CN206370444U - Organic electroluminescent device - Google Patents
Organic electroluminescent device Download PDFInfo
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- CN206370444U CN206370444U CN201621272629.2U CN201621272629U CN206370444U CN 206370444 U CN206370444 U CN 206370444U CN 201621272629 U CN201621272629 U CN 201621272629U CN 206370444 U CN206370444 U CN 206370444U
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- 239000002096 quantum dot Substances 0.000 claims abstract description 23
- 230000005540 biological transmission Effects 0.000 claims abstract description 17
- 238000002347 injection Methods 0.000 claims abstract description 17
- 239000007924 injection Substances 0.000 claims abstract description 17
- 238000005401 electroluminescence Methods 0.000 claims description 35
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 20
- IYZMXHQDXZKNCY-UHFFFAOYSA-N 1-n,1-n-diphenyl-4-n,4-n-bis[4-(n-phenylanilino)phenyl]benzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 IYZMXHQDXZKNCY-UHFFFAOYSA-N 0.000 claims description 7
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 5
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Inorganic materials O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 6
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 1
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 1
- 206010027476 Metastases Diseases 0.000 description 1
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000009401 metastasis Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
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- 230000005855 radiation Effects 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
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- Electroluminescent Light Sources (AREA)
Abstract
The utility model relates to an organic electroluminescent device, which comprises a hole injection layer (6), a hole transmission layer (5), a luminescent layer (4), an electron transmission layer (3), an electron injection layer (2) and a cathode layer (1) which are connected in sequence from one side of an anode layer (7); the light-emitting layer (4) is a perovskite quantum dot layer, and the thickness of the light-emitting layer (4) is 15-20 nm. The organic electroluminescent device adopts the perovskite quantum dot layer as the luminescent layer, strictly controls the thickness thereof, and makes the luminance of the organic electroluminescent device reach 32090cd/m through the selection of the materials and the thickness of other layers2The turn-on voltage is as low as 1.5V.
Description
Technical field
The utility model is related to photoelectric field, is related to a kind of photoelectric device, more particularly to a kind of organic electroluminescence device.
Background technology
At present, electroluminescent device is a kind of selfluminous element, belongs to pouring-in luminous, in the presence of forward bias,
Anode injects hole to charge transport layer, to transport layer Interface Moving in the presence of electric field, and by negative electrode injected electrons
From electron transfer layer to Interface Moving, due to the effect of potential barrier, electronics is not easily accessible charge transport layer, and luminous near interface
The accumulation of layer side, meets from negative electrode injected electrons and from anode injected holes in luminescent layer, is combined, give off energy, will
Molecule of the energy transmission to luminescent substance, makes it from ground state transition to excitation state, because excitation state is very unstable, excited molecule hair
Light returns to ground state, radiation transistion from excitation state and produces luminescence phenomenon.
Because the electroluminescent device prepared using inorganic compound has stabilized structure, service life is long, and stability is strong
Etc. advantage, it is widely used, but inorganic electroluminescence device is successful height, processing difficulties, inefficiency, it is difficult to
Demand of the people to device for display of message is met, organic electroluminescence device material selection range is wide, with low voltage drive, height
The characteristics such as brightness, wide viewing angle, fast response time, have good application prospect in terms of display illumination, obtain in recent years
Swift and violent development, organic electroluminescence device has become one of current study hotspot.
The A of CN 103904178 disclose a kind of quantum dot light emitting device.The quantum dot light emitting device includes adjacent successively set
Anode, hole transmission layer, quantum dot light emitting layer, electron transfer layer and the negative electrode put, quantum dot light emitting device also include electronics and hindered
Barrier, is arranged in electron transfer layer or is arranged between quantum dot light emitting layer and electron transfer layer.Using setting electronic blocking
On the one hand layer ensures the balance injection of carrier, on the other hand the electric charge between isolation electron transfer layer and quantum dot light emitting layer
Spontaneous metastasis, it is ensured that quantum dot electroneutral.The quantum dot light emitting device is using quantum dots, quantum such as conventional CdSe, CdS
Efficiency is low, and luminosity is uncontrollable.
