CN206432233U - 刻蚀机的下电极载片台 - Google Patents
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Abstract
本实用新型提供一种刻蚀机的下电极载片台包括上载台和下载台,两者相互连接,其中,上载台用于放置晶圆,上载台的下表面开有冷却液循环槽,上载台的上表面设有冷却气体分流槽和冷却气体出气孔,下载台中心设有通孔以与刻蚀机的顶针机构匹配安装,具有冷却液入口、冷却液出口和冷却气体进气孔,冷却液入口和冷却液出口均与冷却液循环槽相连通,在对下电极进行冷却时,冷却液从下载台的冷却液入口进入上载台的冷却液循环槽内,而后从下载台的冷却液出口流出,对上载台表面的晶圆进行冷却时,冷却气体从下载台的冷却气体进气孔进入,从上载台的冷却气体出气孔通过,并向冷却气体分流槽内扩散。
Description
技术领域
本实用新型涉及半导体技术领域,具体涉及刻蚀机的下电极载片台。
背景技术
在等离子体刻蚀工艺中所使用的下电极载片台是一种固定待刻蚀晶圆的结构,合适的固定结构,对于等离子体刻蚀工艺的可靠性、稳定性和重复性有重要的作用。在选择晶圆固定结构时,需要考虑刻蚀晶圆的尺寸,刻蚀工艺的气体及流量分布,该固定结构使用材料对于刻蚀工艺过程的物理和化学影响,以及刻蚀工艺过程产生的热效应等因素。对于具有射频或者直流偏压的工艺结构,在选择固定结构时,还应考虑电极对载片台的电磁场分布作用的影响。
为了实现等离子体刻蚀工艺,要求下电极对晶圆具有吸附能力,同时对刻蚀过程产生的热量有冷却的功能。现有技术中,载片台通常采用的是铝合金阳极氧化,具有氦气体冷却和水冷结构。这种载片台结构复杂,不易安装维护。并且,当冷却水的温度较低时,容易在载片台外部或下电极周围凝结水珠或者反应聚合物,导致刻蚀速率降低,从而影响刻蚀工艺的均匀性和稳定性。
实用新型内容
本实用新型旨在提供一种刻蚀机的下电极载片台,以提高等离子体刻蚀工艺技术的稳定性、均匀性和重复性。
本实用新型的刻蚀机的下电极载片台包括上载台和下载台,两者相互连接,其中,所述上载台用于放置晶圆,所述上载台的下表面开有冷却液循环槽,所述上载台的上表面设有冷却气体分流槽和冷却气体出气孔,所述下载台中心设有通孔以与刻蚀机的顶针机构匹配安装,具有冷却液入口、冷却液出口和冷却气体进气孔,所述冷却液入口和所述冷却液出口均与所述冷却液循环槽相连通,在对下电极进行冷却时,冷却液从所述下载台的冷却液入口进入所述上载台的冷却液循环槽内,而后从所述下载台的冷却液出口流出,对所述上载台表面的晶圆进行冷却时,冷却气体从所述下载台的冷却气体进气孔进入,从所述上载台的冷却气体出气孔通过,并向所述冷却气体分流槽内扩散。
优选为,所述冷却气体分流槽为多个同心环形槽,并且通过径向槽相互连通。
优选为,所述冷却气体出气孔呈环形分布。
优选为,所述冷却气体出气孔位于所述冷却气体分流槽的最内侧的环形槽上。
优选为,所述冷却气体出气孔均匀分布。
优选为,在所述上载台的所述上表面的边缘区域设置有晶圆止滑区。
优选为,所述晶圆止滑区包括环形下沉台阶和粘性薄膜,所述环形下沉台阶位于所述上载台的上表面的边缘,所述粘性薄膜配置于所述环形台阶上,所述粘性薄膜的厚度与所述环形下沉台阶的高度相同。
优选为,所述环形下沉台阶的宽度为5~10mm,高度为0.1~0.3mm。
优选为,所述粘性薄膜为聚酰亚胺薄膜。
优选为,所述上载台与所述下载台通过螺栓紧固连接。
本实用新型的刻蚀机的下电极载片台具有良好的晶片吸附能力,同时对刻蚀过程产生的热量有显著冷却功能。结构简单、易于实施、成本低且效果显著。
附图说明
为了更清楚地说明本实用新型具体实施方式或现有技术中的技术方案,下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图是本实用新型的一些实施方式,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1是刻蚀机的下电极载片台的立体结构示意图。
图2是刻蚀机的下电极载片台的上载台的仰视图。
图3是刻蚀机的下电极载片台的上载台的俯视图。
图4是刻蚀机的下电极载片台的下载台的立体结构示意图。
图5是刻蚀机的下电极载片台的上载台的另一实施方式的俯视图。
图中:
1~上载台;2~下载台;11~冷却液循环槽;12~冷却气体分流槽;13~冷却气体出气孔;14~晶圆止滑区;21~通孔;22~冷却液入口;23~冷却液出口;24~冷却气体进气孔。
具体实施方式
为了使本实用新型的目的、技术方案及优点更加清楚明白,下面将结合本实用新型实施例中的附图,对本实用新型实施例中的技术方案进行清楚、完整地描述,应当理解,此处所描述的具体实施例仅用以解释本实用新型,并不用于限定本实用新型。所描述的实施例仅仅是本实用新型一部分实施例,而不是全部的实施例。基于本实用新型中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例,都属于本实用新型保护的范围。
