CN206607312U - A kind of chemical gas-phase deposition system - Google Patents
A kind of chemical gas-phase deposition system Download PDFInfo
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- CN206607312U CN206607312U CN201720306140.0U CN201720306140U CN206607312U CN 206607312 U CN206607312 U CN 206607312U CN 201720306140 U CN201720306140 U CN 201720306140U CN 206607312 U CN206607312 U CN 206607312U
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Abstract
The utility model provides a kind of chemical gas-phase deposition system, including：Chemical deposition room；Chemical deposition room includes reaction cavity；It is arranged at the high-temperature heating equipment outside chemical deposition room；The gas supply system being connected with chemical deposition room；Gas supply system includes gas source air inlet pipe and solid source gas inlet pipe, and solid source gas inlet pipe is located in the pipe of gas source air inlet pipe；The outlet of solid source gas inlet pipe is connected with the reaction cavity of the chemical deposition room；The outlet of gas source air inlet pipe is connected with the reaction cavity of the chemical deposition room；The vacuum system being connected with the reaction cavity of chemical deposition room.Compared with prior art, the utility model separates solid source gas inlet pipe with solid source gas inlet pipe, solid source gas is not bullied completely the influence of source gas, grows two introduces a collection no cross contaminations；By the way that solid source is moved on in solid heater, it is not influenceed by hyperthermia radiation, realize the control to solid source evaporation rate.
Description
Technical field
The utility model belongs to chemical device technical field, more particularly to a kind of chemical gas-phase deposition system.
Background technology
Two-dimensional material is a new direction of current semiconductor applications development, and current two-dimensional material is shown in many fields
Not comparable advantage, such as wearable device, novel battery etc..And want large area and prepare two-dimensional material, at present most
Universal method is exactly chemical vapor deposition (CVD), but the property of homogenous material can not meet required for require that,
Therefore start to explore distinctive property in hetero-junctions, such as in the hetero-junctions of graphene and boron nitride, the growth of boron nitride is current
The most frequently used use is exactly ammonia borine as Solid Source.But the CVD equipment of current commercial type, it is directed to the most universal
Situation, most of is all to be passed through gaseous source, is then deposited in the substrate of high-temperature region.If encountering Solid Source, it is necessary to pass through
Twine heating tape or Solid Source is heated by dual temperature area even multi-temperature zone, so that presoma is obtained, but if meeting
Lower boiling Solid Source (such as ammonia borine), when high-temperature region is heated to certain temperature, the heat radiation come out is enough
Cause the uncontrolled volatilization in source, so as to cause the growth for being not desired to occur.
Utility model content
In view of this, the technical problems to be solved in the utility model is to provide a kind of chemical gas-phase deposition system, and this is
The control volatilized to low boiling Solid Source can be achieved in system.
The utility model provides a kind of chemical gas-phase deposition system, including：
Chemical deposition room；The chemical deposition room includes reaction cavity；
It is arranged at the high-temperature heating equipment outside chemical deposition room；
The gas supply system being connected with chemical deposition room；The gas supply system includes gas source air inlet pipe and solid
Source gas air inlet pipe, the solid source gas inlet pipe is located in the pipe of gas source air inlet pipe；The solid source gas inlet
The outlet of pipe is connected with the reaction cavity of the chemical deposition room；The outlet of the gas source air inlet pipe and the chemical deposition
The reaction cavity of room is connected；
The vacuum system being connected with the reaction cavity of chemical deposition room.
It is preferred that, the chemical gas-phase deposition system also includes inlet flange；The inlet flange include the first air inlet,
Second air inlet and gas outlet；First air inlet of the inlet flange is connected with gas outlet；The gas outlet passes through cutting ferrule
Interface is connected with the gas source air inlet pipe；Second air inlet is connected with the solid source gas inlet pipe, and institute
The second air inlet is stated not connect with the first air inlet and gas outlet.
It is preferred that, a diameter of 40~60mm of the gas source air inlet pipe.
It is preferred that, a diameter of 20~30mm of the solid source gas inlet pipe；Length is 400~600mm.
It is preferred that, the chemical gas-phase deposition system also includes solid source heater；The solid source heater with
The import of the solid source gas inlet pipe is connected.
It is preferred that, the solid source heater is additionally provided with carrier gas inlet.
It is preferred that, the solid source heater is additionally provided with temperature sensor.