The A of CN 105720204 disclose the inorganic perovskite light emitting diode with quantum dots that a kind inverts structure, including
Ito glass substrate, the ZnO electron transfer layers for being deposited on ito glass surface, inorganic perovskite CsPbX3Quantum dot light emitting layer, 4,
4 ', 4 "-three (carbazole -9- bases) triphenylamine hole transmission layer, hole injection layer and anode electrode materials.By following steps system
It is standby：ZnO electron transfer layers are deposited using magnetron sputtering method on clean ito glass first, CsPbX3 quantum dots are taken afterwards
Dispersion liquid is spin-coated on device surface, then thermal evaporation deposition TCTA hole transmission layers, reheating hydatogenesis hole injection layer, finally
Deposition anode electrode material.The luminescent layer of the light emitting diode uses CsPbX3, pass through the group that X is any two kinds of Cl, Br and I
Close to adjust luminescent layer luminosity, but the simple doping of two kinds of compounds can not have much impact to luminescent layer, no
The problem of luminosity of luminescent layer fundamentally being changed, and easily cause non-uniform light, while external quantum efficiency is relatively low.
Therefore, the quantum dots, brightness such as CdSe, CdS are used for the luminescent layer of organic electroluminescence device in the prior art
Low, the problem of cut-in voltage is high studies a kind of new organic electroluminescence device particularly significant.
Utility model content
For problems of the prior art, one of the purpose of this utility model is to provide a kind of organic electroluminescent
Device and preparation method thereof, the organic electroluminescence device luminosity is big, and cut-in voltage is small, and luminosity is controllable, described
Preparation method technique is simple, available for industrialized production.
For up to this purpose, the utility model uses following technical scheme：
A kind of organic electroluminescence device, the organic electroluminescence device includes the sky being sequentially connected from anode layer side
Cave implanted layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and cathode layer；
Wherein, the luminescent layer is perovskite quantum dot layer, and the thickness of the luminescent layer is 15~20nm.
The thickness of the layer of giving out light can be 15nm, 16nm, 17nm, 18nm, 19nm or 20nm etc., it is not limited to institute
Other the unrequited numerical value included in the numerical value enumerated, the number range are equally applicable.Wherein perovskite quantum dot layer is
Prior art, referring to the A of CN 105720204.
Below as the preferred technical scheme of the utility model, but the limit of the technical scheme provided not as the utility model
System, by the following technical programs, can preferably reach and realize technical purpose of the present utility model and beneficial effect.
As the preferred technical scheme of the utility model, the anode layer is any one in ITO layer, Au layers or Cu layers
Kind or at least two combination, the combination is typical but non-limiting examples have：ITO layer and Au layers of combination, Au layers and Cu layers
Combination, ITO layer and Cu layers of combination or ITO layer, Au layers and Cu layers of combination etc., effect is best when anode layer is ITO layer.
As the preferred technical scheme of the utility model, the hole injection layer is selected from PEDOT:PSS layer, MoO3Layer or
Any one in TDATA layers or at least two combination, the thickness of the hole injection layer is 10~30nm.
Wherein described combination is typical but non-limiting examples have PEDOT:PSS layer and MoO3The combination of layer, MoO3Layer and
TDATA layers of combination, PEDOT:PSS layer and TDATA layers of combination or PEDOT:PSS) layer, MoO3Layer and TDATA layers of combination
Deng hole injection layer is PEDOT:Effect is best during PSS layer；The thickness of the hole injection layer can be 10nm, 12nm,
15nm, 18nm, 20nm, 22nm, 25nm, 28nm or 30nm etc., it is not limited to being wrapped in cited numerical value, the number range
Other the unrequited numerical value contained are equally applicable.
As the preferred technical scheme of the utility model, the hole transmission layer is selected from TPD layers, Poly-TPD layers or NPD
Any one in layer or at least two combination, the thickness of the hole transmission layer is 5~30nm.
Wherein described combination is typical but non-limiting examples have：The combination of TPD layers and Poly-TPD layers, Poly-TPD layers and
NPD layers of combination, TPD layers and NPD layers of combination or TPD layers, Poly-TPD layers and NPD layers of combination etc., the hole transport
Effect is best when layer is Poly-TPD layers；The thickness of the hole transmission layer can be 5nm, 8nm, 10nm, 12nm, 15nm,
18nm, 20nm, 22nm, 25nm, 28nm or 30nm etc., it is not limited to included in cited numerical value, the number range
Other unrequited numerical value are equally applicable.
