CN214572367U - Silicon carbide crystal growing device - Google Patents
Silicon carbide crystal growing device Download PDFInfo
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- CN214572367U CN214572367U CN202120870496.3U CN202120870496U CN214572367U CN 214572367 U CN214572367 U CN 214572367U CN 202120870496 U CN202120870496 U CN 202120870496U CN 214572367 U CN214572367 U CN 214572367U
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Abstract
The utility model discloses a silicon carbide crystal growing device, relating to the technical field of silicon carbide crystal preparation; the silicon carbide crystal growing device comprises a crucible body and a crucible cover; the crucible body is provided with an accommodating cavity and an opening communicated with the accommodating cavity, and the bottom of the accommodating cavity is used for placing carbon-silicon raw materials; uncovered department is located to the crucible lid, and is used for sealing uncovered, and one side that the internal surface of crucible lid is close to the bottom of crucible body is used for placing the seed crystal, and the cavity has been seted up to one side that the crucible lid deviates from the seed crystal, cavity and external intercommunication. This carborundum crystal growing device is through the cavity setting that covers at the crucible, can make the seed crystal growth face can form the radial temperature gradient that the low both sides temperature of middle part temperature is high to make the growth face form a protruding interface, the growth face is little protruding to be favorable to reducing the dislocation formation in the crystal, thereby can guarantee the quality of the carborundum crystal that prepares at last and obtain.
Description
Technical Field
The utility model relates to a silicon carbide crystal preparation technical field particularly, relates to a silicon carbide crystal growing device.
Background
The silicon carbide single crystal material has the characteristics of wide forbidden band, high thermal conductivity, high breakdown electric field, high radiation resistance and the like, so that the prepared semiconductor device can meet the requirements of high-power and strong-radiation devices at present, is an ideal substrate material for preparing high-temperature, high-frequency, high-power and radiation-resistant devices, and leaves the corner in the fields of hybrid electric vehicles, high-voltage power transmission, LED illumination, aerospace and the like, and the growing of high-quality SiC crystals is the basis for realizing the excellent performance of the SiC-based devices.
SiC crystals do not occur in nature and can only be obtained by synthetic methods. At present, the methods of silicon carbide single crystal mainly include physical vapor transport method, high temperature chemical vapor deposition method, liquid phase epitaxy method, etc. Of these, the physical vapor transport method is the most well developed and is adopted by most research institutes and companies worldwide. Physical vapor deposition (PVT) uses medium frequency induction heating and a high density graphite crucible as a heating element. The SiC powder is placed at the bottom of the graphite crucible, the SiC seed crystal is positioned at the top of the graphite crucible, and 4H-SiC is grown by generally adopting a C surface as a growth surface for crystal growth. The temperature of the SiC raw material area is higher by adjusting the heat insulation layer outside the crucible, and the temperature of the seed crystal covered on the top crucible is lower. Then directly subliming the silicon carbide powder into Si and Si at a temperature above 2100 ℃ and under a low-pressure environment2C、SiC2The gas is mixed, and the mixture is transported from the high-temperature area to the seed crystal of the lower-temperature area along the temperature gradient to deposit and crystallize into the silicon carbide single crystal.
However, in the prior art, defect dislocation is easily formed in the silicon carbide crystal in the process of preparing the silicon carbide crystal by using the crucible, and the quality of the silicon carbide crystal is seriously influenced.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a carborundum crystal growing apparatus that can reduce crystal defect dislocation formation effectively.
The embodiment of the utility model is realized like this:
the utility model provides a carborundum crystal growing apparatus, include:
the crucible comprises a crucible body, a crucible cover and a crucible cover, wherein the crucible body is provided with an accommodating cavity and an opening communicated with the accommodating cavity, and the bottom of the accommodating cavity is used for placing carbon-silicon raw materials;
the crucible cover is arranged at the opening and used for sealing the opening, one side, close to the bottom of the crucible body, of the inner surface of the crucible cover is used for placing seed crystals, one side, away from the seed crystals, of the crucible cover is provided with a cavity, and the cavity is communicated with the outside.
In an alternative embodiment, the cavity is opened at the middle position of one side of the crucible cover far away from the seed crystal and is arranged back to the middle position of the seed crystal.
