CN206497895U

CN206497895U - bridge rectifier diode

Info

Publication number: CN206497895U
Application number: CN201621469010.0U
Authority: CN
Inventors: 崔峰敏
Original assignee: OD TECH SEMICONDUCTORS (NANJING) Co Ltd
Current assignee: OD TECH SEMICONDUCTORS (NANJING) Co Ltd
Priority date: 2016-12-29
Filing date: 2016-12-29
Publication date: 2017-09-15
Anticipated expiration: 2026-12-29

Abstract

A kind of bridge rectifier diode, silicon wafer sizes are 5.6mm × 5.6mm, active area dimensions 4.72mm × 4.72mm, low-doped N-type silicon substrate is provided with highly doped P-type silicon basic unit, highly doped N-type silicon diffusion layer and highly doped P-type silicon basic ring, and the highly doped P-type silicon basic ring is located between highly doped P-type silicon basic unit and highly doped N-type silicon diffusion layer；Low-doped N-type silicon substrate and highly doped P-type silicon basic unit form PN junction；The rounded rectangular-shape of low-doped N-type silicon substrate, the backside deposition metal Ag or Ni of N-type silicon substrate is provided with graphene layer as negative electrode, the N-type silicon substrate, highly doped P-type silicon basic unit, highly doped N-type silicon diffusion layer and highly doped P-type silicon basic ring；Deposited metal Al is used as anode on highly doped P-type silicon basic unit, highly doped N-type silicon diffusion layer and graphene layer；Cathodic metal electrode and anode metal electrodes are externally provided with diaphragm.Diode reverse breakdown voltage of the present utility model is high, and forward current is high.

Description

Bridge rectifier diode

Technical field

The utility model is related to semiconductor power device, more particularly to a kind of bridge rectifier diode.

Background technology

One-way conduction performance based on diode, carries out bridge rectifier using diode, alternating current can be converted into direct current Electricity, but selected as the commutation diode of rectifier cell, it is necessary to carry out different commutation diodes for rectifier system, load Select, if selection is improper, can cause to be unable to trouble free service, in some instances it may even be possible to because diode has been burnt in high-voltage breakdown；Or material greatly is small With cause waste.High-tension electricity transport can reduce the loss of voltage, to realize the rectification under high-tension electricity, it is necessary to which a kind of be resistant to height The high commutation diode of pressure, breakdown voltage.

The content of the invention

The purpose of this utility model is to provide a kind of bridge rectifier diode, and its breakdown reverse voltage is high, forward current It is high.

To realize above-mentioned technical purpose, the utility model is adopted the following technical scheme that：

A kind of bridge rectifier diode, silicon wafer sizes be 5.6mm × 5.6mm, active area dimensions 4.72mm × 4.72mm, Low-doped N-type silicon substrate is provided with highly doped P-type silicon basic unit, highly doped N-type silicon diffusion layer and highly doped P-type silicon base Ring, the highly doped P-type silicon basic ring is located between highly doped P-type silicon basic unit and highly doped N-type silicon diffusion layer；It is low-doped N-type silicon substrate and highly doped P-type silicon basic unit form PN junction；The rounded rectangular-shape of low-doped N-type silicon substrate, N The backside deposition metal Ag or Ni of type silicon substrate is the N-type silicon substrate, highly doped P-type silicon basic unit, highly doped as negative electrode N-type silicon diffusion layer and highly doped P-type silicon basic ring are provided with graphene layer；Highly doped P-type silicon basic unit, highly doped N-type silicon Deposited metal Al is used as anode on diffusion layer and graphene layer；Cathodic metal electrode and anode metal electrodes are externally provided with diaphragm.

As further improvement of the utility model, 415 μm of the graphene slice width.

