CN206402194U - broadband LNA for satellite communication - Google Patents
broadband LNA for satellite communication Download PDFInfo
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- CN206402194U CN206402194U CN201621325059.9U CN201621325059U CN206402194U CN 206402194 U CN206402194 U CN 206402194U CN 201621325059 U CN201621325059 U CN 201621325059U CN 206402194 U CN206402194 U CN 206402194U
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- Prior art keywords
- low noise
- satellite communication
- broadband
- microstrip line
- fet
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Abstract
The utility model discloses a kind of broadband LNA for satellite communication, include the low noise FET of some series connection, biasing circuit is respectively configured in each low noise FET.The utility model patent is by the way of microstrip branch lines matching structure and low noise FET multi-stage cascade, with a kind of biasing circuit with temperature compensation effect, the problem of K-band receiver low noise, broadband, easy self-excitation is solved, balance is realized well between performance and volume cost;The utility model uses the matching way of science, is organically merged triode and low noise FET, realizes the features such as having low cost, low noise, high-gain, wide bandwidth, high stability, small compact;Microstrip branch lines matching structure, the characteristic with broadband;This biasing circuit has temperature compensation characteristic, improves the stability of broad band amplifier.
Description
Technical field
The utility model is related to Ka frequency range VSAT applied technical fields, and in particular to a kind of broadband for satellite communication
LNA。
Background technology
K-band receiver (LNB) is a ground satellite communication equipment, and its function is to realize satellite and the ground of Ka frequency ranges
Communication between standing.The features such as LNB has ultra-low noise, small volume, high gain, high frequency stability.K-band receiver
(LNB) and Ka wave bands transmitter (BUC) composition radio frequency outdoor unit (ODU), then with antenna feeder part and and indoor unit (IDU) one
Rise and constitute complete Ka band satellite transceivers.
In many RF indexes of K-band receiver (LNB), relatively crucial index is that noise coefficient, gain, phase are made an uproar
Sound, frequency stability and spuious etc.;For K-band receiver (LNB), its Major Difficulties:Cost, bandwidth, noise and steady
It is qualitative.LNA technologies are commonly used in K-band receiver, the function for realizing communication.
Therefore, need badly and want a kind of broadband LNA for satellite communication for solving cost, bandwidth, noise and stability.
Utility model content
Technical problem
In view of this, the utility model embodiment provides the broadband LNA for satellite communication, solves cost height, bandwidth not
The technical problem such as enough, noise is big and stability is bad.
According to one side of the present utility model, a kind of broadband LNA for satellite communication, including some series connection are disclosed
Low noise FET, biasing circuit is respectively configured in each low noise FET.
In one of the embodiments, coupled microstrip line is set between the low noise FET.
In one of the embodiments, the coupled microstrip line is 50 ohm of parallel coupled lines of quarter-wave.
In one of the embodiments, the input/output terminal of the coupled microstrip line sets 45 ° of corner cuts respectively.
In one of the embodiments, the input/output terminal of each low noise FET sets microstrip line point respectively
Branch match circuit.
In one of the embodiments, microstrip line branch match circuit is series connection low-resistance capacitive micro-strip and high resistant in parallel
Perceptual microstrip circuit.
In one of the embodiments, input of the biasing circuit by connecting the low noise FET respectively is defeated
The microstrip line branch match circuit for going out end connects the low noise FET.
In one of the embodiments, the broadband LNA has signal input part, and the signal input part uses waveguide
Cross to the structure of microstrip line.
In one of the embodiments, the microstrip line is the ohm microstrip of quarter-wave 60 and 1/10th wavelength
The microstrip line of 70 ohm microstrips series connection.
In one of the embodiments, the input and output pin of each low noise FET is equipped with predetermined length
Micro-strip debugs block;And/or
Each low noise FET sets feeding network respectively;And/or
The broadband LNA includes three low noise FETs;And/or
The biasing circuit is PNP bipolar transistor biasing circuits.