In an optional embodiment, a first channel is formed in the side wall of the cavity, and the first channel is communicated with the cavity and the accommodating cavity.
In an optional embodiment, the number of the first passages is multiple, and the multiple first passages are circumferentially spaced along the circumferential direction of the inner side wall of the cavity.
In an optional embodiment, the crucible cover is further provided with a second channel, one end of the second channel is communicated with the outside, and the other end of the second channel is communicated with the accommodating cavity.
In an alternative embodiment, the number of second channels is plural, and the plural second channels are circumferentially spaced around the circumferential edge of the cavity.
In an optional embodiment, the number of the first channels corresponds to that of the second channels one to one, one end of each second channel is communicated with the outside, and the other end of each second channel is communicated with the first channel at the corresponding position so as to be communicated with the accommodating cavity through the first channel.
In an optional implementation mode, the bottom of the crucible body is provided with a plurality of graphite rings which are coaxially sleeved, a raw material placing area is formed between any two adjacent graphite rings, and each raw material placing area can be used for placing carbon and silicon raw materials.
In an optional embodiment, an annular graphite carbon felt is further arranged in the crucible body, and the annular graphite carbon felt is arranged between the outermost graphite ring and the inner side wall of the crucible body.
In an optional embodiment, the crucible body is further provided with an annular flow guide part, two ends of the annular flow guide part are provided with openings facing the seed crystal, and the inner diameter of the annular flow guide part is gradually reduced from the bottom to the top of the crucible body.
The embodiment of the utility model provides an at least possess following advantage or beneficial effect:
the embodiment of the utility model provides a silicon carbide crystal growing device, which comprises a crucible body and a crucible cover; the crucible body is provided with an accommodating cavity and an opening communicated with the accommodating cavity, and the bottom of the accommodating cavity is used for placing carbon-silicon raw materials; uncovered department is located to the crucible lid, and is used for sealing uncovered, and one side that the internal surface of crucible lid is close to the bottom of crucible body is used for placing the seed crystal, and the cavity has been seted up to one side that the crucible lid deviates from the seed crystal, cavity and external intercommunication. This carborundum crystal growing device is through the cavity setting that covers at the crucible, can make the seed crystal growth face can form the radial temperature gradient that the low both sides temperature of middle part temperature is high to make the growth face form a protruding interface, the growth face is little protruding to be favorable to reducing the dislocation formation in the crystal, thereby can guarantee the quality of the carborundum crystal that prepares at last and obtain.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a schematic structural view of a silicon carbide crystal growing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a silicon carbide crystal growing apparatus according to an embodiment of the present invention;
FIG. 3 is an exploded view of a silicon carbide crystal growing apparatus according to an embodiment of the present invention;
FIG. 4 is a schematic structural view of a crucible cover of a silicon carbide crystal growing apparatus according to an embodiment of the present invention;
fig. 5 is a schematic view of a partial structure of a silicon carbide crystal growth apparatus according to an embodiment of the present invention.
The figure is a 100-silicon carbide crystal growing apparatus; 101-a crucible body; 102-crucible cover; 103-a cap body; 105-an annular projection; 107-a containment chamber; 109-open mouth; 110-a cavity; 111-a first channel; 113-a second channel; 115-graphite ring; 117-feedstock placement zone; 119-graphite carbon felt; 121-annular flow guide; 123-opening; 125-seed crystal.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention, as generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the accompanying drawings, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate the position or positional relationship based on the position or positional relationship shown in the drawings, or the position or positional relationship which is usually placed when the product of the present invention is used, and are only for convenience of description and simplification of the description, but do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal", "vertical" and the like do not imply that the components are required to be absolutely horizontal or pendant, but rather may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the related art, defect dislocations are easily formed in the silicon carbide crystal during the preparation of the silicon carbide crystal by using the crucible, which seriously affects the quality of the silicon carbide crystal. In view of the above, the present embodiments provide a silicon carbide crystal growing apparatus that can effectively ensure the quality of a prepared crystal by reducing the formation of crystal defect dislocations using the arrangement of a cavity in a crucible cover. The structure and operation of the silicon carbide crystal growing apparatus will now be described in detail.
