CN206258658U - A kind of tft array substrate and semi-transparent semi-reflecting liquid crystal display - Google Patents
A kind of tft array substrate and semi-transparent semi-reflecting liquid crystal display Download PDFInfo
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- CN206258658U CN206258658U CN201621410165.7U CN201621410165U CN206258658U CN 206258658 U CN206258658 U CN 206258658U CN 201621410165 U CN201621410165 U CN 201621410165U CN 206258658 U CN206258658 U CN 206258658U
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- electrode
- array substrate
- tft
- tft array
- grid line
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Abstract
The utility model discloses a kind of tft array substrate, it includes being formed lighttight a plurality of grid line, lighttight a plurality of data lines and multiple dot structures on the substrate；Each dot structure includes：Transmission electrode and reflecting electrode on the substrate is formed, grid line correspondence blocks the gap between the reflecting electrode and transmission electrode of each dot structure, and is arranged on the thin film transistor (TFT) on grid line；Also include light blocking layer, its correspondence blocks the gap between the adjacent light tight film layer of each dot structure and the gap between the reflecting electrode and transmission electrode of adjacent pixel structure.The invention also discloses a kind of semi-transparent semi-reflecting liquid crystal display.This tft array substrate, it adds light blocking layer on dot structure, reaches the light that block and can not be used effectively from backlight illumination, so as to eliminate the harmful effect of light leak；Ensure that display effect；Reduce pixel edge light leak；Lifting product contrast；And do not increase cost additionally, so as to enhance product competitiveness.
Description
Technical field
The utility model relate to display technology field, more particularly to a kind of tft array substrate and semi-transparent semi-reflecting liquid
Crystal display.
Background technology
With the maturation of the early 1990s TFT technology, color liquid crystal flat-panel display is developed rapidly, less than 10 years when
Between, it is main flow display that TFT-LCD shoots up, and this this have the advantage that inseparable with it.It is mainly characterized by：Use characteristic
It is good, environmental protection characteristic is good, the scope of application is wide, high degree of automation, being easily integrated and update.TFT is in glass or plastics
On the on-monocrystalline piece such as substrate（Can certainly be on chip）It is each necessary to form manufacture circuit by sputtering, chemical deposition process
Film is planted, the circuit needed by the processing and fabricating to film, as shown in figure 1, tft array substrate includes forming phase on the substrate
Mutually grid line 1 ' arranged in a crossed manner and data wire 2 ', the transmission being formed in the pixel region that the grid line 1 ' and data wire 2 ' are limited
Electrode 3 ', reflecting electrode 4 ' and thin film transistor (TFT) 5 '.Because the display of TFT-LCD needs backlight, easily produced during display
Raw some bad defects, light leak is exactly the common defect of one of which, there is gap 6 ' in pixel region between adjacent film layers, so
Light is projected from gap 6 ' and produces light leak.Light leak is under some pictures visually it can be seen that so as to influence showing for TFT-LCD
Show effect, while light leak can also reduce contrast.
Utility model content
Technical problem to be solved in the utility model there is provided a kind of tft array substrate, and it adds on dot structure
Enter light blocking layer, reach the light that block and can not be used effectively from backlight illumination, so as to eliminate the harmful effect of light leak；Energy
Enough ensure display effect；Reduce pixel edge light leak；Lifting product contrast；And do not increase cost additionally, so as to enhance
Product competitiveness.
The utility model additionally provides a kind of semi-transparent semi-reflecting liquid crystal display.
Technical problem to be solved in the utility model is achieved by the following technical programs：
A kind of tft array substrate, it includes being formed lighttight a plurality of grid line, lighttight many datas on the substrate
Line and multiple dot structures；Each dot structure includes：Form transmission electrode and reflecting electrode on the substrate, the grid line
Correspondence blocks the gap between the reflecting electrode and transmission electrode of each dot structure, and is arranged on the film on the grid line
Transistor；Also include light blocking layer, its correspondence blocks the gap and adjacent picture between the adjacent light tight film layer of each dot structure
Gap between the reflecting electrode and transmission electrode of plain structure.
The a kind of of the tft array substrate provided as the utility model improves, and the light blocking layer is with the grid line with layer shape
Into.
