CN206531922U - Power frequency for testing IGCT level reverse recovery characteristic impacts synthetic test loop - Google Patents
Power frequency for testing IGCT level reverse recovery characteristic impacts synthetic test loop Download PDFInfo
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- CN206531922U CN206531922U CN201720231528.9U CN201720231528U CN206531922U CN 206531922 U CN206531922 U CN 206531922U CN 201720231528 U CN201720231528 U CN 201720231528U CN 206531922 U CN206531922 U CN 206531922U
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Abstract
The application is related to super high voltage direct current electricity transmission converter valve electrical test technical field, more particularly to a kind of power frequency impact synthetic test loop for being used to test IGCT level reverse recovery characteristic.The power frequency impact synthetic test loop includes power frequency supply module, impact power module, measurement module, the power frequency supply module is connected with IGCT level, the IGCT level is connected with the impact power module, and the measurement module is used for voltage, the electric current for measuring IGCT level.The power frequency impacts synthetic test loop, power frequency supply module can simulate the actual operating mode of converter valve thyristor level, effectively voltage tolerance of the detection converter valve thyristor in practical work process, realizes the investigation to thyristor device voltage endurance comprehensively.
Description
Technical field
The application is related to super high voltage direct current electricity transmission converter valve electrical test technical field, more particularly to a kind of for testing
The power frequency impact synthetic test loop of IGCT level reverse recovery characteristic.
Background technology
High-pressure thyristor from on-state to off-state change when, it is necessary to which by Reverse recovery, its essence is base excess carriers
Evanishment.When straight-flow system is normally run, converter valve thyristor bears negative sense power frequency ac voltage during turning off.
However, converter valve thyristor is easily impacted in recovery process by transient state pulse, such as commutation failure, thunder and lightning
Impact, the disturbance of AC network pressure can produce overvoltage at the two ends of IGCT, and reversely restoring process is often generation commutation failure
Or trigger the fragile link of thyristor failure.Therefore, the voltage tolerance progress investigation to IGCT convalescence seems outstanding
To be important.
At present, before converter valve is dispatched from the factory and during DC engineering operation maintenance, exchanged using converter valve test equipment (VTE)
Flow each thyristor device routine test in valve module.However, for thyristor device voltage endurance in VTE test events
The voltage tester for only containing thyristor device reverse blocking is investigated, the voltage tolerance for lacking IGCT convalescence is surveyed
Examination.Further, since VTE measuring technologies are grasped by foreign corporation for a long time, it is domestic not have reliable converter valve thyristor level at present
Test method and testing equipment.
Utility model content
The purpose of the application is lacked to solve the investigation in existing VTE test events for thyristor device voltage endurance
The problem of voltage tolerance of few IGCT convalescence is tested.
Therefore, being returned this application provides a kind of power frequency impact synthetic test for being used to test IGCT level reverse recovery characteristic
Road, including power frequency supply module, impact power module, measurement module,
The power frequency supply module is connected with IGCT level, and more than hundreds of amperes of power current is provided for IGCT level,
Simulate the actual operating mode of IGCT level；
The IGCT level is connected with the impact power module, and the impact power module provides transient state for IGCT level
Fast pulse；The measurement module is used for voltage, the electric current for measuring IGCT level；
The power frequency supply module includes high-voltage DC power supply A, charging resistor R1, storage capacitor C1, inductance L, controllable type electricity
Sub switch VT1；
The high-voltage DC power supply A passes through charging resistor R1With storage capacitor C1Connection, to storage capacitor C1Charged；
The storage capacitor C1Input be connected with the inductance L, the storage capacitor C1Output head grounding；
The output end of the inductance L and the controllable type electronic switch VT1Colelctor electrode connection, the controllable type electronic cutting
Close VT1Emitter stage and the IGCT level be connected；The controllable type electronic switch VT1For controlling leading for power frequency supply module
Logical and shut-off；
The impact power module includes high-voltage DC power supply B, charging resistor R2, storage capacitor C2, controllable type electronic switch
VT2, wave front resistance R3, storage capacitor C3, high-voltage diode D；
The high-voltage DC power supply B passes through charging resistor R2With storage capacitor C2Connection, to storage capacitor C2Charged；
The storage capacitor C2Input and the controllable type electronic switch VT2Colelctor electrode connection, the storage capacitor
C2Output head grounding；
The controllable type electronic switch VT2Emitter stage and the wave front resistance R3M ends connection；The controllable type electronics
Switch VT2Turn-on and turn-off for controlling impact power module, to be controlled in power frequency impact synthetic test loop
The application moment of surge voltage；
The wave front resistance R3N ends respectively with the storage capacitor C3, the high-voltage diode D anode tap connection；Institute
State storage capacitor C3Output head grounding, the cathode terminal of the high-voltage diode D is connected with IGCT level；
The measurement module includes divider, Rogowski coil, and the divider is used for the voltage for testing the IGCT level,
The Rogowski coil is used for the electric current for measuring the IGCT level.
