CN206148198U - Anti arc MOA piezoresistor of insulating magnetic pole spiral of dielectric - Google Patents

Anti arc MOA piezoresistor of insulating magnetic pole spiral of dielectric Download PDF

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CN206148198U
CN206148198U CN201621061010.7U CN201621061010U CN206148198U CN 206148198 U CN206148198 U CN 206148198U CN 201621061010 U CN201621061010 U CN 201621061010U CN 206148198 U CN206148198 U CN 206148198U
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spiral
arc
moa
magnetic pole
shaped electrode
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肖小驹
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Shenzhen Chenju Electronic Technology Co Ltd
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Shenzhen Chenju Electronic Technology Co Ltd
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Abstract

The utility model discloses an anti arc MOA piezoresistor of insulating magnetic pole spiral of dielectric is equipped with the electrode on piezoresistor's the chip body, the electrode adopts the linear electrode of spiral. Spiral chip experiment is in the experiment in 50~180 DEG C of intervals, and the phenomenon of drawing the arc to burn of the naked light did not appear, not coming out once takes place, does spiral MOV not only have highly by 3 4 energy absorption capability doubly can last the ability of lasting MOV's tensile arc burning moreover, be it 1.7 of sharp L formula to last the anti overvoltage time 2.0 doubly, 150 DEG C ~174 DEG C, the temperature range that piezo -resistor that the industry thinks usually can bear has been surpassed.

Description

The anti-arc MOA piezoresistors of dielectric insulation magnetic pole spiral
Technical field
This utility model discloses a kind of piezoresistor, and anti-arc MOA is pressure-sensitive for particularly a kind of dielectric insulation magnetic pole spiral Resistor.
Background technology
The problem of MOV arcings always pressure-sensitive manufacturing headache on fire, its arcing main cause on fire is:
The starting current of varistor is all can just to start work/arcing under milliampere mA ranks, and electrical equipment road invading the interior Operating current when all of electric fuse in face disconnects the disconnection of fuse is all just to start to disconnect protection under ampere A ranks, therefore And circuit itself produce switching overvoltage (the circuit such as frequency changer circuit that especially inductive circuit vacuum is cut-off in circuit makes which more Easily produce) lasting resonance potential is formed, after it can just make varistor startup work, the power current of circuit persistently adds On varistor, when the tolerance range that the power frequency more than varistor is tolerated, varistor under milliampere rank can be caused to start Arcing is on fire, and at 1500-1600 DEG C, arc central temperature reaches 2500-3500 DEG C to the outer temperature of its arc, other protection devices in circuit Have little time reaction at all, so as to bring huge property loss even threat to life, this arcing is on fire also not to include overall electricity The impact part of the overvoltage overcurrent (thunder and lightning attacks sensing directly) in the power system of device external environment condition.
Under surge pulse, due to the impact of Kelvin effect, common pressure-sensitive electric current only passes through in chip outer annular region, core Piece center becomes blank, and the electric current throughput of overall chip greatly reduces, so that the electrical property of chip is not integrally able to Give full play to, at the same also buried arcing it is on fire the drawbacks of.
A variety of drawback displays that the irrational straight line L formulas design of plain conductor electrode of traditional MOV brings are as follows:
1) electric current of circuit can not steadily be drawn out to chip electrode surface, form current stress impact in L electrodes corner, L electrode tips, due to sophisticated field effect, the electric field intensity at this position is higher.
2) under power frequency, the painting silver layer horizontal current density of chip electrode is uneven, causes chip electrode face temperature to differ.In Center portion position electric current density is higher than peripheral part;Generally thermal breakdown just mostly occurs at this position;
3) when by electric current, straight line L formulas metallic conductor can produce flatulence of heat type deformation, and conductor electrode expansion is accumulated along wire, The painting silver layer of chip is pullled, is damaged.
4) it is also bad to the thermal diffusivity of chip.
5) lead ends are arranged in chip edge in opening, it is easy to form chip arcing near the lead ends and wear Hole.
Utility model content
The problem of arcing is produced easily for piezoresistor of the prior art mentioned above, this utility model is provided A kind of dielectric insulation magnetic pole spiral anti-arc MOA piezoresistors, which adopts spiral yarn shaped electrode, can effectively solving arcing Problem.
