CN206521536U - Crucible device - Google Patents
Crucible device Download PDFInfo
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- CN206521536U CN206521536U CN201621493497.6U CN201621493497U CN206521536U CN 206521536 U CN206521536 U CN 206521536U CN 201621493497 U CN201621493497 U CN 201621493497U CN 206521536 U CN206521536 U CN 206521536U
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- crucible
- crucible cover
- cover
- inductance loop
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Abstract
The utility model offer is a kind of to improve the crucible device of being heated evenly property of seed crystal, and it includes crucible body, crucible cover and at least one inductance loop.Crucible body is in barrel-shaped, and with bucket bottom, bucket wall and open top, wherein bucket bottom and bucket wall surrounds the accommodation space for holding material;Crucible cover is covered on the open top of crucible body, and crucible cover has the inner surface towards bucket bottom and the outer surface away from bucket bottom;At least one inductance loop is arranged concentrically in the simultaneously inner surface of close crucible, and the center of at least one inductance loop and the center of crucible cover are on same straight line in crucible cover.The utility model crucible device reduces crucible cover radial symmetry gradient, effectively increase the overall temperature homogeneity of crucible cover, crystal can be generated into be arranged at the silicon carbide seed of crucible interior surface center and provide good condition, improve the uniformity of seed crystal radial temperature, the thermal stress in crystal growing process is reduced, so as to grow the crystal that mass is high.
Description
Technical field
The utility model is related to technical field of semiconductors, more particularly to a kind of earthenware that carborundum crystals are grown for PVT methods
Crucible device.
Background technology
Carborundum causes extensive concern as a kind of new semiconductor material with wide forbidden band.High temperature, high-frequency and
It is more more excellent than traditional sapphire and silicon in high-power application, the characteristic of carborundum mainly comprising high-melting-point, high conductivity,
High-termal conductivity and high voltage withstanding etc., therefore the important materials as high-frequency and high-power component, are widely used in aviation, boat
My god, the key areas such as rocket, geological drilling.
Growth single-crystal silicon carbide generally uses physical carbon burdening (PVT methods) at present, and silicon carbide seed is attached into graphite
On crucible cover, graphite crucible is heated to 1800-2500 built with the carborundum powder source as growth raw material, carborundum powder source
DEG C, then it can be sublimate on seed crystal, in seed crystal face cooling deposition generation monocrystalline.The heater of graphite crucible is a medium frequency electric
Source, graphite crucible is positioned over induction coil center, and the alternating current of intermediate frequency power supply produces alternating magnetic field, graphite earthenware by induction coil
Crucible produces vortex electricity in alternating magnetic field and generates amount of heat, so as to heat carborundum powder source and seed crystal.Due to becoming for conductor
Skin effect, the vortex flow that alternation sensing is produced tends to sidewall of crucible and crucible cover side wall, thus on crucible cover heat in crucible cover
Side wall is produced, and is transmitted from crucible cover side wall to crucible cover center, so that be high-temperature region close to crucible cover sidewall locations, closer to
Crucible cover central temperature is lower, and crucible cover center is low-temperature space.Because seed crystal is from crucible cover acquisition heat, this allows for seed crystal
Edge and center be heated it is uneven, with larger radial symmetry gradient.Excessive radial symmetry gradient can cause crystal growth
During thermal stress it is excessive, easily produce the defect such as micro-pipe, the monocrystalline of seed crystal center deposition is more than edge, cause crystal
Growing end face cone degree is big, when being unfavorable for post-production, particularly growing large-size monocrystalline, and crucible is relatively large in diameter, this phenomenon
It is more obvious.
Above- mentioned information is only used for strengthening the understanding of background of this disclosure disclosed in background section, therefore it can be with
Including not constituting the information to prior art known to persons of ordinary skill in the art.
Utility model content
The purpose of this utility model is that seed crystal can be improved there is provided one kind by solving the problem of crucible cover radial symmetry gradient is big
The crucible device of being heated evenly property.
