CN206399035U - A kind of modular radiation floor based on semiconductor heating - Google Patents
A kind of modular radiation floor based on semiconductor heating Download PDFInfo
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- CN206399035U CN206399035U CN201621471353.0U CN201621471353U CN206399035U CN 206399035 U CN206399035 U CN 206399035U CN 201621471353 U CN201621471353 U CN 201621471353U CN 206399035 U CN206399035 U CN 206399035U
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- 230000005855 radiation Effects 0.000 title claims abstract description 30
- 238000010438 heat treatment Methods 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 239000004020 conductor Substances 0.000 claims abstract description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000741 silica gel Substances 0.000 claims description 9
- 229910002027 silica gel Inorganic materials 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000004519 grease Substances 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 238000010276 construction Methods 0.000 abstract description 5
- 238000009434 installation Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000005265 energy consumption Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009408 flooring Methods 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004579 marble Substances 0.000 description 1
- 230000037081 physical activity Effects 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000005439 thermosphere Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Central Heating Systems (AREA)
- Floor Finish (AREA)
Abstract
A kind of modular radiation floor based on semiconductor heating, belongs to building element technical field.The radiation floor is made up of multiple floor unit modules, and each floor unit module includes floor upper strata, floor lower floor and semiconductor subassembly；The attachment structure of floor unit module is from top to bottom followed successively by floor upper strata, upper heat-conducting layer, upper metallic conductor, PN sections, lower metallic conductor, lower heat-conducting layer and floor lower floor；The wire of multiple floor unit modules is connected in parallel to each other.The utility model carries out heat temperature raising using semiconductor heating principle is quick to radiation floor upper surface, can realize segment space, part-time heating；With it is simple in construction the characteristics of, modularized production and installation can be carried out, efficiency of construction is high, while having very high stability and security.
Description
Technical field
The utility model is related to a kind of radiation floor, more particularly to a kind of modular radiation based on semiconductor heating
Plate.
Background technology
Because radiant heating has higher thermal comfort, therefore radiation floor system is liked by more and more residents
Love, new building starts to use radiation floor system on a large scale, and existing civil construction also has and many starts to do radiation floor
The installation transformation of system.Radiation floor system is big due to thermal inertia, it is therefore desirable to continuous operation, haves the shortcomings that energy consumption is big, such as
Where ensure that it is radiation floor system research emphasis that its heat supply efficiency is improved on the premise of security.
Radiation floor is broadly divided into hot-water heating floor and Electrical heating floor in the prior art.Hot-water heating floor by laying under floor
Water pipe, and pass to hot water floor is heated, easily there is dirty stifled, Maintenance and Repair trouble in the process of running in this mode,
Thermal inertia is big simultaneously, high energy consumption；Electrical heating floor is heated by laying the electric heating equipments such as Electric radiant Heating Film under floor to floor,
This mode haves the shortcomings that electrothermal efficiency is low, there may be hot-spot and fire occurs in high energy consumption, and running
Danger.The problem of existing floor heating system all has adjacent room's heat transfer in installation process, it is necessary to carry out the guarantor of floor bottoms
Temperature is lost to reduce system thermal, not only increases mounting design difficulty, and can not be from the problem of root solution heat waste.
Utility model content
The purpose of this utility model is to propose a kind of modular radiation floor based on semiconductor heating, utilizes semiconductor system
Thermal response is rapid, heating efficiency is high and it is stable the characteristics of, realize the personalized spot heating of radiation floor, be physical activity
Build the thermal environment of local comfort in region；And can intermittent work, safe and reliable, install and easy to maintenance.
The technical solution of the utility model is as follows：
A kind of modular radiation floor based on semiconductor heating, it is characterised in that：The radiation floor is by multiple floors
Unit module is constituted, and each floor unit module includes floor upper strata, floor lower floor and semiconductor subassembly；The semiconductor subassembly
Including PN sections, upper metallic conductor, lower metallic conductor, upper heat-conducting layer and lower heat-conducting layer；The attachment structure of floor unit module is by upper
Floor upper strata, upper heat-conducting layer, upper metallic conductor, PN sections, lower metallic conductor, lower heat-conducting layer and floor lower floor are followed successively by under；It is many
The wire of individual floor unit module is connected in parallel to each other.