As further improvement of the utility model, the highly doped P-type silicon basic ring has three, the N-type silicon substrate On have four loop configuration, loop configuration curvature is 500 μm；Four loop configuration outer shrouds are highly doped N-type silicon diffusion layer, with And three highly doped P-type silicon basic rings in the middle of highly doped P-type silicon basic unit and the highly doped N-type silicon diffusion layer of outer shroud, from outer The first silicon substrate ring, the second silicon substrate ring and the 3rd silicon substrate ring are followed successively by interior.

As further improvement of the utility model, the highly doped N-type silicon emission layer width of the outer shroud is 55 μm, three The width of silicon substrate ring is 15 μm；The highly doped N-type silicon emission layer of outer shroud, the first silicon substrate ring, the second silicon substrate ring, the 3rd silicon substrate ring, Lateral separation is followed successively by 109 μm, 82 μm, 77 μm, 72 μm between highly doped P-type silicon basic unit.

As further improvement of the utility model, the bridge rectifier diode silicon wafer thickness is 290 μm, the height The P-type silicon basic unit of doping and highly doped P-type silicon basic ring depth are 150 μm, and the highly doped N-type silicon diffusion layer depth is 25 μm。

As further improvement of the utility model, the low-doped N-type silicon substrate resistivity is 100 Ω cm, thick 140 μm of degree.

As further improvement of the utility model, the thickness of the anode metal Al is 4 μm, the cathodic metal Ag or Ni thickness is 0.5 μm.

Bridge rectifier diode of the present utility model, breakdown reverse voltage is high, the maximum that can be born up to 1840V, forward direction Electric current is high, up to 50A, it is adaptable to bridge rectifier.

Brief description of the drawings

Fig. 1 and 2 is the chip plane structural representation of the utility model embodiment.

Embodiment

Bridge rectifier diode as shown in Figure 1 and Figure 2, including diaphragm 1, highly doped N-type silicon diffusion layer 2, anode gold Belong to Al layers 3, graphene layer 4, highly doped P-type silicon basic unit 5, low-doped N-type silicon substrate 6, the highly doped and of P-type silicon basic ring 7 Cathode metal layer 8；Silicon wafer sizes are 5.6mm × 5.6mm, active area dimensions 4.72mm × 4.72mm, low-doped N-type silicon lining Bottom 6 is provided with highly doped P-type silicon basic unit 5, highly doped N-type silicon diffusion layer 2 and highly doped P-type silicon basic ring 7, described highly doped Miscellaneous P-type silicon basic ring 7 is located between highly doped P-type silicon basic unit 5 and highly doped N-type silicon diffusion layer 2；Low-doped N-type silicon Substrate 6 and highly doped P-type silicon basic unit 5 form PN junction；The low-doped rounded rectangular-shape of N-type silicon substrate 6, N-type silicon The backside deposition metal Ag or Ni of substrate 6 is the N-type silicon substrate 6, highly doped P-type silicon basic unit 5, highly doped as negative electrode 8 N-type silicon diffusion layer 2 and highly doped P-type silicon basic ring 7 are provided with wide 415 μm of graphene layer 4；Highly doped P-type silicon basic unit 5, Deposited metal Al is used as anode 3 on highly doped N-type silicon diffusion layer 2 and graphene layer 4；Cathodic metal electrode 8 and anode metal Electrode 3 is externally provided with diaphragm 1.

The highly doped P-type silicon basic ring 7, which has in three, the N-type silicon substrate 6, four loop configuration, loop configuration Curvature is 500 μm；Four loop configuration outer shrouds are highly doped N-type silicon diffusion layer 2, and highly doped P-type silicon basic unit 5 and outer Three highly doped P-type silicon basic rings 7 in the middle of the highly doped N-type silicon diffusion layer 2 of ring, are followed successively by the first silicon substrate ring from outside to inside 71, the second silicon substrate ring 72 and the 3rd silicon substrate ring 73.

