CN206293475U - Quantum dot light emitting device - Google Patents
Quantum dot light emitting device Download PDFInfo
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- CN206293475U CN206293475U CN201621272920.XU CN201621272920U CN206293475U CN 206293475 U CN206293475 U CN 206293475U CN 201621272920 U CN201621272920 U CN 201621272920U CN 206293475 U CN206293475 U CN 206293475U
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- quantum dot
- light emitting
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- dot light
- emitting device
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Abstract
The utility model is related to a kind of quantum dot light emitting device, including：Anode, quantum dot light emitting layer and the negative electrode for stacking gradually；The quantum dot light emitting device also includes photoresist layer, and the photoresist layer extends from the anode to the negative electrode, and the quantum dot light emitting layer is separated into at least two separate parts respectively；At least one of the anode and the negative electrode are separated at least two separate parts by the photoresist layer.Quantum dot light emitting layer is separated at least two separate parts by above-mentioned quantum dot light emitting device, the quantum dot light emitting material of different colours can be filled in various pieces, by the luminous situation for adjusting various pieces quantum dot light emitting material so that quantum dot light emitting device shows different colors.
Description
Technical field
The utility model is related to display field, more particularly to a kind of quantum dot light emitting device.
Background technology
In recent years, with the continuous progress of quantum dot synthetic technology, research and development and the use of quantum dot light emitting device are also subject to
Increasing concern.Quantum dot light emitting material is constituted for a small amount of atom material, and its three-dimensional dimension is in Nano grade, exists
Quantum size effect.The halfwidth at quantum dot light emitting material emission peak is narrower, has excitation higher compared to OLED, because
This, quanta point material is applied on electroluminescent device, it is possible to achieve the color gamut levels more more excellent than OLED.
However, quantum dot light emitting device color conventional at this stage is single, it is difficult to meet luminescent device more and more extensive
Demand.
Utility model content
Based on this, it is necessary to for the single problem of quantum dot light emitting device color, there is provided a kind of quantum dot light emitting device.
A kind of quantum dot light emitting device, including：Anode, quantum dot light emitting layer and the negative electrode for stacking gradually；
The quantum dot light emitting device also includes photoresist layer, and the photoresist layer prolongs from the anode to the negative electrode
Stretch, and the quantum dot light emitting layer is separated at least two separate parts respectively；
It is separate that at least one of the anode and the negative electrode are separated at least two by the photoresist layer
Part.
Wherein in one embodiment, the quantum dot light emitting device also includes hole injection layer, the hole injection layer
Between the anode and the quantum dot light emitting layer, and the hole injection layer is separated at least two by the photoresist layer
Individual separate part.
Wherein in one embodiment, the quantum dot light emitting device also includes electron injecting layer, the electron injecting layer
Between the negative electrode and the quantum dot light emitting layer, and the electron injecting layer is separated at least two by the photoresist layer
Individual separate part.
Wherein in one embodiment, the quantum dot light emitting device also includes hole transmission layer, the hole transmission layer
Between the anode and the quantum dot light emitting layer, and the hole transmission layer is separated at least two by the photoresist layer
Individual separate part.
Wherein in one embodiment, the quantum dot light emitting device also includes electron transfer layer, the electron transfer layer
Between the negative electrode and the quantum dot light emitting layer, and the electron transfer layer is separated at least two by the photoresist layer
Individual separate part.
Wherein in one embodiment, the quantum dot light emitting device also includes substrate, and the substrate is remote with the anode
One side from the negative electrode is connected；The photoresist layer is by the anode spacer at least two separate parts.
Wherein in one embodiment, the quantum dot light emitting device also includes substrate, and the substrate is remote with the negative electrode
One side from the anode is connected；The photoresist layer is by the cathode spacer at least two separate parts.
Wherein in one embodiment, the substrate is TFT underlay substrates, and the thickness of the substrate is 180 μm~250 μ
m。
Wherein in one embodiment, the quantum dot light emitting layer is selected from blue quantum dot light emitting layer, red quantum dot hair
At least one in photosphere and green quantum dot light emitting layer, the thickness of the quantum dot light emitting layer is 20nm~40nm.