The a kind of of the tft array substrate provided as the utility model improves, each dot structure it is adjacent impermeable
Gap between light film layer includes：The breach on gap, reflecting electrode between data wire and reflecting electrode.
The a kind of of the tft array substrate provided as the utility model improves, the light blocking layer formed material be metal or
Light-proof material.
The a kind of of the tft array substrate provided as the utility model improves, and each described dot structure includes two
The thin film transistor (TFT), two grids of the thin film transistor (TFT) are electrically connected with the grid line；One of film crystal
The drain electrode of pipe is electrically connected with the reflecting electrode, source electrode and the electrode data line is electrically connected with；The leakage of another thin film transistor (TFT)
Pole is electrically connected with the transmission electrode, source electrode and the electrode data line is electrically connected with.
The a kind of of the tft array substrate provided as the utility model improves, the grid of the thin film transistor (TFT) with it is described
Grid line electric connection, source electrode and the electrode data line is electrically connected with, drain electrode are electric with the transmission electrode and the reflecting electrode respectively
Property connection.
A kind of semi-transparent semi-reflecting liquid crystal display, it includes color membrane substrates and any above-mentioned tft array substrate, the color film
Substrate includes black matrix", its covering grid line, data wire and thin film transistor (TFT).
The utility model has the advantages that：
Tft array substrate, it adds light blocking layer on dot structure, and it is used for blocking can not be had from backlight illumination
The light that effect is utilized, the harmful effect of light leak is eliminated with this；Ensure that display effect；Reduce pixel edge light leak；Lifting
Product contrast；And do not increase cost additionally, so as to enhance product competitiveness.
Brief description of the drawings
Fig. 1 is the structural representation of existing tft array substrate；
Fig. 2 is the structural representation of the utility model tft array substrate.
Specific embodiment
The utility model is described in detail with reference to embodiment, embodiment is only preferred reality of the present utility model
Mode is applied, is not to restriction of the present utility model.
Embodiment 1
As shown in Fig. 2 which show a kind of tft array substrate that the present embodiment is provided, it includes being formed on the substrate
Lighttight a plurality of grid line 1, lighttight a plurality of data lines 2 and multiple dot structures；Wherein, each dot structure includes：Shape
Into transmission electrode 3 and reflecting electrode 4 on the substrate, the correspondence of the grid line 1 blocks the He of reflecting electrode 4 of each dot structure
Gap between transmission electrode 3, and it is arranged on the thin film transistor (TFT) 5 on the grid line 1.The tft array substrate also includes
Light blocking layer 7, its correspondence blocks the reflection in the gap and adjacent pixel structure between the adjacent light tight film layer of each dot structure
Gap between electrode 4 and transmission electrode 3, it is used for blocking the light that can not be used effectively from backlight illumination, with this
To eliminate the harmful effect of light leak；Display effect can not only be ensured, and reduce pixel edge light leak and lifting product contrast
Degree, the Structure Comparison degree after improvement is compared to the raising more than 30% before improving.
Used as a kind of preferred embodiment, the light blocking layer 7 is formed with the grid line 1 with layer, that is, design the mask plate of grid line 1
When in mask plate add light blocking layer 7 design, it is not necessary in addition design light blocking layer 7 mask plate, therefore not additionally increase cover
Lamina membranacea, cost is not also just increased additionally.It is highly preferred that the light blocking layer 7 of the adjacent dot structure is separate, that is, it is not connected to
Whole piece light blocking layer is formed, joining together normal display of can influence on the contrary.It is worth noting that, the light blocking layer 7 is no power
, because light blocking layer 7 is powered, the electric field during electric capacity easily influences dot structure is had, it is not charged then to be influenceed without this.