Using above-mentioned technical proposal, the utility model can at least obtain following technique effects:
The utility model patent is by the way of microstrip branch lines matching structure and low noise FET multi-stage cascade, fortune
With a kind of biasing circuit with temperature compensation effect, the problem of K-band receiver low noise, broadband, easy self-excitation is solved, in performance
Balance is realized between volume cost well;Also, this biasing circuit has temperature compensation characteristic, the steady of broad band amplifier is improved
It is qualitative;
The utility model uses the matching way of science, organically by triode and the fusion of low noise FET one
Rise, realize the features such as there is low cost, low noise, high-gain, wide bandwidth, high stability, small compact;
Microstrip branch lines matching structure, the characteristic with broadband.
Brief description of the drawings
, below will be to the utility model embodiment in order to illustrate more clearly of the technical scheme in the utility model embodiment
The accompanying drawing used required in description is briefly described, it should be apparent that, drawings in the following description are only that this practicality is new
Some embodiments of type, for those of ordinary skill in the art, on the premise of not paying creative work, can be with root
Other accompanying drawings are obtained according to the content and these accompanying drawings of the utility model embodiment.
Fig. 1 is the broadband LNA module maps for satellite communication described in the embodiment of the utility model one.
Through accompanying drawing, it should be noted that similar label is used to describe same or analogous element, feature and structure.
Embodiment
Description referring to the drawings is provided to help the disclosure that comprehensive understanding is limited by claim and its equivalent
Various embodiments.Description includes the various details for helping to understand below, but these details will be considered as only being example
Property.Therefore, it will be appreciated by those of ordinary skill in the art that do not depart from the scope of the present disclosure and spirit in the case of, can be right
Various embodiments described herein makes various changes and modifications.In addition, for clear and succinct, known function and retouching for constructing
Stating to be omitted.
Term and vocabulary used in following description and claims are not limited to document implication, but only by practical new
Type people is used for enabling the disclosure clearly and as one man to be understood.Therefore, to those skilled in the art should be obvious
The description of following various embodiments of this disclosure is to provide merely to exemplary purpose, and it is unrestricted will by appended right
Ask and its equivalent limit the disclosure purpose.
It should be understood that unless context is clearly indicated in addition, otherwise singulative also includes plural.Thus, for example,
Reference to " assembly surface " includes the reference to one or more such surfaces.
K-band receiver (LNB) is a ground satellite communication equipment, and its function is to realize satellite and the ground of Ka frequency ranges
Communication between standing.The features such as LNB has ultra-low noise, small volume, high gain, high frequency stability.K-band receiver
(LNB) and Ka wave bands transmitter (BUC) composition radio frequency outdoor unit (ODU), then with antenna feeder part and and indoor unit (IDU) one
Rise and constitute complete Ka band satellite transceivers.In many RF indexes of K-band receiver (LNB), compare crucial finger
Mark is noise coefficient, gain, phase noise, frequency stability and spuious etc.;For K-band receiver (LNB), its is main
Difficult point:Cost, bandwidth, noise and stability are, it is necessary to using microstrip branch lines matching structure and the biased electrical with temperature compensation response
The topological structure that road is combined.The wideband low noise amplifier that this patent is proposed has these features, inside K frequency ranges LNB
Belong to key technology.The utility model patent is using microstrip branch lines matching structure and the side of low noise FET multi-stage cascade
Formula, with a kind of biasing circuit with temperature compensation effect, solves the problem of K-band receiver low noise, broadband, easy self-excitation,
Balance is realized between performance and volume cost well;The utility model uses the matching way of science, organically by three
Pole pipe and low noise FET are merged, realize with low cost, low noise, high-gain, wide bandwidth, high stability,
The features such as small compact;Microstrip branch lines matching structure, the characteristic with broadband;This biasing circuit has temperature compensation characteristic, improves
The stability of broad band amplifier
Fig. 1 is the broadband LNA module maps for satellite communication described in the embodiment of the utility model one.