It is preferred that, it is wound with heating tape outside the solid source gas inlet pipe.
It is preferred that, the high-temperature heating equipment is using Si-Mo rod as heating element heater, and magnesia is used as insulation material, N-type heat
Galvanic couple is used as temperature element.
It is preferred that, the reaction cavity is quartz ampoule.
The utility model provides a kind of chemical gas-phase deposition system, including：Chemical deposition room；The chemical deposition room bag
Include reaction cavity；Set and the high-temperature heating equipment outside chemical deposition room；The gas supply system being connected with chemical deposition room；
The gas supply system includes gas source air inlet pipe and solid source gas inlet pipe, and the solid source gas inlet pipe is located at gas
In the pipe of body source air inlet pipe；The outlet of the solid source gas inlet pipe is connected with the reaction cavity of the chemical deposition room；
The outlet of the gas source air inlet pipe is connected with the reaction cavity of the chemical deposition room；With the reaction cavity of chemical deposition room
The vacuum system being connected.Compared with prior art, the utility model is by solid source gas inlet pipe and solid source gas inlet
Pipe is separated, and solid source gas is not bullied completely the influence of source gas, so as to realize that two introduces a collection no cross contaminations grow；Pass through
Solid source is moved on in solid heater, solid source is not influenceed by hyperthermia radiation, speed is evaporated to solid source so as to realize
The control of rate.
Brief description of the drawings
The structural representation for the chemical gas-phase deposition system that Fig. 1 provides for the utility model；
The structural representation for the inlet flange that Fig. 2 provides for the utility model；
The structural representation for the inlet flange that Fig. 3 provides for the utility model；
The top view for the inlet flange that Fig. 4 provides for the utility model；
The side view for the inlet flange that Fig. 5 provides for the utility model；
The front view for the inlet flange that Fig. 6 provides for the utility model；
Fig. 7 is the stereoscan photograph of the hexagonal boron nitride obtained in the utility model embodiment 1.
Embodiment
Below in conjunction with the utility model embodiment, the technical scheme in the utility model embodiment is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the utility model, rather than whole embodiments.
Based on the embodiment in the utility model, what those of ordinary skill in the art were obtained under the premise of creative work is not made
Every other embodiment, belongs to the scope of the utility model protection.
The utility model provides a kind of chemical gas-phase deposition system, including：Chemical deposition room；The chemical deposition room bag
Include reaction cavity；It is arranged at the high-temperature heating equipment outside chemical deposition room；The gas supply system being connected with chemical deposition room；
The gas supply system includes gas source air inlet pipe and solid source gas inlet pipe, and the solid source gas inlet pipe is located at gas
In the pipe of body source air inlet pipe；The outlet of the solid source gas inlet pipe is connected with the reaction cavity of the chemical deposition room；
The outlet of the gas source air inlet pipe is connected with the reaction cavity of the chemical deposition room；What is be connected with chemical deposition room is true
Empty set is united.
Referring to Fig. 1, the structural representation for the chemical gas-phase deposition system that Fig. 1 provides for the utility model, wherein A are carrier gas
Import, B are that solid source heater, C are that temperature sensor, D are that solid source gas inlet, E are that gas source air inlet, F are
Vacuum meter, G are that solid source gas inlet pipe, H are that gas source air inlet pipe, J are high-temperature heating equipment, K to meet vacuum system mouthful, L
For flapper valve.
Wherein, the chemical deposition room is chemical deposition room well known to those skilled in the art, has no special limit
System, chemical deposition room described in the utility model includes reaction cavity；The reaction cavity is preferably quartz ampoule；The reaction chamber
The diameter of body is preferably 20~100mm, more preferably 40~80mm, is further preferably 50~60mm, most preferably 50mm；It is described anti-
The length for answering cavity is preferably 1000~2000mm, more preferably 1200~1800mm, is further preferably 1400~1600mm, optimal
Elect 1400mm as.
High-temperature heating equipment is provided with outside the chemical deposition room；The high-temperature heating equipment is preferably using Si-Mo rod as adding
Thermal element, magnesia is used as temperature element as insulation material, N-type thermocouple；The high-temperature heating equipment is preferably additionally provided with
Temperature control equipment；The temperature control equipment is preferably the electric instrument of space.