在本实用新型的描述中,需要理解的是,术语“上”、“下”、“中心”、“边缘”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本实用新型和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本实用新型的限制。
在本实用新型的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本实用新型中的具体含义。
图1是刻蚀机的下电极载片台的立体结构示意图。如图1所示,本实用新型的刻蚀机的下电极载片台包括上载台1和下载台2,上载台1和下载台2通过螺栓紧固连接。
上载台1用于放置晶圆。在上载台1的下表面开有冷却液循环槽11,图2中示出了上载台的仰视图。如图2所示,冷却液循环槽11几乎遍布上载台的下表面,从而增大冷却面积,提高冷却效果。图3是上载台的俯视图。如图3所示,上载台1的上表面设有冷却气体分流槽12和冷却气体出气孔13。优选地,冷却气体分流槽12为多个同心环形槽,并且通过径向槽相互连通。冷却气体出气孔13均匀分布,且呈环形。在图3所示的本实用新型的具体的一例中,冷却气体分流槽12包括三组,每组包括1个环形槽以及6个径向槽。冷却气体出气孔13位于冷却气体分流槽12的最内侧的环形槽上。但是本实用新型不限定于此,冷却气体分流槽的数量、形状,冷却气体出气孔数量、形状等可以根据实际需求进行适应性调整。此外,冷却气体出气孔也可以不位于环形槽上而是通过径向槽与环形槽相连通等。只要能够使冷却气体通过冷却气体出气孔及冷却气体分流槽扩散到上载台的上表面,对放置在上载台上表面的晶圆进行冷却即可。
图4是下载台的立体结构示意图。如图4所示,下载台2中心设有通孔21以便与刻蚀机的顶针机构匹配安装。下载台2具有冷却液入口22、冷却液出口23和冷却气体进气孔24,冷却液入口22和冷却液出口23均与冷却液循环槽11相连通。在对下电极进行冷却时,冷却液从下载台2冷却液入口22进入上载台1的冷却液循环槽11内,而后从下载台2的冷却液出口23流出。对上载台1上表面的晶圆进行冷却时,冷却气体从下载台2的冷却气体进气孔24进入,从上载台1的冷却气体出气孔13通过,并向冷却气体分流槽12内扩散。
为可有效降低晶圆在上载台表面的滑动,提高稳定性,在本实用新型的另一实施方式中,在上载台1的上表面的边缘区域设置了晶圆止滑区14,如图5所示。晶圆止滑区例如可以通过在上载台1的上表面边缘去除一圈材料,形成一个环形下沉台阶,之后在该环形下沉台阶表面形成一层粘性薄膜,例如聚酰亚胺薄膜等。优选地,粘性薄膜的厚度等同于去除材料的厚度,也即与环形下沉台阶的高度相同,从而使上载台1上表面仍呈平面。环形下沉台阶的宽度优选为5~10mm,高度优选为0.1~0.3mm。当然本实用新型不限定于此,例如也可以设置多个晶圆止滑区14,即,在上载台1的上表面去除多圈材料,形成多个环形下沉台阶,之后在环形下沉台阶表面形成一层粘性薄膜,例如聚酰亚胺薄膜等。此外,晶圆止滑区的形成方法也不限定于此,也可以是其他合适的方式。
本实用新型的刻蚀机的下电极载片台具有良好的晶圆吸附能力,同时对刻蚀过程产生的热量有显著冷却功能。结构简单、易于实施、成本低且效果显著。其应用于刻蚀机能够进一步提高等离子体刻蚀工艺技术的稳定性、均匀性和重复性。
以上所述,仅为本实用新型的具体实施方式,但本实用新型的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本实用新型揭露的技术范围内,可轻易想到的变化或替换,都应涵盖在本实用新型的保护范围之内。
Claims (10)
1.一种刻蚀机的下电极载片台,其特征在于,
包括上载台和下载台,两者相互连接,其中,所述上载台用于放置晶圆,所述上载台的下表面开有冷却液循环槽,所述上载台的上表面设有冷却气体分流槽和冷却气体出气孔,所述下载台中心设有通孔以与刻蚀机的顶针机构匹配安装,具有冷却液入口、冷却液出口和冷却气体进气孔,所述冷却液入口和所述冷却液出口均与所述冷却液循环槽相连通,
在对下电极进行冷却时,冷却液从所述下载台的冷却液入口进入所述上载台的冷却液循环槽内,而后从所述下载台的冷却液出口流出,
对所述上载台表面的晶圆进行冷却时,冷却气体从所述下载台的冷却气体进气孔进入,从所述上载台的冷却气体出气孔通过,并向所述冷却气体分流槽内扩散。
2.根据权利要求1所述的刻蚀机的下电极载片台,其特征在于,
所述冷却气体分流槽为多个同心环形槽,并且通过径向槽相互连通。
3.根据权利要求1所述的刻蚀机的下电极载片台,其特征在于,
所述冷却气体出气孔呈环形分布。
4.根据权利要求2所述的刻蚀机的下电极载片台,其特征在于,