With reference to Fig. 1, the utility model discloses a kind of broadband LNA100 for satellite communication, including some series connection is low
Biasing circuit 140 is respectively configured in noise FET 120, each low noise FET.Wherein, biasing circuit 140 can be
Conventional biasing circuit.A kind of biasing circuit with temperature compensation effect of the utility model patent exploitation, solves K-band receiver
The problem of low noise, easy self-excitation, balance is realized well between performance and volume cost.
Also, coupled microstrip line 160 is provided between the low noise FET 120.The coupled microstrip line 160 is four
/ mono- 50 ohm of wavelength parallel coupled line, the input/output terminal of the coupled microstrip line 160 sets 45 ° of corner cuts respectively.This cuts
Angle scalable bandwidth, is easy to the smooth transmission of broadband signal, while reaching that blocking is acted on.
Wherein, the input/output terminal of the low noise FET 120 sets microstrip line branch match circuit 180 respectively.
Microstrip line branch match circuit 180 can be using series connection low-resistance capacitive micro-strip and the perceptual microstrip circuit of high resistant in parallel.
Wherein, the broadband LNA100 for satellite communication can include three low noise FETs, respectively first
Effect pipe, the second FET and the 3rd FET.Accordingly, the biasing circuit is respectively the first biasing circuit, second
Biasing circuit and the 3rd biasing circuit.
Three-level low noise FET input/output terminal, can use identical or different microstrip branch lines matching knot
Structure.Generally, the need for according to difference in functionality, each match circuit is the different circuit structures that difference in functionality is realized with correspondence
's.These different structures, can be configured according to the requirement of difference in functionality in the prior art.
For example, the microstrip line branch match circuit of the input of the first FET (connection broadband LNA signal input parts)
180 can be by the way of the perceptual micro-strip of series connection low-resistance capacitive micro-strip adduction connection high resistant, by the input of first order low noise field-effect
Its optimum noise impedance is impedance-matched to, so as to ensure to possess optimal noise coefficient in the case of broader bandwidth.Second, third
The input/output terminal of FET, or the first FET output end, it is main in the matching of microstrip line branch match circuit
Bandwidth, gain and gain flatness are paid close attention to, gain flatness can be adjusted, gain and bandwidth can be adjusted or increasing can be adjusted
Benefit.So, the cooperation between the concern function of the match circuit between multi-stage low noise FET can make whole broadband LNA
Performance is more stablized and superior.
Also, above-mentioned biasing circuit can be PNP bipolar transistor biasing circuits.The utility model uses of science
With mode, organically triode and low noise FET are merged, realize with low cost, low noise, high-gain,
The features such as wide bandwidth, high stability, small compact.
With reference to Fig. 1, above-mentioned biasing circuit 140 by connecting the input/output terminal of the low noise FET 120 respectively
Microstrip line branch match circuit 180 connect the low noise FET 120.
On the LNA100, the broadband LNA100 has signal input part, and the input 190 can use waveguide transition
To the structure of micro-strip.Wherein, the micro-strip is the ohm microstrip of quarter-wave 60 and the ohm microstrip of 1/10th wavelength 70
The series connection micro-strip of line.
For example, input is by the way of waveguide BJ220 is transitioned into micro-strip, micro-strip can be made up of two parts, one section four
The microstrip line of/mono- 60 ohm of wavelength, capacitive character is presented for centre frequency in it;One section of 1/10th 70 ohm of wavelength it is micro-
Band line, inductive is presented for centre frequency in it, the two series connection, can be transitioned into 50 ohm characteristic impedances from the high resistant of waveguide,
And high Q, the characteristic in broadband can be realized, while can guarantee that transmission loss is small.
Wherein, the input and output pin of each low noise FET 120 is equipped with predetermined length micro-strip debugging block
(not shown)., there is the micro-strip debugging block of certain length in the place of three low noise FET input and output pins (in appearance
Property), its major function is offsets plastic packaging pipe pin, in stray inductance caused by high band.
