CN206148197U - All -round pulse MOA piezoresistor of spiral shell rotating magnetic field electrode encapsulation - Google Patents

All -round pulse MOA piezoresistor of spiral shell rotating magnetic field electrode encapsulation Download PDF

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Publication number
CN206148197U
CN206148197U CN201621062968.8U CN201621062968U CN206148197U CN 206148197 U CN206148197 U CN 206148197U CN 201621062968 U CN201621062968 U CN 201621062968U CN 206148197 U CN206148197 U CN 206148197U
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spiral
moa
chip body
yarn shaped
shaped electrode
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CN201621062968.8U
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肖小驹
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Shenzhen Chenju Electronic Technology Co Ltd
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Shenzhen Chenju Electronic Technology Co Ltd
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Abstract

The utility model discloses an all -round pulse MOA piezoresistor of spiral shell rotating magnetic field electrode encapsulation, piezoresistor includes the linear electrode of chip body and spiral, and the chip body both sides are equipped with scribbles the silver layer, and the fixed setting of the linear electrode of spiral is on the silver layer must be scribbled in chip body both sides. Its electrical property that shows of spiral piezoresistor can use in the sort application of difference application scope broader more than traditional piezo -resistor, realized to different pulse voltage be suitable for with the protection, improved piezo -resistor's performance.