Used as a kind of preferred embodiment, the gap between the adjacent light tight film layer of each dot structure includes：
The breach 6 on gap, reflecting electrode 4 between data wire 2 and reflecting electrode 4.Further, also including on reflecting electrode 4
Breach 6, because the size of breach 6 can influence pixel aperture ratio and transmitance, therefore it can be determined the need for according to actual conditions
Change breach 6.After employing the existing dot structure that grid line 1 is located between the transmission electrode 3 and reflecting electrode 4, under substrate
Backlight produced by backlight when transmitted through the substrate, a part will be blocked by the grid line 1, but have part
Light can be between data wire 2 and reflecting electrode 4 gap and reflecting electrode 4 on breach 6 spill, adjacent picture in actual product
Gap between the reflecting electrode 4 and transmission electrode 3 of plain structure also occurs obvious light leak, therefore it is new to employ this practicality
After the dot structure of type, due to the design of light blocking layer 7, unemployed backlight is stopped such that it is able between reducing or eliminating
The abnormal show of gap, and then improve display quality.
It should be noted that the breach
Used as a kind of preferred embodiment, the grid line 1 and data wire 2 can be made of opaque metal material,
Specific metal material can be with metals such as aluminium, molybdenums.The material of the light blocking layer 7 can be metal or other light-proof materials
Etc..
As a kind of preferred embodiment, as shown in Fig. 2 each dot structure can also be by an institute in the present embodiment
Thin film transistor (TFT) 5 is stated, to control simultaneously the voltage of the transmission electrode 3 and the reflecting electrode 4.Now, the film crystal
The grid of pipe 5 is electrically connected with the grid line 1, and source electrode is electrically connected with the data wire 2, drain electrode respectively with the transmission electrode
3 are electrically electrically connected with the reflecting electrode 4.
Used as another preferred embodiment, each dot structure can include two films crystalline substances in the present embodiment
Body pipe 5, controls the voltage of the transmission electrode 3 and the reflecting electrode 4 respectively.Now, two grid of the thin film transistor (TFT) 5
Extremely it is electrically connected with the grid line 1；The drain electrode of one of thin film transistor (TFT) 5 is electrically connected with the reflecting electrode 4, source electrode
It is electrically connected with the data wire 2；The drain electrode of another thin film transistor (TFT) 5 is electrically connected with the transmission electrode 3, source electrode and institute
Data wire 2 is stated to be electrically connected with.Above-mentioned two thin film transistor (TFT) 5 can have formed objects and performance.
It should be noted that each dot structure uses a thin film transistor (TFT) 5, two thin film transistor (TFT)s 5
Or more the thin film transistor (TFT) 5, be known technology in those skilled in the art, can be above two connected mode,
Can also be other connected modes.
It should be noted that for the ease of clearly showing that, the part film layer on the tft array substrate（Such as public electrode
Deng）It is not shown in Fig. 2, but those skilled in the art understand position and its effect of other film layers according to known technology, herein
No longer describe in detail.
Embodiment 2
The tft array substrate of the Transflective based on the above, the present embodiment additionally provides a kind of semi-transparent semi-reflecting liquid crystal
Show device, the semi-transparent semi-reflecting liquid crystal display includes：Color membrane substrates, the TFT as described in Example 1 for being engaged in the color membrane substrates
Array base palte and the liquid crystal layer being located between the color membrane substrates and the tft array substrate；On the tft array substrate
Multiple dot structures are formed with, each dot structure corresponds respectively to a transmission area and an echo area, the transmission area and described
The thickness of liquid crystal layer of echo area is different.
Used as a kind of preferred embodiment, the thickness of liquid crystal layer of the transmission area is the thickness of liquid crystal layer of the echo area
Twice.Certainly, the proportionate relationship between the thickness of liquid crystal layer of the thickness of liquid crystal layer of the transmission area and the echo area can also
It is not strict twice relation.
Used as a kind of preferred embodiment, the color membrane substrates include black matrix", its described grid line of covering, data wire and
Thin film transistor (TFT).
The liquid crystal display that the present embodiment is provided, its tft array substrate adds light blocking layer on dot structure, and it is used for hiding
The light for coming to be used effectively from backlight illumination is kept off, the harmful effect of light leak is eliminated with this；Ensure that display effect
Really；Reduce pixel edge light leak；Lifting product contrast；And do not increase cost additionally, so as to enhance product competitiveness.
Embodiment described above only expresses implementation method of the present utility model, and its description is more specific and detailed, but simultaneously
Therefore the limitation to the utility model the scope of the claims can not be interpreted as, as long as the institute in the form of equivalent or equivalent transformation
The technical scheme of acquisition, all should fall within protection domain of the present utility model.