Wherein in one embodiment, the thickness of the negative electrode is 100nm~300nm, and the thickness of the anode is 100nm
~300nm, the photoresist layer is 0.5 μm~1 μm to the thickness that the negative electrode extends from the anode.
Above-mentioned quantum dot light emitting device includes the anode, quantum dot light emitting layer and the negative electrode that stack gradually, while also including certainly
The photoresist layer that anode extends to negative electrode, photoresist layer separates quantum dot light emitting layer, by quantum dot light emitting layer be separated into
Few two separate parts, can fill the quantum dot light emitting material of different colours in various pieces, each by regulation
The luminous situation of individual part quantum dot luminescent material so that quantum dot light emitting device shows different colors.
Brief description of the drawings
Fig. 1 is the generalized section of the quantum dot light emitting device of an implementation method；
Fig. 2 is the top view of the quantum dot light emitting layer of the quantum dot light emitting device shown in Fig. 1；
Fig. 3 is the generalized section of the quantum dot light emitting device of another implementation method；
Fig. 4 is the generalized section of the quantum dot light emitting device of another implementation method.
Specific embodiment
Quantum dot light emitting device is described in further detail with reference to specific embodiment and accompanying drawing.
Fig. 1 is referred to, the quantum dot light emitting device 100 of an implementation method includes anode 110, hole injection layer 120, hole
Transport layer 130, quantum dot light emitting layer 140, electron transfer layer 150, electron injecting layer 160, negative electrode 170, photoresist layer 180 and base
Plate 190.
In the illustrated embodiment, anode 110, hole injection layer 120, hole transmission layer 130, quantum dot light emitting layer
140th, electron transfer layer 150, electron injecting layer 160, negative electrode 170 are stacked gradually.
Wherein in an implementation method, anode 110 be indium-tin oxide electrode, indium zinc oxide electrode, tin oxide electrode or
Aluminum zinc oxide electrode.Anode substantially sheet film, the thickness of anode is 100nm~300nm.Use indium-tin oxide electrode, oxygen
When changing indium zinc electrode, tin oxide electrode and aluminum zinc oxide electrode, anode 110 has a preferably transparency, light can directly from
Anode is projected.
Hole injection layer 120 is layered on anode.Wherein in one embodiment, hole injection layer 120 is polyethylene click
Azoles (PVK) layer, dimethylphenyl silane base benzene (UGH-2) layer etc..The thickness of hole injection layer 120 is 10nm-20nm.Hole is injected
Layer 120 plays a part of level-density parameter higher.
Hole transmission layer 130 is layered in hole injection layer 120 away from the one side of anode 110, and hole transmission layer 130 is
PEDOT:PSS layer or p-type metal oxide nanoparticles layer.PEDOT:PSS be PEDOT (poly- 3,4-ethylene dioxythiophene) and
A kind of aqueous solution of high molecular polymer that PSS (poly styrene sulfonate) doping is formed, both combine has good conduction
Performance.Wherein in one embodiment, p-type metal oxide nanoparticles layer is molybdenum trioxide (MoO3) layer, nickel oxide (NiO)
Layer, vanadic anhydride (V2O5) layer or tungstic acid (WO3) layer.Hole transmission layer 130 plays a part of hole transport, and adjusts
Energy level difference, the effect of modification of surfaces state.The general material according to the selection matching of the work function of anode and luminescent layer, so as to realize more
Outstanding color gamut levels.The thickness of hole transmission layer 130 is 15nm~20nm.