According to one side of the present utility model, a kind of crucible device, including crucible body, crucible cover and at least one sense
Ying Huan.Crucible body is in barrel-shaped, with bucket bottom, bucket wall and open top, wherein the bucket bottom and bucket wall are surrounded for holding thing
The accommodation space of material;Crucible cover is covered on the open top of the crucible body, and the crucible cover has towards the bucket bottom
Inner surface and the outer surface away from the bucket bottom;At least one inductance loop is arranged concentrically in the crucible cover and close to the earthenware
The inner surface of crucible, and the center of at least one inductance loop and the center of the crucible cover are on same straight line.
According to an embodiment of the present utility model, the quantity of the inductance loop is multiple, along by the crucible cover
Center in peripheral direction, the distance between two neighboring described inductance loop becomes larger in multiple inductance loops;Or
The distance between the two neighboring inductance loop is equal.
According to an embodiment of the present utility model, at least one described inductance loop is embedded in the crucible cover or solid
Due on the inner surface of crucible cover.
According to an embodiment of the present utility model, the periphery of the inner surface of the crucible cover is provided with internal projecting ring;And/or institute
The periphery for stating the outer surface of crucible cover is provided with outer bulge loop.
According to an embodiment of the present utility model, hollow bulb at least is provided with middle section in the crucible cover, it is described
Hollow part is between the inner surface of the crucible cover and outer surface, and at least one described inductance loop is arranged at the crucible cover
It is interior.
According to an embodiment of the present utility model, the hollow bulb is in disk form, and its center of circle is in the crucible cover
On center line.
According to an embodiment of the present utility model, the crucible cover is in disk form, the crucible cover and the hollow bulb
Radius difference be 1.5~3.5 centimetres;And/or the thickness between the inner surface and the hollow bulb of the crucible cover is 5~20
Millimeter.
According to an embodiment of the present utility model, the thickness between the inner surface of the crucible cover and the hollow bulb is
1.63~2.93 millimeters;And/or the thickness between the inner surface and the hollow bulb of the crucible cover is 6~16 millimeters.
According to an embodiment of the present utility model, it is higher than the crucible cover filled with thermal conductivity factor in the hollow bulb
Filler.
According to an embodiment of the present utility model, the crucible body and/or the crucible cover are made up of graphite, and/
Or the filler is made up of graphene.
As shown from the above technical solution, advantage of the present utility model and advantageous effects are:The utility model crucible
Device, due to being arranged concentrically at least one inductance loop in crucible cover and close to the inner surface of the crucible, inductance loop is in sense
It can produce induced-current in the case of answering coil heats and produce induction heat, this part induction heat can be transferred to crucible cover rapidly
Inner surface, so reducing the temperature difference at crucible cover periphery and center, that is, reduces crucible cover radial symmetry gradient, effectively improves
The overall temperature homogeneity of crucible cover, can generate into crystal to be arranged at the silicon carbide seed of crucible interior surface center and carry
Good condition has been supplied, that is, has improved the uniformity of seed crystal radial temperature, the thermal stress in crystal growing process is reduced, so that
The high crystal of mass can be grown.
By description of a preferred embodiment referring to the drawings in the utility model, it is of the present utility model above-mentioned and its
Its objects, features and advantages will be apparent from.
Brief description of the drawings
Fig. 1 is the structural representation of the embodiment of the utility model crucible device one;
Fig. 2 is a kind of structural representation of crucible cover in the utility model crucible device;
Fig. 3 is the profile along A-A faces in Fig. 2.
In figure:1st, crucible body;11st, bucket bottom;12nd, bucket wall;2nd, crucible cover;21st, inner surface;22nd, outer surface;23rd, convex
Ring;24th, outer bulge loop;25th, filler;26th, inductance loop;100th, seed crystal;200th, carborundum powder.
Embodiment
Example embodiment is described more fully with referring now to accompanying drawing.However, example embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to embodiment set forth herein;On the contrary, thesing embodiments are provided so that the disclosure will
Fully and completely, and by the design of example embodiment those skilled in the art is comprehensively conveyed to.Identical accompanying drawing in figure
Mark represents same or similar structure, thus will omit their detailed description.
