductor to damage and need in the case of changing the electric semiconductor damaged
The bending section of the laminated arrangement of electric semiconductor and the electric semiconductor for changing damage.
Herein, cooling device can be sent out during the bending section of fixed electric semiconductor is opened to change electric semiconductor
Change shape.
Therefore, make a difference electric semiconductor packaging body long-term airtight reliability the problem of.
Also, for now, need to fix using position in addition in order to which electric semiconductor is fixed on into cooling device
Terminal board, need to use cooler cover in addition to maximize the heat exchanger effectiveness of electric semiconductor and cooling device, therefore have
Have electric semiconductor packaging body it is complicated the problem of.
Therefore, it is necessary to the multiple electric semiconductors of Accurate align and multiple cooler cover centers and be assembled, but due to electricity
Power semiconductor package body it is complicated, therefore can not when re-assemblying multiple electric semiconductors of decomposition and multiple cooler covers
The problem of being assembled in the state of Accurate align electric semiconductor and cooler cover center, therefore frequently occurring to assemble by mistake.
For these reasons, this area is exploring the package assembly that can simplify electric semiconductor packaging body and is keeping electric power
The reliability and performance of semiconductor package body performance, and the scheme of electric semiconductor packaging body can be effectively assembled, but extremely
The present does not obtain satisfactory result also.
Utility model content
Technical problem
The purpose of this utility model is the package assembly for providing a kind of simplified electric semiconductor packaging body and keeps electric power
The cooling performance of semiconductor package body, it can effectively assemble the electric semiconductor cooling device of electric semiconductor packaging body.
Technical scheme
Included according to the electric semiconductor of the utility model embodiment with cooling device：Top case is flowed into, is come from wherein flowing into
Outside cooling water；Multiple cooling duct portions, its one end is connected to the inflow top case, between the multiple electric semiconductor
Contact with the electric semiconductor face and be abreast laminated, it is described to cool down that inside flows into the cooling water from the inflow top case
The heating of electric semiconductor；And discharge top case, it is connected to the another of the cooling duct portion with being separated by with the inflow top case
One end, the cooling water flowed into from the inflow top case, in addition to multiple guide portions are discharged, it is incorporated into mutually by insert-molding
The two sides in the cooling duct portion of stacking, are guided for inserting the electric semiconductor between the multiple cooling duct portion
Insertion.
The cooling duct portion includes：Beeline channel portion, it is made up of the passage of multiple writing board shapes, matched somebody with somebody in parallel to each other
It is placed between the multiple electric semiconductor, is incorporated into the inflow top case or the discharge top case；And curved channel portion, its
With curve form, the beeline channel portion being separated by, the straight line are connected with each other in the gabarit of the electric semiconductor
Channel part includes：Upper channel portion, it is configured at the top of the electric semiconductor；Lower passage portion, it is located at the top
The bottom direction of channel part and it is separated by with the upper channel portion, is configured at the bottom of the electric semiconductor；And middle part leads to
Road portion, it is configured between the upper channel portion and the lower passage portion, and top and bottom are configured with the electric power and partly led
Body.
The guide portion includes：Upper guide portion part, it is formed at the two sides in the upper channel portion；Lower guide
Part, it is formed at position corresponding with the upper guide portion part in the two sides in the lower passage portion；Middle part guide member,
It is formed at position corresponding with the upper guide portion part and the lower guide part in the two sides in the central passage portion
Put；And fixed component, its upper guide portion part that be combined with each other, the lower guide part and described middle part guide portion
Part.
The upper guide portion part is by being incorporated into the first upper guide portion part and knot of the end face in the upper channel portion
Formed together in the second upper guide portion part of the other end in the upper channel portion, the lower guide part is by being incorporated into
The the first lower guide part for stating the end face in lower passage portion and the second of the other end that is incorporated into the lower passage portion
Lower guide part is formed, convex respectively below the first upper guide portion part and above the first lower guide part
Going out has a pair of guide humps for guiding electric semiconductor insertion, with described second below the second upper guide portion part
It is protruding with and is contacted with the corner of the electric semiconductor to prevent the electric semiconductor from excessively inserting above lower guide part
The limited block entered.
The standoff distance of a pair of guide humps is equal to the width of the electric semiconductor, highly less than the electric power half
The thickness of conductor.