As the further improved technical scheme of the utility model, the high-temperature heating equipment outside chemical deposition room uses N-type
Thermocouple carries out thermometric, Si-Mo rod as heating element heater, magnesia as insulation material, space electricity instrument as temperature controller,
Chemical deposition room is used as reaction cavity using the quartz ampoule of 50mm diameter 1400mm length.
According to the utility model, the chemical gas-phase deposition system includes the gas supply system being connected with chemical deposition room
System；The gas supply system includes gas source air inlet pipe and solid source gas inlet pipe；The solid source flue is located at gas
In the pipe of body source air inlet pipe；The outlet of the solid source gas inlet pipe is connected with the reaction cavity of the chemical deposition room；
The outlet of the gas source air inlet pipe is connected with the reaction cavity of the chemical deposition room.Solid source air inlet pipe is located at gas source
In air inlet pipe, reduction cross pollution that can be largely so that the heterojunction material of growth can keep more preferable quality.
In the utility model, the solid source gas inlet pipe is preferably quartz ampoule；Preferably twined outside the solid source gas inlet pipe
Heating tape is wound with, to ensure that solid source gas will not be cooled down in course of conveying；The temperature of the heating tape is preferably 100 DEG C~
200 DEG C, more preferably 120 DEG C~180 DEG C, be further preferably 140 DEG C~160 DEG C, most preferably 150 DEG C；The gas source air inlet
The diameter of pipe is preferably 40~60mm, more preferably 50mm；The diameter of the solid source gas inlet pipe is preferably 20~30mm,
More preferably 25mm；The length of the solid source gas inlet pipe is preferably 400~600mm, more preferably 500mm.
According to the utility model, the chemical gas-phase deposition system preferably also includes inlet flange；The inlet flange bag
Include the first air inlet, the second air inlet and gas outlet；First air inlet of the inlet flange is connected with gas outlet；It is described go out
Gas port is connected by cutting ferrule interface with the gas source air inlet pipe；Second air inlet and the solid source gas inlet pipe
It is connected, and second air inlet is not connected with the first air inlet and gas outlet.Inlet flange is designed as two groups of flanges
Combination so that the gas evaporated by low temperature solid-state source can enter from the outside of high temperature reaction zone, will not be by high temperature
The influence in area.
According to the utility model, the first air inlet of the inlet flange is preferably connected with threeway, more preferably passes through mark
Quasi- interface is connected with threeway；One of the threeway is preferably connected with vacuum meter；The other end of the threeway is preferably connected with
Gas tank.
As the further improved technical scheme of the utility model, carried referring to Fig. 2~6, Fig. 2 with Fig. 3 for the utility model
The structural representation of the inlet flange of confession, the top view for the inlet flange that Fig. 4 provides for the utility model, Fig. 5 is that this practicality is new
The side view for the inlet flange that type is provided, the front view for the inlet flange that Fig. 6 provides for the utility model.The inlet flange is more
It is preferred that being specially：Described inlet flange device one end is outlet for 50mm standard flange, and one section of centre connects KF16 standard
Interface, for connecting a threeway head, threeway head connects vacuum meter, gas tank in two ends respectively in addition, wherein come out from gas tank
Gas is connected by Φ 6 ferrule fitting, and this cutting ferrule interface is the first air inlet, and vacuum meter passes through clamp connection.Second air inlet
Mouth is 25mm standard flanges, and leaves the deep steps of 25mm at 25mm standard flanges end, and the step is used to place FFKM cushion rubbers, logical
Cross and tighten screw extruding cushion rubber to seal the small quartz ampoule of 25mm bores, the small quartz ampoule is solid source gas inlet pipe, length
For 500mm, high temperature reaction zone is passed directly to.
According to the utility model, the chemical deposition system preferably also includes solid source heater；The solid source adds
Thermal is connected with the import of the solid source gas inlet pipe, is more preferably entered by inlet flange with the solid source gas
The import of tracheae is connected.The solid source heater is used for the heating sublimation of solid source, moves it to outside chemical deposition room,
Evaporating temperature is accurately controlled, experimental variable can be controlled preferably, help to realize the control for volatilizing to solid source, especially
It is lower boiling solid source, low boiling solid source is controllably heated evaporation, it is not life in the works that will not cause
It is long.The solid source heater is preferably provided with carrier gas inlet；The carrier import is preferably provided with gas mass flow gauge,
To realize the control to carrier gas flux, carrier gas carrys the source for distilling out by solid source and entered in solid source gas inlet pipe；
The solid source heater is preferably additionally provided with temperature sensor；The temperature sensor is well known to those skilled in the art
Temperature sensor, it is preferably PT100 temperature sensors to have no in special limitation, the utility model.The TEMP
Device is preferably connected with temperature controller.Temperature controller provides regulation letter by comparing setting value and measured value by pid algorithm
Number control the break-make of heater；The heater of the solid source heater is preferably the heater of annular, more preferably ring
The ceramic heat circle of shape, heating is fast and relatively safer.