Each low noise FET can also set feeding network respectively.This network is for the steady of broad band amplifier
It is qualitative, it is significantly improved, calculates the value for obtaining each resistance in feeding network by designing, wanted with meeting each FET
The Vds and Ids asked.
Although the disclosure has shown and described in the various embodiments with reference to the disclosure, those skilled in the art will manage
Solution, in the case where not departing from the spirit and scope of the present disclosure being defined by the appended claims and the equivalents thereof, can enter to it
Various changes in row form and details.
Claims (10)
1. a kind of broadband LNA for satellite communication, includes the low noise FET of some series connection, it is characterised in that each
Biasing circuit is respectively configured in the low noise FET.
2. as claimed in claim 1 be used for satellite communication broadband LNA, it is characterised in that the low noise FET it
Between coupled microstrip line is set.
3. it is used for the broadband LNA of satellite communication as claimed in claim 2, it is characterised in that the coupled microstrip line is four points
One of 50 ohm of parallel coupled lines of wavelength.
4. it is used for the broadband LNA of satellite communication as claimed in claim 3, it is characterised in that the input of the coupled microstrip line
Output end sets 45 ° of corner cuts respectively.
5. it is used for the broadband LNA of satellite communication as claimed in claim 2, it is characterised in that each low noise field-effect
The input/output terminal of pipe sets identical or different microstrip line branch match circuit respectively.
6. it is used for the broadband LNA of satellite communication as claimed in claim 5, it is characterised in that the microstrip line branch matching electricity
Road is series connection low-resistance capacitive micro-strip and the perceptual microstrip circuit of high resistant in parallel.
7. it is used for the broadband LNA of satellite communication as claimed in claim 5, it is characterised in that the biasing circuit passes through respectively
The microstrip line branch match circuit for connecting the input/output terminal of the low noise FET connects the low noise FET.
8. the broadband LNA for satellite communication as described in claim 1 or 5, it is characterised in that the broadband LNA has letter
Number input, the signal input part using waveguide transition to microstrip line structure.
9. it is used for the broadband LNA of satellite communication as claimed in claim 8, it is characterised in that the microstrip line is a quarter
The ohm microstrip of wavelength 60 and the microstrip line of the ohm microstrip of 1/10th wavelength 70 series connection.
10. it is used for the broadband LNA of satellite communication as claimed in claim 1, it is characterised in that each low noise field-effect
The input and output pin of pipe is equipped with predetermined length micro-strip debugging block;And/or
Each low noise FET sets feeding network respectively;And/or
The broadband LNA includes three low noise FETs;And/or
The biasing circuit is PNP bipolar transistor biasing circuits.
Priority Applications (1)
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CN201621325059.9U CN206402194U (en) | 2016-12-05 | 2016-12-05 | broadband LNA for satellite communication |
Applications Claiming Priority (1)
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CN201621325059.9U CN206402194U (en) | 2016-12-05 | 2016-12-05 | broadband LNA for satellite communication |
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CN206402194U true CN206402194U (en) | 2017-08-11 |
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CN201621325059.9U Expired - Fee Related CN206402194U (en) | 2016-12-05 | 2016-12-05 | broadband LNA for satellite communication |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107612514A (en) * | 2017-10-30 | 2018-01-19 | 桂林电子科技大学 | A kind of Ka wave bands MMIC low-noise amplifiers |
-
2016
- 2016-12-05 CN CN201621325059.9U patent/CN206402194U/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107612514A (en) * | 2017-10-30 | 2018-01-19 | 桂林电子科技大学 | A kind of Ka wave bands MMIC low-noise amplifiers |
CN107612514B (en) * | 2017-10-30 | 2024-01-02 | 桂林电子科技大学 | Ka-band MMIC low-noise amplifier |
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GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170811 Termination date: 20181205 |