Claims (7)
1. a kind of tft array substrate, it includes being formed lighttight a plurality of grid line, lighttight a plurality of data lines on the substrate
With multiple dot structures；Each dot structure includes：Form transmission electrode and reflecting electrode on the substrate, the grid line pair
The gap between the reflecting electrode and transmission electrode of each dot structure should be blocked, and is arranged on the film crystalline substance on the grid line
Body pipe；Also include light blocking layer, its correspondence blocks the gap and adjacent pixel between the adjacent light tight film layer of each dot structure
Gap between the reflecting electrode and transmission electrode of structure.
2. tft array substrate according to claim 1, it is characterised in that the light blocking layer is formed with the grid line with layer.
3. tft array substrate according to claim 1 and 2, it is characterised in that each dot structure it is adjacent impermeable
Gap between light film layer includes：The breach on gap, reflecting electrode between data wire and reflecting electrode.
4. tft array substrate according to claim 1, it is characterised in that it is metal or not that the light blocking layer forms material
Light transmissive material.
5. tft array substrate according to claim 1 and 2, it is characterised in that each described dot structure includes two
The thin film transistor (TFT), two grids of the thin film transistor (TFT) are electrically connected with the grid line；One of film crystal
The drain electrode of pipe is electrically connected with the reflecting electrode, source electrode and the electrode data line is electrically connected with；The leakage of another thin film transistor (TFT)
Pole is electrically connected with the transmission electrode, source electrode and the electrode data line is electrically connected with.
6. tft array substrate according to claim 1, it is characterised in that the grid of the thin film transistor (TFT) and the grid
Line electric connection, source electrode and the electrode data line is electrically connected with, drain electrical with the transmission electrode and the reflecting electrode respectively
Connection.
7. a kind of semi-transparent semi-reflecting liquid crystal display, it is characterised in that including color membrane substrates and as described in claim 1 to 6 is any
Tft array substrate, the color membrane substrates include black matrix", its covering grid line, data wire and thin film transistor (TFT).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621410165.7U CN206258658U (en) | 2016-12-21 | 2016-12-21 | A kind of tft array substrate and semi-transparent semi-reflecting liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621410165.7U CN206258658U (en) | 2016-12-21 | 2016-12-21 | A kind of tft array substrate and semi-transparent semi-reflecting liquid crystal display |
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| CN206258658U true CN206258658U (en) | 2017-06-16 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107065431A (en) * | 2017-06-30 | 2017-08-18 | 武汉华星光电半导体显示技术有限公司 | Mask plate |
| WO2020168560A1 (en) * | 2019-02-22 | 2020-08-27 | 京东方科技集团股份有限公司 | Array substrate and display device |
| WO2021031443A1 (en) * | 2019-08-21 | 2021-02-25 | 深圳市华星光电半导体显示技术有限公司 | Array substrate, liquid crystal display panel, and liquid crystal display device |
| WO2023011389A1 (en) * | 2021-08-06 | 2023-02-09 | 京东方科技集团股份有限公司 | Array substrate and preparation method therefor, display panel and display device |
-
2016
- 2016-12-21 CN CN201621410165.7U patent/CN206258658U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107065431A (en) * | 2017-06-30 | 2017-08-18 | 武汉华星光电半导体显示技术有限公司 | Mask plate |
| WO2020168560A1 (en) * | 2019-02-22 | 2020-08-27 | 京东方科技集团股份有限公司 | Array substrate and display device |
| WO2021031443A1 (en) * | 2019-08-21 | 2021-02-25 | 深圳市华星光电半导体显示技术有限公司 | Array substrate, liquid crystal display panel, and liquid crystal display device |
| WO2023011389A1 (en) * | 2021-08-06 | 2023-02-09 | 京东方科技集团股份有限公司 | Array substrate and preparation method therefor, display panel and display device |
| CN115704978A (en) * | 2021-08-06 | 2023-02-17 | 北京京东方光电科技有限公司 | Array substrate, preparation method thereof, display panel and display device |
| CN115704978B (en) * | 2021-08-06 | 2024-04-02 | 北京京东方光电科技有限公司 | Array substrate, preparation method thereof, display panel and display device |
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