CN206163452U - Banded beam field emissive cathode system of size of receiving a little - Google Patents
Banded beam field emissive cathode system of size of receiving a little Download PDFInfo
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- CN206163452U CN206163452U CN201621153776.8U CN201621153776U CN206163452U CN 206163452 U CN206163452 U CN 206163452U CN 201621153776 U CN201621153776 U CN 201621153776U CN 206163452 U CN206163452 U CN 206163452U
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- cold cathode
- cathode
- aperture plate
- emission
- electron
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Abstract
The utility model discloses a banded beam field emissive cathode system of size of receiving a little, surface etching is protruding for isosceles triangle's a series of parallel metal for the cross -section through cooling semiconductor sculpture technique on the cathode material flat board, improves the most advanced electric field strength of prominent transmission, and then improvement emission current intensity and density. Simultaneously, the aperture plate generally is micron or nanometer magnitude apart from cold cathode top, and metal material is chooseed for use to the aperture plate material, and a rectangular mouth or hole are opened to the aperture plate directly over cold cathode emission pointed end for cold cathode emission's electron can pass through, and forms great, the efficient banded beam of electric current. Furthermore, the utility model discloses banded beam field emissive cathode system of size of receiving a little has advantages such as the big and room temperature work of small, instantaneous start -up, current density, is applicable to multiple type of vacuum electron device.
Description
Technical field
The utility model belongs to vacuum electron device technical field, more specifically, is related to travelling-wave tubes, backward wave tube, speed
Adjust used in pipe, gyrotron, free-electron laser, Orotron, the vacuum electron device such as Terahertz master for electron gun
A kind of micro-nano size ribbon-like electron notes field-emissive cathode system.
Background technology
Vacuum electron device is that a class turns electronics note kinetic energy using after high energy electron note and electromagnetic microwave signal interaction
Turn to the power amplifying device of microwave energy, including travelling-wave tubes, klystron, backward wave tube, gyrotron etc..Electron gun is used as vacuum electric
The core component of sub- device, the quality of its launching electronics note has been largely fixed the quality of vacuum electron device performance.
Conventional vacuum electron device is mostly using cylindrical electronics note.In recent years, with the development of science and technology, vacuum electric
Sub- device to higher frequency, higher work(develop, and drive on boldly to Terahertz.However, because size crosses altogether effect, with work frequency
The increase of rate, the size of high-frequency structure will become less and less, and then the electronics dimensioning of its internal transmission is less and less, a side
Electronics note in face is more tiny to cause that space-charge force is stronger, causes Electronic beam focusing difficulty；On the other hand, because current density can not
The unconfined increase of energy, the dc power of vacuum electron device input is reduced with the rising of operating frequency.
In order that vacuum electron device is preferably applied in millimeter wave and Terahertz field, ribbon-like electron note device becomes
One study hotspot.Ribbon-like electron note can transmit bigger electric current, Jin Er great under identical cathode emission current density
Amplitude improves the input direct-current power of device.Secondly, identical electric current is transmitted, the space-charge force of ribbon beam is weak.And banding
Note vacuum device also have the advantages that simple structure, can easily be accommodated with it is integrated.
In conventional vacuum electron device, the negative electrode of electron gun is typically all hot cathode, and the heater in negative electrode is in driving current
In the presence of plus hot cathode, electronics overcomes surface potential barrier to escape into vacuum.Because hot cathode efficiency is low, high energy consumption and size are huge
It is big etc., vacuum electron device is limited to miniaturization and the development of integrated direction, this causes to start to be considered as field emission
To replace hot cathode to launch.
In field emission, when cold cathode surface potential barrier width is compressed to by extra electric field can be compared with electron wavelength
Intend, the tunnel-effect of electronics will be apparent upon, a large amount of electronics are escaped into up to external vacuum ring through surface potential barrier in negative electrode body
Border.Be currently used primarily in display technology field, such as 2005 Southeast China University Wang Qi dragons, it is entitled that " New Low Voltage drives carbon to receive
The research of mitron Field emission displays " paper 1.2 is saved and just disclose in " Field emission displays " a kind of field emission display device,
As shown in figure 1, the taper launch body (emission tip) and grid including glass substrate, conductive electrode and on conductive plate
Pole, by sending with fluorescent screen size identical field emission array, each light-emitting phosphor point corresponds to a Flied emission to electronics
Negative electrode.The cathode current emission is controlled by the voltage on row and column electrode, luminous to carry out line by line, therefore each array cathode
There is electronic beam current of the electron beam equivalent to CRT electron guns.
