CN206331400U

CN206331400U - Piezoelectric film sensor with more Low ESR surface electrode layer

Info

Publication number: CN206331400U
Application number: CN201620821976.XU
Authority: CN
Inventors: 吕敬波; 王志坚
Original assignee: Jiangsu Rijiu Optoelectronics Joint Stock Co Ltd
Current assignee: Jiangsu Rijiu Optoelectronics Joint Stock Co Ltd
Priority date: 2016-08-01
Filing date: 2016-08-01
Publication date: 2017-07-14
Anticipated expiration: 2026-08-01

Abstract

The utility model discloses a kind of piezoelectric film sensor with more Low ESR surface electrode layer, including piezoelectric membrane and the electrode layer in the upper and lower surface of piezoelectric membrane at least one；It is characterized in that the electrode layer is wire netting compartment.This piezoelectric film sensor with more Low ESR surface electrode layer that the utility model is provided, its electrode layer uses wire netting compartment, under the conditions of same thickness, it is reached with light transmission rate essentially identical original ITO, but impedance is greatly reduced, its surface resistance have decreased to 0.1 ~ 10 Ω from 15 ~ 150 Ω so that conductance is greatly improved.Accordingly, the overall electric signal transmission sensitiveness of sensor then increases significantly, show as used touch control device instruction response speed faster, user's manipulation smooth degree is higher, disclosure satisfy that the functional requirement for piezoelectric film sensor Low ESR, high transmittance in industry.

Description

Piezoelectric film sensor with more Low ESR surface electrode layer

Technical field

The utility model is related to a kind of piezoelectric film sensor with more Low ESR surface electrode layer.

Background technology

Based on the piezoelectric transducer of PVDF piezoelectric film materials, because it to dynamic strain or pressure has higher spirit Sensitivity and response time and be widely used in electronics, medical treatment and the numerous areas such as ergonomic.Especially with intelligent hand Machine is the increasing fast of the electronic touch equipment of representative, and the demand for piezoelectric transducer is also increasing.

The main composition of known piezoelectric transducer includes（PVDF）Piezoelectric membrane and it is attached at following table on piezoelectric membrane The ito thin film electrode layer of at least one side in face.Ito thin film is a kind of n-type semiconductor, with preferable conductance, visible Light transmission rate, mechanical hardness and good chemical stability, are liquid crystal displays（LCD）, plasma display（PDP）, it is electroluminescent Active display（EL/OLED）, touch-screen（TouchPanel）, solar cell and other electronic instruments it is the most frequently used saturating Prescribed electrode material.

It is well known that the conductance height of electrode layer is directly connected to the transmission of sensor electric signal in piezoelectric transducer Sensitiveness, it is more sensitive, show as used touch control device and instruct response speed faster, user's manipulation smooth degree is higher.Electrode The height of layer conductance is determined by its impedance.Although current ito thin film has preferable light transmission rate compared to other piezoelectrics, But its impedance is relatively high, its impedance is interval during practice（Surface resistance）It is substantially all between 50 ~ 150 Ω, not Reach preferable Low ESR requirement.And the known improvement in terms of its impedance operator is all mainly to increase the thickness of ito thin film Degree, because thicker ito thin film can bring relatively low impedance, but have the disadvantage to cause light transmission rate to reduce, and is unfavorable for sensor Thickness control.

The content of the invention

The utility model purpose is：A kind of piezoelectric film sensor with more Low ESR surface electrode layer is provided, simultaneously Ensure the light transmission rate having had, disclosure satisfy that the functional requirement for piezoelectric film sensor Low ESR, high transmittance in industry.

The technical solution of the utility model is：A kind of piezoelectric film sensor with more Low ESR surface electrode layer, bag Include piezoelectric membrane and the electrode layer in the upper and lower surface of piezoelectric membrane at least one；It is characterized in that the electrode layer is Wire netting compartment.

Further, wire netting compartment described in the utility model is made for any one metal in copper, silver, molybdenum, aluminium, chromium Individual layer monometallic clathrum, or the single layer alloy clathrum being made for alloy arbitrarily two or more in above-mentioned metal；Or The wire netting compartment is laminated by foregoing two or more individual layer monometallic clathrum, such as by copper mesh layers and silver-colored grid Layer is stacked on top of one another, and each layer metal of stacking is differed.

Further, copper described in the utility model is Nanometer Copper.

It is preferred that, the series of Nanometer Copper is 20 ~ 200nm in the utility model.