Referring to Fig. 1, Fig. 2 and Fig. 3.Fig. 1 is the structural representation of the embodiment of the utility model crucible device one;Fig. 2 is
A kind of structural representation of crucible cover 2 in the utility model crucible device;Fig. 3 is the profile along A-A faces in Fig. 2.
As shown in Figure 1, Figure 2 and Figure 3, the embodiment of the utility model crucible device one includes crucible body 1 and crucible cover
2.Further, the embodiment of the utility model crucible device one also includes the heater for heating crucible device, should add
Thermal such as induction coil can be set around the periphery of crucible body 1 and crucible cover 2, can also be set around a vacuum chamber
Put, crucible device is arranged in vacuum chamber.
As shown in figure 1, crucible body 1 can be in barrel-shaped, it has bucket bottom 11, bucket wall 12 and open top.Wherein bucket bottom
11 and bucket wall 12 surround an accommodation space, the accommodation space can be used for hold material such as carborundum powder or silicon-carbide particle.
In this embodiment, crucible body 1 is that drum-shaped, i.e. bucket bottom 11 are in disk form, and bucket wall 12 is a cylinder.This certain practicality is new
Type is not limited thereto, in some other embodiment, and crucible body 1 can also be the shape such as prismatic bucket or cone bucket.
As depicted in figs. 1 and 2, crucible cover 2 is covered on the open top of crucible body 1, to coordinate drum-shaped crucible body
1, crucible cover 2 is in disk form.
Crucible cover 2 has the inner surface 21 towards bucket bottom 11 and the outer surface 22 away from bucket bottom 11.The inner surface of crucible cover 2
21 periphery is provided with internal projecting ring 23, and the end face of internal projecting ring 23 can be docked or with it with the top ends of bucket wall 12 of crucible body 1
He connects mode, so that crucible cover 2 is covered on crucible body 1.Therefore in present embodiment, it is only necessary to outstanding to internal projecting ring 23
It is the end face contacted with crucible body 1 the progress finishing processing of the internal projecting ring 23, without all entering to whole crucible cover 2
Row finishing is handled, you can is met the assembly precision requirement of crucible cover 2 and crucible body 1, is conducive to simplifying manufacturing process, convenient
Use, and manufacturing cost can be reduced.Certainly in other embodiments, internal projecting ring 23 is not necessarily set.In present embodiment,
The periphery of the outer surface 22 of crucible cover 2 is provided with outer bulge loop 24.Internal projecting ring 23 and outer bulge loop 24 can effectively lift the firm of crucible cover 2
Property, prevent crucible cover 2 from deforming at high temperature;An angle is changed to say, in the case of with internal projecting ring 23 and outer bulge loop 24, crucible cover 2
Main part can be made than relatively thin, not only save raw material, and beneficial to temperature control.
A hollow bulb at least is provided with middle position in crucible cover 2, hollow part is in the inner surface 21 and appearance of crucible cover 2
Between face 22.Such as graphene of filler 25 of high thermal conductivity coefficient is filled with hollow bulb.Pass through the graphene of good heat conductivity
The heat of the periphery of crucible cover 2 is conducted to the middle section of crucible cover 2, so as to reduce the radial symmetry gradient of crucible cover 2, footpath is improved
To temperature homogeneity.Certain filler 25 is not limited to graphene, and other high heat conductive materials can also be applied to this practicality
In new.
In this embodiment, the material selection group mode of crucible body 1, crucible cover 2 and filler 25, preferably
, crucible body 1 and crucible cover 2 are made up of graphite, and filler 25 is made up of graphene.The utility model not limited to this, at it
In his some embodiments, as long as meeting material of the thermal conductivity factor higher than the thermal conductivity factor of crucible cover 2 of the filler 25 of hollow bulb
Expect that selection scheme is feasible.
It is preferred that, hollow bulb is in disk form, and its center of circle is on the center line of crucible cover 2.It is filled in the graphite of hollow bulb
Alkene is also in disk form, now, and graphene is except that can conduct the heat of the periphery of crucible cover 2 to the middle section of crucible cover 2, also
Induced-current can be produced and produce induction heat, this partial heat can further improve the temperature of the middle section of crucible cover 2, so that
Further lift the radial temperature uniformity of whole crucible cover 2.