Description

The all-round pulse MOA piezoresistors of spiral carbon electrode encapsulation
Technical field
This utility model discloses a kind of piezoresistor, and it is pressure-sensitive that particularly a kind of spiral carbon electrode encapsulates all-round pulse MOA Resistor, it includes electronic circuit, pulsating current, passive electric components, encapsulation technology, MOV varistors overvoltage protection and prevents The technical fields such as shield technology, MOA thunderbolt device shocking preventing technologies.
Background technology
Components and parts-discrete (lead plug-in unit) passive block used in current electronic product:Resistance capacitance etc. is all adopted This chip of component is connected to the metal lead wire mode of connection of " L " shape to the electric current that works in transmission circuit and energy to send out The effect of component its chip unit for electrical property parameters itself is waved to reach product design purpose, especially these lead plug-in types is passive Metal zinc oxide varistor (hereinafter referred to as MOV) in component, the overvoltage being responsible in circuit to occurring in circuit is big The pulsating current shock wave of electric current high-energy plays blood pressure lowering protection leakage current, bears the chip unit behind protecting energy its circuit Gas part is not damaged and plays a crucial role.All it is for many years with the connection core of " frank and outspoken " metal lead wire in MOV industries manufacturing firm Manufacturing product, common varistor is induced current into and drawn piece with a straight wire from varistor surface, this mode Pressure-sensitive surface current can be caused all to concentrate in wire locations, cause the phenomenon that local current densities are excessive.Varistor is not led Before logical, it functions as an electric capacity, and alternating current cross flow is on ceramic chip and silver-coated layer interface;Electric current density it is big Little, with the middle maximum at lead, it not only causes the thermograde in cross flow direction on chip, causes because thermal expansion amount is different Produce radial direction or circumferential crack;And also result in the middle part surface crystal boundary potential barrier reduction first of highest current density or receive Damage, it reduce toleration of the pressure-sensitive device to dash current.Under surge impact, pressure-sensitive device conducting, due to Kelvin effect Impact, electric current be concentrated in chip periphery pass through ceramic crystal.Electric current is diminished by the actual cross-section product of valve block, electric current institute The value that is hampered becomes big, and the voltage dropped on valve block increases, and energy expenditure is also increased as, and valve block heats up and accelerates, at this moment pressure-sensitive damage Wound point just mostly occurs in electric current by comparing the valve block peripheral part of concentration.
Utility model content
All it is the shortcoming of L-shaped design for piezoresistor pin of the prior art mentioned above, this practicality A kind of new all-round pulse MOA piezoresistors of spiral carbon electrode encapsulation of new offer, it adopts spiral yarn shaped electrode, solves L The various problems that shape electrode band comes.
This utility model solves the technical scheme of its technical problem employing:A kind of spiral carbon electrode encapsulation all can pulse MOA piezoresistors, piezoresistor includes chip body and spiral yarn shaped electrode, and chip body both sides are provided with painting silver layer, spiral shell Rotation linear electrode is fixedly installed on chip body both sides must be applied on silver layer.
This utility model solves the technical scheme of its technical problem employing and further comprises:
Described spiral yarn shaped electrode is arranged on painting silver layer by the way of welding.
Described spiral yarn shaped electrode is in chip body embedded set.
The lead of described spiral yarn shaped electrode be arranged at chip body edge placement or chip body center At position, or the optional position being arranged in spiral yarn shaped electrode.
Described spiral yarn shaped electrode is using plane equiangular helical spiral, plane constant speed helix or without the double spiral shells for disconnecting termination Spin line.
The spiral yarn shaped electrode court of described chip body both sides rotates in the same direction, or towards different directions rotation Turn.
Described spiral yarn shaped electrode is using hollow metal helix or using flat metal helical lead wire.
The beneficial effects of the utility model are:Spiral piezoresistor its electrical property for showing is more than traditional pressure sensitive Resistance can use in different classification applications that the scope of application is broader, realize to different pulse voltages be suitable for it is anti- Shield, i.e., all-round pulse is suitable for the production line production relatively easyization high efficiency for making product.
Together with the varistor that the spiral MOV systolic processors of magnetic pole make respectively with rare earth material on year-on-year basis, traditional is same In overall performance electrical performance, the spiral MOV systolic processors of magnetic pole are to be higher by 3~4 times of tradition, rare earth to specification ZnO varistor 4~5 times of tradition is higher by, this is also rare earth pressure made by the alternative expensive rare earth material of the spiral MOV systolic processors of magnetic pole Quick resistance place.
This utility model is described further below in conjunction with the drawings and specific embodiments.
Description of the drawings
Fig. 1 is this utility model dimensional structure diagram.
Chip body surface CURRENT DISTRIBUTION schematic diagram when Fig. 2 is turned on for this utility model.
Fig. 3 is chip body surface CURRENT DISTRIBUTION schematic diagram when varistor of the prior art is turned on.
CURRENT DISTRIBUTION schematic diagram in chip body when Fig. 4 is turned on for this utility model.
CURRENT DISTRIBUTION schematic diagram in chip body when Fig. 5 is varistor of the prior art conducting.
Fig. 6 is straight line L formulas MOV current conducting path of the prior art and length comparison diagram.
Fig. 7 is the schematic diagram that the spiral electrode in this utility model is quincunx electrode.
In figure, 1- chip bodies, 2- applies silver layer, the spiral yarn shaped electrodes of 3-, the distribution of 4- electronics.
Specific embodiment
The present embodiment is this utility model preferred implementation, and other all its principles and basic structure are identical with the present embodiment Or it is approximate, within this utility model protection domain.
Refer to accompanying drawing 1, the encapsulation of spiral carbon electrode in this utility model all can pulse MOA piezoresistors mainly include Chip body 1 and spiral yarn shaped electrode 3, spiral yarn shaped electrode 3 is fixedly installed on the both sides of chip body 1, in the present embodiment, in core The both sides of piece body 1 are provided with painting silver layer 2, and spiral yarn shaped electrode 3 is fixedly installed on painting silver layer 2, in the present embodiment, spiral yarn shaped electricity Pole 3 is arranged on painting silver layer 2 by the way of welding, and when being embodied as, spiral yarn shaped electrode 3 can also be in chip body 1 It is embedding.
In the present embodiment, the lead of spiral yarn shaped electrode 3 is arranged on the center position of chip body 1.
The set-up mode of spiral yarn shaped electrode 3 is including but not limited to following several:
Embodiment one:In the present embodiment, spiral yarn shaped electrode 3 adopts plane equiangular helical spiral;
Embodiment two:In the present embodiment, spiral yarn shaped electrode 3 adopts plane constant speed helix;
Embodiment three:In the present embodiment, spiral yarn shaped electrode 3 is using without the bifilar helix for disconnecting termination.
In this utility model, the spiral yarn shaped electrode 3 of the both sides of chip body 1 is arranged on towards rotating in the same direction, or Towards different directions rotation.In the present embodiment, spiral yarn shaped electrode 3 is using hollow metal helix or using flat metal spiral shell Rotation lead.In the present embodiment, the exit of spiral yarn shaped electrode 3 is arranged at the edge placement of chip body 1, when being embodied as, The exit of spiral yarn shaped electrode 3 can also be arranged on the center of chip body 1, or in spiral yarn shaped electrode 3 Optional position.
Accompanying drawing 2 be refer to accompanying drawing 5, can be overcome by chip body surface and internal CURRENT DISTRIBUTION when conducting can be seen in figure Kelvin effect.Accompanying drawing 6 and accompanying drawing 7 are refer to, is compared with length with the current conducting path of spiral MOV by straight line L formulas MOV Understand, it is clear that spiral MOV paths L ' N>>Path L of straight line L formulas MOV ' N length, in actual size of components In, radius R>>Thickness H, this is also spiral MOV in impact experiment 8/20us and power frequency pressure rise test the reason for outstanding representation One of.
As shown in fig. 7, its screw electrode adopts plum-type structure, three lobe arc line shaped electrode sections composition blossom type knot is similarly Structure.
Spirally its electrical property for showing of piezoresistor can be used more than traditional pressure sensitive resistance and divided in different The scope of application is broader in class application, realize to different pulse voltages be suitable for protection, i.e., all can the applicable of pulse make product The production line production relatively easyization high efficiency of product is got up.