The standoff distance of the end of the limited block is less than the width in the corner of the electric semiconductor, highly less than described
The thickness of electric semiconductor.
The thickness of the upper guide portion part, the lower guide part and the middle part guide member is equal to the top
The thickness of channel part, the lower passage portion and the central passage portion, insert multiple electric semiconductors of the guide portion with
The mutual face contact of guide portion.
The upper guide portion part of the two sides in the upper channel portion is incorporated into formed with convex in outward direction from two sides
Go out multiple top fixed lobes for fixed component insertion, be incorporated into the middle part guiding of the two sides in the central passage portion
Middle part fixed lobe of the part formed with the fixed component insertion for penetrating the top fixed lobe, is incorporated into the bottom
The lower guide part of the two sides of channel part formed with bottom fixed lobe, the bottom fixed lobe be formed at it is described on
Position corresponding to portion's fixed lobe and middle part fixed lobe is used for what is penetrated from the top fixed lobe and middle part fixed lobe
The fixed component insertion, link the fixed part of the top fixed lobe, middle part fixed lobe and bottom fixed lobe
Part is pressurizeed downwards the upper channel portion, the lower passage portion of pressurizeing upward, and the upper channel portion is inserted to compress
With the electric semiconductor between the lower passage portion.
The outer peripheral face for flowing into top case is protruding with from the outside cooling flow inlet for flowing into cooling water and is incorporated into described
Lower passage portion makes the inflow joint portion that the cooling duct portion is flowed into from the cooling water that the cooling flow inlet flows into, institute
The outer peripheral face for discharging top case is stated formed with being combined with the upper channel portion to discharge the cooling water from the cooling duct portion
Discharge joint portion and cooling water outlet to outside discharge from the cooling water of discharge joint portion discharge.
Technique effect
According to electric semiconductor cooling device of the present utility model, guide portion is incorporated into by insert-molding and is layered on top of each other
Cooling duct portion two sides, make electric semiconductor easily insert upper channel portion, lower passage portion and central passage portion it
Between, in the case of needing to change the electric semiconductor of damage, unload the electric semiconductor of damage and insert new electric power and partly lead
During body, electric semiconductor can be unloaded or inserted easily by sliding type.
Also, with multiple cooling duct portions and its internal inflow is from the cooling water for flowing into top case, cools down mutual face and connects
The heating of tactile electric semiconductor, therefore cooling duct portion flows into cooling water and contacted with electric semiconductor face, can be effectively
Cool down the heating of electric semiconductor.
Brief description of the drawings
Fig. 1 is stereogram of the display according to the electric semiconductor cooling device of the utility model one embodiment；
Fig. 2 is the exploded perspective view of electric semiconductor cooling device shown in exploded view 1；
Fig. 3 a to Fig. 3 c are the stereogram of the guide portion of electric semiconductor cooling device shown in display Fig. 1；
Fig. 4 is the profile cut off along A-A' shown in Fig. 1；
Fig. 5 is the profile cut off along B-B' shown in Fig. 1.
Description of reference numerals
100：Flow into top case 110：Cool down flow inlet
120：Flow into joint portion 200：Discharge top case
210：Cooling water outlet 220：Discharge joint portion
300：Cooling duct portion 310：Beeline channel portion
311：Upper channel portion 312：Lower passage portion
313：Central passage portion 320：Curved channel portion
400：Guide portion 410：Upper guide portion part
411：First upper guide portion part 412：Guide hump
413：Second upper guide portion part 414：Limited block
415：Top fixed lobe 420：Lower guide part
421：First lower guide part 423：Second lower guide part
425：Bottom fixed lobe 430：Middle part guide member
440：Middle part fixed lobe 500：Fixed component
600：Electric semiconductor
Embodiment
The advantages of referring to accompanying drawing and the utility model can be specified with reference to the following examples that accompanying drawing illustrates, feature and its
Implementation method.But the utility model is not limited to embodiments disclosed below, but realized with different variforms,
The present embodiment only makes disclosure of the present utility model more complete, is in order that the ordinary skill of the utility model art
Personnel are understood that category of the present utility model and provided that the utility model is defined by the category of technical scheme.Separately
Outside, the composition that " including (comprises) " and/or " (comprising) that includes " used in specification refers to record will
Element, step, action and/or element are not excluded for also more than one other inscapes, step, action and/or element.