In above-mentioned technical proposal, it is characterised in that：Floor upper strata, upper heat-conducting layer, upper metallic conductor, PN sections, lower metal are led
Body, lower heat-conducting layer and floor lower floor it is adjacent between contact position be coated with heat-conducting silicone grease or install heat conductive silica gel pad.
Preferably, the upper heat-conducting layer and lower heat-conducting layer are potsherd or heat conductive silica gel insulating trip；Upper heat-conducting layer is led with
Thermosphere thickness is 1-3mm.
Preferably, upper metallic conductor and lower metallic conductor thickness are 0.5-1mm.
Preferably, floor unit module is rectangle, and its area is 0.05-1m2。
Preferably, floor lower floor is layer of silica gel or rubber layer, and floor lower thickness is 2--10mm.
The utility model has the technique effect of advantages below and high-lighting：1. it is higher, anti-using semiconductor heating efficiency
Should be rapid, and semiconductor heating stable and safe in operation is high, can accomplish personalized spot heating.2. using the heat transfer shape of radiation
Formula heats, and thermal comfort is higher for human body.3. the problem of adjacent room conducts heat is avoided, heat can be completely used for radiation and supplied
Energy.4. modularized production and installation can be carried out, efficiency of construction is improved.
Brief description of the drawings
Fig. 1 is the structural representation of floor unit module.
Fig. 2 is semiconductor subassembly profile.
Fig. 3 is by the modular radiation floor of floor unit module assembled.
In figure：1- wires；2- floors upper strata；3- floors lower floor；4- semiconductor subassemblies；5-PN is saved；The upper heat-conducting layers of 6a-；6b-
Lower heat-conducting layer；7- power supplys；The upper metallic conductors of 8a-；Metallic conductor under 8b-；9- floor unit modules.
Embodiment
The utility model is described in detail below in conjunction with the accompanying drawings.
A kind of modular radiation floor based on semiconductor heating that the utility model is provided, the radiation floor is by multiple
Floor unit module 9 is constituted, and each floor unit module includes floor upper strata 2, floor lower floor 3 and (such as Fig. 1 of semiconductor subassembly 4
It is shown)；The semiconductor subassembly 4 includes PN sections 5, upper metallic conductor 8a, lower metallic conductor 8b, upper heat-conducting layer 6 and lower heat-conducting layer 6
(as shown in Figure 2)；The attachment structure of floor unit module 9 is from top to bottom followed successively by floor upper strata 2, upper heat-conducting layer 6a, upper metal
Conductor 8a, PN section 5, lower metallic conductor 8b, lower heat-conducting layer 6b and floor lower floor 3；Floor upper strata 2, upper heat-conducting layer 6a, upper metal are led
Body 8a, PN section 5, lower metallic conductor 8b, lower heat-conducting layer 6b and floor lower floor 3 it is adjacent between contact position be coated with heat-conducting silicone grease or installation
Heat conductive silica gel pad；The wire 1 of multiple floor unit modules is connected in parallel to each other.Each floor unit module can be rectangle, also optional
With other shapes, its area is generally 0.05-1m2。
The material of upper heat-conducting layer and lower heat-conducting layer, typically can be exhausted using potsherd or heat conductive silica gel using the heat conductor of insulation
Embolium, upper heat-conducting layer and lower heat-conducting layer thickness can be 1-3mm.Upper metallic conductor 8a and lower metallic conductor 8b material is preferably
Iron, copper or aluminium；The thickness of upper metallic conductor and lower metallic conductor is generally 0.5-1mm.Floor upper strata 2 is generally marble, porcelain
The common flooring material such as brick, timber, directly can be layed in room；Floor lower floor is layer of silica gel or rubber layer, under floor
Thickness degree is 2--10mm, for supporting fixed floor unit module 9, simultaneously because floor is compression body, prevent PN save 5 by
Extrude and damage, its thickness is generally 2--10mm.
Semiconductor subassembly 4 is under conditions of energization, and electric energy is input in PN sections 5, makes its lower surface formation low temperature face, floor
The lower floor of unit module 9 absorbs heat from the external world, and PN sections 5 are transferred to by floor lower floor 3, lower heat-conducting layer 6b, lower metallic conductor 8b
Lower surface；And it is high temperature face that PN, which saves 5 upper surfaces, the heat converted electrical energy into and the heat absorbed from the lower floor of floor unit module 9
Amount passes to floor upper strata 2 by upper metallic conductor 8a, upper heat-conducting layer 6a, realizes the heating of floor upper surface, realizes that radiation is supplied
It is warm.
