CN206379724U - A kind of direct current input reverse-connection preventing circuit based on N MOSFET - Google Patents
A kind of direct current input reverse-connection preventing circuit based on N MOSFET Download PDFInfo
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- CN206379724U CN206379724U CN201720008845.4U CN201720008845U CN206379724U CN 206379724 U CN206379724 U CN 206379724U CN 201720008845 U CN201720008845 U CN 201720008845U CN 206379724 U CN206379724 U CN 206379724U
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- mosfet
- direct current
- direct
- preventing circuit
- connection preventing
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Abstract
Reverse-connection preventing circuit is inputted the utility model discloses a kind of direct current based on N MOSFET, it is included in the N-channel enhancement mode FET N MOSFET connected at direct-flow input end mouthful in positive electrode bus, the sense of current of the direct current input is pointed to by N MOSFET source electrode to drain, and the grid of the N MOSFET is connected with gate drive power.The pressure-resistant V of drain-source of the N MOSFETDSHigher than certain allowance that direct current inputs ceiling voltage setting.The gate drive power includes the anode connection direct-flow input end mouthful for being followed in series to form coupling inductance L1 D, commutation diode D3, resistance R15 and the voltage-regulator diode Z1, Z1 in loop, negative electrode connection N MOSFET grid.The utility model is in the case of reasonable in design; input protection to error-polarity connection can effectively be realized; and the damage for needing to safeguard will not be produced, in larger current, produced power attenuation is much smaller relative to the loss for sealing in diode design, and the normal work on circuit system influences very little.
Description
Technical field
The utility model is related to direct current input protection, and more particularly to a kind of direct current based on N-MOSFET inputs anti-reverse electricity
Road.
Background technology
In order to largely improve the anti-risk survival ability of product, current industry is produced to the electronics for needing direct current supply
Product can generally add input reverse polarity protection circuit, and (powerful device of direct current supply would generally be in the defeated of logic control circuit
Inbound port adds the circuit), especially in the case where installing distribution by downstream manufacturer.And in order to reduce material cost and design
Complexity, general product can all seal in the scheme of inlet highway using diode.This scheme has a fatal defect, is exactly
Power attenuation is larger, and particularly especially prominent in the larger circuit system of input current, caloric value is very considerable.The increasing of loss
Plus, the waste except that can bring the energy can also bring larger negative effect to the reliability of product and life-span.Even if some works
Cheng Shi have selected the relatively low Schottky diode of tube voltage drop, even but can not change the damage produced by several amperes of electric current
Consume the embarrassment brought.
In addition, in view of loss problem of the such scheme in larger current, some products are employed to be protected in direct-flow input end
After dangerous silk, in the mode of one or several diode of reverse parallel connection on positive and negative busbar.When inputting error-polarity connection, quick fuse
Fuse, so as to reach protective effect.The major defect of this scheme has：Many diodes relatively take up space（Especially in fuse
When blowout current is larger）, fuse replacement operation can bring very big maintenance cost（It is empty if easily changing fuse scheme
Between configuration aspects also more bother）.
Utility model content
The utility model purpose is：A kind of high, low in energy consumption, the non-maintaining reliability based on N-MOSFET is provided and cost and
Complexity is compared with the received direct current input reverse-connection preventing circuit of energy.
The technical solution of the utility model is：
A kind of direct current input reverse-connection preventing circuit based on N-MOSFET, is included at direct-flow input end mouthful and is gone here and there in positive electrode bus
One N-channel enhancement mode FET N-MOSFET of connection, the sense of current of the direct current input is referred to by N-MOSFET source electrode
To drain electrode, the grid of the N-MOSFET is connected with gate drive power.
It is preferred that, the pressure-resistant V of drain-source of the N-MOSFETDSHigher than certain allowance that direct current inputs ceiling voltage setting.
It is preferred that, the conduction impedance R of the N-MOSFETDS(ON)The power attenuation produced in the maximum input current of system
Less than setting value.
It is preferred that, the gate drive power includes coupling inductance L1-D, the commutation diode for being followed in series to form loop
D3, resistance R15 and voltage-regulator diode Z1, and the electric capacity C14 in parallel with voltage-regulator diode Z1, the sun of the voltage-regulator diode Z1
Pole connection direct-flow input end mouthful, negative electrode connects N-MOSFET grid；The coupling inductance L1-D and the coupling on other power supplys
Inductance L1-A Mutual Inductance Couplings.
The utility model has the advantages that：
The input reverse-connection preventing circuit of the direct current based on N-MOSFET disclosed in the utility model, in situation reasonable in design
Under, input protection to error-polarity connection can be effectively realized, and the damage for needing to safeguard will not be produced, it is produced in larger current
Power attenuation is much smaller relative to the loss for sealing in diode design, and the normal work on circuit system influences very little.
Brief description of the drawings
Below in conjunction with the accompanying drawings and embodiment is further described to the utility model：
Fig. 1 inputs the schematic diagram of reverse-connection preventing circuit for the direct current described in the utility model based on N-MOSFET；
The direct current based on N-MOSFET inputs the schematic diagram of reverse-connection preventing circuit in Fig. 2 the utility model embodiments.