But the field-emissive cathode of said structure is unsuitable for using vacuum electron device, and one will be burnt when negative electrode long-time is launched
Its taper launch tip is ruined, two is that emission current is not big enough, it is impossible to meet the needs that vacuum electron device is noted to ribbon-like electron.
Utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art, proposes that a kind of micro-nano size ribbon-like electron note field causes
Emitting cathode system, to produce the electronics note of high current, high current density, for vacuum electron device.
To realize above-mentioned utility model purpose, the utility model micro-nano size ribbon-like electron notes field-emissive cathode system,
Including：
One substrate, for fixing；
Characterized in that, also including：
One cold cathode, its material selection metal or silicon, be by cold-cathode material surface etch using semiconductor etching techniques
Section is the series of parallel metal protuberance of isosceles triangle, and projection is the triangular prism that section is formed along extension, and the top of rib is
Cold cathode emission tip, isosceles triangle depth of section and bottom width, all in accordance with design is specifically needed, are micron or nanometer scale, and
The distance of two adjacent triangular prisms and the length of triangular prism, then determine according to emission and required electric current width；
Cold-cathode material flat board lower surface is fixed on upper surface of base plate；
One aperture plate, is aperture plate above the emission tip of cold cathode, and aperture plate is generally micron or nanometer apart from cold cathode top
Magnitude, screen material selects metal material, and aperture plate is opened with its shape to corresponding directly over each emission tip of cold cathode
One rectangular opening or hole so that the electronics of cold cathode emission by aperture plate, and can form ribbon-like electron note.
Apply the voltage lower than cold cathode, i.e. aperture plate on aperture plate and apply negative high voltage as grid, absolute value is less than cold
Magnitude of voltage on negative electrode, then form highfield at cold cathode emission tip, and highfield just compresses the barrier width on cold cathode surface, when
When barrier width is comparable with electron wavelength, clearly, a large amount of electronics in cold cathode body pass through table to the tunnel-effect of electronics
Face potential barrier effusion, forms electric current, and institute's applied voltage difference is bigger, and electric current is bigger.
What the purpose of this utility model was realized in.
The utility model micro-nano size ribbon-like electron notes field-emissive cathode system, by will be cold by semiconductor etching techniques
Cathode material flat board upper surface etching is the series of parallel metal protuberance of isosceles triangle for section, carries high-crowned transmitting point
The electric-field intensity at end, and then improve emission current intensity and density.Meanwhile, aperture plate is generally micron or receives apart from cold cathode top
Rice magnitude, screen material selects metal material, and aperture plate opens a rectangular opening or hole directly over cold cathode emission tip so that cold
The electronics of emission of cathode can pass through, and form that electric current is larger, efficient ribbon-like electron note.Additionally, the utility model micro-nano
Size ribbon-like electron note field-emissive cathode system has the advantages that small volume, instantaneous starting, current density greatly and working and room temperature,
Suitable for multiple types vacuum electron device.
Description of the drawings
Fig. 1 is a kind of structural representation of field emission display device in prior art；
Fig. 2 is a kind of specific embodiment structure of the utility model micro-nano size ribbon-like electron note field-emissive cathode system
Schematic diagram；
Fig. 3 is the ribbon-like electron of micro-nano size shown in Fig. 2 note field-emissive cathode system monocycle modular construction schematic diagram；
Fig. 4 is monocycle component Each part schematic diagram described in Fig. 3, wherein (a) shows for monocycle glass basal plate structure
It is intended to structural representation, the structural representation that (c) is monocycle grid of figure, (b) for monocycle cold cathode.
Specific embodiment
Specific embodiment of the present utility model is described below in conjunction with the accompanying drawings, so as to those skilled in the art more
Understand the utility model well.Requiring particular attention is that, in the following description, when known function and design it is detailed
Perhaps, when description can desalinate main contents of the present utility model, these descriptions will be ignored here.