This utility model solves the technical scheme of its technical problem employing:A kind of anti-arc of dielectric insulation magnetic pole spiral MOA piezoresistors, the chip body of piezoresistor are provided with electrode, and electrode adopts spiral yarn shaped electrode.
This utility model solves the technical scheme of its technical problem employing and further comprises:
Described chip body both sides are provided with painting silver layer, and spiral yarn shaped electrode is fixedly installed on chip body both sides and must apply silver On layer.
Described spiral yarn shaped electrode is arranged on painting silver layer by the way of welding.
Described spiral yarn shaped electrode is in chip body embedded set.
The lead of described spiral yarn shaped electrode be arranged at chip body edge placement or chip body center At position, or the optional position being arranged in spiral yarn shaped electrode.
Described spiral yarn shaped electrode is using plane equiangular helical spiral, plane constant speed helix or without the double spiral shells for disconnecting termination Spin line.
The spiral yarn shaped electrode court of described chip body both sides rotates in the same direction, or revolves towards different directions Turn.
Described spiral yarn shaped electrode adopts hollow metal helix or adopts flat metal helical lead wire.
The beneficial effects of the utility model are:In accumulative dash current experiment, spiral chip seldom bursts, screw type Invalid temperature is:106C, during power-frequency voltage tolerance pressure rise test weber (U-t) characteristic thermal breakdown is tested with electrochemical breakdown, spiral shell Rotation lead can bear higher power-frequency voltage in boosting test, the high 10V-20V compared with straight wire varistor, pressurization ratio Rap (chargeability) reaches as high as 1.33 times, and the maximum temperature that screw type electrode bears is in 112-174C scopes, and has no that arcing rises Fire, simply lead fall chip parameter completely without.Screw type array experiment did not occur in 50~180 DEG C of interval experiments Naked light, do not have out the phenomenon of arcing burning once to occur, spiral MOV only high 3-4 times of energy absorption capabilities, and And the ability that the tension arc of lasting MOV burns can be continued, the lasting anti overvoltage time is 1.7-2.0 times of straight line L formulas, 150 DEG C~174 DEG C, completely outstripped the effectiveness of the scope magnetic spiral technology of the bearing temperature of industry varistor.
This utility model is described further below in conjunction with the drawings and specific embodiments.
Description of the drawings
Fig. 1 is one dimensional structure diagram of this utility model embodiment.
Fig. 2 is two dimensional structure diagram of this utility model embodiment.
Fig. 3 is electronic devices and components body surface CURRENT DISTRIBUTION schematic diagram when this utility model is turned on.
Fig. 4 is chip body surface CURRENT DISTRIBUTION schematic diagram when varistor of the prior art is turned on.
CURRENT DISTRIBUTION schematic diagram in electronic devices and components body when Fig. 5 is this utility model conducting.
CURRENT DISTRIBUTION schematic diagram in chip body when Fig. 6 is varistor of the prior art conducting.
Fig. 7 is straight line L formula electronic devices and components current conducting paths of the prior art and length comparison diagram.
Current conducting path and length comparison diagram of the Fig. 8 for the spiral electronic devices and components in this utility model.
In figure, 1- electronic devices and components bodies, 2- apply silver layer, the spiral yarn shaped electrodes of 3-, the distribution of 4- electronics.
Specific embodiment
The present embodiment is this utility model preferred implementation, and other all its principles and basic structure are identical with the present embodiment Or it is approximate, within this utility model protection domain.
Accompanying drawing 1 is refer to, the anti-arc MOA piezoresistors of dielectric insulation magnetic pole spiral in this utility model mainly include Chip body 1 and spiral yarn shaped electrode 3, spiral yarn shaped electrode 3 are fixedly installed on 1 both sides of chip body, in the present embodiment, in core 1 both sides of piece body are provided with painting silver layer 2, and spiral yarn shaped electrode 3 is fixedly installed on painting silver layer 2, in the present embodiment, spiral yarn shaped electricity Pole 3 is arranged on painting silver layer 2 by the way of welding, and when being embodied as, spiral yarn shaped electrode 3 can also be in chip body 1 It is embedding.