Embodiment
As shown in figure 1, the input reverse-connection preventing circuit of the direct current based on N-MOSFET disclosed in the utility model, is included in straight
The N-channel enhancement mode FET N-MOSFET Q2 connected at stream input port on positive electrode bus J1-4, the direct current is defeated
The sense of current entered is pointed to by N-MOSFET source electrode and drained, and the grid of the N-MOSFET is connected with gate drive power.Institute
Stating gate drive power includes being followed in series to form coupling inductance L1-D, commutation diode D3, resistance R15 and the voltage stabilizing two in loop
Pole pipe Z1, and the electric capacity C14 in parallel with voltage-regulator diode Z1, resistance R7, the voltage-regulator diode Z1 anode connection direct current
Input port, negative electrode connects N-MOSFET grid；The coupling inductance L1-D and coupling inductance L1-A on other power supplys is mutual
Sense coupling.This programme is when system starts the starting stage and could not also provide effective driving to N-MOSFET, N-MOSFET
Internal intrinsic parasitic body diode also can forward conduction to meet the power demands of system startup.After system must be electrically activated, just
N-MOSFET can be driven to turn on, to significantly reduce the conduction impedance of the device.And when inputting error-polarity connection, body diode is in
Reverse blocking state, and now circuit system will not typically produce effective driving to open MOSFET, so as to reach reversed polarity
The purpose of protection.
The utility model needs the technical indicator met, and the pressure-resistant VDS of drain-source of the N-MOSFET is inputted most higher than direct current
Certain allowance of high voltage setting.The conduction impedance R of the N-MOSFETDS(ON)The work(produced in the maximum input current of system
Rate loss is less than setting value, meets design requirement（Radiating condition including mosfet package limitation and system）.
As shown in Fig. 2 in certain DC brushless electric motor controller, what is used at logic circuit key switch KSI is defeated
Enter reversed polarity protection circuit.Enhanced MOSFET (the models of N-channel of company of Infineon have been selected in the circuit：
BSC190N12NS3)Q21.This be one when driving voltage is that 10V, drain current are 39A, conducting resistance is 19m Ω's
TDSON-8 flat packages MOSFET.Gate drive power includes being followed in series to form coupling inductance L3-A, the pole of rectification two in loop
Pipe D26, resistance R101 and voltage-regulator diode D38, and the electric capacity C86 in parallel with voltage-regulator diode D38, C115, resistance R128,
Power consumption fully meets design requirement in practical operation and protective value is reliable.
Above-described embodiment is only to illustrate technical concepts and features of the present utility model, and its object is to allow be familiar with technique
People can understand content of the present utility model and implement according to this, protection domain of the present utility model can not be limited with this.It is all
The modification done according to the Spirit Essence of the utility model main technical schemes, should all cover in protection domain of the present utility model
Within.
Claims (4)
1. a kind of direct current input reverse-connection preventing circuit based on N-MOSFET, it is characterised in that：It is included at direct-flow input end mouthful just
The N-channel enhancement mode FET N-MOSFET connected on the bus of pole, the sense of current of the direct current input is by N-
MOSFET source electrode points to drain electrode, and the grid of the N-MOSFET is connected with gate drive power.
2. the direct current input reverse-connection preventing circuit according to claim 1 based on N-MOSFET, it is characterised in that：The N-
The MOSFET pressure-resistant V of drain-sourceDSHigher than certain allowance that direct current inputs ceiling voltage setting.
3. the direct current input reverse-connection preventing circuit according to claim 2 based on N-MOSFET, it is characterised in that：The N-
MOSFET conduction impedance RDS(ON)The power attenuation produced in the maximum input current of system is less than setting value.
4. the direct current input reverse-connection preventing circuit according to claim 1 based on N-MOSFET, it is characterised in that：The grid
Driving power supply includes being followed in series to form coupling inductance L1-D, commutation diode D3, resistance R15 and the voltage-regulator diode in loop
Z1, and the electric capacity C14, the voltage-regulator diode Z1 in parallel with voltage-regulator diode Z1 anode connect direct-flow input end mouthful, cloudy
Pole connects N-MOSFET grid；The coupling inductance L1-D and the coupling inductance L1-A Mutual Inductance Couplings on other power supplys.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720008845.4U CN206379724U (en) | 2017-01-05 | 2017-01-05 | A kind of direct current input reverse-connection preventing circuit based on N MOSFET |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720008845.4U CN206379724U (en) | 2017-01-05 | 2017-01-05 | A kind of direct current input reverse-connection preventing circuit based on N MOSFET |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206379724U true CN206379724U (en) | 2017-08-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720008845.4U Active CN206379724U (en) | 2017-01-05 | 2017-01-05 | A kind of direct current input reverse-connection preventing circuit based on N MOSFET |
Country Status (1)
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106532677A (en) * | 2017-01-05 | 2017-03-22 | 科蒂斯技术（苏州）有限公司 | DC input reverse connection preventing circuit based on N-MOSFET |
| CN111327303A (en) * | 2018-12-17 | 2020-06-23 | 广州汽车集团股份有限公司 | Negative-pressure-preventing feed-in circuit |
| CN115313345A (en) * | 2022-10-12 | 2022-11-08 | 成都新欣神风电子科技有限公司 | Reverse connection prevention protection circuit for direct-current power supply |
-
2017
- 2017-01-05 CN CN201720008845.4U patent/CN206379724U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106532677A (en) * | 2017-01-05 | 2017-03-22 | 科蒂斯技术（苏州）有限公司 | DC input reverse connection preventing circuit based on N-MOSFET |
| CN111327303A (en) * | 2018-12-17 | 2020-06-23 | 广州汽车集团股份有限公司 | Negative-pressure-preventing feed-in circuit |
| CN111327303B (en) * | 2018-12-17 | 2021-04-20 | 广州汽车集团股份有限公司 | Negative-pressure-preventing feed-in circuit |
| CN115313345A (en) * | 2022-10-12 | 2022-11-08 | 成都新欣神风电子科技有限公司 | Reverse connection prevention protection circuit for direct-current power supply |
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