Traditional vacuum electron device typically adopts hot cathode emission system as electron emission source, but with vacuum device
Frequency is to the development of millimeter wave and Terahertz frequency range, and the size of vacuum electron device is less and less so that hot-cathode electric light
The difficulty of processing of system is increased, in addition hot cathode also there are problems that complex structure, power consumption it is high and.Another aspect root
It is directly proportional to electric current according to vacuum electron device power output and understands, realizes the high-power output of vacuum electron device, electronics note
Electric current should be the bigger the better.For an above-mentioned difficult problem, the utility model devises a kind of micro-nano size ribbon-like electron note field emission
Cathod system, can produce high current, the ribbon-like electron of high current density note, to adapt to miniaturization and the collection of vacuum electron device
Cheng Hua, and improve the performance of vacuum electron device.
Fig. 2 is a kind of specific embodiment structure of the utility model micro-nano size ribbon-like electron note field-emissive cathode system
Schematic diagram.
In the present embodiment, as shown in Fig. 2 the utility model micro-nano size ribbon-like electron note field-emissive cathode system bag
Include substrate 1, cold cathode 2 and aperture plate 3.What is be given in Fig. 2 is the portion that micro-nano size ribbon-like electron notes field-emissive cathode system
Divide the cycle (two neighboring cold cathode emission tip is a cycle), periodicity is designed according to specific needs.
Substrate 1 is a block-shaped plate for cuboid, and material is metal, glass, silicon chip, sapphire, diamond or quartz,
Main Function is for fixation.
The conductor material such as the material selection metal of cold cathode 2 or silicon, is put down cold-cathode material using semiconductor etching techniques
Plate upper surface etching is the series of parallel metal protuberance that section is isosceles triangle, and projection is that section edge extends the triangle for being formed
Rib, the top of rib is cold cathode emission tip, and isosceles triangle depth of section and bottom width, all in accordance with design is specifically needed, are micron
Or nanometer scale, and the distance of two adjacent triangular prisms and the length of triangular prism, then according to emission and required
Electric current width is determined.Cold-cathode material flat board lower surface is fixed on the upper surface of substrate 1.
It is aperture plate 3 above the emission tip of cold cathode 2, aperture plate 3 is micron or nanometer scale, aperture plate apart from cold cathode top
3 material selection metal material, aperture plate opens one with its (emission tip) shape directly over each emission tip of cold cathode 2
To corresponding rectangular opening or hole so that the electronics of the transmitting of cold cathode 2 by aperture plate 3, and can form ribbon-like electron note.
Apply the voltage lower than cold cathode 2, i.e. aperture plate 3 on aperture plate 3 as negative high voltage on grid, absolute value is less than cold
Magnitude of voltage on negative electrode 2, then form highfield in the emission tip of cold cathode 2, and highfield just compresses the barrier width on cold cathode surface,
When barrier width and electron wavelength are comparable, clearly, a large amount of electronics in cold cathode body 2 are passed through the tunnel-effect of electronics
Surface potential barrier is escaped, and forms electric current, and institute's applied voltage difference is bigger, and electric current is bigger.
In the utility model, cold cathode etching is the triangular prism that section is isosceles triangle, primarily to improving prominent
The electric-field intensity of the emission tip for rising, and then improve emission.
Further say, the utility model due to adopt section for isosceles triangle triangular prism as field-emissive cathode
Body, and the employing taper field-emissive cathode body of prior art is different, taper launch body emission tip electric-field intensity is high, easily
In transmitting, but emission current it is big when, easily burn, secondly taper launch body adopts array format, emitter in unit area
Limited amount, emission is low.And the utility model proposes triangular prism field-emissive cathode body, its emission tip electric field
Intensity is also high, it is easy to launch, and, as emitter, is equal to the taper launch body of very high density, institute due to using triangular prism
Female conical polar body hundreds times are generally with emission, and when emission current is big, it is not easy to burn, therefore, it is suitable for
In the vacuum electron device of miniaturization.
Additionally, this patent the utility model micro-nano size ribbon-like electron note field-emissive cathode system also have small volume,
Simple structure, easy processing, low production cost, threshold field strength is low, emission is big, long service life advantage.Relative to
Hot cathode, the utility model proposes section for isosceles triangle ribbon beam field-emissive cathode not only emission
Height, and need not heating, can instantaneous transmission, also there is small volume, room temperature condition to work, it is easy to be miniaturized, integrated excellent
Point.