Claims (8)

1. a kind of all-round pulse MOA piezoresistors of spiral carbon electrode encapsulation, is characterized in that:Described piezoresistor includes Chip body and spiral yarn shaped electrode, chip body both sides are provided with painting silver layer, and spiral yarn shaped electrode is fixedly installed on chip body Both sides must be applied on silver layer.
2. the all-round pulse MOA piezoresistors of spiral carbon electrode encapsulation according to claim 1, is characterized in that:Described Spiral yarn shaped electrode is arranged on painting silver layer by the way of welding.
3. the all-round pulse MOA piezoresistors of spiral carbon electrode encapsulation according to claim 1, is characterized in that:Described Spiral yarn shaped electrode is in chip body embedded set.
4. the all-round pulse MOA piezoresistors of spiral carbon electrode encapsulation according to claim 1, is characterized in that:Described The lead of spiral yarn shaped electrode be arranged at chip body edge placement or chip body center position, or be arranged on Optional position in spiral yarn shaped electrode.
5. spiral carbon electrode as claimed in any of claims 1 to 4 encapsulates all-round pulse MOA piezoresistors, its It is characterized in that:Described spiral yarn shaped electrode is using plane equiangular helical spiral, plane constant speed helix or without the double spiral shells for disconnecting termination Spin line.
6. spiral carbon electrode as claimed in any of claims 1 to 4 encapsulates all-round pulse MOA piezoresistors, its It is characterized in that:The spiral yarn shaped electrode court of described chip body both sides rotates in the same direction, or towards different directions rotation.
7. spiral carbon electrode as claimed in any of claims 1 to 4 encapsulates all-round pulse MOA piezoresistors, its It is characterized in that:Described spiral yarn shaped electrode is using hollow metal helix or using flat metal helical lead wire.
8. the all-round pulse MOA piezoresistors of spiral carbon electrode encapsulation according to claim 1, is characterized in that:Its spiral Linear electrode adopts plum-type structure.
CN201621062968.8U 2016-09-19 2016-09-19 All -round pulse MOA piezoresistor of spiral shell rotating magnetic field electrode encapsulation Active CN206148197U (en)

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CN201621062968.8U CN206148197U (en) 2016-09-19 2016-09-19 All -round pulse MOA piezoresistor of spiral shell rotating magnetic field electrode encapsulation

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CN201621062968.8U CN206148197U (en) 2016-09-19 2016-09-19 All -round pulse MOA piezoresistor of spiral shell rotating magnetic field electrode encapsulation

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018049669A1 (en) * 2016-09-19 2018-03-22 深圳市辰驹电子科技有限公司 Versatile pulse-based technique for packaging helical magnetic electrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018049669A1 (en) * 2016-09-19 2018-03-22 深圳市辰驹电子科技有限公司 Versatile pulse-based technique for packaging helical magnetic electrode

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