In some embodiments, hollow bulb is not only arranged at the middle section of crucible cover 2, and is to try to extend to earthenware
The outer edge of crucible lid 2, more induction heat are produced to strengthen induced-current.The difference R of such as radius of crucible cover 2 and hollow bulb is
1.5~3.5cm (centimetre), preferably 1.63cm~2.93cm, more preferably 1.63cm~2.0cm.Preferably
In, the difference R of the radius of crucible cover 2 and hollow bulb is 1.65cm.R values can be calculated by following expression formula:
In formula, ρ is the resistivity (Ω .cm) of heating object (crucible cover 2), and crucible cover 2 is by high-purity in the embodiment
Graphite material is made, then ρ=8.5 × 10-4 Ω cm, μrFor the relative permeability of heating object (crucible cover 2), for stone
The nonmagnetic substances such as ink, then μr=1, f are power frequency (Hz), and IF-FRE takes the f to be respectively generally in 2500~8000Hz
2500Hz and 8000Hz, scopes of the R in 1.63cm~2.93cm can be obtained by substituting into above formula.According to sensing heating kelvin effect principle, R
Value is smaller in allowed limits may then to obtain thinner T (see below) values, therefore, under suitable conditions, and R values can be with
It is smaller, such as 1.55cm, 1.5cm, 1.4cm, etc..
Generally, seed crystal 100 is attached on the inner surface 21 of crucible cover 2, for keep seed crystal 100 along crucible cover 2 radially
The temperature homogeneity in direction, the graphene of high heat conduction is better closer to seed crystal 100, i.e. the inner surface 21 and graphene of crucible cover 2
Between the thickness T of part get over Bao Yuehao, can so make crucible cover 2 due to thickness it is too thick caused by temperature inequality influence drop
It is low, but excessively thin thickness is easily caused fusing and burnt, and because the area of whole crucible cover 2 is larger, excessively thin thickness is in high temperature
Under also easy warpage.Therefore the utility model is set by PVT Proper Design special-purpose software Virtual Reactor thermal field simulation
The thickness for counting the part between the inner surface 21 and graphene of crucible cover 2 is 10mm (millimeter), and certain the utility model is not with this
It is limited, it is generally the case that the thickness, in 5~20mm, is preferentially feasible in the range of 6~16mm, for example the part is thick
Spend for 8~12mm, 8mm thickness is for example for growing 2 inches of SiC crystal, and 12mm thickness is for example for growing 4 inches of SiC
Crystal.
As depicted in figs. 1 and 2, in the embodiment of the utility model crucible device one, multiple concentric cloth are provided with hollow bulb
The inductance loop 26 put, inductance loop 26 can produce induced-current in the case where induction coil is heated and produce induction heat, these heat
Amount can largely be conducted to filler 25, and small part passes layer to the inner surface 21 of crucible cover 2, helps to make crucible cover 2 keep foot
Enough temperature.In addition, multiple inductance loops 26 can also separate the part of filler 25, the string of melting filler 25 is reduced
Stream, to reduce disturbance of the flowing to temperature, makes temperature control more stablize.Preferably, these inductance loops 26 are disposed in proximity to earthenware
The position of the lower surface 21 of crucible lid 2, for example, can be integrally formed with the lower surface 21 of crucible cover 2.It is smaller in the diameter of crucible cover 2
In the case of, the quantity of inductance loop 26 can also be one, be disposed in proximity to the central area of crucible cover 2.
Further, along on from the center of hollow bulb to peripheral direction, two neighboring crucible in multiple inductance loops 26
The distance between lid center becomes larger, that is to say, that more intensive closer to the center inductance loop 26 of crucible cover 2, the sensing of generation
Electric current is stronger, then induction heat is more.Due in traditional crucible device, being high-temperature region close to crucible cover neighboring area, more leaning on
Nearly crucible cover central temperature is lower, and crucible cover center is low-temperature space.The utility model passes through more toward crucible cover central area cloth
More intensive inductance loop 26 is put, to make up more toward the lower temperature in crucible cover central area, so as to be obviously improved crucible cover footpath
To the uniformity of temperature.In some other embodiment, such as quantity of inductance loop 26 is more, arranges comparatively dense, or crucible
Radial dimension it is smaller etc., the distance between two neighboring crucible cover center can also be equal in multiple inductance loops 26, i.e., multiple
The equidistantly arrangement with one heart of inductance loop 26.