Further, storage capacitor C in the power frequency supply module1With inductance L-shaped into underdamped oscillation, and meet as follows
Condition：And then more than hundreds of amperes of power current is provided for IGCT, it can correctly simulate the brilliant lock of converter valve
The accidental conditions of pipe level.
Further, the controllable type electronic switch VT1Pressure voltage be more than it is described impact power module crest voltage,
For isolating impacting with high pressure voltage for the power frequency supply module.
Further, the pressure voltage of the impact power module mesohigh diode D is more than the storage capacitor C1Mark
Claim voltage, for isolating storage capacitor C in power frequency supply module for the impact power module1Charging voltage.
Further, storage capacitor C in the impact power module3Capacitance be less than storage capacitor C2Capacitance.
The technical scheme that the application is provided includes following beneficial effect：The power frequency impacts synthetic test loop, power frequency electric
Source module can simulate the actual operating mode of converter valve thyristor level, effectively detect converter valve thyristor in real work
Voltage tolerance in journey, realizes the investigation to thyristor device voltage endurance comprehensively.
Brief description of the drawings
In order to illustrate more clearly of the technical scheme of the application, letter will be made to the required accompanying drawing used in embodiment below
Singly introduce, it should be apparent that, for those of ordinary skills, without having to pay creative labor,
Other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 impacts synthetic test for the power frequency for being used to test IGCT level reverse recovery characteristic that the embodiment of the present application is provided
The circuit diagram in loop.
Embodiment
Accompanying drawing herein is merged in specification and constitutes the part of this specification, shows the implementation for meeting the application
Example, and be used to together with specification to explain the principle of the application.
, below will be to embodiment or existing in order to illustrate more clearly of the embodiment of the present application or technical scheme of the prior art
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, for those of ordinary skill in the art
Speech, without having to pay creative labor, can also obtain other accompanying drawings according to these accompanying drawings.
Converter valve thyristor is easily impacted in recovery process by transient state pulse, for example commutation failure, lightning impulse,
The disturbance of AC network pressure can produce overvoltage at the two ends of IGCT, and reversely restoring process is often to occur commutation failure or draw
Send out the fragile link of thyristor failure.Therefore, the voltage tolerance progress investigation to IGCT convalescence is particularly important.
At present, before converter valve is dispatched from the factory and during DC engineering operation maintenance, using converter valve test equipment (VTE) to converter valve components
In each thyristor device routine test.However, in VTE test events for thyristor device voltage endurance investigation only
The voltage tester of thyristor device reverse blocking is contained, lacks the voltage tolerance test of IGCT convalescence.In addition, by
Grasped for a long time by foreign corporation in VTE measuring technologies, it is domestic do not have at present reliable converter valve thyristor level test method and
Testing equipment.