In the present embodiment, the lead of spiral yarn shaped electrode 3 is arranged on the center position of chip body 1.
The set-up mode of spiral yarn shaped electrode 3 is including but not limited to following several:
Embodiment one:In the present embodiment, spiral yarn shaped electrode 3 adopts plane equiangular helical spiral;
Embodiment two:In the present embodiment, spiral yarn shaped electrode 3 adopts plane constant speed helix;
Embodiment three:In the present embodiment, spiral yarn shaped electrode 3 is using without the bifilar helix for disconnecting termination.
In this utility model, the spiral yarn shaped electrode 3 of 1 both sides of chip body is arranged on towards rotating in the same direction, or Rotate towards different directions.In the present embodiment, spiral yarn shaped electrode 3 adopts hollow metal helix or adopts flat metal spiral shell Rotation lead.In the present embodiment, the exit of spiral yarn shaped electrode 3 is arranged at 1 edge placement of chip body, when being embodied as, The exit of spiral yarn shaped electrode 3 can also be arranged on the center of chip body 1, or in spiral yarn shaped electrode 3 Optional position.
Accompanying drawing 2 be refer to accompanying drawing 5, can be overcome by chip body surface and internal CURRENT DISTRIBUTION when conducting can be seen in figure Kelvin effect.Accompanying drawing 6 and accompanying drawing 7 are refer to, is compared with length with the current conducting path of spiral MOV by straight line L formulas MOV Understand, it is clear that spiral MOV paths L ' N>>Path L of straight line L formulas MOV ' N length, in actual size of components In, radius R>>Thickness H, this is also spiral MOV in impact experiment 8/20us and power frequency pressure rise test the reason for outstanding representation One of.
When two metals contact with each other, real contact point only has the point of minority in actual pick-up current, on the contact point Flowing, the mottle of these actual contacts are referred to as conductive mottle, and when metal does split movement, contact area is reduced, then Also gradually increase in the contact point electric current of contact condition in addition, i.e., electric lines of force starts to shrink concentration on the contact point, must produce Additional resistance, causes contact point metal intense heat, metal to be melted into liquid metal bridge before this, and then a part becomes steam and enters Enter in contact gap, exacerbate the heat emission of electronics, meanwhile, the electric field intensity between contact can become very high, and cathode surface will be produced Raw high electric field launches both, launches the substantial amounts of electronics for being formed and ionizes in the presence of electric field, more electronics and cation Electronics releases energy into anode and positive charge are compound, and heating anode cation moves towards negative electrode, on the one hand produce high electric field and Bombarding cathode, on the other hand obtaining electronics from negative electrode carries out the compound heating negative electrode that releases energy, to maintain the heat emission of electronics, separately Outer a part of cation and electronics are combined in the arc of gap, and the energy of releasing is radiated in the form of light, increase gas particle Warm-up movement, as a result, gas temperature more and more higher in gap, electrical conductivity are increasing, thus voltage drop (the wet arc at arc gap two ends Voltage) less and less, the number of charged particles that produces in gap and compound equal with the number of charged particles of diffusion disappearance When, process enters steady statue, now arc stability burning.
1st, its major function of varistor is surge impact of releasing, and overvoltage blood pressure lowering is restricted to protected vigour part model In enclosing, itself also energy absorption, for MOV, energy absorption capability is which is only second to the second important of nonlinear parameter Performance, which measures the size of energy absorption with Jcm-3, and the level of present varistor energy absorption regards pulse persistance , probably in 200~250Jcm-3, the temperature for making varistor body of the energy absorption is not over 100 for the difference of time DEG C, actual temp is relevant with the energy density of varistor, and using 130 DEG C (about 403K) as the limit temperature of varistor Degree, it is possible to calculate the total absorbability of varistor, referred to as " enthalpy ", if calculated with room temperature play 130 magnetic its suction Receipts ability is 612J.cm-3, and definitely reaching the standard grade as 1215J.cm-3 for its absorbability is calculated with absolute temperature.
2nd, lifting more than pipette three times:From the point of view of the boosting result data tested, when MOV temperature is T=165 DEG C When, its correspondence energy absorption ability is 700Jm-3, so the energy absorption capability of spiral MOV is the energy of traditional line MOV Energy absorption capability:700J/250-200J=2.8-3.5 again.
