CN100470218C - Contact type temperature sensor for high and medium voltage switch cabinet - Google Patents
Contact type temperature sensor for high and medium voltage switch cabinet Download PDFInfo
- Publication number
- CN100470218C CN100470218C CNB2006100507933A CN200610050793A CN100470218C CN 100470218 C CN100470218 C CN 100470218C CN B2006100507933 A CNB2006100507933 A CN B2006100507933A CN 200610050793 A CN200610050793 A CN 200610050793A CN 100470218 C CN100470218 C CN 100470218C
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- CN
- China
- Prior art keywords
- voltage switch
- high voltage
- epoxy resin
- thermistor probe
- temperature sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The invention discloses a middle-high voltage switch tank contacting temperature sensor. A thermistor probe is installed on the surface of an insulated heat conducting base; the thermistor probe with epoxy resin covered around is fixed with the insulated heat conducting base, wherein the epoxy resin has a metal shielding shell covered on it, the lead wires of the thermistor probe go through the hole on the metal shielding shell, the insulated heat conducting base is equipped with an installation hole. The Pt resistor packed with epoxy resin can sense temperature entirely and uniformly. The base made from nanometer material AIN has good heat conductivity and reliable electricity insulation. The probe shielded with iron shell can shield electromagnetic disturbance in the middle-high voltage switch tank. The invention can be applied in the middle-high voltage electronic switch tank working between 10kv and 35kv.
Description
Technical field
The present invention relates to temperature sensor, relate in particular to a kind of middle-high voltage switch contact type temperature sensor.
Background technology
The safe operation of electric system is very important, along with modern electric to high voltage, big unit, jumbo developing rapidly, more and more higher to the requirement of power system power supply reliability.The factor that influences power system security is a lot, and one of them importance is the safe operation problem of electrical equipment self.Because most electrical equipments adopts enclosed construction, radiating effect is poor, and heat accumulation is big, and be in high voltage for a long time, the duty of big electric current, its result causes heat to assemble aggravation, temperature rise directly threatens the electric insulation of electrical equipment.To totally-enclosed high-voltage switch electric appliance, the monitoring problem of its switch contact temperature just becomes increasingly conspicuous.
Summary of the invention
The object of the present invention is to provide structure simpler, a kind of middle-high voltage switch contact type temperature sensor that measuring accuracy is higher.
The technical solution adopted for the present invention to solve the technical problems is: at insulation heat-transfer foundation support upper surface thermistor probe is housed, thermistor probe wraps up epoxy resin all around and is consolidated with the insulation heat-transfer foundation support, epoxy resin is covered with the metallic shield shell, the extension line of thermistor probe passes metallic shield shell aperture, is provided with mounting hole on the insulation heat-transfer foundation support.
The beneficial effect that the present invention has is: with the epoxy resin wrapping and encapsulating, make thermistor probe thermistor probe to sense temperature more comprehensively evenly.Select for use novel nano-material ALN (aluminium nitride) as pedestal,, do not influence the measurement of temperature again because its good heat conductivity and reliable electrical insulating property had both well solved the High-Voltage Insulation problem.Probe is shrouded by the iron shell, can well shield electromagnetic interference (EMI) serious in the middle-high voltage switch, guarantees measuring reliability and accuracy, and the present invention can be applicable to the mesohigh power switch cabinet that operating voltage is 10kv～35kv.。
Description of drawings
Accompanying drawing 1 is a structural representation of the present invention.
Accompanying drawing 2 is vertical views of accompanying drawing 1.
Among the figure: 1, insulation heat-transfer foundation support, 2, mounting hole, 3, thermistor probe, 4, epoxy resin, 5, the metallic shield shell.
Embodiment
Shown in accompanying drawing 1, accompanying drawing 2, at insulation heat-transfer foundation support 1 upper surface thermistor probe 3 is housed, thermistor probe 3 wraps up epoxy resin 4 all around and is consolidated with insulation heat-transfer foundation support 1, epoxy resin 4 is covered with metallic shield shell 5, the extension line of thermistor probe 3 passes metallic shield shell 5 apertures, is provided with mounting hole 2 on insulation heat-transfer foundation support 1.