The technical scheme that the application is provided, including power frequency supply module, impact power module, measurement module, the power frequency
Power module is connected with IGCT level, and the IGCT level is connected with the impact power module, and the measurement module is used to survey
Measure voltage, the electric current of IGCT level.The power frequency impacts synthetic test loop, and power frequency supply module can simulate the brilliant lock of converter valve
The actual operating mode of pipe level, effectively detects voltage tolerance of the converter valve thyristor in practical work process, comprehensively
Realize the investigation to thyristor device voltage endurance.
Reach technological means and effect that predetermined purpose is taken for the application is expanded on further, below in conjunction with accompanying drawing and reality
Embodiment, architectural feature and its effect of the example to the application are applied, is described in detail as follows.
A kind of power frequency impact for being used to test IGCT level reverse recovery characteristic shown in Figure 1, being provided for the application
The circuit diagram of synthetic test loop, including power frequency supply module, impact power module, measurement module,
The power frequency supply module is connected with IGCT level, and more than hundreds of amperes of power current is provided for IGCT level,
Simulate the actual operating mode of IGCT level；
The IGCT level is connected with the impact power module, and the impact power module provides transient state for IGCT level
Fast pulse；The measurement module is used for voltage, the electric current for measuring IGCT level；
The power frequency supply module produces power current, including high-voltage DC power supply A, charging resistor by LC oscillation circuits
R1, storage capacitor C1, electric discharge inductance L, controllable type electronic switch VT1；
The high-voltage DC power supply A passes through charging resistor R1With storage capacitor C1Connection, to storage capacitor C1Charged；
The storage capacitor C1Input be connected with the electric discharge inductance L, the storage capacitor C1Output head grounding；
The output end of the inductance L and the controllable type electronic switch VT1Colelctor electrode connection, the controllable type electronic cutting
Close VT1Emitter stage and the IGCT level be connected；The controllable type electronic switch VT1For controlling leading for power frequency supply module
Logical and shut-off；
Further, storage capacitor C in the power frequency supply module1With inductance L-shaped into underdamped oscillation, and meet as follows
Condition：And then more than hundreds of amperes of power current is provided for IGCT, it can correctly simulate the brilliant lock of converter valve
The accidental conditions of pipe level.
The impact power module includes high-voltage DC power supply B, charging resistor R2, storage capacitor C2, controllable type electronic switch
VT2, wave front resistance R3, storage capacitor C3, high-voltage diode D；
The high-voltage DC power supply B passes through charging resistor R2With storage capacitor C2Connection, to storage capacitor C2Charged；
The storage capacitor C2Input and the controllable type electronic switch VT2Colelctor electrode connection, the storage capacitor
C2Output head grounding；
The controllable type electronic switch VT2Emitter stage and the wave front resistance R3M ends connection；The controllable type electronics
Switch VT2Turn-on and turn-off for controlling impact power module, to be controlled in power frequency impact synthetic test loop
The application moment of surge voltage；
The wave front resistance R3N ends respectively with the storage capacitor C3, the high-voltage diode D anode tap connection；Institute
State storage capacitor C3Output head grounding, the cathode terminal of the high-voltage diode D is connected with IGCT level；
The measurement module includes divider, Rogowski coil, and the divider is used for the voltage for testing the IGCT level,
The Rogowski coil is used for the electric current for measuring the IGCT level.
Further, the controllable type electronic switch VT1Pressure voltage be more than it is described impact power module crest voltage,
For isolating impacting with high pressure voltage for the power frequency supply module.
Further, the pressure voltage of the impact power module mesohigh diode D is more than the storage capacitor C1Mark
Claim voltage, for isolating storage capacitor C in power frequency supply module for the impact power module1Charging voltage.
Further, storage capacitor C in the impact power module3Capacitance be less than storage capacitor C2Energy storage value.
The power frequency impact synthetic test loop that the application is provided, power frequency supply module can simulate converter valve thyristor level
Actual operating mode, effectively detects voltage tolerance of the converter valve thyristor in practical work process, comprehensively realization pair
The investigation of thyristor device voltage endurance.