As the further improved technical scheme of the utility model, the solid source heating sublimation is moved over to outside reaction tube,
It is placed in outside solid source heater, preferably stainless steel cauldron；Reactor is by FFKM rubber sealings, by tightening
Screw compresses cushion rubber, seal cavity after cushion rubber deformation.Reactor leaves a carrier gas inlet, a gas outlet, a PT100
Slot.Carrier gas inlet connection is as the carrier gas for delivering source gas.Throughput size is controlled by a gas mass flow gauge.
And the inlet end of reactor is connected to by a Φ 6 cutting ferrule snap joint.A Φ 4 PT100 is left in middle
Slot, for the temperature in detection reaction kettle.PT100 uses two-wire system, and precision can reach ± 0.1 DEG C.PT100 connections
To outside temperature controller, controller provides Regulate signal to control by comparing setting value and measured value by pid algorithm
The break-make of heater.Heater is the ceramic heat circle of annular, and heating is fast and relatively safer.It it is one on the left of reactor
Gas outlet, carrier gas carrys one end i.e. figure that the source for distilling out by low boiling Solid Source is imported into inlet flange from this outlet
2 " the Solid Source air inlets " marked, are connected again by Φ 6 cutting ferrule snap joint.
As the further improved technical scheme of the utility model, when transmitting the gas that Solid Source distils out, adopt
Transmitted with the quartz ampoule that special transmission channel is 25mm diameter 500mm length.In order to be condensed when preventing midway from transmitting, outside
Portion is wound with heating tape, and heating tape is heated to 150 DEG C, it is ensured that will not be condensed in transmitting procedure；And all inlet flanges are close
Sealing rubber ring is all using FFKM cushion rubbers, it is ensured that carbon pollution will not occur because of the quality problems of cushion rubber.
According to the utility model, the chemical gas-phase deposition system also includes the vacuum system being connected with chemical deposition room
System.
As the further improved technical scheme of the utility model, the vacuum of vacuum system is mainly produced by mechanical pump
It is raw, mechanical pump model Edward RV8.Potted component includes：Fluorine rubber ring, bellows, vacuum valve, and vacuum flange.
The utility model separates solid source gas inlet pipe with solid source gas inlet pipe, makes solid source gas completely not
It is bullied the influence of source gas, so as to realize the control to solid source gas.
In order to further illustrate the utility model, a kind of chemical gaseous phase provided with reference to embodiments the utility model
Depositing system is described in detail.
Reagent used is commercially available in following examples.
Embodiment 1
Chemical gas-phase deposition system includes：Chemical deposition room；The chemical deposition room includes reaction cavity；It is arranged at chemistry
Deposit outdoor high-temperature heating equipment；The gas supply system being connected with chemical deposition room；The gas supply system includes
Gas source air inlet pipe and solid source gas inlet pipe, the solid source gas inlet pipe are located in the pipe of gas source air inlet pipe；Institute
The outlet for stating solid source gas inlet pipe is connected with the chemical deposition room；The outlet of the gas source air inlet pipe and describedization
Settling chamber is learned to be connected；The vacuum system being connected with chemical deposition room.
The high-temperature heating equipment of chemical deposition room carries out thermometric using N-type thermocouple, and Si-Mo rod is used as heating element heater, oxidation
Magnesium is as insulation material, and space electricity instrument uses the quartz ampoule of 50mm diameter 1400mm length as temperature controller, chemical deposition room
It is used as reaction cavity.
The inlet flange includes the first air inlet, the second air inlet and gas outlet；First air inlet of the inlet flange
Mouth is connected by outlet with the gas source air inlet pipe；Second air inlet is connected with the solid source gas inlet pipe
Lead to, and second air inlet is not connected with the first air inlet and gas outlet.