Quantum dot light emitting layer 140 is layered in hole transmission layer 130 away from the one side of anode 110, quantum dot light emitting layer 140
Selected from least one in blue quantum dot light emitting layer, red quantum dot luminescent layer and green quantum dot light emitting layer.Need explanation
, connect two material composition core shell structures before and after the implication of the "/" involved by following part represents "/", and with
Material before "/" is core, with the material after "/" as shell.Blue quantum dot light emitting layer typically uses sulphur zinc cadmium/zinc sulphide
(CdZnS/ZnS) material, CdZnS/ZnS is the core shell structure with CdZnS as core, and with ZnS as shell, is dispersed in normal octane
In.The particle diameter of CdZnS/ZnS materials is 2nm-5nm, and launch wavelength is 450nm.In another implementation method, blue quantum
Point luminescent layer can also use indium phosphide/zinc sulphide (InP/ZnS) material, and InP/ZnS is with InP as core, and with ZnS as shell
Core shell structure, may be dissolved in toluene, and the particle diameter of InP/ZnS materials is 2nm~4nm, and launch wavelength is 500nm.Green quantum
Point luminescent layer and red quantum dot luminescent layer generally use indium phosphide/zinc sulphide (InP/ZnS) material, and InP/ZnS is with InP
It is core, and the core shell structure with ZnS as shell, in may be dissolved in toluene, as the InP/ZnS materials of green quantum dot light emitting layer
Particle diameter is 4nm~6nm, and launch wavelength is 530nm.As red quantum dot luminescent layer InP/ZnS materials particle diameter for 9nm~
11nm, launch wavelength is 625nm.
Electron transfer layer 150 is laminated in one side of the quantum dot light emitting layer 140 away from anode 110, and electron transfer layer 150 is oxygen
Change zinc layers, layer of lithium fluoride, OXD-7 layers, TPBI layers or F8BT layers.OXD-7 layers by 2,2 '-(1,3- phenyl) two [5- (the 4- tert-butyl groups
Phenyl) -1,3,4- oxadiazoles] material formed, TPBI layers by 1,3,5- tri- (1- phenyl -1H- benzimidazolyl-2 radicals-yl) benzene material shapes
Into F8BT layers is formed by 9,9- di-n-octyls fluorenes-diazosulfide copolymer material.Electron transfer layer 150 plays electric transmission
Effect, and adjust energy level difference, the effect of modification of surfaces state.What the work function selection according to negative electrode and quantum dot light emitting layer was matched
Material, so as to realize more excellent color gamut levels.The thickness of electron transfer layer 150 is 100nm~200nm.
Electron injecting layer 160 is laminated in one side of the electron transfer layer 150 away from anode 110.Wherein in one embodiment,
Electron injecting layer 160 is zinc oxide film.The thickness of electron injecting layer 160 is 10nm-20nm.
Negative electrode 170 is aluminium electrode, calcium electrode, barium electrode, silver electrode, magnesium electrode, calloy electrode or calcium silver alloy electricity
Pole.Negative electrode plays a part of electron injection.Above-mentioned electrode has reflectivity higher, can be conducive to the raising of light extraction efficiency, and
Above-mentioned electrode has relatively low work function, is more beneficial for the injection of electronics.The thickness of negative electrode 170 is 100nm~300nm.
Substrate 190 is arranged on one side of the negative electrode 170 away from anode 110.Wherein in an implementation method, substrate 190 is
TFT underlay substrates, substrate 190 uses Al2O3And SiO2Deng high light transmittance, the base material of high mechanical properties, with higher optical
Energy and reliability, the thickness of base material is 180 μm~250 μm.Gate metal layer, gate dielectric layer are sequentially depositing on base material, are had
Active layer, source-drain electrode metal level, passivation layer and pixel electrode layer, and image conversion treatment is carried out respectively, so as to obtain TFT substrate bases
Plate.Base material is once purged to deposit gate metal Mo on its surface again, and the thickness of the gate metal layer of deposition is 200nm；Again in grid
Pole metallic surface forms gate dielectric SiO2, the thickness of gate dielectric layer is 150nm；Active layer is formed, active layer uses indium
Gallium zinc oxide (IGZO) material, the thickness of active layer is 40nm；Form Mo layers of source-drain electrode metal, the thickness of source-drain electrode metal level
It is 200nm；Passivation layer is formed, passivation layer uses SiO2Material, the thickness of passivation layer is 300nm；Pixel electrode layer uses indium tin
Oxide semiconductor (ITO) material, the thickness of pixel electrode layer is 40nm.