所述冷却气体出气孔位于所述冷却气体分流槽的最内侧的环形槽上。
5.根据权利根据权利要求3或4所述的刻蚀机的下电极载片台,其特征在于,
所述冷却气体出气孔均匀分布。
6.根据权利要求1所述的刻蚀机的下电极载片台,其特征在于,
在所述上载台的上表面的边缘区域设置有晶圆止滑区。
7.根据权利要求6所述的刻蚀机的下电极载片台,其特征在于,
所述晶圆止滑区包括环形下沉台阶和粘性薄膜,所述环形下沉台阶位于所述上载台的上表面的边缘,所述粘性薄膜配置于所述环形台阶上,所述粘性薄膜的厚度与所述环形下沉台阶的高度相同。
8.根据权利要求7所述的刻蚀机的下电极载片台,其特征在于,
所述环形下沉台阶的宽度为5~10mm,高度为0.1~0.3mm。
9.根据权利要求7所述刻蚀机的下电极载片台,其特征在于,
所述粘性薄膜为聚酰亚胺薄膜。
10.根据权利要求1所述的刻蚀机的下电极载片台,其特征在于,
所述上载台与所述下载台通过螺栓紧固连接。
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WO2018133482A1 (zh) * | 2017-01-19 | 2018-07-26 | 江苏鲁汶仪器有限公司 | 刻蚀机的下电极载片台 |
CN109935541A (zh) * | 2019-03-13 | 2019-06-25 | 江苏鲁汶仪器有限公司 | 一种反应腔室 |
CN110867365A (zh) * | 2019-11-04 | 2020-03-06 | 北京北方华创微电子装备有限公司 | 等离子体系统 |
CN111106045A (zh) * | 2019-12-31 | 2020-05-05 | 中芯集成电路(宁波)有限公司 | 半导体结构及其加工方法、刻蚀机 |
CN112908908A (zh) * | 2021-01-29 | 2021-06-04 | 宁波江丰电子材料股份有限公司 | 一种晶圆托盘的背面结构及其加工方法 |
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US11469079B2 (en) * | 2017-03-14 | 2022-10-11 | Lam Research Corporation | Ultrahigh selective nitride etch to form FinFET devices |
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US5835334A (en) * | 1996-09-30 | 1998-11-10 | Lam Research | Variable high temperature chuck for high density plasma chemical vapor deposition |
JP3834466B2 (ja) * | 2000-10-30 | 2006-10-18 | 株式会社日立製作所 | 半導体製造装置の制御方法 |
CN102468205A (zh) * | 2010-11-18 | 2012-05-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 托盘及具有它的晶片处理设备 |
CN103377868A (zh) * | 2012-04-14 | 2013-10-30 | 靖江先锋半导体科技有限公司 | 一种刻蚀电极机中的下电极装置 |
CN206432233U (zh) * | 2017-01-19 | 2017-08-22 | 江苏鲁汶仪器有限公司 | 刻蚀机的下电极载片台 |
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WO2018133482A1 (zh) * | 2017-01-19 | 2018-07-26 | 江苏鲁汶仪器有限公司 | 刻蚀机的下电极载片台 |
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CN110867365B (zh) * | 2019-11-04 | 2022-05-27 | 北京北方华创微电子装备有限公司 | 等离子体系统 |
CN111106045A (zh) * | 2019-12-31 | 2020-05-05 | 中芯集成电路(宁波)有限公司 | 半导体结构及其加工方法、刻蚀机 |
CN112908908A (zh) * | 2021-01-29 | 2021-06-04 | 宁波江丰电子材料股份有限公司 | 一种晶圆托盘的背面结构及其加工方法 |
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