Described inlet flange device one end is outlet for 50mm standard flange, and middle one section of standard for meeting KF16 connects
Mouthful, for connecting a threeway head, threeway head connects vacuum meter, gas tank, wherein the gas come out from gas tank in two ends respectively in addition
Body is connected by Φ 6 ferrule fitting, and this cutting ferrule interface is the first air inlet, and vacuum meter passes through clamp connection.Second air inlet
For 25mm standard flanges, and the deep steps of 25mm are left at 25mm standard flanges end, the step is used to place FFKM cushion rubbers, passed through
Tighten screw extruding cushion rubber to seal the small quartz ampoule of 25mm bores, the small quartz ampoule is solid source gas inlet pipe, length is
500mm, is passed directly to high temperature reaction zone.
The solid source heating sublimation is moved over to outside reaction tube, in the solid source heater for being placed on outside, is preferably
Stainless steel cauldron；Reactor compresses cushion rubber, seal cavity after cushion rubber deformation by tightening screw by FFKM rubber sealings.
Reactor leaves a carrier gas inlet, a gas outlet, a PT100 slot.Carrier gas inlet connection is as delivery source gas
The carrier gas of body.Throughput size is controlled by a gas mass flow gauge.And connected by a Φ 6 cutting ferrule snap joint
To the inlet end of reactor.A Φ 4 PT100 slots are left in middle, for the temperature in detection reaction kettle.PT100
Two-wire system is used, precision can reach ± 0.1 DEG C.PT100 is connected to the temperature controller of outside, and controller is by comparing
Setting value and measured value, provide Regulate signal to control the break-make of heater by pid algorithm.Heater is that the ceramics of annular add
Gas ket, heating is fast and relatively safer.It is a gas outlet on the left of reactor, carrier gas carrys to be risen by low boiling Solid Source
The source of China out is imported into " Solid Source air inlet " that one end i.e. Fig. 2 of inlet flange is marked from this outlet, is equally logical
Cross Φ 6 cutting ferrule snap joint connection.
When transmitting the gas that Solid Source distils out, special transmission channel i.e. 25mm diameters 500mm length is employed
The quartz ampoule transmission of degree.In order to be condensed when preventing midway from transmitting, heating tape is wound with outside, heating tape is heated to 150 DEG C, guarantor
It will not be condensed in card transmitting procedure；And all inlet flange O-ring seals are all using FFKM cushion rubbers, it is ensured that Bu Huiyin
There is carbon pollution for the quality problems of cushion rubber.
The vacuum of vacuum system is mainly produced by mechanical pump, mechanical pump model Edward RV8.Potted component bag
Include：Fluorine rubber ring, bellows, vacuum valve, and vacuum flange.
It is used to grow hexagonal boron nitride using above-mentioned chemical gas-phase deposition system.In this experiment using atmospheric pressure cvd come
Grow hexagonal boron nitride.Before growth, deposition chamber temperatures are first increased to 1025 DEG C, annealed 30 minutes, gas component is argon
Hydrogen gaseous mixture, flow is 400sccm.After the completion of annealing, it is warming up to 1065 DEG C of growth temperature and grows 10~30 minutes.Solid Source is adopted
It is ammonia borine, heating-up temperature is 70 DEG C, the carrier gas in source is 30:1 argon hydrogen gaseous mixture, flow 100scmm.
Obtained hexagonal boron nitride is detected using SEM, its stereoscan photograph, such as Fig. 7 is obtained
It is shown.By Fig. 7 it can be seen that the extraordinary triangle of pattern that the chemical gas-phase deposition system provided using the utility model is obtained
Shape monocrystalline, illustrates that this system can be well by quantity delivered of the evaporating temperature of voltage input so as to voltage input.
Claims (10)
1. a kind of chemical gas-phase deposition system, it is characterised in that including：
Chemical deposition room；The chemical deposition room includes reaction cavity；
It is arranged at the high-temperature heating equipment outside chemical deposition room；
The gas supply system being connected with chemical deposition room；The gas supply system includes gas source air inlet pipe and solid source
Gas inlet pipe, the solid source gas inlet pipe is located in the pipe of gas source air inlet pipe；The solid source gas inlet pipe
Outlet is connected with the reaction cavity of the chemical deposition room；The outlet of the gas source air inlet pipe and the chemical deposition room
Reaction cavity is connected；
The vacuum system being connected with the reaction cavity of chemical deposition room.