FIG. 1 is a schematic view of the structure of a silicon carbide crystal growing apparatus 100 according to this embodiment; FIG. 2 is a schematic cross-sectional view of a silicon carbide crystal growing apparatus 100 according to this embodiment; figure 3 is an exploded view of silicon carbide crystal growing apparatus 100 according to this embodiment. Referring to fig. 1 to 3, the present embodiment provides a silicon carbide crystal growing apparatus 100, which includes a crucible body 101 and a crucible cover 102.
In detail, the crucible body 101 has a cylindrical structure. And crucible body 101 holds chamber 107 and with hold the uncovered 109 of chamber 107 intercommunication, the bottom that holds chamber 107 is used for placing carbon silicon raw materials to make carbon silicon raw materials can sublime under the heating environment with upward flow, thereby guarantee the preparation efficiency of crystal. Meanwhile, the crucible cover 102 is substantially a disc-shaped structure, the crucible cover 102 is covered on the opening 109 and is used for closing the opening 109, the inner surface of the crucible cover 102 is used for placing the seed crystal 125 on the side close to the bottom of the crucible body 101, and the carbon-silicon raw material placed at the bottom of the accommodating cavity 107 can move towards the direction of the seed crystal 125 after being sublimated, so that a silicon carbide crystal is formed at the seed crystal 125. In addition, a cavity 110 is formed on the side of the crucible cover 102 away from the seed crystal 125, and the cavity 110 is communicated with the outside. Through the arrangement of the cavity 110, the growth surface of the seed crystal 125 can form a radial temperature gradient with low temperature in the middle and high temperature at two sides, so that the growth surface forms a convex interface, the micro-convex growth surface is beneficial to reducing the dislocation formation in the crystal, and the quality of the finally prepared silicon carbide crystal can be ensured.
The principle of the convex interface formation is as follows: because the axial temperature distribution in the crucible body 101 during the preparation of the silicon carbide crystal is such that the temperature at the top of the crucible, i.e., at the position of the seed crystal 125, is the lowest, the temperature at the center of the feedstock is the highest, and then at the bottom of the crucible. When the SiC crystal grows, the SiC raw material at the center of the raw material is decomposed first, the generated SiC gas phase substance diffuses toward a low temperature, that is, toward the seed crystal 125 and the bottom of the crucible, and when the SiC gas phase substance at the seed crystal 125 is larger than its saturated vapor pressure, crystal growth starts at the seed crystal 125. With a sufficient supply of SiC feedstock, the greater the difference in temperature between the top and bottom, i.e., the greater the axial gradient of the growth chamber, the greater the supersaturation of SiC gas phase species at the seed crystal 125 and the faster the crystal growth rate. Thus, the axial temperature gradient mainly affects the growth rate of the SiC crystal. Similarly, the radial temperature distribution in the crucible body 101 during the preparation of the silicon carbide crystal is such that a constant isothermal surface is formed on the crystal surface, and the temperature at the center is the lowest and the temperature at the edge is the highest on the same cross section of the crystal, so that the larger the difference between the center temperature and the edge temperature is, that is, the larger the radial temperature gradient of the crystal is, the more convex the crystal growth surface is, so that a radial temperature gradient with a lower middle temperature and higher temperatures at both sides can be formed by the arrangement of the cavity 110, and thus a convex interface is formed by the growth surface.
FIG. 4 is a schematic view of the structure of the crucible cover 102 of the crucible structure for silicon carbide crystals according to the present embodiment. Referring to fig. 1 to 4 again, in the present embodiment, the crucible lid 102 specifically includes a lid body 103 and an annular protrusion 105, the lid body 103 is a disc-shaped structure, the annular protrusion 105 is protruded at one side of the lid body 103, and the seed crystal 125 is disposed at an end surface of the annular protrusion 105. The cavity 110 is specifically opened at one end of the annular protrusion 105 departing from the seed crystal 125, and the cavity 110 is opened at the middle position of the annular protrusion 105 away from one side of the seed crystal 125 and is back to the middle position of the seed crystal 125, so that a radial temperature gradient with low middle temperature and high two-side temperature can be formed at the back of the seed crystal 125, a convex interface can be formed on the growth surface formed on the surface of the seed crystal 125, dislocation is reduced, and the crystal quality obtained by preparation is ensured.