As the preferred technical scheme of the utility model, the electron transfer layer is selected from Alq3In layer, PBD layers or TPBi layers
Any one or at least two combination, the thickness of the electron transfer layer is 30~50nm.
Wherein described combination is typical but non-limiting examples have, Alq3Layer and PBD layers of combination, PBD layers and TPBi layers
Combination, Alq3Layer and TPBi layers of combination or Alq3Layer, combination of PBD layer and TPBi layers etc., the electron transfer layer are TPBi layers
Shi Xiaoguo is best；The thickness of the electron transfer layer can be 30nm, 32nm, 35nm, 38nm, 40nm, 42nm, 45nm, 48nm
Or 50nm etc., it is not limited to other the unrequited numerical value included in cited numerical value, the number range are similarly fitted
With.
As the preferred technical scheme of the utility model, the electron injecting layer is selected from LiF layers, ZnO layer or TiO2In layer
Any one or at least two combination, the thickness of the electron injecting layer is 1~5nm.
Wherein described combination typical case but non-limiting examples have combination, ZnO layer and the TiO of LiF layers and ZnO layer2Combination,
LiF layers and TiO2The combination of layer or LiF layers, ZnO layer and TiO2Layer etc., effect is best when the electron injecting layer is LiF layers；Institute
The thickness for stating electron injecting layer can be 1nm, 1.5nm, 2nm, 2.5nm, 3nm, 3.5nm, 4nm, 4.5nm or 5nm etc., but not
Other the unrequited numerical value for being only limitted to include in cited numerical value, the number range are equally applicable.
As the preferred technical scheme of the utility model, the cathode layer people in Al layers, Mg layers or Li layers divide suitable one
Kind or at least two combination, the thickness of the cathode layer is 100~200nm.
Wherein described combination typical case but non-limiting examples have, Al layer with Mg layers of combination, combination, the Al of Mg layers and Li layers
Layer and Li layers of combination or Al layers, Mg layers and Li layers of combination etc., effect is best when the cathode layer is Al；The cathode layer
Thickness can be 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 160nm, 170nm, 180nm, 190nm or 200nm
Deng it is not limited to other the unrequited numerical value included in cited numerical value, the number range are equally applicable.
Compared with prior art, the utility model at least has the advantages that：
The organic electroluminescence device that the utility model is provided is controlled using perovskite quantum dot layer as luminescent layer, and strictly
Its thickness is made, by the selection of material and thickness to other each layers, the organic electroluminescence device that the utility model is provided
Brightness reach 32090cd/m2, cut-in voltage as little as 1.5V.
Brief description of the drawings
Fig. 1 is the structural representation for the organic electroluminescence device that the utility model is provided；
In figure：1- cathode layers, 2- electron injecting layers, 3- electron transfer layers, 4- luminescent layers, 5- hole transmission layers, 6- holes
Implanted layer, 7- anode layers.
Embodiment
Further illustrate the technical solution of the utility model below in conjunction with the accompanying drawings and by embodiment.
The utility model specific embodiment part is described to have there is provided a kind of organic electroluminescence device as shown in Figure 1
Organic electroluminescence devices include hole injection layer 6, hole transmission layer 5, luminescent layer 4, the electronics being sequentially connected from the side of anode layer 7
Transmitting layer 3, electron injecting layer 2 and cathode layer 1；
Wherein, the luminescent layer 4 is perovskite quantum dot layer, and the thickness of the layer 4 of giving out light is 15~20nm.
For the utility model is better described, the technical solution of the utility model, typical case of the present utility model are readily appreciated
But non-limiting embodiment is as follows：
Embodiment 1
A kind of organic electroluminescence device, anode layer 7 is ITO layer, and hole injection layer 6 is the thick PEDOT of 20nm:PSS layer,
Hole transmission layer 5 is the thick Poly-TPD layers of 18nm, and luminescent layer 4 is the thick perovskite quantum dot layers of 18nm, and electron transfer layer 3 is
TPBi layers thick 40nm, electron injecting layer 2 is the thick LiF layers of 3nm, Al layers thick 1 150nm of cathode layer.