Photoresist layer 180 facings anode 110 near the one of hole injection layer 120 from substrate 190 near the one of negative electrode 170
Face extends.Photoresist layer 180 is by hole injection layer 120, hole transmission layer 130, quantum dot light emitting layer 140, electron transfer layer
150th, electron injecting layer 160 is separated at least two separate parts respectively.In the illustrated embodiment, photoresist layer
180 by hole injection layer 120, hole transmission layer 130, quantum dot light emitting layer 140, electron transfer layer 150, electron injecting layer 160
3 separate parts are separated into respectively with negative electrode 170.Further combined with Fig. 2 as can be seen that independent at corresponding three
In quantum dot light emitting subelement 140a, 140b and 140c, the quantum of the different glow colors of three kinds of blue, green and red color can be filled
Point luminescent material so that quantum dot light emitting device shows different colors.It is believed that in another implementation method,
Photoresist layer 180 can also by hole injection layer 120, hole transmission layer 130, quantum dot light emitting layer 140, electron transfer layer 150,
Electron injecting layer 160 is separated into two or any amount of separate part more than two respectively.One wherein
In embodiment, photoresist layer 180 is acrylic resin.Photoresist layer is to the thickness that the negative electrode extends from the anode
0.5 μm~1 μm.
In the illustrated embodiment, substrate 190 is arranged on one side of the negative electrode 170 away from anode 110, and with separated
Negative electrode 170 is connected.Substrate 190 is controlled to negative electrode 170, so that single control the luminous of each quantum dot light emitting subelement
Situation.
It should be noted that in another implementation method, hole injection layer 120, hole transmission layer 130, electronics are passed
Defeated layer 150, electron injecting layer 160 and substrate 190 can be omitted.When omission hole injection layer 120 and electron injecting layer 160
When, hole transmission layer 130 is arranged between anode 110 and quantum dot light emitting layer 140, and electron transfer layer 150 is arranged on negative electrode 170
And quantum dot light emitting layer between.When hole transmission layer 130 and electron transfer layer 150 is omitted, hole injection layer 120 is arranged on sun
Between pole 110 and quantum dot light emitting layer 140, electron injecting layer 160 is arranged between negative electrode 170 and quantum dot light emitting layer 140.When
When hole injection layer 120, hole transmission layer 130, electron transfer layer 150 and electron injecting layer 160 are omitted altogether, anode 110, amount
Son point luminescent layer 140 and negative electrode 170 are stacked gradually.
Above-mentioned quantum dot light emitting device include stack gradually anode 110, hole injection layer 120, hole transmission layer 130,
Quantum dot light emitting layer 140, electron transfer layer 150, electron injecting layer 160, negative electrode 170.Also include prolonging to negative electrode from anode simultaneously
The photoresist layer 180 stretched, photoresist layer 180 is by hole injection layer 120, hole transmission layer 130, quantum dot light emitting layer 140, electronics
Transport layer 150, electron injecting layer 160 are separated, and quantum dot light emitting layer 130 is separated into at least two separate parts,
The quantum dot light emitting material of different colours can be filled in various pieces, by adjusting various pieces quantum dot light emitting material
Luminous situation so that quantum dot light emitting device shows different colors.
Refer to Fig. 3, structure and the implementation method base shown in Fig. 1 of the quantum dot light emitting device 200 of another implementation method
This is identical, and its difference is, substrate 290 is arranged on one side of the anode 210 away from negative electrode 270, and photoresist layer 280 is from negative electrode
270 facing substrate 290 near the one of anode 210 extends near the one side of anode 210, and anode 210 is separated into at least two
Separate part.In the implementation method shown in Fig. 3, negative electrode 270 is the structure of integral type.Substrate 290 is by anode
210 are controlled, so as to realize the control to each quantum dot light emitting layer unit.
Refer to Fig. 4, structure and the implementation method base described in Fig. 1 of the quantum dot light emitting device 300 of another implementation method
This is identical, and its difference is, substrate 390 is arranged on one side of the anode 310 away from negative electrode 370, and photoresist layer 380 is from negative electrode
370 facing substrate 390 away from the one of anode 310 extends near the one side of anode 310, and anode 310 and negative electrode 370 are separated
Into at least two separate parts.Substrate 390 is controlled by anode 310, so as to realize sending out each quantum dot
The control of light layer unit.In another implementation method, substrate 390 can also be arranged on negative electrode 370 away from the one of anode 310
Face.Substrate 390 is controlled by negative electrode 370, so as to realize the control to each quantum dot light emitting layer unit.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope of this specification record is all considered to be.