2. chemical gas-phase deposition system according to claim 1, it is characterised in that the chemical gas-phase deposition system is also wrapped
Include inlet flange；The inlet flange includes the first air inlet, the second air inlet and gas outlet；The first of the inlet flange enters
Gas port is connected with gas outlet；The gas outlet is connected by cutting ferrule interface with the gas source air inlet pipe；Described second enters
Gas port is connected with the solid source gas inlet pipe, and second air inlet is not connected with the first air inlet and gas outlet.
3. chemical gas-phase deposition system according to claim 1, it is characterised in that the gas source air inlet pipe it is a diameter of
40~60mm.
4. chemical gas-phase deposition system according to claim 1, it is characterised in that the solid source gas inlet pipe it is straight
Footpath is 20~30mm；Length is 400~600mm.
5. chemical gas-phase deposition system according to claim 1, it is characterised in that the chemical gas-phase deposition system is also wrapped
Include solid source heater；The solid source heater is connected with the import of the solid source gas inlet pipe.
6. chemical gas-phase deposition system according to claim 5, it is characterised in that the solid source heater is also set up
There is carrier gas inlet.
7. chemical gas-phase deposition system according to claim 5, it is characterised in that the solid source heater is also set up
There is temperature sensor.
8. chemical gas-phase deposition system according to claim 5, it is characterised in that twined outside the solid source gas inlet pipe
It is wound with heating tape.
9. chemical gas-phase deposition system according to claim 1, it is characterised in that the high-temperature heating equipment is with Si-Mo rod
As heating element heater, magnesia is used as temperature element as insulation material, N-type thermocouple.
10. chemical gas-phase deposition system according to claim 1, it is characterised in that the reaction cavity is quartz ampoule.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720306140.0U CN206607312U (en) | 2017-03-27 | 2017-03-27 | A kind of chemical gas-phase deposition system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720306140.0U CN206607312U (en) | 2017-03-27 | 2017-03-27 | A kind of chemical gas-phase deposition system |
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| CN206607312U true CN206607312U (en) | 2017-11-03 |
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ID=60173780
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| CN201720306140.0U Active CN206607312U (en) | 2017-03-27 | 2017-03-27 | A kind of chemical gas-phase deposition system |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106676498A (en) * | 2017-03-27 | 2017-05-17 | 中国科学技术大学 | Chemical vapor deposition system |
| CN109536930A (en) * | 2018-12-27 | 2019-03-29 | 合肥百思新材料研究院有限公司 | A kind of the multi-source two-dimensional material Preparation equipment and its working method of PE enhancing |
| CN112342529A (en) * | 2020-09-24 | 2021-02-09 | 杭州盾源聚芯半导体科技有限公司 | Injection pipe with connector |
-
2017
- 2017-03-27 CN CN201720306140.0U patent/CN206607312U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106676498A (en) * | 2017-03-27 | 2017-05-17 | 中国科学技术大学 | Chemical vapor deposition system |
| CN106676498B (en) * | 2017-03-27 | 2020-01-03 | 中国科学技术大学 | Chemical vapor deposition system |
| CN109536930A (en) * | 2018-12-27 | 2019-03-29 | 合肥百思新材料研究院有限公司 | A kind of the multi-source two-dimensional material Preparation equipment and its working method of PE enhancing |
| CN109536930B (en) * | 2018-12-27 | 2023-07-18 | 安徽贝意克设备技术有限公司 | Plasma enhanced multi-source two-dimensional material preparation equipment and working method thereof |
| CN112342529A (en) * | 2020-09-24 | 2021-02-09 | 杭州盾源聚芯半导体科技有限公司 | Injection pipe with connector |
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| GR01 | Patent grant | ||
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| TR01 | Transfer of patent right |
Effective date of registration: 20190417 Address after: 230088 Six Floors, E2 Floor, Phase II, Innovation Industrial Park, 2800 Innovation Avenue, Hefei High-tech Zone, Anhui Province Patentee after: Hefei native Quantum Computing Technology Co., Ltd. Address before: 230026 Jinzhai Road, Baohe District, Hefei, Anhui Province, No. 96 Patentee before: University of Science and Technology of China |
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| TR01 | Transfer of patent right |