The utility model crucible device, can also be not provided with hollow bulb, and only set inductance loop 26.In manufacture crucible cover 2
When, inductance loop 26 can be embedded in crucible cover 2;Inductance loop 26 can also be fixed on the inner surface 21 of crucible cover 2.It is excellent
Selection of land, the center of inductance loop 26 is with the center of crucible cover 2 on same straight line.
When in use, material such as carborundum powder 200 is contained in crucible body 1 for the utility model crucible device, will
One seed crystal 100 is pasted on the center of the inner surface 21 of crucible cover 2.Induction coil (not shown) can be used to be added
Heat, crucible body 1 and the periphery of crucible cover 2 produce vortex flow, and vortex flow produces heat, and the heat of crucible body 1 passes through bucket wall 12
Carborundum powder 200 is passed to, the heat of crucible cover 2 is transmitted from periphery by the graphene of high heat conduction to center, further transmission
Seed crystal 100;When being heated to the sublimation temperature of carborundum powder 200, substantial amounts of reaction atmosphere, these reaction atmospheres flow direction temperature are produced
The relatively low seed crystal 100 of degree, in the surface cooling of seed crystal 100 deposition.Due to being filled with the stone of high heat conduction system inside crucible cover 2
Black alkene 25, substantially increases the transmission speed of heat so that there is more uniform radial temperature on the surface of seed crystal 100, produces less
Thermal stress, so as to improve the growth quality of crystal.
Contrast experiment is carried out using the crucible device of size identical graphite, according to identical growing silicon carbice crystals technique
Growth, crucible cover temperature control is at 2150 DEG C, and crucible body bottom temp is controlled at 2300 DEG C, grow within 80 hours, is obtained
The crystal obtained is as follows:
Experiment one:
Using the crucible of the crucible device of traditional graphite, i.e. crucible cover without hollow bulb and high thermal conductivity coefficient filler
Device, growth terminates gained crystal thickness 23.8mm, 5 ° of end face taper.
Experiment two:
Using crucible device of the present utility model, crucible device of the crucible cover provided with hollow bulb and graphene (is not provided with sense
Ying Huan), gained crystal thickness 23.2mm, 1.5 ° of end face taper at the end of growth.
Experiment three:
Using crucible device of the present utility model, crucible cover is provided with hollow bulb and graphene, and sets many in hollow bulb
Individual inductance loop, gained crystal thickness 23.1mm, 0.5 ° of end face taper at the end of growth.
By contrast experiment one, experiment two and experiment three as can be seen that crucible device of the present utility model is due in crucible
Lid hollow bulb adds height and led after the graphene of coefficient, and the taper of crystal growth end face is substantially reduced;Further, hollow
Set in portion after inductance loop, the taper of crystal growth end face is further obviously reduced.
Although use the term of relativity in this specification, such as " on " " under " describes a component of icon for another
The relativeness of one component, but these terms are used in this specification merely for convenient, for example with reference to the accompanying drawings in example
Direction.Be appreciated that, if making it turn upside down the upset of the device of icon, describe " on " component will turn into
" under " component.When certain structure other structures " on " when, it is possible to refer to that certain structural integrity is formed in other structures, or
Refer to certain structure " direct " to be arranged in other structures, or refer to certain structure and be arranged on by another structure " indirect " in other structures.
Term " first ", " second " etc. are only used as mark, are not the quantity limitations to its object.
In the claims, term " one ", " one ", " " and " at least one " to represent to exist it is one or more will
Element/part/etc.;Term "comprising", " comprising " and " having " are to represent the open meaning being included and be
Refer to except the key element listed/part/also may be present in addition to waiting other key element/part/etc..