In addition, following explanation is with by three according to the electric semiconductor cooling device of the utility model one embodiment
Electric semiconductor configuration forms the situation of bilevel configuration structure in the mode of a layer of cooling device.
Hereinafter preferred embodiment of the present utility model is illustrated referring to accompanying drawing.
Fig. 1 is stereogram of the display according to the electric semiconductor cooling device of the utility model one embodiment, and Fig. 2 is
The exploded perspective view of electric semiconductor cooling device shown in exploded view 1, Fig. 3 a to Fig. 3 c partly lead for electric power shown in display Fig. 1
The stereogram of the guide portion of body cooling device, Fig. 4 are the profile cut off along A-A' shown in Fig. 1, and Fig. 5 is along B- shown in Fig. 1
The profile of B' cut-outs.
Referring to Fig. 1 to Fig. 5, the electric semiconductor cooling device of the present embodiment is used to insert to be separated by the more of state stacking
Individual electric semiconductor 600 is to cool down the heating of the electric semiconductor 600, including flows into top case 100, discharge top case 200, cooling
Channel part 300 and guide portion 400.
Top case 100 is flowed into from the outside cooling water for flowing into cooling electric semiconductor 600 and generating heat, is preferably connected to cooling
One end of channel part 300 and extend as shown in Figures 1 and 2 to X-direction on X/Y plane.
This inflow top case 100 is formed with cooling flow inlet 110 with flowing into joint portion 120.
Cooling flow inlet 110 is to flow into inside and out top case 100 to be interconnected from the outer peripheral face for flowing into top case 100
Hollow shape pipe, cooling water is flowed into from outside be easily flowed into inside top case 100.
One end that joint portion 120 is incorporated into cooling duct portion 300 is flowed into, from the periphery of inflow top case 100 towards electric power partly
The direction protrusion that conductor 600 configures, the cooling water flowed into from cooling flow inlet 110 is flowed into cooling duct portion 300.
The formation number for flowing into joint portion 120 is equal to the formation number in cooling duct portion 300, makes the interior of inflow top case 100
The inside in portion and cooling duct portion 300 is interconnected.
Discharge top case 200 to be used to discharge the cooling water from the inflow of top case 100 is flowed into, be connected with being separated by with flowing into top case 100
The other end in cooling duct portion 300, extend as shown in Figures 1 and 2 to X-direction on X/Y plane.
This discharge top case 200 is formed with discharge joint portion 220 and cooling water outlet 210.
Discharge joint portion 220 is incorporated into the other end in cooling duct portion 300, from the periphery of discharge top case 200 towards electric power
The direction protrusion that semiconductor 600 configures, makes cooling water be flowed into discharge top case 200 from cooling duct portion 300.
The formation number for discharging joint portion 220 is equal to the formation number in cooling duct portion 300, makes the interior of discharge top case 200
The inside in portion and cooling duct portion 300 is interconnected.
Cooling water outlet 210 is to discharge to be interconnected from the outer peripheral face of discharge top case 200 inside and out top case 200
Hollow shape pipe, the cooling water for making to discharge from cooling duct portion 300 by discharging joint portion 220 is easily drained to discharge
The outside of top case 200.
Cooling duct portion 300 has multiple, and the cooling water of top case 100 is flowed into inside it, cools down the electricity of mutual face contact
The heating of power semiconductor 600.
Therefore, cooling duct portion 300 flows into cooling water and contacted with the face of electric semiconductor 600, so as to effectively cool down
The heating of electric semiconductor 600.
Cooling duct portion 300 is incorporated into the discharge for flowing into joint portion 120 and discharging top case 200 combination for flowing into top case 100
Portion 220, it is connected with each other and flows into top case 100 and discharge top case 200.
For this reason, it is preferred that the formation number in cooling duct portion 300 corresponds to multiple inflow joint portions 120 and discharge knot
The formation number in conjunction portion 220.
Effectively to absorb the heating of electric semiconductor 600, cooling duct portion 300 preferably passes through the thermal conductivity such as aluminium alloy, copper
Good material is formed.
Furthermore it is possible to arbitrarily determine the formation number in cooling duct portion 300 according to a variety of environment, the present embodiment is with a pair
Illustrated exemplified by cooling duct portion 300.
This cooling duct portion 300 includes beeline channel portion 310 and curved channel portion 320.
