CN206340344U - A kind of gating circuit switch and the memory comprising the circuit - Google Patents
A kind of gating circuit switch and the memory comprising the circuit Download PDFInfo
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- CN206340344U CN206340344U CN201621272115.7U CN201621272115U CN206340344U CN 206340344 U CN206340344 U CN 206340344U CN 201621272115 U CN201621272115 U CN 201621272115U CN 206340344 U CN206340344 U CN 206340344U
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- 230000015654 memory Effects 0.000 title claims abstract description 98
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000013500 data storage Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
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Abstract
A kind of memory the utility model discloses gating circuit switch and comprising the circuit, the gating circuit switch includes：Memory cell connection end, reading switching tube, program switch pipe, read input end and programming input, the quantity for reading switching tube is one, the read input end is connected by reading switching tube with memory cell connection end, for turning on the memory cell connection end and read input end when receiving read control signal.A kind of gating circuit switch that the utility model embodiment is provided is by controlling a path read between the switching tube conducting read input end and memory cell connection end, realize when carrying out read operation to memory cell, reduce the conducting resistance of the gating circuit switch, increase conducting speed, and then improve the purpose of reading speed.
Description
Technical field
The utility model is related to memory technology field, more particularly to a kind of gating circuit switch and depositing comprising the circuit
Reservoir.
Background technology
Flash memory (flash memory) is a kind of nonvolatile memory (Non-volatile memory), its
Inside uses non-linear macroelement pattern, big with capacity, rewrites the advantages of speed is fast, it is adaptable to the storage of mass data.
In flash memory, a memory cell can see a metal oxide semiconductcor field effect transistor as
(Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET).Fig. 1 is a kind of common
MOSFET structure figure, including grid 20, source electrode 21, drain electrode 22, P-type silicon Semiconductor substrate 23 and tunnel oxide 24.Its phase
Mutually between connection be：P-type silicon Semiconductor substrate 23 diffuses out two N-type regions, one layer of tunnel of the top of P-type silicon Semiconductor substrate 23 covering
Oxide layer 24 is worn, finally two holes are made with the method for corrosion above N-type region, is distinguished on the insulating layer with the method for metallization
And three electrodes are made in two holes：Grid 20, source electrode 21 and drain electrode 22, source electrode 21 and drain electrode 22 correspond to two N-type regions respectively
And grid 20 is the wordline of memory cell, drain electrode 22 is the bit line of memory cell.Further, grid 20 is again including control gate
201st, IPD 202 (Inter Poly Dielectric, IPD), floating grid 203, and floating grid 203
Store electric charge.Flash memory is by changing the quantity of electronics in floating grid 203 come data storage.
When the memory cell in flash memory is read, apply after read voltage, memory cell produces electricity
Stream, the electric current for flowing through memory cell is compared with reference current by current comparator, if the high electricity of current comparator output
It is flat, then it represents that the current storage state of the memory cell is erasing state, that is, the data read are " 1 "；If current comparator is defeated
Go out low level, then it represents that the current storage state of the memory cell is programmed state, that is, the data read are " 0 ".Specifically, can
With the electrical block diagram during progress read operation shown in Figure 2 to memory cell, the drain electrode 22 of memory cell is passed through
Gating circuit switch 25 connects drain electrode 22 with the input SENBL of current comparator 26, passes through the electric current by drain electrode 22 is flowed through
It is compared with the reference current IREF of current comparator 26, draws the current storage state of memory cell；Further, referring to
The circuit structure diagram of gating circuit switch commonly used in the prior art 25 shown in Fig. 3, it includes memory cell connection end, with depositing
The drain electrode 22 of storage unit is connected；Also include common switch pipe hn2, read switching tube hn3, program switch pipe hn4 and discharge switch pipe
Hn1, and read input end SENBL and programming input PGMBL.When carrying out read operation to memory cell, the leakage of memory cell
The connection corresponding with the input in gating circuit switch 25 of pole 22, common switch pipe is controlled by the first read control signal YA_S
Hn2 conducting, controls to read switching tube hn3 conducting, therefore connected the leakage of memory cell by the second read control signal YB_S
Path between pole 22 and the input SENBL of current comparator 26.When being programmed operation to memory cell, then need to lead to
The first programming control signal YA_P control common switch pipes hn2 conducting is crossed, controls to compile by the second programming control signal YB_P
Journey switching tube hn4 conducting, therefore connected the path between the drain electrode 22 of memory cell and programming input PGMBL.