Described above is only the embodiment of the application, is made skilled artisans appreciate that or realizing this Shen
Please.A variety of modifications to these embodiments will be apparent to one skilled in the art, as defined herein
General Principle can in other embodiments be realized in the case where not departing from spirit herein or scope.Therefore, the application
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
It should be appreciated that the structure that the application is not limited to be described above and is shown in the drawings, and can
To carry out various modifications and changes without departing from the scope.Scope of the present application is only limited by appended claim.
Claims (5)
1. the power frequency impact synthetic test loop for testing IGCT level reverse recovery characteristic, it is characterised in that including power frequency
Power module, impact power module, measurement module,
The power frequency supply module is connected with IGCT level, and the IGCT level is connected with the impact power module, described to survey
Amount module is used for voltage, the electric current for measuring IGCT level；
The power frequency supply module includes high-voltage DC power supply A, charging resistor R1, storage capacitor C1, inductance L, controllable type electronic cutting
Close VT1；The high-voltage DC power supply A passes through charging resistor R1With storage capacitor C1Connection, the storage capacitor C1Input with
The inductance L connections, the storage capacitor C1Output head grounding；The output end of the inductance L and the controllable type electronic cutting
Close VT1Colelctor electrode connection, the controllable type electronic switch VT1Emitter stage and the IGCT level be connected；
The impact power module includes high-voltage DC power supply B, charging resistor R2, storage capacitor C2, controllable type electronic switch VT2、
Wave front resistance R3, storage capacitor C3, high-voltage diode D；The high-voltage DC power supply B passes through charging resistor R2With storage capacitor C2
Connection, the storage capacitor C2Input and the controllable type electronic switch VT2Colelctor electrode connection, the storage capacitor C2
Output head grounding；The controllable type electronic switch VT2Emitter stage and the wave front resistance R3M ends connection；The wave head electricity
Hinder R3N ends respectively with the storage capacitor C3, the high-voltage diode D anode tap connection；The storage capacitor C3Output
End ground connection, the cathode terminal of the high-voltage diode D is connected with IGCT level；
The measurement module includes divider, Rogowski coil, and the divider is used for the voltage for testing the IGCT level, described
Rogowski coil is used for the electric current for measuring the IGCT level.
2. power frequency according to claim 1 impacts synthetic test loop, it is characterised in that the storage capacitor C1With inductance L
Underdamped oscillation is formed, and meets following condition：
3. power frequency according to claim 1 impacts synthetic test loop, it is characterised in that the controllable type electronic switch VT1
Pressure voltage be more than it is described impact power module crest voltage.
4. power frequency according to claim 1 impacts synthetic test loop, it is characterised in that the high-voltage diode D's is resistance to
Pressure value is more than the storage capacitor C1Nominal voltage.
5. power frequency according to claim 1 impacts synthetic test loop, it is characterised in that the storage capacitor C3Electric capacity
Value is less than storage capacitor C2Capacitance.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720231528.9U CN206531922U (en) | 2017-03-10 | 2017-03-10 | Power frequency for testing IGCT level reverse recovery characteristic impacts synthetic test loop |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106707127A (en) * | 2017-03-10 | 2017-05-24 | 云南电网有限责任公司电力科学研究院 | Industrial frequency impact synthesis test loop for testing thyristor level reverse restoration characteristics |
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2017
- 2017-03-10 CN CN201720231528.9U patent/CN206531922U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106707127A (en) * | 2017-03-10 | 2017-05-24 | 云南电网有限责任公司电力科学研究院 | Industrial frequency impact synthesis test loop for testing thyristor level reverse restoration characteristics |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210426 Address after: Yunda economic and Technological Development Zone in Yunnan province Kunming city 650217 West Road No. 105 Patentee after: YUNNAN POWER GRID CO., LTD. ELECTRIC POWER Research Institute Address before: Yunda economic and Technological Development Zone in Yunnan province Kunming city 650217 West Road No. 105 Patentee before: YUNNAN POWER GRID CO., LTD. ELECTRIC POWER Research Institute Patentee before: XI'AN DOWAY ELECTRIC TECHNOLOGY Co.,Ltd. |
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