Alternatively, since the holding cavity 107 in the crucible body 101 needs to be evacuated before the preparation in the physical vapor transport method, and then the inert gas and the doping gas are charged, a pressure difference exists between the inside of the crucible body 101 and the outside of the crucible body 101 because the crucible is in a sealed state during the evacuation, and thus an abnormal phenomenon that the crucible cover 102 at the top of the crucible body 101 pops open is easily generated during the evacuation. Therefore, in the present embodiment, the sidewall of the cavity 110 is opened with a first channel 111, and the first channel 111 connects the cavity 110 and the accommodating chamber 107. Set up through first passageway 111 can balance the interior outer pressure differential of crucible body 101, avoid crucible cover 102 bounce, and through the setting of first passageway 111, can also make the growth atmosphere can release the heat through first passageway 111 when seed crystal 125 growth face condensation deposition, thereby be favorable to through the unnecessary heat of first passageway 111 discharge, avoid the too high emergence that leads to many types of growth face temperature, and then can be favorable to further forming a little protruding growth interface of seed crystal 125, then can also further reduce the formation of dislocation.
It should be noted that, in the present embodiment, the number of the first passages 111 is plural, and the plural first passages 111 are circumferentially spaced apart along the circumferential direction of the inner side wall of the cavity 110. Meanwhile, each first passage 111 is arranged to extend in a horizontal direction, i.e., to open vertically in a direction from the side wall of the cavity 110 toward the side wall of the crucible body 101, to communicate the accommodating chamber 107 with the outside. Through the arrangement of the first channels 111 which are annularly arranged, the accommodating cavity 107 can be sufficiently communicated with the outside, the crucible cover 102 is prevented from popping up in the vacuumizing process of the crucible body 101, and the excessive heat of the crucible body 101 in the silicon carbide crystal preparation process can be discharged, so that the occurrence of multiple types caused by overhigh temperature of the growth surface is avoided, and the quality of the prepared crystal is ensured.
Referring to fig. 1 to 4 again, in the present embodiment, the cover body 103 of the crucible cover 102 further has a second channel 113, one end of the second channel 113 is connected to the outside, and the other end extends to the annular protrusion 105 and is connected to the accommodating cavity 107. Through the setting of second passageway 113, can further balance the internal and external pressure difference of crucible body 101 when the chamber evacuation, avoid jumping out crucible cover 102 in the evacuation process, also can be when the crystal grows simultaneously for growth atmosphere can be at the condensation of seed crystal 125 growth face and through the heat release of second passageway 113, reduces the probability that many types changed.
As an optional scheme, the number of the second channels 113 is multiple, and the multiple second channels 113 are circumferentially spaced around the circumferential edge of the cavity 110, similar to the multiple first channels 111, the arrangement of the multiple second channels 113 fully ensures that the pressure difference between the inside and the outside of the crucible body 101 can be balanced, and simultaneously fully ensures that the redundant heat in the crucible body 101 is dissipated, thereby ensuring the quality of the prepared crystal.
Further optionally, in this embodiment, the number of the first channels 111 corresponds to that of the second channels 113, one end of each second channel 113 is communicated with the outside, and the other end of each second channel 113 is communicated with the first channel 111 at the corresponding position to communicate with the accommodating cavity 107 through the first channel 111. That is, in this embodiment, each second channel 113 is communicated with one first channel 111, and then is communicated with the containing cavity 107 through the first channel 111, which not only facilitates the processing and manufacturing of the crucible cover 102, but also effectively ensures that the first channel 111 and the second channel 113 can be communicated with the containing cavity 107 between the outside and the inside of the crucible body 101, thereby fully ensuring that the pressure difference between the inside and the outside of the crucible body 101 can be balanced, and simultaneously fully ensuring that the excessive heat in the crucible body 101 is dissipated, thereby ensuring the quality of the prepared crystal.