It should be appreciated that the utility model be not limited in its application to this specification proposition part detailed construction and
Arrangement.The utility model can have other embodiment, and can realize and perform in many ways.It is foregoing to become
Shape form and modification fall in the range of the utility model.It should be appreciated that this disclosure and this reality limited
Mentioned or all alternative groups of two or more obvious independent features with the new text and/or drawings that extend to
Close.All these different combinations constitute multiple alternative aspects of the present utility model.The embodiment of this specification is illustrated
Become known for realizing best mode of the present utility model, and those skilled in the art will be enable to utilize the utility model.
Claims (10)
1. a kind of crucible device, it is characterised in that including:
Crucible body, in barrel-shaped, with bucket bottom, bucket wall and open top, wherein the bucket bottom and bucket wall are surrounded for holding thing
The accommodation space of material;
Crucible cover, is covered on the open top of the crucible body, the crucible cover have towards the bucket bottom inner surface and
Outer surface away from the bucket bottom;
At least one inductance loop, it is arranged concentrically in the simultaneously inner surface of the close crucible, and institute in the crucible cover
The center of at least one inductance loop and the center of the crucible cover are stated on same straight line.
2. crucible device as claimed in claim 1, it is characterised in that the quantity of the inductance loop is multiple, along by institute
The center of crucible cover is stated in peripheral direction, the distance between two neighboring described inductance loop gradually becomes in multiple inductance loops
Greatly;Or the distance between the two neighboring inductance loop is equal.
3. crucible device as claimed in claim 1, it is characterised in that at least one described inductance loop is embedded in the crucible cover
It is interior or be fixed on the inner surface of crucible cover.
4. crucible device as claimed in claim 1, it is characterised in that the periphery of the inner surface of the crucible cover is provided with convex
Ring;And/or the periphery of the outer surface of the crucible cover is provided with outer bulge loop.
5. the crucible device as described in claim any one of 1-4, it is characterised in that at least in middle section in the crucible cover
Provided with hollow bulb, the hollow part is between the inner surface of the crucible cover and outer surface, and at least one described inductance loop is set
It is placed in the crucible cover.
6. crucible device as claimed in claim 5, it is characterised in that the hollow bulb is in disk form, and its center of circle is described
On the center line of crucible cover.
7. crucible device as claimed in claim 5, it is characterised in that the crucible cover is in disk form, the crucible cover and institute
The difference for stating the radius of hollow bulb is 1.5~3.5 centimetres;And/or the thickness between the inner surface and the hollow bulb of the crucible cover
Spend for 5~20 millimeters.
8. crucible device as claimed in claim 7, it is characterised in that between the inner surface of the crucible cover and the hollow bulb
Thickness be 1.63~2.93 millimeters;And/or the thickness between the inner surface and the hollow bulb of the crucible cover is 6~16 millis
Rice.
9. crucible device as claimed in claim 5, it is characterised in that filled with thermal conductivity factor higher than described in the hollow bulb
The filler of crucible cover.
10. crucible device as claimed in claim 9, it is characterised in that the crucible body and/or the crucible cover are by graphite
It is made, and/or the filler is made up of graphene.
Priority Applications (1)
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CN201621493497.6U CN206521536U (en) | 2016-12-30 | 2016-12-30 | Crucible device |
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CN201621493497.6U CN206521536U (en) | 2016-12-30 | 2016-12-30 | Crucible device |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106637410A (en) * | 2016-12-30 | 2017-05-10 | 珠海鼎泰芯源晶体有限公司 | Crucible device |
CN115558986A (en) * | 2022-11-14 | 2023-01-03 | 浙江晶越半导体有限公司 | Crucible for improving growth temperature uniformity of large-size silicon carbide seed crystal |
-
2016
- 2016-12-30 CN CN201621493497.6U patent/CN206521536U/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106637410A (en) * | 2016-12-30 | 2017-05-10 | 珠海鼎泰芯源晶体有限公司 | Crucible device |
CN106637410B (en) * | 2016-12-30 | 2019-03-26 | 珠海鼎泰芯源晶体有限公司 | Crucible device |
CN115558986A (en) * | 2022-11-14 | 2023-01-03 | 浙江晶越半导体有限公司 | Crucible for improving growth temperature uniformity of large-size silicon carbide seed crystal |
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