Described insulation heat-transfer foundation support 1 is a nano material aluminium nitride ceramics pedestal.
Described thermistor probe 3 is the Pt thermistor probe.
The present invention includes probe segment, probe cassette part.Probe adopts the form of epoxy resin parcel Pt resistance, and epoxy resin is heated to molten state, all around around being cast on the Pt resistance, treats behind the normal temperature fixedly, forms the probe of integral type.Probe cassette mainly is made up of pedestal 1 and metallic shield shell 5.Pedestal adopts nano material ALN (aluminium nitride), this material adopts the nanometer technology processing and manufacturing, advantages such as avirulence has good heat conductivity, reliably electrical insulating property, low specific inductive capacity and dielectric loss, high intensity and be convenient to processing and manufacturing, and the material thermal conductivity temperature influence is little.Thermistor adopts SMD Pt resistance, and this thermal resistance has that volume is little, and thermal inertia is little, and temperature-responsive is fast, and long-time stability are fine, the high characteristics of precision in the wide temperature range.Metallic shield shell 5 adopts ferrimagnet, the inner serious electromagnetic interference (EMI) of shielding middle-high voltage switch.The extension line of probe passes the aperture at metal shielding top, receives signal processing circuit, carries out temperature acquisition.
Above-mentioned embodiment is used for the present invention that explains, rather than limits the invention, and in the protection domain of spirit of the present invention and claim, any modification and change to the present invention makes all fall into protection scope of the present invention.
Claims (3)
1, a kind of middle-high voltage switch contact type temperature sensor, it is characterized in that: thermistor probe (3) is housed at insulation heat-transfer foundation support (1) upper surface, thermistor probe (3) wraps up epoxy resin (4) all around and is consolidated with insulation heat-transfer foundation support (1), epoxy resin (4) is covered with metallic shield shell (5), the extension line of thermistor probe (3) passes metallic shield shell (5) aperture, is provided with mounting hole (2) on insulation heat-transfer foundation support (1).
2, a kind of middle-high voltage switch contact type temperature sensor according to claim 1 is characterized in that: described insulation heat-transfer foundation support (1) is a nano material aluminium nitride ceramics pedestal.
3, a kind of middle-high voltage switch contact type temperature sensor according to claim 1 is characterized in that: described thermistor probe (3) is the Pt thermistor probe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100507933A CN100470218C (en) | 2006-05-17 | 2006-05-17 | Contact type temperature sensor for high and medium voltage switch cabinet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100507933A CN100470218C (en) | 2006-05-17 | 2006-05-17 | Contact type temperature sensor for high and medium voltage switch cabinet |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1877272A CN1877272A (en) | 2006-12-13 |
| CN100470218C true CN100470218C (en) | 2009-03-18 |
Family
ID=37509770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100507933A Expired - Fee Related CN100470218C (en) | 2006-05-17 | 2006-05-17 | Contact type temperature sensor for high and medium voltage switch cabinet |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100470218C (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101464192B (en) * | 2008-02-02 | 2011-01-12 | 杨志强 | Temperature measuring ring for switch cabinet contact |
| JP2010051141A (en) * | 2008-08-25 | 2010-03-04 | Panasonic Corp | Electric motor with position detector |
| US8981945B2 (en) | 2009-07-08 | 2015-03-17 | Abb Research Ltd. | Bus condition monitoring system |
| CN101894904B (en) * | 2010-07-15 | 2011-12-28 | 电子科技大学 | Metal-base film thermocouple and preparation method thereof |
| CN102522270A (en) * | 2011-12-16 | 2012-06-27 | 张健 | Power supply switching device with heat protection device of main contact terminal circuit |
| CN103277651B (en) * | 2013-06-13 | 2016-04-06 | 新乡学院 | A kind of base of ceramic for high-temperature thermal detection |
| CN103411726B (en) * | 2013-07-26 | 2015-10-07 | 上海俊乐制冷自控元件有限公司 | A kind of pressure unit |
-
2006
- 2006-05-17 CN CNB2006100507933A patent/CN100470218C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1877272A (en) | 2006-12-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090318 Termination date: 20120517 |