3rd, thermally stimulated current (TSC) result of the voltage-sensitive ceramic before and after applied voltage effect is the strong of ion migration theory Evidence, Jing after DC voltage effect, TSC peak of curve temperature occurs in 160-170 DEG C, with the increase of electric field, peak temperature Move to high-temperature direction, unit volume TSC accumulation maximum temperature is 177 DEG C, and electric current density and electric field intensity are all presented thereafter Downward trend.
4th, extinguishing voltage is the most important design parameter foundation of spark gap, for example:It is using how many unit gaps, how many individual Valve block is to select according to extinguishing voltage rather than according to its amount voltage.
Extinguishing voltage should be more than the maximum power-frequency voltage that spark gap mount point is likely to occur, in neutral point effective grounding electricity Lu Zhong, in fact it could happen that maximum power-frequency voltage only equal to specified (line) voltage of electrical network 80%;And non-effective electricity is connect electrically putting In electrical network, occur to remain to continue to run with during a phase earth fault, but other two voltage-to-grounds for perfecting phase can be upgraded to line voltage, Such as:The now action because of thunderbolt of spark gap on this is biphase, the maximum power-frequency voltage acted on above it will be equal to the electrical network volume The 100%~110% of the voltage of fixed (line).
Rap is compared in the pressurization said in convention:
Helical structure and straight line L structures be all adopt be all the similar same specification of the same manufacturer of random choose with batch The product of secondary chip manufacturing, on the breakdown problem (electrochemical breakdown) of the solid dielectric of dielectric insulation, varistor is arrived During the power frequency tolerance 1.12-1.13Um of varistor, that can power frequency stability occur arcing after one minute is on fireQuality one The power frequency of a little varistors is resistance to be subject to:(Rap is compared in pressurization to 1.15-1.18Um:Um is maximum continue alternate current operation crest voltage with The ratio of pressure sensitive voltage Un).
By reason, should not there is the unexpected phenomenon that entirely different, difference is big, run in the opposite direction.And be people always The electric current arcing of most headache is disappeared, and in electronic circuit, when cut-offfing closure between metallic conductor or during loose contact, electric current can draw The arc temperature that arc moment causes at 1500 DEG C~more than 1600 DEG C, arc central temperature at least at 2000 DEG C~more than 3000 DEG C, Therefore the various disasters for causing are many with loss, and serious harm is to the life security of people.
In the actual verification of pressure rise test, MOV shell temperatures have all crossed 130 DEG C of its limiting temperature to spiral pressure-sensitive product Line, all to 160~170 DEG C of phenomenons for the burning of arcing naked light all do not occur, and straight line conductor electrode structure chip is reached 55 DEG C~60 DEG C or so this rule temperature lines about 10 seconds afterwards all can 100% arcing generation vigorous combustion on fire.
5th, its unit for electrical property parameters after 150-170 DEG C of experiment, is being tested through the chip (spiral) of power frequency experiment When, completely without, then the dielectric composition structure at least provable chip has occurred that expendable transformation, i.e. electrolyte Conductor from dielectric strength to low insulation intensity development, it is impossible to be transformation that dielectric strength is become better, this point is kept in energy Permanent angle is to say not past, not arcings of variation, the good orthoscopic all arcings of script dielectric insulation, then certainly Can say that the appearance of tension arc ability has other factor in action certainly, after excluding the no condition of change, there was only screw electrode Change, i.e., it is non-it do not belong to, it is most important discovery work experiment in windfall find tension arc.
First, helically line type structure is welded together with chip silver layer face for metal lead wire conductor electrode part, the structure Metallic conductor, when a flow of electric current is passed through it, generate the axial magnetic field and radial electric field perpendicular to chip electrode surface, axial magnetic The active force of the Lorentz for producing so that the electronics in chip body is able to the mode that spiral rotating advances and focus on and moves, its Radius of turn more small magnetic field is bigger, advance pitch, focusing distance all respectively be subject to electrode in electric current flowing size produce when The impact of varying magnetic field and time-varying electric field.