The luminosity of the OLED prepared is 32090cd/m2, cut-in voltage is 1.8V.
Embodiment 2
A kind of organic electroluminescence device, anode layer 7 is Au layers, and hole injection layer 6 is the thick TDATA layers of 10nm, hole
Transport layer 5 is the thick TPD layers of 5nm, and luminescent layer 4 is the thick perovskite quantum dot layers of 10nm, and electron transfer layer 3 is 30nm thick
PBD layers, electron injecting layer 2 is the thick ZnO layers of 1nm, Li layers thick 1 100nm of cathode layer.
The luminosity of the OLED prepared is 30785cd/m2, cut-in voltage is 1.62V.
Embodiment 3
A kind of organic electroluminescence device, anode layer 7 is Cu layers, and hole injection layer 6 is the thick MoO of 30nm3Layer, hole is passed
Defeated layer 5 is the thick NPD layers of 30nm, and luminescent layer 4 is the thick perovskite quantum dot layers of 30nm, and electron transfer layer 3 is 50nm thick
Alq3Layer, electron injecting layer 2 is the thick TiO of 5nm2Layer, Mg layers thick 1 200nm of cathode layer.
The luminosity of the OLED prepared is 31057cd/m2, cut-in voltage is 1.56V.
Embodiment 4
A kind of organic electroluminescence device, except anode layer 7 be Au layer with addition to Cu layers of combination, other conditions with implementation
Example 1 is identical.
The luminosity of the OLED prepared is 29700cd/m2, cut-in voltage is 1.66V.
Embodiment 5
A kind of organic electroluminescence device, except hole injection layer 6 is PEDOT:Outside PSS layer and TDATA layers of combination, its
His condition is same as Example 1.
The luminosity of the OLED prepared is 30220cd/m2, cut-in voltage is 1.62V.
Embodiment 6
A kind of organic electroluminescence device, in addition to hole transmission layer 5 is TPD layers and Poly-TPD layers of combination, other
Condition is same as Example 1.
The luminosity of the OLED prepared is 31980cd/m2, cut-in voltage is 1.5V.
Embodiment 7
A kind of organic electroluminescence device, in addition to electron transfer layer 3 is PBD layers and TPBi layers of combination, other conditions
It is same as Example 1.
The luminosity of the OLED prepared is 29520cd/m2, cut-in voltage is 1.57V.
Embodiment 8
A kind of organic electroluminescence device, in addition to electron injecting layer 2 is the LiF layers of combination with ZnO layer, other conditions are equal
It is same as Example 1.
The luminosity of the OLED prepared is 28710cd/m2, cut-in voltage is 1.78V.
Embodiment 9
A kind of organic electroluminescence device, except cathode layer 1 be Al layer with addition to Mg layers of combination, other conditions with implementation
Example 1 is identical.
The luminosity of the OLED prepared is 27960cd/m2, cut-in voltage is 1.74V.
The organic electroluminescence device that the utility model is provided can be seen that by embodiment 1-9, perovskite quantum is used
Point strictly controls its thickness as luminescent layer, and to device, other each layers are made and reasonably select and control its thickness, can make
Luminosity reaches 32090cd/m2, cut-in voltage as little as 1.5V.Simultaneously by organic electroluminescence device in addition to the light emitting layer its
The selection of his each layer, and its thickness is adjusted, the organic electroluminescence device of different luminous intensities and cut-in voltage can be obtained.
Applicant states that the utility model illustrates detailed construction feature of the present utility model by above-described embodiment, but
The utility model is not limited to above-mentioned detailed construction feature, that is, does not mean that the utility model has to rely on above-mentioned detailed construction
Feature could be implemented.Person of ordinary skill in the field it will be clearly understood that to it is of the present utility model it is any improve, to this practicality newly
The equivalence replacement of part selected by type and the increase of accessory, the selection of concrete mode etc., all fall within of the present utility model
Within the scope of protection domain and disclosure.
Preferred embodiment of the present utility model described in detail above, still, the utility model is not limited to above-mentioned reality
The detail in mode is applied, in range of the technology design of the present utility model, the technical solution of the utility model can be entered
The a variety of simple variants of row, these simple variants belong to protection domain of the present utility model.
