CN206547048U - A kind of drive circuit for silicon carbide MOSFET - Google Patents
A kind of drive circuit for silicon carbide MOSFET Download PDFInfo
- Publication number
- CN206547048U CN206547048U CN201720251552.9U CN201720251552U CN206547048U CN 206547048 U CN206547048 U CN 206547048U CN 201720251552 U CN201720251552 U CN 201720251552U CN 206547048 U CN206547048 U CN 206547048U
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- module
- carbide mosfet
- drive
- drive circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Electronic Switches (AREA)
Abstract
The utility model provides a kind of drive circuit for silicon carbide MOSFET, including isolation module, drive module and resistive module, the isolation module, drive module and resistive module are sequentially connected, the positive driving voltage of the drive module is 18V to 22V, and the negative driving voltage of the drive module is 2.5V to 4.5V；The switching speed of silicon carbide MOSFET can be improved, reduces switching loss, and then carry the switching frequency of Switching Power Supply work；Silicon carbide MOSFET misoperation caused by parasitic parameter is prevented simultaneously, the reliability of silicon carbide MOSFET work is improved.
Description
Technical field
The utility model is related to a kind of drive circuit for silicon carbide MOSFET.
Background technology
Drive circuit is widely used in inside Switching Power Supply, in driving switch power supply device for power switching open with
Shut-off.With continuing to develop for Power Electronic Technique, the continuous improvement of the requirement of industry split powered-down source power density and efficiency,
High frequency high power density is one of development trend of Switching Power Supply, and the warp of the device for power switching based on silicon semiconductor material
Cross developing rapidly for decades, performance close to its material theoretical limit, as limit switch power source performance further optimization and
The bottleneck of development；To solve this problem, the device for power switching based on the third generation semi-conducting material using carborundum as representative
Arise at the historic moment.Silicon carbide MOSFET has the advantages such as high pressure, conducting resistance be small, switching loss is small and working frequency is high, to open
The development of the high frequency and high power density in powered-down source is filled with new power.
Silicon carbide MOSFET also causes its requirement and traditional silicon to drive circuit due to the difference and application requirement of material
There is certain difference in MOSFET and IGBT, specifically including silicon carbide MOSFET needs more high driving voltage relatively low to obtain
Conducting resistance, need to add certain negative pressure during shut-off to prevent device from misleading, reduce the parasitic of driving circuit and join
Number and increase current drive capability are acted with obtaining power switch pipe HF switch, suppress silicon carbide MOSFET in bridge circuit
Cross-interference issue etc., these all propose higher requirement to the drive circuit of silicon carbide MOSFET, if directly continuing to use existing silicon
MOSFET and IGBT drive scheme, it is easy to cause the failure of silicon carbide MOSFET.
Utility model content
The technical problems to be solved in the utility model, is to provide a kind of drive circuit for silicon carbide MOSFET, energy
The switching speed of silicon carbide MOSFET is enough improved, reduces switching loss, and then carry the switching frequency of Switching Power Supply work；Prevent simultaneously
Stop silicon carbide MOSFET misoperation caused by parasitic parameter, improve the reliability of silicon carbide MOSFET work.
What the utility model was realized in：A kind of drive circuit for silicon carbide MOSFET, including isolation module, drive
Dynamic model block and resistive module, the isolation module, drive module and resistive module are sequentially connected, and the drive module is just
Driving voltage is 18V to 22V, and the negative driving voltage of the drive module is -2.5V to -4.5V.
Further, the open resistance of the resistive module is 2 ohm to 8 ohm.
Further, the shut-off resistance of the resistive module is less than or equal to open resistance.
Further, the CMTI of the isolation module is more than or equal to 25kV/us.
The utility model has the advantage of：A kind of drive circuit for silicon carbide MOSFET of the utility model, is passing through
Experimental verification repeatedly, it is proposed that optimal positive drive voltage (being used to open silicon carbide MOSFET) and negative drive voltage
(being used to turn off silicon carbide MOSFET) scope；When being turned on by using the optimal positive drive voltage, making silicon carbide MOSFET
With relatively low conducting resistance, while being difficult to make device because instantaneous gate-source voltage exceedes its maximum forward driving voltage cause
Component failure；By applying the optimal negative drive voltage, silicon carbide MOSFET is set to be not susceptible to the phenomenon that misleads when turning off,
It is not easy to device is caused component failure because instantaneous gate-source voltage exceedes its minimum negative drive voltage simultaneously；
There is faster switching speed than traditional silicon power MOSFET and IGBT because silicon carbide MOSFET has, in switch
Pipe, which turns on and off process, can produce more serious electromagnetic noise interference, in order that the signal section of control system is not by power part
Point influence, it is necessary to which the ability CMTI that common mode electricity is resistant to drive circuit isolated part proposes certain requirement, through repeatedly
Experimental verification, when its CMTI is more than or equal to 25kV/us, the drive circuit can realize power section and signal section it is good every
From effect, the reliability and anti-interference of control system are improved.