In addition, as shown in Figures 1 and 2, cooling duct portion 300 is a pair, one end, which is connected to, flows into top case 100, the other end
It is connected to discharge top case 200.
That is, a pair of cooling ducts of the present utility model portion 300 as shown in Figures 1 and 2, is respectively for insertion into six electric power half
Conductor 600 amounts to 12.
Beeline channel portion 310 is made up of the passage of multiple writing board shapes, as shown in Figures 1 and 2, with to the Z in ZX planes
The state stacking that direction of principal axis is separated by.
This beeline channel portion 310 by being configured at the upper channel portion 311 on the top of electric semiconductor 600, in upper channel
Bottom direction and its in portion 311 be separated by with facing each other the lower passage portion 312 that is configured at the bottom of electric semiconductor 600 and
It is configured at facing each other between upper channel portion 311 and the lower passage portion 312 and top and bottom is configured with electric power
The central passage portion 313 of semiconductor 600 is formed.
Therefore, electric semiconductor 600 can insert in sliding manner to the X-direction on X/Y plane respectively as illustrated in fig. 2
Between upper channel portion 311 and lower passage portion 312 and central passage portion 313.
In addition, one end of the middle and upper part channel part 311 of multiple beeline channel portions 310 as shown in Figures 1 and 2 combines with discharge
Portion 220 is combined, and the other end in lower passage portion 312 is combined with flowing into joint portion 120.
Therefore, the sectional area in beeline channel portion 310 is substantially equal to flow into joint portion 120 and the discharge joint portion 220
Sectional area.
Therefore, cooling duct portion 300, which is easily incorporated into, flows into joint portion 120 and discharge joint portion 220, from inflow joint portion
120 cooling waters flowed into can easily penetrate the cooling duct portion 300 and be discharged to discharge joint portion 220.
In addition, accompanying drawing shows that flowing into joint portion 120 is incorporated into lower passage portion 312, discharge joint portion 220 is incorporated into
Portion's channel part 311, but as long as being able to ensure that cooling water easily flows into the inside in cooling duct portion 300, the cooling water of inflow is easy
The outside in cooling duct portion 300 is discharged to, then even being combined according to the mode opposite with accompanying drawing.
Curved channel portion 320 be curve form and positioned at electric semiconductor 600 gabarit, be connected with each other be separated by it is straight
Line passage portion 310.
Curved channel portion 320 is two, has the top for being connected with each other the cooling duct portion 300 being laminated with facing each other
The shape of channel part 311, central passage portion 313 and lower passage portion 312.
More specifically, for one in two curved channel portions 320, the one end in curved channel portion 320 is incorporated into
The opposite direction i.e. other end in the direction combined in portion's channel part 311 with discharge joint portion 220, the other end in curved channel portion 320
It is incorporated into the other end in central passage portion 313.
Also, the one end in remaining curved channel portion 320 is incorporated into the one end in central passage portion 313, remaining song
The other end in line passage portion 320 is incorporated into the one end in lower passage portion 312.
Therefore, cooling water is equably received into the cooling duct portion 300, it is possible to increase the electric semiconductor 600
Cooling effectiveness.
Guide portion 400 is incorporated into the two sides in the cooling duct portion 300 being layered on top of each other by insert-molding, electric power is partly led
Body 600 easily inserts between the upper channel portion 311 and lower passage portion 312 and central passage portion 313 being separated by sliding manner.
Therefore, when electric semiconductor 600 damages need change damage electric semiconductor 600 in the case of, unload damage
Bad electric semiconductor 600 and when inserting new electric semiconductor 600, easily can unload or insert in sliding manner electric power
Semiconductor 600.
This guide portion 400 includes upper guide portion part 410, lower guide part 420, middle part guide member 430 and consolidated
Determine part 500.
Upper guide portion part 410 is formed at X-direction in XY planes in upper channel portion 311 as shown in Fig. 2 and Fig. 3 a
Two sides, be made up of the first upper guide portion part 411, the second upper guide portion part 413 and top fixed lobe 415.
First upper guide portion part 411 is incorporated into a pair of upper channel portions 311 is inserted into the outer of electric semiconductor 600
Side direction is end face.
Second upper guide portion part 413 is incorporated into interior side direction i.e. other end in a pair of upper channel portions 311.