Under communicational aspects, the rotary motion under axial magnetic field effect of the electronics in chip body is advanced, and electronics is entirely moved Approach is extended, and electric current line becomes thinner longer, even if forming electric current camber line, because which is carefully easy to be blown by magnetic field very much.
And practical situation, the chip axial magnetic field that streaming current is formed in spiral metallic conductor structure, and chip The electric field of power-on and power-off pole-face, the electronics of collective effect movement conduction in chip so as to obtain energy, does in the chips and rotates (radius r) accelerates (v) to advance (stroke).The dynamic motion of (focal length) moment change is focused on, during this, its moving radius is got over Little electronics, its energy are higher, and these have a moving electron of high-energy, and the extra acquisition of higher energy, is origin again Lead from the magnetic field in chip conductors and electric field, the foundation of its magnetic field and electric field and size, and the spiral depending on chip electrode The change of streaming current size in this electrode structure of body and this structure, helix has inductance type property, innately to electric current Very sensitive inhibition of size variation.
If electric current wants arcing to shape, it is necessary to obtain energy to change the size of its rotatable line radius from electric current, In addition, lead ends central area loaarithmic curve connotation, what its center representative was unlimited may be close to the center of energy, that The electronics of arcing is wanted also it is necessary to have unlimited energy is getting through the starting the arc path of two metal terminations, it is clear that this is in list One energy point of view sees its impossibility and limitation.
Furthermore, the lead ends of spiral form arrange termination in central area, are ad infinitum close to chip center's point, then Think that in metal lead wire termination the electronics of arcing also must there will be infinitesimal radius of turn r, that is to say, that the electronics has to tool There is unlimited energy, it is clear that more energy are additionally obtained, and it is less easy to realize under helical structure.

Claims (8)

1. a kind of anti-arc MOA piezoresistors of dielectric insulation magnetic pole spiral, is characterized in that:The chip of described piezoresistor Body is provided with electrode, and electrode adopts spiral yarn shaped electrode.
2. the anti-arc MOA piezoresistors of dielectric insulation magnetic pole spiral according to claim 1, is characterized in that:Described Chip body both sides are provided with painting silver layer, and spiral yarn shaped electrode is fixedly installed on chip body both sides and must apply on silver layer.
3. the anti-arc MOA piezoresistors of dielectric insulation magnetic pole spiral according to claim 2, is characterized in that:Described Spiral yarn shaped electrode is arranged on painting silver layer by the way of welding.
4. the anti-arc MOA piezoresistors of dielectric insulation magnetic pole spiral according to claim 1, is characterized in that:Described Spiral yarn shaped electrode is in chip body embedded set.
5. the anti-arc MOA piezoresistors of dielectric insulation magnetic pole spiral according to claim 1, is characterized in that:Described The lead of spiral yarn shaped electrode be arranged at chip body edge placement or chip body center position, or be arranged on Optional position in spiral yarn shaped electrode.
6. anti-arc MOA piezoresistors of dielectric insulation magnetic pole spiral as claimed in any of claims 1 to 5, its It is characterized in that:Described spiral yarn shaped electrode is using plane equiangular helical spiral, plane constant speed helix or without the double spiral shells for disconnecting termination Spin line.
7. anti-arc MOA piezoresistors of dielectric insulation magnetic pole spiral as claimed in any of claims 1 to 5, its It is characterized in that:The spiral yarn shaped electrode court of described chip body both sides rotates in the same direction, or rotates towards different directions.
8. anti-arc MOA piezoresistors of dielectric insulation magnetic pole spiral as claimed in any of claims 1 to 5, its It is characterized in that:Described spiral yarn shaped electrode adopts hollow metal helix or adopts flat metal helical lead wire.
CN201621061010.7U 2016-09-19 2016-09-19 Anti arc MOA piezoresistor of insulating magnetic pole spiral of dielectric Active CN206148198U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018049669A1 (en) * 2016-09-19 2018-03-22 深圳市辰驹电子科技有限公司 Versatile pulse-based technique for packaging helical magnetic electrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018049669A1 (en) * 2016-09-19 2018-03-22 深圳市辰驹电子科技有限公司 Versatile pulse-based technique for packaging helical magnetic electrode

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