It can be realized by the regulation to power supply 7 and the surface temperature on floor upper strata 2 is controlled, ensure that Indoor Thermal
Comfortable controllability.In order to ensure that the surface temperature on floor upper strata 2 is no more than upper safety limit, the surface temperature on floor upper strata 2
Power supply 7 is automatically cut off when too high, overtemperature protection is realized.
As shown in Fig. 2 the PN sections 5 in semiconductor subassembly 4 are evenly arranged, it is ensured that the heated uniformity in floor upper strata 2 and PN
The uniformity that section 5 is stressed.The density of PN sections 5 is decided by the maximum unit area heating amount of floor unit module 9, according to using
Scene and product demand are designed.
Used as shown in figure 3, floor unit module 9 can directly be connected in parallel with each other after assembling, substantially increase construction
The applicability of efficiency and product.It is by the interface of wire 1 of floor unit module 9 that each floor unit module 9 is in parallel, it is ensured that every
Module unit can simultaneously be powered under identical voltage and use.
Claims (6)
1. a kind of modular radiation floor based on semiconductor heating, it is characterised in that：The radiation floor is single by multiple floors
Element module (9) is constituted, and each floor unit module includes floor upper strata (2), floor lower floor (3) and semiconductor subassembly (4)；It is described
Semiconductor subassembly (4) includes PN sections (5), upper metallic conductor (8a), lower metallic conductor (8b), upper heat-conducting layer (6) and lower heat-conducting layer
(6)；The attachment structure of floor unit module (9) is from top to bottom followed successively by floor upper strata (2), upper heat-conducting layer (6a), upper metal and led
Body (8a), PN sections (5), lower metallic conductor (8b), lower heat-conducting layer (6b) and floor lower floor (3)；Multiple floor unit modules are led
Line (1) is connected in parallel to each other.
2. according to a kind of modular radiation floor based on semiconductor heating described in claim 1, it is characterised in that：On floor
Under layer (2), upper heat-conducting layer (6a), upper metallic conductor (8a), PN sections (5), lower metallic conductor (8b), lower heat-conducting layer (6b) and floor
Contact position is coated with heat-conducting silicone grease or installs heat conductive silica gel pad between layer (3) is adjacent.
3. according to a kind of modular radiation floor based on semiconductor heating described in claim 1 or 2, it is characterised in that：Institute
It is potsherd or heat conductive silica gel insulating trip to state heat-conducting layer (6a) and lower heat-conducting layer (6b)；The upper heat-conducting layer (6a) and lower heat conduction
Layer (6b) thickness is 1-3mm.
4. according to a kind of modular radiation floor based on semiconductor heating described in claim 1, it is characterised in that：On described
The thickness of metallic conductor (8a) and lower metallic conductor (8b) is 0.5-1mm.
5. according to a kind of modular radiation floor based on semiconductor heating described in claim 1, it is characterised in that：Floor is single
Element module (9) is rectangle, and its area is 0.05-1m2。
6. according to a kind of modular radiation floor based on semiconductor heating described in claim 1, it is characterised in that：Describedly
Plate lower floor (3) is layer of silica gel or rubber layer, and its thickness is 2--10mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621471353.0U CN206399035U (en) | 2016-12-29 | 2016-12-29 | A kind of modular radiation floor based on semiconductor heating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621471353.0U CN206399035U (en) | 2016-12-29 | 2016-12-29 | A kind of modular radiation floor based on semiconductor heating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206399035U true CN206399035U (en) | 2017-08-11 |
Family
ID=59516368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621471353.0U Active CN206399035U (en) | 2016-12-29 | 2016-12-29 | A kind of modular radiation floor based on semiconductor heating |
Country Status (1)
| Country | Link |
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| CN (1) | CN206399035U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107062686A (en) * | 2016-12-29 | 2017-08-18 | 清华大学 | A kind of modular radiation floor based on semiconductor heating |
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2016
- 2016-12-29 CN CN201621471353.0U patent/CN206399035U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107062686A (en) * | 2016-12-29 | 2017-08-18 | 清华大学 | A kind of modular radiation floor based on semiconductor heating |
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