Top fixed lobe 415 is in the first upper guide portion part 411 and side such as Fig. 2 of the second upper guide portion part 413
And protruded respectively to the opposite directions of X-direction on X/Y plane shown in Fig. 3 a, for penetrating fixed component 500 with phase
Mutually fixed upper channel portion 311, central passage portion 313 and lower passage portion 312.
Preferably there are multiple top fixed lobes 415.
Therefore, it is possible to be securely joined with upper channel portion 311, central passage portion 313 and lower passage portion 312.
It is preferred here that the standoff distance of multiple top fixed lobes 415 is more than the width of electric semiconductor 600.
Therefore, it is possible to prevent the fixed component 500 for penetrating top fixed lobe 415 from hindering in the insertion of electric semiconductor 600
Between portion's channel part 311 and central passage portion 313 and between central passage portion 313 and lower passage portion 312.
Lower guide part 420 is formed at corresponding with upper guide portion part 410 in the two sides in lower passage portion 312
Position, it is made up of the first lower guide part 421, the second lower guide part 423 and bottom fixed lobe 425.
First lower guide part 421 is incorporated into corresponding with the first upper guide portion part 411 in a pair of lower passage portions 312
Position.
Second lower guide part 423 is incorporated into corresponding with the second upper guide portion part 413 in a pair of lower passage portions 312
Position.
Bottom fixed lobe 425 is in the first lower guide part 421 and side such as Fig. 2 of the second lower guide part 423
And protruded respectively to the opposite directions of X-direction on X/Y plane shown in Fig. 3 a, it is formed at and top fixed lobe 415
Corresponding position enables fixed component 500 to fix upper channel portion 311, central passage portion 313 and lower passage portion 312.
Herein, bottom fixed lobe 425 is in the both sides of the first lower guide part 421 and the second lower guide part 423
Face is incorporated into partly leads with 415 corresponding position of top fixed lobe, the standoff distance of multiple bottom fixed lobes 425 more than electric power
The width of body 600.
In addition, below the first upper guide portion part 411 and it is protruding with a pair above the first lower guide part 423 and draws
Pilot plays 412.
Guide hump 412 is guided for inserting between upper channel portion 311 and central passage portion 313 and central passage portion
The insertion of electric semiconductor 600 between 313 and lower passage portion 312.
Due to inserting electric semiconductor 600 between a pair of guide humps 412, therefore by the width with electric semiconductor 600
Identical distance is separated by.
Therefore, between the insertion upper channel of electric semiconductor 600 portion 311 and central passage portion 313 and central passage portion 313
When between lower passage portion 312, electric semiconductor 600 can be easily slidably inserted into along guide hump 412, can be prevented
Vibrated because of external impact.
Also, the height of guide hump 412 is less than the thickness of electric semiconductor 600.
Therefore, between upper channel portion 311 and central passage portion 313 and central passage portion 313 and lower passage portion are inserted
Electric semiconductor 600 between 312 can clearly contact below upper channel portion 311 with above central passage portion 313 and
Below central passage portion 313 with above lower passage portion 312.
In addition, with being protruding with a pair of limits above the second lower guide part 423 below the second upper guide portion part 413
Position block 414.
The contact of limited block 414 is inserted top with the first lower guide part 421 by the first upper guide portion part 411 and led to
Electric semiconductor 600 between road portion 311 and central passage portion 313 and between central passage portion 313 and lower passage portion 312
Corner, prevent that electric semiconductor 600 is excessively inserting between upper channel portion 311 and central passage portion 313 and central passage portion 313
Between lower passage portion 312.
The standoff distance of the end of limited block 414 is less than the distance in the corner of electric semiconductor 600.
Therefore, between upper channel portion 311 and central passage portion 313 and central passage portion 313 and lower passage portion are inserted
The corner contact limited block 414 of electric semiconductor 600 between 312, can easily prevent electric semiconductor 600 to be excessively inserting
Between portion's channel part 311 and central passage portion 313 and between central passage portion 313 and lower passage portion 312.
Also, the height of limited block 414 is equal to the height of guide hump 412.
Therefore, between upper channel portion 311 and central passage portion 313 and central passage portion 313 and lower passage portion are inserted
Electric semiconductor 600 between 312 can clearly contact below upper channel portion 311 with above central passage portion 313 and
Below central passage portion 313 with above lower passage portion 312.