Embodiment described above only expresses several embodiments of the present utility model, and its description is more specific and detailed,
But therefore can not be interpreted as the limitation to utility model patent scope.It should be pointed out that for the common skill of this area
For art personnel, without departing from the concept of the premise utility, various modifications and improvements can be made, these are belonged to
Protection domain of the present utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.
Claims (10)
1. a kind of quantum dot light emitting device, it is characterised in that including：Anode, quantum dot light emitting layer and the negative electrode for stacking gradually；
The quantum dot light emitting device also includes photoresist layer, and the photoresist layer extends from the anode to the negative electrode, and
The quantum dot light emitting layer is separated at least two separate parts respectively；
At least one of the anode and the negative electrode are separated at least two separate parts by the photoresist layer.
2. quantum dot light emitting device according to claim 1, it is characterised in that the quantum dot light emitting device also includes sky
Cave implanted layer, the hole injection layer is located between the anode and the quantum dot light emitting layer, and the hole injection layer quilt
The photoresist layer is separated at least two separate parts.
3. quantum dot light emitting device according to claim 2, it is characterised in that the quantum dot light emitting device also includes electricity
Sub- implanted layer, the electron injecting layer is located between the negative electrode and the quantum dot light emitting layer, and the electron injecting layer quilt
The photoresist layer is separated at least two separate parts.
4. quantum dot light emitting device according to claim 1, it is characterised in that the quantum dot light emitting device also includes sky
Cave transport layer, the hole transmission layer is located between the anode and the quantum dot light emitting layer, and the hole transmission layer quilt
The photoresist layer is separated at least two separate parts.
5. quantum dot light emitting device according to claim 4, it is characterised in that the quantum dot light emitting device also includes electricity
Sub- transport layer, the electron transfer layer is located between the negative electrode and the quantum dot light emitting layer, and the electron transfer layer quilt
The photoresist layer is separated at least two separate parts.
6. quantum dot light emitting device according to claim 1, it is characterised in that the quantum dot light emitting device also includes base
Plate, one side of the substrate with the anode away from the negative electrode is connected；The photoresist layer is by the anode spacer at least
Two separate parts.
7. quantum dot light emitting device according to claim 1, it is characterised in that the quantum dot light emitting device also includes base
Plate, one side of the substrate with the negative electrode away from the anode is connected；The photoresist layer is by the cathode spacer at least
Two separate parts.
8. the quantum dot light emitting device according to claim 6 or 7, it is characterised in that the substrate is TFT underlay substrates,
The thickness of the substrate is 180 μm~250 μm.
9. quantum dot light emitting device according to claim 1, it is characterised in that the quantum dot light emitting layer is selected from amount of blue
At least one in son point luminescent layer, red quantum dot luminescent layer and green quantum dot light emitting layer, the quantum dot light emitting layer
Thickness is 20nm~40nm.
10. quantum dot light emitting device according to claim 1, it is characterised in that the thickness of the negative electrode be 100nm~
300nm, the thickness of the anode is 100nm~300nm, the thickness that the photoresist layer extends from the anode to the negative electrode
It is 0.5 μm~1 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621272920.XU CN206293475U (en) | 2016-11-24 | 2016-11-24 | Quantum dot light emitting device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621272920.XU CN206293475U (en) | 2016-11-24 | 2016-11-24 | Quantum dot light emitting device |
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| Publication Number | Publication Date |
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| CN206293475U true CN206293475U (en) | 2017-06-30 |
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ID=59100674
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| CN201621272920.XU Expired - Fee Related CN206293475U (en) | 2016-11-24 | 2016-11-24 | Quantum dot light emitting device |
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| CN (1) | CN206293475U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585662A (en) * | 2017-09-29 | 2019-04-05 | 上海和辉光电有限公司 | A kind of dot structure and preparation method thereof, display panel |
-
2016
- 2016-11-24 CN CN201621272920.XU patent/CN206293475U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585662A (en) * | 2017-09-29 | 2019-04-05 | 上海和辉光电有限公司 | A kind of dot structure and preparation method thereof, display panel |
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| CF01 | Termination of patent right due to non-payment of annual fee |