It should be noted that, in the prior art, in the current process for preparing silicon carbide crystals, the raw material level is relatively single in shape and basically flatly laid on the bottom of the crucible body 101, and because the powder is relatively loose, the raw material level is easily inclined due to collision and crucible inclination during transportation and charging, which requires operators to be familiar with and consciously avoid the situation, if the situation occurs, the raw material inclination can be timely identified and then re-charged, if the situation does not occur, the charging is continued, after sintering is finished, the raw material is condensed with the crucible wall, and the raw material level cannot reach the process standard, so that the crucible and the raw material are discarded. Meanwhile, in PVT, the crucible body 101 is made to be a heating body by adopting a vortex heating method, so that the temperatures of the side wall and the bottom of the raw material area are much higher than the temperature of the middle of the raw material in the crystal growth process, the heat conductivity of powder is poor, the raw materials at the periphery and the bottom of the raw material area are graphitized most seriously in the actual production, the generated graphite particles and the carbon-rich particles are not sintered together and are connected with each other loosely, and the silicon carbide raw materials from the middle part to the top are condensed together to form ceramic bodies with compact structures and cone shapes, and the ceramic bodies are usually directly abandoned after the crystal growth is finished, so that the silicon carbide raw materials are wasted, and the yield of single-furnace silicon carbide crystals is also limited. The general method for increasing the thickness of the crystal is to simply prolong the growth time, but the growth interface changes along with the increase of the thickness, and the ratio of carbon to silicon and the pressure in the atmosphere of raw material sublimation in the later growth stage are seriously disordered, so that the quality of the grown crystal cannot be ensured. In addition, in the current crystal growth process, basically, raw materials are sintered first, then the furnace is removed for inspection, and the seed crystal 125 is placed to start crystal growth, which means that a furnace of raw materials is sintered before a furnace of crystal growth, the time of a machine needed by the sintering process of the raw materials for the furnace is longer, the growth utilization rate of the machine is reduced, and the production cost of the crystal is increased by the depreciation of the machine.
Therefore, based on the above-mentioned defects of the prior art, fig. 5 is a schematic partial structure diagram of the silicon carbide crystal growing apparatus 100 provided in this embodiment. Referring to fig. 1 to 3 and 5, in an embodiment of the present invention, a plurality of graphite rings 115 sleeved with a coaxial line are disposed at the bottom of the crucible body 101, a raw material placing region 117 is formed between any two adjacent graphite rings 115, and each raw material placing region 117 can be used for placing carbon-silicon raw materials. Through the arrangement of the graphite rings 115, the raw material sintering process can be carried out simultaneously for multiple times during the raw material sintering process, only the raw material cylinders for multiple times are required to be loaded into the crucible for the sintering process, and after the sintering process is finished, the raw material cylinders are taken out for inspection and then put into different furnaces (other machines) for crystal growth, so that the growth utilization rate of the machines can be greatly improved, and the production cost of crystals is reduced; although the raw material cylinder is made of graphite, the raw material cylinder is located in a high-temperature region during the growth process, and the graphite ring 115 is not corroded (the corrosion is less and can be ignored) by the silicon carbide atmosphere in the high-temperature region, so that the raw material cylinder can be reused. Simultaneously, can also be through graphite still self highly can freely control the height of packing of raw materials for the raw materials height reaches the technological requirement, and the coefficient of heat conductivity of graphite spare can be much higher than the carborundum powder, is favorable to in time leading-in raw materials middle part with the heat that the lateral wall of crucible body 101 produced, and it is inhomogeneous to improve the raw materials and be heated, the problem that the raw materials utilization ratio is low.
In addition, in the embodiment of the present invention, an annular graphite carbon felt 119 is further disposed in the crucible body 101, and the annular graphite carbon felt 119 is disposed between the outermost graphite ring 115 and the inner side wall of the crucible body 101. Through graphite carbon felt 119's setting, can keep apart crucible body 101's lateral wall to the heat-conduction of raw materials fully, avoid the raw materials phenomenon of sublimating all around first, make the raw materials bottom start sublimating first, change into the sublimating carbonization from bottom to top with the mode of raw materials outside-in sublimating carbonization, firstly, avoid the raw materials loose carbon particle of carbonizing all around first to be blown up by the growth atmosphere, get into crystal formation carbon package along with the growth atmosphere is taken to the growth interface, secondly, the raw materials district also has temperature gradient in the axial, can be at raw materials surface condensation crystallization after the sublimating carbonization from bottom to top, these crystal particles are natural carbon particle protective screen, can effectively avoid carbon particle to be blown up by the growth atmosphere, thereby can guarantee the preparation efficiency and the quality of silicon carbide crystal.