The highly doped width of N-type silicon emission layer 2 of the outer shroud is 55 μm, and the width of three silicon substrate rings 71,72,73 is 15 μ m；The highly doped N-type silicon emission layer 2 of outer shroud, the first silicon substrate ring 71, the second silicon substrate ring 72, the 3rd silicon substrate ring 73, highly doped p-type 5 lateral separations of silicon base layer are followed successively by 109 μm, 82 μm, 77 μm, 72 μm.

The bridge rectifier diode silicon wafer thickness is 290 μm, the highly doped P-type silicon basic unit 5 and highly doped P The depth of type silicon substrate ring 7 is 150 μm, and the highly doped depth of N-type silicon diffusion layer 2 is 25 μm.

The low-doped resistivity of N-type silicon substrate 6 is 100 Ω cm, 140 μm of thickness.

The thickness of the metal Al of anode 3 is 4 μm, and the thickness of negative electrode 8 the metal Ag or Ni are 0.5 μm

The bridge rectifier diode breakdown reverse voltage BVR=1600V of the present embodiment（Typ.1840V）, forward current IF= 50A, operation and reserve temperature range -55 ~+150 DEG C.

Claims

1. a kind of bridge rectifier diode, silicon wafer sizes are 5.6mm × 5.6mm, active area dimensions 4.72mm × 4.72mm, low The N-type silicon substrate of doping is provided with highly doped P-type silicon basic unit, highly doped N-type silicon diffusion layer and highly doped P-type silicon base Ring, the highly doped P-type silicon basic ring is located between highly doped P-type silicon basic unit and highly doped N-type silicon diffusion layer；It is low-doped N-type silicon substrate and highly doped P-type silicon basic unit form PN junction；The rounded rectangular-shape of low-doped N-type silicon substrate, N Backside deposition the metal Ag or Ni of type silicon substrate are used as negative electrode, it is characterised in that the N-type silicon substrate, highly doped P-type silicon base Layer, highly doped N-type silicon diffusion layer and highly doped P-type silicon basic ring are provided with graphene layer；Highly doped P-type silicon basic unit, height Deposited metal Al is used as anode on the N-type silicon diffusion layer and graphene layer of doping；Outside cathodic metal electrode and anode metal electrodes Provided with diaphragm.

2. bridge rectifier diode according to claim 1, it is characterised in that 415 μm of the graphene slice width.

3. bridge rectifier diode according to claim 1, it is characterised in that the highly doped P-type silicon basic ring has three It is individual, there are four loop configuration in the N-type silicon substrate, loop configuration curvature is 500 μm；Four loop configuration outer shrouds are highly doped N-type silicon diffusion layer, and three in the middle of highly doped P-type silicon basic unit and the highly doped N-type silicon diffusion layer of outer shroud are highly doped P-type silicon basic ring, the first silicon substrate ring, the second silicon substrate ring and the 3rd silicon substrate ring are followed successively by from outside to inside.

4. bridge rectifier diode according to claim 3, it is characterised in that the highly doped N-type silicon transmitting of the outer shroud Slice width degree is 55 μm, and the width of three silicon substrate rings is 15 μm；The highly doped N-type silicon emission layer of outer shroud, the first silicon substrate ring, the second silicon Lateral separation is followed successively by 109 μm, 82 μm, 77 μm, 72 μm between basic ring, the 3rd silicon substrate ring, highly doped P-type silicon basic unit.

5. bridge rectifier diode according to claim 1, it is characterised in that the bridge rectifier diode silicon wafer is thick Spend for 290 μm, the highly doped P-type silicon basic unit and highly doped P-type silicon basic ring depth are 150 μm, the highly doped N-type Silicon diffusion layer depth is 25 μm.

6. bridge rectifier diode according to claim 1, it is characterised in that the low-doped N-type silicon substrate resistance Rate is 100 Ω cm, 140 μm of thickness.

7. bridge rectifier diode according to claim 1, it is characterised in that the thickness of the anode metal Al is 4 μm, The thickness of the cathodic metal Ag or Ni is 0.5 μm.