Middle part guide member 430 is formed at and upper guide portion part 410 and bottom in the two sides in central passage portion 313
Position corresponding to guide member 420, there is middle part fixed lobe 440.
Middle part fixed lobe 440 is in the side of middle part guide member 430 as shown in Figure 3 c to X-direction in XY planes
Opposite directions protrusion, be formed at 425 corresponding position of top fixed lobe 415 and bottom fixed lobe, make solid
Determining part 500 can interfix upper channel portion 311, central passage portion 313 and lower passage portion 312.
Herein, middle part fixed lobe 440 is incorporated into and top fixed lobe 415 and bottom in middle part guide member 430
Position corresponding to fixed lobe 425, the standoff distance of multiple middle part fixed lobes 440 are more than the width of electric semiconductor 600.
As described above, according to electric semiconductor cooling device of the present utility model, guide portion 400 passes through insert-molding knot
Together in the two sides in the cooling duct portion 300 being layered on top of each other, make that electric semiconductor easily inserts upper channel portion 311, bottom leads to
Between road portion 312 and central passage portion 313, in the case of needing to change the electric semiconductor 600 of damage, the electricity of damage is unloaded
Power semiconductor 600 and when inserting new electric semiconductor 600, it can easily pass to sliding type and unload or insert electric power and partly lead
Body.
Also, with multiple cooling duct portions 300 and its internal inflow is from the cooling water for flowing into top case 100, cools down phase
The heating of the electric semiconductor 600 of mutual face contact, thus cooling duct portion 300 flow into cooling water and with the face of electric semiconductor 600
Contact, can effectively cool down the heating of electric semiconductor 600.
The utility model is not limited to above-described embodiment, and a variety of changes can be carried out in the range of the utility model technological thought
Shape is implemented.
Claims (10)
1. a kind of electric semiconductor cooling device, cold for inserting the multiple electric semiconductors insertion being laminated with the state being separated by
The heating of the electric semiconductor, it is characterised in that including：
Top case is flowed into, wherein flowing into the cooling water from outside；
Multiple cooling duct portions, its one end are connected to the inflow top case, between the multiple electric semiconductor with the electricity
Power semiconductor surface is contacted and is abreast laminated, and inside flows into the cooling water from the inflow top case and partly led with cooling down the electric power
The heating of body；And
Top case is discharged, it is connected to the other end in the cooling duct portion with the inflow top case with being separated by, and discharges from the stream
Enter the cooling water of top case inflow.
2. electric semiconductor cooling device according to claim 1, it is characterised in that also include：
Multiple guide portions, it is incorporated into the two sides in the cooling duct portion being layered on top of each other by insert-molding, guides and be used for
The insertion of the electric semiconductor inserted between the multiple cooling duct portion.
3. electric semiconductor cooling device according to claim 2, it is characterised in that the cooling duct portion includes：
Beeline channel portion, it is made up of the passage of multiple writing board shapes, is configured at the multiple electric semiconductor in parallel to each other
Between, it is incorporated into the inflow top case or the discharge top case；And
Curved channel portion, it has curve form, is separated by the gabarit interconnection of the electric semiconductor described straight
Line passage portion,
The beeline channel portion includes：
Upper channel portion, it is configured at the top of the electric semiconductor；
Lower passage portion, it is located at the bottom direction in the upper channel portion and is separated by with the upper channel portion, is configured at institute
State the bottom of electric semiconductor；And
Central passage portion, it is configured between the upper channel portion and the lower passage portion, and top and bottom configuration are
State electric semiconductor.
4. electric semiconductor cooling device according to claim 3, it is characterised in that the guide portion includes：
Upper guide portion part, it is formed at the two sides in the upper channel portion；
Lower guide part, it is formed at position corresponding with the upper guide portion part in the two sides in the lower passage portion
Put；
Middle part guide member, it is formed at and the upper guide portion part and the bottom in the two sides in the central passage portion
Position corresponding to guide member；And
Fixed component, its upper guide portion part that be combined with each other, the lower guide part and described middle part guide member.