Referring to fig. 2 and fig. 3 again, in the present embodiment, the crucible body 101 is further provided with a ring-shaped flow guiding member, two ends of the ring-shaped flow guiding member are provided with openings 123 facing the seed crystal 125, and the inner diameter of the ring-shaped flow guiding member is gradually reduced in the direction from the bottom to the top of the crucible body 101. The setting through annular water conservancy diversion piece 121 can carry out the water conservancy diversion to the atmosphere after the sublimation, guarantees that it can upwards flow to seed crystal 125 position department to can guarantee the preparation efficiency and the quality of crystal.
The working principle and the beneficial effects of the silicon carbide crystal growing apparatus 100 provided by the embodiment of the present invention are explained in detail as follows:
when the silicon carbide crystal growth device 100 is used for preparing the silicon carbide crystal, 2-10 heats of sintering raw material cylinders can be placed in the same crucible and then placed in a machine table for a sintering process, after the sintering process is finished and sintering detection is finished, the raw material cylinders of each heat are placed in corresponding growth crucibles, finally, a crucible cover 102 with a seed crystal 125 bonded is sealed with a crucible body 101 with a thermal field placed inside, a graphite carbon felt 119 with the thickness of 5-10 mm and the thickness of 1-4 layers is wrapped around the growth crucibles to serve as a heat insulation layer, then the growth crucibles are placed in a growth furnace, and the growth furnace is firstly vacuumized to the pressure of 5x10-2Below mbar, argon is filled to control the pressure to be 1-50 mbar, and a water-cooled induction coil is electrified to use the electromagnetic induction principleHeating graphite crucible to 2100 deg.C or higher to sublimate silicon carbide powder into Si and Si2C、SiC2And the gas is subjected to deposition crystallization along the temperature gradient from the high-temperature region to the seed crystal 125 in the lower-temperature region to form the silicon carbide single crystal, and the growth of the silicon carbide single crystal is completed after the deposition crystallization time of 5-10 days.
The silicon carbide crystal growing device 100 can sinter a plurality of raw materials for a time, improve the utilization rate of a machine by 1 to 10 percent, and reduce the production cost of crystals for each time by 5 to 20 percent; the raw material barrel thermal field structure is adopted to grow 4-inch N-doped 4H-SiC crystals, the crystals are single crystal type 4H, and the surfaces of the crystals have no macroscopic defects such as mixed crystals, dense microtubes and the like. The crystal is cut, ground and polished to obtain a wafer, the crystal is placed under an optical microscope for observation, the SiC crystal is basically free of wrappage, and the density of the wrappage is less than 1 piece/cm2Etching the substrate with KOH solution and calculating the defect density, wherein the defect density is consistent with that of the crystal produced in the same period, and the TSD is less than 500cm-2，BPD＜8000cm-2The raw material barrel thermal field structure is used for crystal growth, so that the growth utilization rate of a machine can be improved on the premise of not influencing the crystal quality, the production cost is reduced, the raw material utilization rate is improved, and the raw material sintering operation is facilitated.
In summary, embodiments of the present invention provide a silicon carbide crystal growing apparatus 100 that effectively reduces the formation of crystal defect dislocations.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. An apparatus for growing a silicon carbide crystal, comprising:
the crucible comprises a crucible body, a crucible cover and a crucible cover, wherein the crucible body is provided with an accommodating cavity and an opening communicated with the accommodating cavity, and the bottom of the accommodating cavity is used for placing carbon-silicon raw materials;
the crucible cover is arranged at the opening and is used for sealing the opening, the inner surface of the crucible cover is close to one side of the bottom of the crucible body and is used for placing seed crystals, the crucible cover deviates from one side of the seed crystals, and a cavity is formed in the one side of the seed crystals and is communicated with the outside.
2. A silicon carbide crystal growth apparatus according to claim 1 wherein:
the cavity is arranged in the middle position of one side, far away from the seed crystal, of the crucible cover and is arranged back to the middle position of the seed crystal.
3. A silicon carbide crystal growth apparatus according to claim 1 wherein:
a first channel is formed in the side wall of the cavity and communicated with the cavity and the accommodating cavity.
4. A silicon carbide crystal growing apparatus according to claim 3 wherein:
the number of the first channels is multiple, and the first channels are arranged at intervals along the circumferential direction of the inner side wall of the cavity.
5. A silicon carbide crystal growth apparatus according to claim 4 wherein:
and a second channel is also formed in the crucible cover, one end of the second channel is communicated with the outside, and the other end of the second channel is communicated with the containing cavity.