In the present embodiment, substrate 1 is glass substrate, the conductive electrode of cold cathode 2, the width of grid rectangular opening, length,
The height of emission tip of height and cold cathode 2, bottom length and width, structural cycle quantity can be entered according to actual conditions
Row adjustment.
In the present embodiment, as shown in Figure 3, Figure 4, for a monocycle, glass substrate 1 be rectangular structure, its chi
It is very little to be：4 μm of length, 1 μm of width, 0.5 μm of height；The bottom of cold cathode 2 is the conductive electrode of rectangular structure, and its size is length
3 μm of degree, 1 μm of width, 0.5 μm of height, the top of cold cathode 2 is triangular prism, and its size is 3 μm of length, 1 μm of bottom width, high by 2
μm, 3.1 μm of the grid hole length of aperture plate 3 is wide 0.05 μm, high 0.1 μm.
Although being described to the illustrative specific embodiment of the utility model above, in order to the art
Technical staff understands the utility model, it should be apparent that the utility model is not limited to the scope of specific embodiment, to this technology
For the those of ordinary skill in field, as long as the essence of the present utility model that various change is limited and determined in appended claim
In god and scope, these changes are it will be apparent that all utilize the innovation and creation of the utility model design in the row of protection.
Claims (2)
1. a kind of micro-nano size ribbon-like electron notes field-emissive cathode system, including：
One substrate, for fixing；
Characterized in that, also including：
One cold cathode, its material selection metal or silicon, are etched cold-cathode material flat board upper surface using semiconductor etching techniques
For the series of parallel metal protuberance that section is isosceles triangle, projection is section along the triangular prism for extending formation, the top of rib
For cold cathode emission tip, isosceles triangle depth of section and bottom width, all in accordance with design is specifically needed, are micron or nanometer scale,
And the distance and the length of triangular prism of two adjacent triangular prisms, then determined according to emission and required electric current width
It is fixed；
Cold-cathode material flat board lower surface is fixed on upper surface of base plate；
One aperture plate, is aperture plate above the emission tip of cold cathode, and aperture plate is generally micron or nanometer scale apart from cold cathode top,
Screen material selects metal material, and aperture plate opens a square with its shape to corresponding directly over each emission tip of cold cathode
Shape mouth or hole so that the electronics of cold cathode emission by aperture plate, and can form ribbon-like electron note；
Apply the voltage lower than cold cathode, i.e. aperture plate on aperture plate and apply negative high voltage as grid, absolute value is less than cold cathode
Upper magnitude of voltage, then form highfield at cold cathode emission tip, and highfield just compresses the barrier width on cold cathode surface, works as potential barrier
When width is comparable with electron wavelength, clearly, a large amount of electronics in cold cathode body pass through surface potential to the tunnel-effect of electronics
Effusion is built, electric current is formed, institute's applied voltage difference is bigger, and electric current is bigger.
2. cathod system according to claim 1, it is characterised in that described baseplate material be metal, glass, silicon chip,
Sapphire, diamond or quartz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621153776.8U CN206163452U (en) | 2016-10-31 | 2016-10-31 | Banded beam field emissive cathode system of size of receiving a little |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621153776.8U CN206163452U (en) | 2016-10-31 | 2016-10-31 | Banded beam field emissive cathode system of size of receiving a little |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206163452U true CN206163452U (en) | 2017-05-10 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621153776.8U Withdrawn - After Issue CN206163452U (en) | 2016-10-31 | 2016-10-31 | Banded beam field emissive cathode system of size of receiving a little |
Country Status (1)
| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106328462A (en) * | 2016-10-31 | 2017-01-11 | 电子科技大学 | Micro-nano size sheet electron beam field emission cathode system |
-
2016
- 2016-10-31 CN CN201621153776.8U patent/CN206163452U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106328462A (en) * | 2016-10-31 | 2017-01-11 | 电子科技大学 | Micro-nano size sheet electron beam field emission cathode system |
| CN106328462B (en) * | 2016-10-31 | 2018-08-07 | 电子科技大学 | A kind of micro-nano size ribbon-like electron note field-emissive cathode system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20170510 Effective date of abandoning: 20180807 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20170510 Effective date of abandoning: 20180807 |