5. electric semiconductor cooling device according to claim 4, it is characterised in that：
The upper guide portion part is by being incorporated into the first upper guide portion part of the end face in the upper channel portion and being incorporated into
Second upper guide portion part of the other end in the upper channel portion is formed, the lower guide part by be incorporated into it is described under
First lower guide part of the end face of portion's channel part and be incorporated into the lower passage portion other end the second bottom
Guide member is formed,
It is protruding with respectively described in guiding below the first upper guide portion part and above the first lower guide part
A pair of guide humps of electric semiconductor insertion,
With being protruding with above the second lower guide part and the electric power half below the second upper guide portion part
The corner of conductor is contacted to prevent limited block that the electric semiconductor is excessively inserting.
6. electric semiconductor cooling device according to claim 5, it is characterised in that：
The standoff distance of a pair of guide humps is equal to the width of the electric semiconductor, highly less than the electric semiconductor
Thickness.
7. electric semiconductor cooling device according to claim 5, it is characterised in that：
The standoff distance of the end of the limited block is less than the width in the corner of the electric semiconductor, highly less than the electric power
The thickness of semiconductor.
8. electric semiconductor cooling device according to claim 5, it is characterised in that：
The thickness of the upper guide portion part, the lower guide part and the middle part guide member is equal to the upper channel
The thickness in portion, the lower passage portion and the central passage portion, insert multiple electric semiconductors of the guide portion with it is described
The mutual face contact of guide portion.
9. electric semiconductor cooling device according to claim 5, it is characterised in that：
The upper guide portion parts of the two sides in the upper channel portion is incorporated into formed with protruding confession in outward direction from two sides
Multiple top fixed lobes of the fixed component insertion, it is incorporated into the middle part guide member of the two sides in the central passage portion
Middle part fixed lobe formed with the fixed component insertion for penetrating the top fixed lobe, is incorporated into the lower passage
Formed with bottom fixed lobe, the bottom fixed lobe is formed to be consolidated the lower guide part of the two sides in portion with the top
Position corresponding to fixed raised and middle part fixed lobe is used for from described in the top fixed lobe and the insertion of middle part fixed lobe
Fixed component penetrates,
The fixed component for linking the top fixed lobe, middle part fixed lobe and bottom fixed lobe is pressurizeed downwards institute
Upper channel portion is stated, the lower passage portion of pressurizeing upward, the upper channel portion and the lower passage are inserted to compress
Electric semiconductor between portion.
10. electric semiconductor cooling device according to claim 3, it is characterised in that：
The outer peripheral face for flowing into top case is protruding with from the outside cooling flow inlet for flowing into cooling water and is incorporated into the bottom
Channel part makes the inflow joint portion that the cooling duct portion is flowed into from the cooling water that the cooling flow inlet flows into,
It is described discharge top case outer peripheral face formed with combined with the upper channel portion with discharge from the cooling duct portion
The discharge joint portion of cooling water and the cooling water outlet to outside discharge from the cooling water of discharge joint portion discharge.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150159532A KR102471223B1 (en) | 2015-11-13 | 2015-11-13 | Cooling device for power semiconductor |
| KR10-2015-0159532 | 2015-11-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206628462U true CN206628462U (en) | 2017-11-10 |
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| CN111165082A (en) * | 2017-12-28 | 2020-05-15 | 株式会社高山 | Heat exchanger for cooling power semiconductor of environment-friendly vehicle |
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| KR20230171136A (en) | 2022-06-13 | 2023-12-20 | 추용호 | Cooling device for power semiconductor module and method of manufacturing the same |
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| JPS62142021A (en) * | 1985-12-13 | 1987-06-25 | Nippon Light Metal Co Ltd | Manufacture of radiating panel for thermoelectric cooling body |
| KR101673520B1 (en) * | 2010-03-04 | 2016-11-08 | 삼성전자 주식회사 | Semiconductor module, socket for semiconductor module and connection structure thereof |
| JP5327150B2 (en) * | 2010-06-28 | 2013-10-30 | 株式会社デンソー | Laminate of semiconductor module and manufacturing method thereof |
| JP5609762B2 (en) * | 2011-05-11 | 2014-10-22 | 株式会社デンソー | Power converter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111165082A (en) * | 2017-12-28 | 2020-05-15 | 株式会社高山 | Heat exchanger for cooling power semiconductor of environment-friendly vehicle |
| CN111165082B (en) * | 2017-12-28 | 2021-08-17 | 株式会社高山 | Heat exchanger for cooling power semiconductor of environment-friendly vehicle |
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| KR20170056196A (en) | 2017-05-23 |
| KR102471223B1 (en) | 2022-11-25 |
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