6. A silicon carbide crystal growth apparatus according to claim 5 wherein:
the number of the second channels is multiple, and the second channels are arranged around the circumferential edge of the cavity at intervals.
7. The silicon carbide crystal growing apparatus of claim 6, wherein:
the first channels correspond to the second channels in number one to one, one end of each second channel is communicated with the outside, and the other end of each second channel is communicated with the corresponding first channel so as to be communicated with the containing cavity through the first channels.
8. A silicon carbide crystal growth apparatus according to any one of claims 1 to 7 wherein:
the bottom of crucible body is equipped with the graphite ring that a plurality of coaxial line covers were established, arbitrary adjacent two form a raw materials between the graphite ring and place the district, every the raw materials is placed and is all can be used for placing the carbon silicon raw materials in the district.
9. A silicon carbide crystal growing apparatus according to claim 8 wherein:
the crucible is characterized in that an annular graphite carbon felt is further arranged in the crucible body and arranged between the graphite ring on the outermost side and the inner side wall of the crucible body.
10. A silicon carbide crystal growth apparatus according to any one of claims 1 to 7 wherein:
the crucible is characterized in that an annular flow guide part is further arranged in the crucible body, openings opposite to the seed crystals are formed in two ends of the annular flow guide part, the annular flow guide part is arranged in the direction from the bottom of the crucible body to the top of the crucible body, and the inner diameter of the annular flow guide part is gradually reduced.
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| CN113862789A (en) * | 2021-12-01 | 2021-12-31 | 浙江大学杭州国际科创中心 | Crucible structure, device and method for preparing p-type 4H-SiC single crystal |
| CN114108095A (en) * | 2021-11-30 | 2022-03-01 | 江苏集芯半导体硅材料研究院有限公司 | Single crystal silicon carbide preparation device |
| CN115125613A (en) * | 2022-06-17 | 2022-09-30 | 江苏集芯半导体硅材料研究院有限公司 | Growth device for preparing single crystal silicon carbide |
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| CN114108095A (en) * | 2021-11-30 | 2022-03-01 | 江苏集芯半导体硅材料研究院有限公司 | Single crystal silicon carbide preparation device |
| CN114108095B (en) * | 2021-11-30 | 2023-02-14 | 江苏集芯半导体硅材料研究院有限公司 | Single crystal silicon carbide preparation device |
| CN113862789A (en) * | 2021-12-01 | 2021-12-31 | 浙江大学杭州国际科创中心 | Crucible structure, device and method for preparing p-type 4H-SiC single crystal |
| CN113862789B (en) * | 2021-12-01 | 2022-03-11 | 浙江大学杭州国际科创中心 | Crucible structure, device and method for preparing p-type 4H-SiC single crystal |
| CN115125613A (en) * | 2022-06-17 | 2022-09-30 | 江苏集芯半导体硅材料研究院有限公司 | Growth device for preparing single crystal silicon carbide |
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| CN115182037A (en) * | 2022-07-08 | 2022-10-14 | 安徽微芯长江半导体材料有限公司 | Device for modulating growth surface type of silicon carbide crystal |
| CN116988144A (en) * | 2023-08-16 | 2023-11-03 | 浙江晶越半导体有限公司 | Method for reducing dislocation in silicon carbide single crystal and improving growth efficiency |
| CN118272918A (en) * | 2024-06-04 | 2024-07-02 | 苏州优晶半导体科技股份有限公司 | Silicon carbide crystal growth furnace and silicon carbide crystal growth method |
| CN118272918B (en) * | 2024-06-04 | 2024-10-11 | 苏州优晶半导体科技股份有限公司 | Silicon carbide crystal growth furnace and silicon carbide crystal growth method |
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Effective date of registration: 20240228 Address after: 410000 No. 399, Changxing Road, high tech Development Zone, Changsha, Hunan Province Patentee after: Hunan San'an Semiconductor Co.,Ltd. Country or region after: China Address before: 362200 Jiangpu community enterprise operation center building, Chendai Town, Jinjiang City, Quanzhou City, Fujian Province Patentee before: FUJIAN NORSTEL MATERIAL TECHNOLOGIES Co.,Ltd. Country or region before: China |