Obviously, the path between the drain electrode 22 of connected memory cell and the read input end SENBL of current comparator 26 needs
Turn on common switch pipe hn2 and read the two switching tubes of switching tube hn3, conducting resistance is common switch pipe hn2 and reads to switch
Pipe hn3 resistance and, therefore conducting resistance is big, to expect preferable read voltage, and big conducting resistance can make single to storage
The charging interval of the drain electrode of member becomes longer, and then causes reading speed slack-off, while to the design requirement of current comparator 26
It is higher；Meanwhile, the of switching tube hn3 conductings is read in the first read control signal YA_S and the control of control common switch pipe hn2 conducting
Need collaboration to carry out between two read control signal YB_S, add the complexity of whole read operation.
Utility model content
The utility model embodiment provides a kind of gating circuit switch and the memory comprising the circuit, realizes to depositing
When storage unit carries out read operation, reduce the conducting resistance of the gating circuit switch, increase conducting speed, and then improve reading
Speed.
In a first aspect, the utility model embodiment provides a kind of gating circuit switch, the circuit includes：
Memory cell connection end, reading switching tube, program switch pipe, read input end and programming input, the reading switching tube
Quantity be one, the read input end is connected by reading switching tube with memory cell connection end, for receiving reading control
The memory cell connection end and read input end are turned on during signal.
Further, the quantity of the program switch pipe is two, two programmings that the programming input passes through series connection
Switching tube is connected with memory cell connection end, for turning on the memory cell when being respectively received two programming control signals
Connection end and programming input.
Further, the circuit also includes：Discharge switch pipe, the memory cell connection end passes through the discharge switch
Pipe is grounded, for being discharged under the control of discharge signal.
Exemplarily, the switching tube is metal-oxide-semiconductor.
Second aspect, the utility model embodiment also provides a kind of memory, including memory cell, gating circuit switch and
Current comparator, the gating circuit switch is using the gating circuit switch described in above-mentioned first aspect.
A kind of gating circuit switch that the utility model embodiment is provided, including memory cell connection end, reading switching tube, volume
Journey switching tube, read input end and programming input, the quantity of the reading switching tube is one, and the read input end is switched by reading
Pipe is connected with memory cell connection end, for turning on the memory cell connection end and read input when receiving read control signal
End；The circuit is realized by controlling a path read between the switching tube conducting read input end and memory cell connection end
When carrying out read operation to memory cell, reduce the conducting resistance of the gating circuit switch, increase conducting speed, Jin Erti
The purpose of high reading speed.
Brief description of the drawings
Fig. 1 is a kind of structure chart of metal oxide semiconductcor field effect transistor as memory cell in flash chip；
Fig. 2 is electrical block diagram when carrying out read operation to memory cell in the prior art；
Fig. 3 is the circuit structure diagram of gating circuit switch of the prior art；
Fig. 4 is a kind of structural representation of gating circuit switch in the utility model embodiment one；
Fig. 5 is the structural representation of another gating circuit switch in the utility model embodiment one；
Fig. 6 is a kind of structural representation of gating circuit switch in the utility model embodiment two；
Fig. 7 is the structural representation of another gating circuit switch in the utility model embodiment two；
Fig. 8 is a kind of structural representation of memory in the utility model embodiment three.
Embodiment
The utility model is described in further detail with reference to the accompanying drawings and examples.It is understood that herein
Described specific embodiment is used only for explaining the utility model, rather than limits of the present utility model.Further need exist for
It is bright, for the ease of description, the part related to the utility model rather than entire infrastructure are illustrate only in accompanying drawing.
Embodiment one
Fig. 4 is a kind of structural representation for gating circuit switch that the utility model embodiment one is provided, and the present embodiment can
Suitable for flash memory carry out read operation when, by the gating circuit switch turn on memory cell drain electrode end with
Path between the input of current comparator.Referring to Fig. 4, the gating circuit switch that the present embodiment is provided specifically includes as follows：
Memory cell connection end COL<n:0>, read switching tube 110, program switch pipe 120, read input end SENBL and programming
Input PGMBL, the quantity for reading switching tube 110 is one, and read input end SENBL is connected by reading switching tube 110 with memory cell
Meet end COL<n:0>Connection, for receiving read control signal YA_S<n:0>When conducting memory cell connection end COL<n:0>
With read input end SENBL；
Wherein, memory cell connection end COL<n:0>Its essence is from the port of the drain electrode end of memory cell extraction, specifically
Reference can be made to shown in Fig. 1；Read input end SENBL essence is linked together with the input of current comparator；When to storage
When the read operation of unit starts, pass through read control signal YA_S<n:0>Control is read switching tube 110 and turned on, by the leakage of memory cell
Extremely turned on the input of current comparator, and then by the reference current in the electric current and current comparator that flow through memory cell
It is compared, it is programmed state " 0 " or erasing state " 1 " to finally give the current storage state of memory cell.