Further, wire netting compartment described in the utility model is formed at piezoelectric membrane surface by vacuum sputtering, bag Interweaved containing netting twine and by netting twine the mesh formed.For not limited in shape the utility model of mesh, can with it is regular as Parallelogram or regular hexagon（It is cellular）, naturally it is also possible to it is other any non-regular free shapes, is set by computer Meter is formed.

Further, the line width of netting twine described in the utility model is preferably 2 ~ 6 μm, by line width control in certain limit The overall transmitance of wire netting compartment is inside conducive to reach most preferably.

Further, the mesh density of metal grill layer surface described in the utility model is 25 ~ 600 mesh, i.e., often put down The quantity of mesh is 25 ~ 600 on the area of square inch.Mesh density control is conducive into wire netting compartment within the specific limits Overall transmitance reaches most preferably.

Further, the surface resistance of wire netting compartment described in the utility model is 0.1 ~ 10 Ω, and the light of grid is saturating thereon It is 89% ~ 92% to cross rate.

Same routine techniques, piezoelectric membrane described in the utility model is PVDF piezoelectric membranes.Implement really as sensor When, need to pick out by lead as the wire netting compartment of electrode layer.

The utility model has the advantages that：

1. this piezoelectric film sensor with more Low ESR surface electrode layer that the utility model is provided, its electrode layer Using wire netting compartment, under the conditions of same thickness, it is reached with light transmission rate essentially identical original ITO, but impedance is big Big to decline, its surface resistance have decreased to 0.1 ~ 10 Ω from 15 ~ 150 Ω so that conductance is greatly improved.Accordingly, sensor is whole The electric signal transmission sensitiveness of body then increases significantly, shows as used touch control device instruction response speed faster, Yong Hucao Control smooth degree is higher, disclosure satisfy that the functional requirement for piezoelectric film sensor Low ESR, high transmittance in industry.

Brief description of the drawings

Below in conjunction with the accompanying drawings and embodiment is further described to the utility model：

Fig. 1 is cross-sectional view of the present utility model；

Fig. 2 is a kind of overlooking the structure diagram of wire netting compartment in Fig. 1；

Fig. 3 is the A enlarged diagrams in Fig. 2；

Fig. 4 is the overlooking the structure diagram of the another embodiment of wire netting compartment；

Fig. 5 is the B enlarged diagrams in Fig. 4；

Fig. 6 is the cross-sectional view of another embodiment of the utility model；

Fig. 7 is the overlooking the structure diagram of wire netting compartment in Fig. 6；

Fig. 8 is the C enlarged diagrams in Fig. 7.

Wherein：1st, piezoelectric membrane；2nd, wire netting compartment；2a, netting twine；2b, mesh；L, line width.

Embodiment

Embodiment 1：It is the piezoelectric membrane that the utility model has more Low ESR surface electrode layer with reference to shown in Fig. 1 ~ Fig. 3 A kind of embodiment of sensor, it has piezoelectric membrane 1 and the electrode layer located at the upper and lower surface of piezoelectric membrane 1, electrode Layer passes through lead（It is not drawn into figure）Pick out.The maximum improvement of this case is that the electrode layer is non-using conventional ITO layer, but is adopted With wire netting compartment 2.

Piezoelectric membrane 1 described in the present embodiment is PVDF piezoelectric membranes, and the wire netting compartment 2 is molybdenum aluminium alloy grid Layer, is single layer alloy clathrum, the surface of piezoelectric membrane 1 is formed at by vacuum sputtering, interweave comprising netting twine 2a and by netting twine 2a The mesh 2b of formation.The mesh 2b's is shaped as parallelogram, specifically with reference to shown in Fig. 2 and Fig. 3.

The line width L of netting twine 2a described in the present embodiment takes 4 μm, as shown in Figure 3.The mesh on the surface of wire netting compartment 2 2b density is 150 mesh.

The surface resistance of wire netting compartment described in the present embodiment 2 is 1 Ω, and light transmission rate is 89%.

Embodiment 2：With reference to shown in Fig. 4 and Fig. 5, the cross-section structure of the present embodiment is shown in Figure 1, the wire netting compartment 2 be nanometer copper mesh layers, is individual layer monometallic clathrum, and Nanometer Copper series is 50 ~ 200nm.The wire netting compartment 2 is equally logical Cross vacuum sputtering and be formed at the surface of piezoelectric membrane 1, interweaved comprising netting twine 2a and by netting twine 2a the mesh 2b formed.See Fig. 4 and figure 5, the mesh 2b's is shaped as regular hexagon, and the line width L of the netting twine 2a takes 2 μm, the mesh on the surface of wire netting compartment 2 2b density is 76 mesh.