Configuration is optimized to driving resistance, the arranging scheme of shut-off resistance, effectively suppression are more than or equal to using open resistance
Cross-interference issue of the silicon carbide MOSFET in bridge circuit is made, it is reliable that raising silicon carbide MOSFET works in bridge circuit
Property.
Brief description of the drawings
The utility model is further described in conjunction with the embodiments with reference to the accompanying drawings.
Fig. 1 is a kind of schematic diagram of drive circuit for silicon carbide MOSFET of the utility model.
Fig. 2 is a kind of drive module circuit diagram one of drive circuit for silicon carbide MOSFET of the utility model.
Fig. 3 is a kind of drive module circuit diagram two of drive circuit for silicon carbide MOSFET of the utility model.
Fig. 4 is a kind of resistive module embodiment one of drive circuit for silicon carbide MOSFET of the utility model.
Fig. 5 is a kind of resistive module embodiment two of drive circuit for silicon carbide MOSFET of the utility model.
Fig. 6 is a kind of resistive module embodiment three of drive circuit for silicon carbide MOSFET of the utility model.
Embodiment
Refer to shown in Fig. 1, the utility model is used for the drive circuit of silicon carbide MOSFET, including isolation module, driving
Module and resistive module, the isolation module, drive module and resistive module are sequentially connected, the positive drive of the drive module
Dynamic voltage is 18V to 22V, the negative driving voltage of the drive module is -2.5V to -4.5V, and the resistive module opens electricity
Hinder for 2 ohm to 8 ohm, the shut-off resistance of the resistive module is less than or equal to open resistance, the CMTI of the isolation module
More than or equal to 25kV/us.
As shown in Figures 2 and 3, the switching device in driver element both can the totem driving structure based on MOSFET,
Can also be and other driving structures expanded based on totem driving structure based on triode totem driving structure,
Its two ends is connected with positive drive voltage VDD and negative drive voltage VSS respectively；
Resistance unit both can be a resistor proposal (i.e. open resistance is equal to shut-off resistance, as shown in Figure 4), can also
Using diode branch road in series with a resistor and another resistor coupled in parallel scheme (this scheme can adjust open resistance and
The size of resistance is turned off, as shown in Figure 5), it also can select and open, turn off the separate driving chip of driving path, exist respectively
The scheme (as shown in Figure 6) for opening, turning off resistance accordingly is placed on corresponding driving path.
Wherein isolation module mainly realizes isolating between control signal part and power section, it is to avoid power device is opened
The noise of clearance stopping pregnancy life produces influence to control signal；Drive module is controlled by drive signal, when control carborundum
When MOSFET is turned on, drive module is applied to positive drive voltage in the gate-source of silicon carbide MOSFET by resistive module,
Realize the conducting of silicon carbide MOSFET；Similarly, when controlling silicon carbide MOSFET shut-off, drive module leads to negative sense drive signal
Cross resistive module to be applied in the gate-source of silicon carbide MOSFET, realize the shut-off of silicon carbide MOSFET.And by changing resistance
The resistance of driving resistance is opened, turned off in module, and can adjust silicon carbide MOSFET turns on and off speed.
The common-mode voltage rejection ratio of isolation module：
Because silicon carbide MOSFET has higher switching speed, its voltage change ratio dv/dt in switching process and
Current changing rate di/dt is also larger compared to the MOSFET and IGBT of silicon, therefore the common-mode voltage being resistant to drive circuit becomes
Rate (Common Mode Transient Immunity, CMTI) it is also proposed more stringent requirement.By test, use
Shadow of the drive signal by common-mode voltage of system can be greatly reduced in the isolation drive scheme that CMTI is more than or equal to 25kV/us
Ring, improve the reliability of system.
Because requirement of the silicon carbide MOSFET to driving voltage is harsher compared to for the MOSFET and IGBT of silicon, generally exist
Between+25V~-10V, the forward voltage spike in switching process between the gate-source of silicon carbide MOSFET is too high or negative sense
Due to voltage spikes is too low all may to cause the gate-source of silicon carbide MOSFET breakdown.Therefore, in the application of silicon carbide MOSFET
In, by repetition test, we are finally set to the positive driving voltage of silicon carbide MOSFET between 18~22V, it is ensured that carbon
SiClx MOSFET's is fully on, and negative driving voltage is set between -2.5~-4.5V, it is ensured that silicon carbide MOSFET it is reliable
Shut-off.In addition, suitably driving resistance type selecting can also effectively reduce the switching loss of system and the reliability of system, same warp
Cross and test repeatedly, we are in application silicon carbide MOSFET, and the driving resistance of selection is between 2~8 ohm, it is ensured that carbonization
Switching loss relatively low silicon MOSFET, can be effectively improved the reliability of device again.We are also by taking open resistance and shut-off
The separation of resistance, suitably resistance is turned on and off by choosing, further the switching characteristic of optimization silicon carbide MOSFET.
Although the foregoing describing embodiment of the present utility model, those familiar with the art should
Work as understanding, the specific embodiment described by us is merely exemplary, rather than for the limit to scope of the present utility model
Fixed, those skilled in the art should in the equivalent modification and change made according to spirit of the present utility model
Cover in scope of the claimed protection of the present utility model.