That need explanation is read control signal YA_S<n:0>, memory cell connection end COL<n:0>In "<n:0>"
Implication a, because flash memory has many memory cell, each memory cell according to the difference of itself memory capacity
It is that read operation is carried out to each memory cell for data storage, therefore the need for not being avoided that, in order to improve read operation
Efficiency, read gate switch 110 can be passed through between the drain electrode of each memory cell and the input of current comparator
Gated, therefore "<n:0>" represent first memory cell read control signal YA_S<0>To (n+1)th memory cell
Read control signal YA_S<n>, first memory cell connection end COL<0>To (n+1)th memory cell connection end COL<n>；Tool
Body, so that n is equal to 1 as an example, the structural representation of another gating circuit switch shown in Figure 5, certain n minimums can also
Equal to 0, now represent to only need to carry out read operation to a memory cell.
A kind of gating circuit switch that the present embodiment is provided, including memory cell connection end, reading switching tube, program switch
Pipe, read input end and programming input, the quantity of the reading switching tube is one, and the read input end is by reading switching tube with depositing
Storage unit connection end is connected, for turning on the memory cell connection end and read input end when receiving read control signal；Should
Circuit is realized right by controlling a path read between the switching tube conducting read input end and memory cell connection end
When memory cell carries out read operation, reduce the conducting resistance of the gating circuit switch, conducting resistance, which reduces, can make to storage list
The charging interval of the drain electrode of member shortens, and then increases conducting speed, reading speed is improved, while the design to current comparator
It is required that also corresponding reduction.
Embodiment two
Fig. 6 is a kind of gating circuit switch structural representation that the utility model embodiment two is provided, and the present embodiment is in reality
Apply and further optimized on the basis of example one, shown in Figure 6, the gating circuit switch is specifically included：
Memory cell connection end COL<3:0>, read switching tube 110, program switch pipe 120, read input end SENBL and programming
Input PGMBL, the quantity for reading switching tube 110 is one, and read input end SENBL is connected by reading switching tube 110 with memory cell
Meet end COL<3:0>Connection, for receiving read control signal YA_S<3:0>When conducting memory cell connection end COL<3:0>
With read input end SENBL；
Further, the gating circuit switch also includes discharge switch pipe hn1<3:0>, memory cell connection end COL<
3:0>Pass through discharge switch pipe hn1<3:0>Ground connection, for being discharged under the control of discharge signal.
Exemplarily, the switching tube is metal-oxide-semiconductor, and the quantity of program switch pipe 120 is two, the reading switch in such as Fig. 6
Pipe hn2<3:0>, program switch pipe hn3<3:0>And hn4<3:0>；Two program switch that programming input PGMBL passes through series connection
Pipe is hn3<3:0>And hn4<3:0>With memory cell connection end COL<3:0>Connection, for being respectively received two programming controls
Signal YA_P processed<3:0>And YB_P<3:0>When conducting memory cell connection end COL<3:0>With programming input PGMBL.
It is shown in Figure 6, when carrying out read operation to memory cell, read control signal YA_S only need to be passed through<3:0>Control
Read switching tube hn2<3:0>Conducting can be by memory cell connection end COL<3:0>Turned on read input end SENBL, compared to existing
There is technology, conducting resistance diminishes, to the connection end COL of memory cell<3:0>Charging interval shorter, and then add
Speed is turned on, and then improves reading speed.
It should be noted that with embodiment one on "<n:0>" explanation it is similar, the present embodiment take n be equal to 3, electric discharge
Switching tube hn1<0>、hn1<1>、hn1<2>、hn1<3>It is in parallel each other；Read switching tube hn2<3:0>, program switch pipe hn3<
3:0>And hn4<3:0>Also same principle is deferred to, another gating circuit switch structure shown in Fig. 7 is specifically may refer to and shows
It is intended to, Fig. 7 is so that n is equal to 1 as an example.