The surface resistance of wire netting compartment described in the present embodiment 2 is 0.4 Ω, and light transmission rate is 92%.

Remaining be the same as Example 1 of the present embodiment.

Embodiment 3：It is the piezoelectric membrane that the utility model has more Low ESR surface electrode layer with reference to shown in Fig. 6 ~ Fig. 8 Another embodiment of sensor, it has piezoelectric membrane 1 and the electrode layer located at the upper and lower surface of piezoelectric membrane 1, electricity Pole layer passes through lead（It is not drawn into figure）Pick out.The maximum improvement of this case is that the electrode layer is non-using conventional ITO layer, but Using wire netting compartment 2, and every layer of wire netting compartment 2 is by the chromium clathrum 201 and the silver positioned at internal layer positioned at top layer Clathrum 202 is laminated, and is laminated type clathrum.

Piezoelectric membrane 1 described in the present embodiment is PVDF piezoelectric membranes.The silver-colored clathrum 202 of the internal layer first passes through vacuum Sputtering is formed at the surface of piezoelectric membrane 1, and the chromium clathrum 201 is formed at the silver-colored surface of clathrum 202 by vacuum sputtering again.Institute State chromium clathrum 201 identical with the mesh shape of silver-colored clathrum 202, the overlooking structure figure namely top layer chromium net of wire netting compartment 2 The overlooking structure figure of compartment 201, as shown in Fig. 7 ~ Fig. 8, it includes the netting twine 2a and mesh 2b formed that interweaved by netting twine 2a.It is described Mesh 2b's is shaped as non-regular shape, is formed by computer design.

The line width L of netting twine 2a described in the present embodiment takes 6 μm, as shown in Figure 8.The mesh on the surface of chromium clathrum 201 2b density is 140 mesh.

The surface resistance of wire netting compartment described in the present embodiment 2 is 2 Ω, and light transmission rate is 90%.

Certain above-described embodiment is only to illustrate technical concept of the present utility model and feature, and its object is to allow be familiar with this The people of technology can understand content of the present utility model and implement according to this, and protection model of the present utility model can not be limited with this Enclose.The modification that all Spirit Essences according to the utility model main technical schemes are done, should all cover and be protected of the present utility model Within the scope of shield.

Claims

1. a kind of piezoelectric film sensor with more Low ESR surface electrode layer, including piezoelectric membrane（1）With it is thin located at piezoelectricity Film（1）Electrode layer at least one in upper and lower surface；It is characterized in that the electrode layer is wire netting compartment（2）.

2. the piezoelectric film sensor according to claim 1 with more Low ESR surface electrode layer, it is characterised in that institute State wire netting compartment（2）The individual layer monometallic clathrum being made for any one metal in copper, silver, molybdenum, aluminium, chromium, or be upper State the single layer alloy clathrum that any two or more alloy is made in metal；Or the wire netting compartment（2）By foregoing two The individual layer monometallic clathrum for planting the above is laminated.

3. the piezoelectric film sensor according to claim 2 with more Low ESR surface electrode layer, it is characterised in that institute Copper is stated for Nanometer Copper.

4. the piezoelectric film sensor according to claim 3 with more Low ESR surface electrode layer, it is characterised in that receive The series of rice copper is 20 ~ 200nm.

5. the piezoelectric film sensor according to claim 1 with more Low ESR surface electrode layer, it is characterised in that institute State wire netting compartment（2）Piezoelectric membrane is formed at by vacuum sputtering（1）Surface, includes netting twine（2a）With by netting twine（2a）Interweave The mesh of formation（2b）.

6. the piezoelectric film sensor according to claim 5 with more Low ESR surface electrode layer, it is characterised in that institute State mesh（2b）Be shaped as parallelogram or regular hexagon or other any free shapes.

7. the piezoelectric film sensor according to claim 5 with more Low ESR surface electrode layer, it is characterised in that institute State netting twine（2a）Line width（L）For 2 ~ 6 μm.

8. the piezoelectric film sensor with more Low ESR surface electrode layer according to claim 5 or 6, it is characterised in that The wire netting compartment（2）The mesh on surface（2b）Density is 25 ~ 600 mesh.

9. the piezoelectric film sensor according to claim 1 with more Low ESR surface electrode layer, it is characterised in that institute State wire netting compartment（2）Surface resistance be 0.1 ~ 10 Ω, thereon the light transmission rate of grid be 89% ~ 92%.

10. having the piezoelectric film sensor of more Low ESR surface electrode layer according to claim 1 or 5, its feature exists In the piezoelectric membrane（1）For PVDF piezoelectric membranes.