It is further to note that each particular technique feature described in above-mentioned embodiment, in not lance
In the case of shield, it can be combined by any suitable means, in order to avoid unnecessary repetition, the utility model is to each
Possible combination is planted no longer separately to illustrate.
In addition, can also be combined between a variety of embodiments of the present utility model, as long as it is not disobeyed
Thought of the present utility model is carried on the back, it should equally be considered as content disclosed in the utility model.
Claims (7)
1. a kind of organic electroluminescence device, it is characterised in that the organic electroluminescence device is included from anode layer (7) side
The hole injection layer (6) that is sequentially connected, hole transmission layer (5), luminescent layer (4), electron transfer layer (3), electron injecting layer (2) with
And cathode layer (1)；
Wherein, the luminescent layer (4) is perovskite quantum dot layer, and the thickness of the luminescent layer (4) is 15~20nm.
2. organic electroluminescence device according to claim 1, it is characterised in that the anode layer (7) be selected from ITO layer,
In Au layers or Cu layers any one or at least two combination.
3. organic electroluminescence device according to claim 1, it is characterised in that the hole injection layer (6) is selected from
PEDOT:PSS layer, MoO3Layer or TDATA layers in any one or at least two combination, the thickness of the hole injection layer (6)
For 10~30nm.
4. organic electroluminescence device according to claim 1, it is characterised in that the hole transmission layer (5) is selected from TPD
Any one in layer, Poly-TPD layer or NPD layers or at least two combination, the thickness of the hole transmission layer (5) is 5~
30nm。
5. organic electroluminescence device according to claim 1, it is characterised in that the electron transfer layer (3) is selected from Alq3
Any one in layer, PBD layers or TPBi layers or at least two combination, the thickness of the electron transfer layer (3) is 30~50nm.
6. organic electroluminescence device according to claim 1, it is characterised in that the electron injecting layer (2) is selected from LiF
Layer, ZnO layer or TiO2Any one in layer or at least two combination, the thickness of the electron injecting layer (2) is 1~5nm.
7. organic electroluminescence device according to claim 1, it is characterised in that the cathode layer (1) is selected from Al layers, Mg
In layer or Li layer people any one or at least two combination, the thickness of the cathode layer (1) is 100~200nm.
Priority Applications (1)
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|---|---|---|---|
| CN201621272629.2U CN206370444U (en) | 2016-11-24 | 2016-11-24 | Organic electroluminescent device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621272629.2U CN206370444U (en) | 2016-11-24 | 2016-11-24 | Organic electroluminescent device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107768528A (en) * | 2017-09-13 | 2018-03-06 | 北京大学深圳研究生院 | Application of the fluoro alcoholic solvent in perovskite photoelectric device is prepared |
| CN109256475A (en) * | 2018-09-19 | 2019-01-22 | 电子科技大学 | A kind of perovskite light emitting diode and preparation method based on ultraviolet thermal anneal process |
| WO2021114366A1 (en) * | 2019-12-10 | 2021-06-17 | 深圳市华星光电半导体显示技术有限公司 | Light-emitting device and preparation method therefor |
-
2016
- 2016-11-24 CN CN201621272629.2U patent/CN206370444U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107768528A (en) * | 2017-09-13 | 2018-03-06 | 北京大学深圳研究生院 | Application of the fluoro alcoholic solvent in perovskite photoelectric device is prepared |
| CN107768528B (en) * | 2017-09-13 | 2019-10-29 | 北京大学深圳研究生院 | Fluoro alcoholic solvent is preparing the application in perovskite photoelectric device |
| CN109256475A (en) * | 2018-09-19 | 2019-01-22 | 电子科技大学 | A kind of perovskite light emitting diode and preparation method based on ultraviolet thermal anneal process |
| CN109256475B (en) * | 2018-09-19 | 2020-02-07 | 电子科技大学 | Perovskite light-emitting diode based on ultraviolet thermal annealing process and preparation method |
| WO2021114366A1 (en) * | 2019-12-10 | 2021-06-17 | 深圳市华星光电半导体显示技术有限公司 | Light-emitting device and preparation method therefor |
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