A kind of gating circuit switch that the present embodiment is provided, on the basis of embodiment one, by the way that switching tube is optimized for
Metal-oxide-semiconductor, facilitates and each switching tube is flexibly and accurately controlled, and has been better achieved and has carried out read operation to memory cell
When, reduce the conducting resistance of the gating circuit switch, conducting resistance, which reduces, can make the charging interval of the drain electrode to memory cell
Shorten, and then increase conducting speed, reading speed is improved, while the design requirement to current comparator is also accordingly reduced.
Embodiment three
Fig. 8 is the structural representation that the utility model implements a kind of three memories provided, is specifically included：Memory cell
300th, gating circuit switch 310 and current comparator 320, wherein, gating circuit switch 310 is provided using above-mentioned any embodiment
Gating circuit switch, the gating circuit switch provided by above-mentioned any embodiment so that memory have quickly reads
Speed.
Note, above are only preferred embodiment of the present utility model and institute's application technology principle.Those skilled in the art's meeting
Understand, the utility model is not limited to specific embodiment described here, can carried out for a person skilled in the art various bright
Aobvious change, readjust and substitute without departing from protection domain of the present utility model.Therefore, although pass through above example
The utility model is described in further detail, but the utility model is not limited only to above example, is not departing from
In the case that the utility model is conceived, other more Equivalent embodiments can also be included, and scope of the present utility model is by appended
Right determine.
Claims (5)
1. a kind of gating circuit switch, including memory cell connection end, reading switching tube, program switch pipe, read input end and programming
Input, it is characterised in that：
The quantity for reading switching tube is one, and the read input end is connected by reading switching tube with memory cell connection end, is used
The memory cell connection end and read input end are turned on when read control signal is being received.
2. circuit according to claim 1, it is characterised in that：
The quantity of the program switch pipe is two, and the programming input is single by two program switch pipes of series connection and storage
First connection end connection, for turning on the memory cell connection end when being respectively received two programming control signals and programming defeated
Enter end.
3. circuit according to claim 1, it is characterised in that also include：
Discharge switch pipe, the memory cell connection end is grounded by the discharge switch pipe, for the control in discharge signal
It is lower to be discharged.
4. according to any described circuits of claim 1-3, it is characterised in that the switching tube is metal-oxide-semiconductor.
5. a kind of memory, including memory cell, gating circuit switch and current comparator, it is characterised in that the gating is opened
Powered-down road is using any described gating circuit switch of claim 1-4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621272115.7U CN206340344U (en) | 2016-11-24 | 2016-11-24 | A kind of gating circuit switch and the memory comprising the circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621272115.7U CN206340344U (en) | 2016-11-24 | 2016-11-24 | A kind of gating circuit switch and the memory comprising the circuit |
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|---|---|
| CN206340344U true CN206340344U (en) | 2017-07-18 |
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| CN201621272115.7U Active CN206340344U (en) | 2016-11-24 | 2016-11-24 | A kind of gating circuit switch and the memory comprising the circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108109662A (en) * | 2016-11-24 | 2018-06-01 | 北京兆易创新科技股份有限公司 | A kind of gating circuit switch and the memory comprising the circuit |
| CN108215513A (en) * | 2018-02-05 | 2018-06-29 | 杭州旗捷科技有限公司 | Feedback circuit, consumable chip, the consumptive material of variable thresholding |
| CN108382073A (en) * | 2018-02-05 | 2018-08-10 | 杭州旗捷科技有限公司 | Feedback circuit, consumable chip, the consumptive material of variable thresholding |
-
2016
- 2016-11-24 CN CN201621272115.7U patent/CN206340344U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108109662A (en) * | 2016-11-24 | 2018-06-01 | 北京兆易创新科技股份有限公司 | A kind of gating circuit switch and the memory comprising the circuit |
| CN108215513A (en) * | 2018-02-05 | 2018-06-29 | 杭州旗捷科技有限公司 | Feedback circuit, consumable chip, the consumptive material of variable thresholding |
| CN108382073A (en) * | 2018-02-05 | 2018-08-10 | 杭州旗捷科技有限公司 | Feedback circuit, consumable chip, the consumptive material of variable thresholding |
| CN108215513B (en) * | 2018-02-05 | 2019-06-21 | 杭州旗捷科技有限公司 | Feed circuit, consumable chip, the consumptive material of variable thresholding |
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Address after: Room 101, Floor 1-5, Building 8, Yard 9, Fenghao East Road, Haidian District, Beijing 100094 Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 100083 12 Floors, Block A, Tiangong Building, Science and Technology University, 30 College Road, Haidian District, Beijing Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |
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