Claims (4)
1. a kind of drive circuit for silicon carbide MOSFET, it is characterised in that：Including isolation module, drive module and resistance
Module, the isolation module, drive module and resistive module are sequentially connected, and the positive driving voltage of the drive module is 18V
To 22V, the negative driving voltage of the drive module is -2.5V to -4.5V.
2. a kind of drive circuit for silicon carbide MOSFET as claimed in claim 1, it is characterised in that：The resistive module
Open resistance be 2 ohm to 8 ohm.
3. a kind of drive circuit for silicon carbide MOSFET as claimed in claim 2, it is characterised in that：The resistive module
Shut-off resistance be less than or equal to open resistance.
4. a kind of drive circuit for silicon carbide MOSFET as claimed in claim 1, it is characterised in that：The isolation module
CMTI be more than or equal to 25kV/us.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720251552.9U CN206547048U (en) | 2017-03-15 | 2017-03-15 | A kind of drive circuit for silicon carbide MOSFET |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720251552.9U CN206547048U (en) | 2017-03-15 | 2017-03-15 | A kind of drive circuit for silicon carbide MOSFET |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206547048U true CN206547048U (en) | 2017-10-10 |
Family
ID=59995560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720251552.9U Active CN206547048U (en) | 2017-03-15 | 2017-03-15 | A kind of drive circuit for silicon carbide MOSFET |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206547048U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106803715A (en) * | 2017-03-15 | 2017-06-06 | 泰科天润半导体科技（北京）有限公司 | A kind of drive circuit for silicon carbide MOSFET |
| US10171069B1 (en) | 2018-01-26 | 2019-01-01 | General Electric Company | Switch controller for adaptive reverse conduction control in switch devices |
| CN110177418A (en) * | 2019-05-15 | 2019-08-27 | 泉州师范学院 | A kind of silicon carbide HID lamp high frequency drive circuit |
| CN110311545A (en) * | 2019-07-25 | 2019-10-08 | 电子科技大学 | A kind of dv/dt noise measuring and eliminate circuit |
-
2017
- 2017-03-15 CN CN201720251552.9U patent/CN206547048U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106803715A (en) * | 2017-03-15 | 2017-06-06 | 泰科天润半导体科技（北京）有限公司 | A kind of drive circuit for silicon carbide MOSFET |
| US10171069B1 (en) | 2018-01-26 | 2019-01-01 | General Electric Company | Switch controller for adaptive reverse conduction control in switch devices |
| CN110177418A (en) * | 2019-05-15 | 2019-08-27 | 泉州师范学院 | A kind of silicon carbide HID lamp high frequency drive circuit |
| CN110311545A (en) * | 2019-07-25 | 2019-10-08 | 电子科技大学 | A kind of dv/dt noise measuring and eliminate circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN206547048U (en) | A kind of drive circuit for silicon carbide MOSFET | |
| CN106803715A (en) | A kind of drive circuit for silicon carbide MOSFET | |
| US10340906B2 (en) | Integrated bootstrap high-voltage driver chip and technological structure thereof | |
| CN103141028B (en) | Level shift circuit | |
| CN108988617A (en) | A kind of driving circuit and circuits improvement method of active suppression SiC MOSFET crosstalk phenomenon | |
| CN104883038A (en) | Half-bridge circuit employing negative voltage to turn off half-bridge circuit driver, and method | |
| CN107741756B (en) | Driving circuit with dynamically variable IGBT switching characteristic and protection method | |
| CN102324835A (en) | Insulated gate bipolar transistor (IGBT) driving circuit | |
| CN103633820A (en) | IGBT (insulated gate bipolar transistor) parallel current sharing circuit | |
| CN202260995U (en) | IGBT (Insulated Gate Bipolar Transistor) driving circuit | |
| CN107453335A (en) | A kind of dc circuit breaker and its control method | |
| CN207150147U (en) | Overvoltage crowbar and switching power supply | |
| CN107612528A (en) | A kind of pulse bandwidth filtering circuit arrangement | |
| CN103326315B (en) | A kind of under-voltage protecting circuit and high voltage integrated circuit | |
| CN202696454U (en) | Gate drive circuit | |
| CN100561871C (en) | Level shifting circuit | |
| CN206498388U (en) | Level shifting circuit | |
| CN110299826A (en) | A kind of spacecraft highly reliable isolated drive circuit of suitable wide duty ratio | |
| CN106849937A (en) | A kind of level shifting circuit | |
| CN116436453B (en) | Multi-level power device grid driver with miller clamping function | |
| CN104079289B (en) | Output circuit with ground bounce resistance | |
| CN202383186U (en) | Current sampling circuit of MOSFET switch component | |
| CN106953627A (en) | The gate driving circuit of power device | |
| CN204013450U (en) | Be applicable to the drain circuit of opening on the floating ground of high pressure | |
| CN110429562A (en) | Hybrid high voltage DC breaker and its control method based on normal open type SIC device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |