CN206116622U - Radio frequency antenna circuitry and pin electrostatic protection circuit thereof - Google Patents
Radio frequency antenna circuitry and pin electrostatic protection circuit thereof Download PDFInfo
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- CN206116622U CN206116622U CN201621120307.6U CN201621120307U CN206116622U CN 206116622 U CN206116622 U CN 206116622U CN 201621120307 U CN201621120307 U CN 201621120307U CN 206116622 U CN206116622 U CN 206116622U
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Abstract
The utility model discloses a radio frequency antenna circuitry and pin electrostatic protection circuit thereof, this radio frequency antenna circuitry include antenna body and electrostatic protection circuit, and the electrostatic protection circuit is connected with first diode including connecting the coupling capacitance between radio -frequency antenna pin and low noise amplifier between low -noise amplifier's input and the antenna ground, are connected with the second diode between low -noise amplifier's input and the antenna power, wherein, be connected with the third diode between radio -frequency antenna pin and the antenna ground, the positive pole of third diode is connected to antenna ground, and the negative pole of third diode is connected to the radio -frequency antenna pin, and coupling capacitance connection is between the negative pole of third diode and low -noise amplifier's input. The utility model discloses utilize built -in capacitance coupling to keep apart second level electrostatic protection in addition for good electrostatic protection performance has been realized to the integral protective circuit under the very little condition of the parasitic capacitance to the power.
Description
Technical field
This utility model is related to the circuit field of radio-frequency antenna, more particularly, to the circuit with pin electrostatic protection function
And the radio-frequency antenna circuit with this circuit.
Background technology
Existing many electronic equipments have wireless communication function, and for example, smart mobile phone, panel computer etc. are provided with radio communication
Module, such as bluetooth module or radio-frequency module etc., if electronic equipment is provided with radio-frequency module, also need to be provided for transmitting
Or the antenna of radiofrequency signal is received, generally, antenna is to print on a printed circuit, and other on antenna and circuit board
Device connects, and is such as connected with controller, the signal for receiving is sent to controller, or receives the signal that controller sends,
And the signal of controller is launched after modulation.
For electrostatic is often produced during electronic device works, the voltage of these electrostatic is sometimes very high, and too high is quiet
Piezoelectric voltage can cause serious impact to the electronic device of electronic equipment.If substantial amounts of electrostatic is produced on the pin of antenna, will
Have a strong impact on the transmitting of antenna pair signal and receive, so as to affect the radio communication quality of electronic equipment and other equipment, therefore
How people carry out electrostatic protection to antenna leads in research, lead to not transmitting-receiving so as to avoid antenna from being subject to the impact of electrostatic
The situation of signal.
As shown in figure 1, a kind of existing radio-frequency antenna electrostatic discharge protective circuit is connected to the pin RFIN of radio-frequency antenna, due to penetrating
Electrostatic may be produced on the pin RFIN of frequency antenna, the work of radio-frequency antenna will be had influence on, accordingly, it is desirable to provide from radio-frequency antenna
Pin RFIN to the current by pass between antenna power and antenna ground, to guarantee that the electric charge of electrostatic can discharge.It is existing
Electrostatic discharge protective circuit has a low-noise amplifier LNA1, in the input of antenna leads RFIN and low-noise amplifier LNA1
Electric capacity C1 is provided between LNAIN, and diode D1, diode D1 is provided between antenna leads RFIN and antenna ground RFGND
Anode be connected to antenna ground FRGND, negative electrode is connected to antenna leads RFIN.In antenna leads RFIN and antenna power RFVDD
Between be connected with diode D2, the anode of diode D2 is connected to antenna leads RFIN, and negative electrode is connected to antenna power RFVDD.
Also, electric capacity C2 is connected between antenna power RFVDD and antenna ground RFGND.
When electrostatic charge is formed with antenna leads RFIN, electrostatic charge can with Jing diodes D1 to antenna ground RFGND
Release, it is also possible to which Jing diodes D2 is discharged to antenna power RFVDD.As electrostatic charge is timely released, therefore should not affect
The work of radio-frequency antenna.However, this electrostatic discharge protective circuit has larger parasitic capacitance, the work to radio-frequency antenna has necessarily
Affect, be not optimal electrostatic discharge protective circuit.
It is another kind of common electrostatic discharge protective circuit shown in Fig. 2, the circuit includes low-noise amplifier LNA2, draws in antenna
Electric capacity C11, antenna leads RFIN and antenna ground are connected between the input LNAIN of foot RFIN and low-noise amplifier LNA2
Field effect transistor D11 is connected between RFGND, and electric capacity C12 is connected between antenna power RFVDD and antenna ground RFGND.
After electrostatic is formed on antenna leads RFIN, electrostatic charge discharges to antenna ground RFGND through field effect transistor D11.
But, there is the risk of electric leakage in field effect transistor D11 that this electrostatic discharge protective circuit is arranged, once and field effect transistor
D11 leaks electricity, and will form larger noise, and the release of impact electrostatic charge, and when also resulting in electronic device works, noise is excessive,
And influence whether the job stability of electronic equipment.
The content of the invention
Main purpose of the present utility model be to provide it is a kind of being capable of effective discharge electrostatic charges and work noise is relatively low
Radio-frequency antenna pin electrostatic discharge protective circuit.
Another object of the present utility model is to provide a kind of radio-frequency antenna electricity that can be avoided because of electrostatic charge impact work
Road.
In order to realize above-mentioned main purpose, the radio-frequency antenna pin electrostatic discharge protective circuit that this utility model is provided includes connecting
The coupled capacitor being connected between radio-frequency antenna pin and low noise amplifier, between the input and antenna ground of low-noise amplifier
The first diode is connected with, between the input and antenna power of low-noise amplifier, the second diode is connected with；Wherein, radio frequency
The 3rd diode is connected between antenna leads and antenna ground, the anode of the 3rd diode is connected to antenna ground, the 3rd diode
Negative electrode be connected to radio-frequency antenna pin, and coupled capacitor is connected to the negative electrode of the 3rd diode and the input of low-noise amplifier
Between end.
From such scheme, as the 3rd diode is connected between radio-frequency antenna pin and antenna ground, in antenna
Pin to antenna ground discharge electrostatic charges when, the 3rd diode provides passage for the release of electrostatic charge.Due to coupled capacitor
There can be attenuation to the total electrical charge between low-noise amplifier input to antenna leads, and can be in release electrostatic electricity
During lotus, the DC path of the grid of field effect transistor of the obstruct from antenna leads to low-noise amplifier prevents from releasing in electrostatic charge
Damage of the electric charge of remnants to field effect transistor after putting.So, during electrostatic charge release, due to depositing for the 3rd diode
It is being not only able to avoid electrostatic discharge protective circuit from producing larger parasitic capacitance, additionally it is possible to avoid the field effect that use may be leaked electricity
Ying Guan, also it is avoided that producing larger noise, it is ensured that the normal work of radio-frequency antenna.
One preferred scheme is that on-chip capacitance is connected between antenna power and antenna ground, also, on-chip capacitance
It is more than capacitance of the capacitance more than coupled capacitor, and three times of the capacitance of on-chip capacitance for the capacitance of coupled capacitor.
As can be seen here, by the higher of the capacitance setting of on-chip capacitance, in the higher feelings of the crest voltage of the 3rd diode
Under condition, it can be ensured that the crest voltage of low-noise amplifier is clamped in a less scope, so as to effective protection low noise
The field effect transistor of acoustic amplifier, it is to avoid the grid of field effect transistor is oxidized, is conducive to extending the service life of electrostatic discharge protective circuit.
Further scheme is that electrostatic discharge protective circuit is additionally provided with the 4th diode, and the 4th diode and the 3rd diode are simultaneously
Connection, and the anode of the 4th diode is connected to antenna ground, the negative electrode of the 4th diode is connected to radio-frequency antenna pin.
It can be seen that, the 4th diode in parallel connection, is acted on by the earial drainage of the second diode on the 3rd diode, can be with
The discharge capacity of electrostatic charge is improved further, it is ensured that electrostatic charge can discharge at short notice, the property of electrostatic discharge protective circuit
Can more preferably, and the electrostatic potential that can be born is higher.
Further scheme is that electrostatic discharge protective circuit is additionally provided with resistance, the resistance and the 3rd diodes in parallel.
As can be seen here, by resistance for the passage that electric charge flows is provided between antenna leads and antenna ground, and it is being not required to
When wanting discharge electrostatic charges, resistance can separate the electrical connection between antenna leads and antenna ground.
In order to realize above-mentioned another object, the radio-frequency antenna circuit that this utility model is provided includes antenna body and quiet
Electric protection circuit, electrostatic discharge protective circuit include the coupled capacitor being connected between radio-frequency antenna pin and low noise amplifier, low
The first diode, the input and antenna power of low-noise amplifier are connected between the input and antenna ground of noise amplifier
Between be connected with the second diode；Wherein, the 3rd diode, the 3rd diode are connected between radio-frequency antenna pin and antenna ground
Anode be connected to antenna ground, the negative electrode of the 3rd diode is connected to radio-frequency antenna pin, and coupled capacitor is connected to the three or two
Between the input of the negative electrode and low-noise amplifier of pole pipe.
From such scheme, due to the circuit of radio-frequency antenna in, be connected between radio-frequency antenna pin and antenna ground
3rd diode, in discharge electrostatic charges of the antenna leads to antenna ground, the 3rd diode is provided for the release of electrostatic charge
For the passage of discharge electrostatic charges.As coupled capacitor can be to antenna leads to total between low-noise amplifier input
Electric charge has attenuation, and can intercept the field effect from antenna leads to low-noise amplifier in discharge electrostatic charges
The DC path of the grid of pipe, prevents damage of the remaining electric charge after electrostatic charge discharges to field effect transistor.So, in electrostatic
During electric charge release, due to the presence of the 3rd diode, it is not only able to avoid electrostatic discharge protective circuit from producing larger parasitism electricity
Hold, additionally it is possible to the field effect transistor for avoiding use from leaking electricity, also it is avoided that producing larger noise, it is ensured that radio-frequency antenna is just
Often work.
Description of the drawings
Fig. 1 is a kind of electrical schematic diagram of existing radio-frequency antenna pin protection circuit.
Fig. 2 is the electrical schematic diagram of existing another kind of radio-frequency antenna pin protection circuit.
Fig. 3 is the electrical schematic diagram of this utility model radio-frequency antenna pin electrostatic discharge protective circuit embodiment.
Below in conjunction with drawings and Examples, the utility model is described in further detail.
Specific embodiment
Radio-frequency antenna circuit of the present utility model has an antenna body, antenna body can as such as bluetooth module, penetrate
The critical piece of frequency module or other wireless communication modules, for launching wireless signal, and receives other electronic equipment institutes
The wireless signal for sending.Preferably, antenna body is to print on a printed circuit, and the shape of antenna body can be various
Various kinds, can for example be strip, or be multiple rectangles circle.Antenna body can will pass through the simulation of modulation
Signal is launched, and can receive the wireless signal that other wireless devices send, the wireless signal needs for generally being received
Digital signal can be just converted into after demodulated, and digital signal is exported to digital devices such as controllers.
As substantial amounts of electrostatic may be produced during electronic device works, and it is likely to produce on antenna body substantial amounts of quiet
Electricity, typical situation are exactly that substantial amounts of electrostatic charge is gathered at the pin of antenna, and these electrostatic charges are by the normal of antenna
Work causes very big impact, for example, can affect the frequency of antenna, if the frequency of antenna is affected, antenna will be affected to connect
Wireless signal is received, the transmission of wireless signal can be also affected.In the present embodiment, electrostatic discharge protective circuit is set on the pin of antenna,
The electrostatic charge on antenna body is discharged by electrostatic discharge protective circuit, it is to avoid electrostatic charge causes shadow to antenna body
Ring.
Referring to Fig. 3, electrostatic discharge protective circuit is connected to antenna leads RFIN, and antenna leads RFIN is the antenna sheet of radio-frequency antenna
The pin of body.Electrostatic discharge protective circuit is provided with low-noise amplifier LNA3, in the present embodiment, is provided with field in low-noise amplifier LNA3
Effect pipe M0, the grid of field effect transistor M0 are the input LNAIN of low-noise amplifier LNA3.Also, in antenna leads
Electric capacity C21 is connected between the input LNAIN of RFIN and low-noise amplifier LNA3, it is preferred that electric capacity C21 is coupling electricity
Hold.
It is connected with diode D22 between the input LNAIN and antenna power RFVDD of low-noise amplifier LNA3, two
The input of pole pipe D22 is connected to the input LNAIN of low-noise amplifier LNA3, and the negative electrode of diode D22 is connected to antenna
Power supply RFVDD.Diode D21 is connected between the input LNAIN and antenna ground RFGND of low-noise amplifier LNA3, two
The anode of pole pipe D21 is connected to antenna ground RFGND, and the negative electrode of diode D22 is connected to the input of low-noise amplifier LNA3
End LNAIN.
Also, diode D23 is connected between antenna leads RFIN and antenna ground RFGND, the anode of diode D23 connects
Antenna ground RFGND is connected to, negative electrode is connected to antenna leads RFIN.Due to antenna leads RFIN it is defeated with low-noise amplifier LNA3
Enter to hold LNAIN to be connected with electric capacity C21, therefore the two ends of electric capacity C21 are the negative electrode and low noise for being connected to diode D23 respectively
The input LNAIN of amplifier LNA3.
Also, diode D23 is also in parallel with diode D24, that is, the anode of diode D24 is connected to antenna ground
RFGND, negative electrode are connected to antenna leads RFIN.Additionally, diode D23 is also in parallel with resistance R21, the two of resistance R21 are that is to say
End is respectively connecting to antenna ground RFGND and antenna leads RFIN.
Electric capacity C22 is connected between antenna power RFVDD and antenna ground RFGND, it is preferred that electric capacity C22 is electricity on piece
Hold, and the capacitance of electric capacity C22, much larger than the capacitance of electric capacity C21, for example, the capacitance of electric capacity C22 is the electricity of electric capacity C21
More than the three times of capacitance, it might even be possible to be more than ten times.Also, antenna power RFVDD is connected to low-noise amplifier LNA3's
The drain electrode of field effect transistor M0, antenna ground RFGND are connected to the source electrode of field effect transistor M0 of low-noise amplifier LNA3.
When electrostatic is produced on antenna body, electrostatic charge can be discharged by electrostatic discharge protective circuit, specifically,
When antenna leads RFIN carries out Electro-static Driven Comb to antenna ground RFGND, electric current leakage pathways of the diode D23 for electrostatic charge,
When electrostatic charge discharges, the crest voltage of the voltage produced by electrostatic is set to Vesd.Electric capacity C21 is acted on two, and one
Individual effect is to decay antenna leads RFIN to the AC energy of field effect transistor M0 grid, during discharging electrostatic charge, electrostatic
Electric charge decays to Vesd × C21 to the total electrical charge of field effect transistor M0 grid by electric capacity C21.For example, in the human mould of 2000V
During the Electro-static Driven Comb of type, total electrical charge is 100pF × 2000V=200n coulombs, and Vesd × C21 is about 10V × 10pF=0.1n
Coulomb, that is, decayed about 2000 times.Another effect of electric capacity C21 is cut-off antenna leads RFIN in Electro-static Driven Comb
DC path of the voltage to field effect transistor pipe M0 grids, prevents residual charge infringement field effect transistor M0 after electrostatic charge release
Grid.
When the electrostatic charge of negative voltage discharges, diode D21 can be when the electrostatic charge of negative voltage discharges, and clamper is low
Voltage between the input LNAIN of noise amplifier LNA3 and antenna ground RFGND so that the magnitude of voltage of the voltage is left in 1V
It is right.When the electrostatic charge of positive voltage discharges, diode D22 can with the input LNAIN of clamper low-noise amplifier LNA3 and
Voltage between antenna power RFVDD so that the magnitude of voltage of the voltage is in 1V or so.Due to the amount very little of Vesd × C21, so
The size of clamp diode D21 and D22 can be with very little, so that the parasitic capacitance for introducing is also very little.
Also, due to, between the antenna power RFVDD of electrostatic discharge protective circuit and antenna ground RFGND, being provided with electricity on piece
Hold C22, in the present embodiment, the capacitance of on-chip capacitance C22 is more than the three times of the capacitance of coupled capacitor C21.Assume electric capacity
N times for the capacitance of electric capacity C21 of the capacitance of C22, that is, C22=N × C21.When electrostatic charge discharges, antenna power
Magnitude of voltage Vfmvdd=(Vesd-1V)/(N+1) of RFVDD, wherein 1V are the pressure drop on diode D22.Assume produced by electrostatic
Voltage crest voltage Vesd be 10V, N is 8, then Vfmvdd=1V, Vlnain=Vfmvdd+1V=2V, so in electrostatic protection
During the higher electrostatic charge release of the diode D23 crest voltages of circuit, can ensure that low-noise amplifier LNA3's is defeated
Enter to hold the crest voltage of LNAIN between -1V to+2V, so as to protect to the grid of field effect transistor M0 well.
It can be seen that, this utility model is the method coupled using small capacitances, separates the input of low-noise amplifier LNA3
LNAIN and antenna leads RFIN, and decayed into the electrostatic charge energy of low-noise amplifier LNA3.In low noise amplification
Device LNA3 input ends LNAIN by little diode path clamper negative sense electrostatic charge release voltage, using electric capacity C21 partial pressures road
Footpath adds little diode D22 clampers to live the voltage of positive electrostatic charge release.When being discharged due to electric capacity C21 coupling attenuations electrostatic charge
Energy of a charge is acted on, cut-in voltage high high pressure field effect when electrostatic discharge protective circuit can use leakage current little but electrostatic charge discharges
The circuit realirations such as pipe M0.As the area of diode D21, D22 as clamp diode can be made very little, parasitic capacitance
It is very little, rejection ability of the circuit to power supply is greatly improved.
Certainly, above-mentioned scheme is this utility model preferred embodiment, and practical application is that to have more
Change, for example, is not provided with diode D24 and resistance R21, or reduces with being arranged on antenna power RFVDD and antenna RFGND
Electric capacity C22 before, these changes do not affect enforcement of the present utility model, should be included in protection model of the present utility model yet
In enclosing.
Claims (10)
1. radio-frequency antenna pin electrostatic discharge protective circuit, including：
The coupled capacitor being connected between radio-frequency antenna pin and low noise amplifier, the input of the low-noise amplifier with
The first diode is connected between antenna ground, between the input and antenna power of the low-noise amplifier, the two or two is connected with
Pole pipe；
It is characterized in that：
The 3rd diode, the anode connection of the 3rd diode are connected between the radio-frequency antenna pin and the antenna ground
To antenna ground, the negative electrode of the 3rd diode is connected to the radio-frequency antenna pin, and the coupled capacitor is connected to
Between the negative electrode of the 3rd diode and the input of the low-noise amplifier.
2. radio-frequency antenna pin electrostatic discharge protective circuit according to claim 1, it is characterised in that：
On-chip capacitance is connected between the antenna power and the antenna ground.
3. radio-frequency antenna pin electrostatic discharge protective circuit according to claim 2, it is characterised in that：
Capacitance of the capacitance of the on-chip capacitance more than the coupled capacitor, and the capacitance of the on-chip capacitance is described
It is more than the three times of the capacitance of coupled capacitor.
4. the radio-frequency antenna pin electrostatic discharge protective circuit according to any one of claims 1 to 3, it is characterised in that its feature
It is：
The electrostatic discharge protective circuit is additionally provided with the 4th diode, the 4th diode and the 3rd diodes in parallel, and institute
The anode for stating the 4th diode is connected to the antenna ground, and the negative electrode of the 4th diode is connected to the radio-frequency antenna and draws
Foot.
5. radio-frequency antenna pin electrostatic discharge protective circuit according to claim 4, it is characterised in that：
The electrostatic discharge protective circuit is additionally provided with resistance, the resistance and the 3rd diodes in parallel.
6. radio-frequency antenna circuit, including：
Antenna body and electrostatic discharge protective circuit, the electrostatic discharge protective circuit include that being connected to radio-frequency antenna pin is put with low noise
Coupled capacitor between big device, is connected with the first diode between the input and antenna ground of the low-noise amplifier, described
The second diode is connected between the input and antenna power of low-noise amplifier；
It is characterized in that：
The 3rd diode, the anode connection of the 3rd diode are connected between the radio-frequency antenna pin and the antenna ground
To antenna ground, the negative electrode of the 3rd diode is connected to the radio-frequency antenna pin, and the coupled capacitor is connected to
Between the negative electrode of the 3rd diode and the input of the low-noise amplifier.
7. radio-frequency antenna circuit according to claim 6, it is characterised in that：
On-chip capacitance is connected between the antenna power and the antenna ground.
8. radio-frequency antenna circuit according to claim 7, it is characterised in that：
Capacitance of the capacitance of the on-chip capacitance more than the coupled capacitor, and the capacitance of the on-chip capacitance is described
It is more than the three times of the capacitance of coupled capacitor.
9. the radio-frequency antenna circuit according to any one of claim 6 to 8, it is characterised in that it is characterized in that：
The electrostatic discharge protective circuit is additionally provided with the 4th diode, the 4th diode and the 3rd diodes in parallel, and institute
The anode for stating the 4th diode is connected to the antenna ground, and the negative electrode of the 4th diode is connected to the radio-frequency antenna and draws
Foot.
10. radio-frequency antenna circuit according to claim 9, it is characterised in that：
The electrostatic discharge protective circuit is additionally provided with resistance, the resistance and the 3rd diodes in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621120307.6U CN206116622U (en) | 2016-10-13 | 2016-10-13 | Radio frequency antenna circuitry and pin electrostatic protection circuit thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621120307.6U CN206116622U (en) | 2016-10-13 | 2016-10-13 | Radio frequency antenna circuitry and pin electrostatic protection circuit thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206116622U true CN206116622U (en) | 2017-04-19 |
Family
ID=58528624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621120307.6U Active CN206116622U (en) | 2016-10-13 | 2016-10-13 | Radio frequency antenna circuitry and pin electrostatic protection circuit thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206116622U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109194346A (en) * | 2018-08-31 | 2019-01-11 | 出门问问信息科技有限公司 | Anti-jamming circuit, signal receiving circuit and electronic equipment |
| CN109219330A (en) * | 2017-07-03 | 2019-01-15 | 北京小米移动软件有限公司 | Electronic equipment |
| CN111756028A (en) * | 2019-03-29 | 2020-10-09 | 北京小米移动软件有限公司 | Electronic device |
-
2016
- 2016-10-13 CN CN201621120307.6U patent/CN206116622U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109219330A (en) * | 2017-07-03 | 2019-01-15 | 北京小米移动软件有限公司 | Electronic equipment |
| CN109194346A (en) * | 2018-08-31 | 2019-01-11 | 出门问问信息科技有限公司 | Anti-jamming circuit, signal receiving circuit and electronic equipment |
| CN111756028A (en) * | 2019-03-29 | 2020-10-09 | 北京小米移动软件有限公司 | Electronic device |
| CN111756028B (en) * | 2019-03-29 | 2022-07-01 | 北京小米移动软件有限公司 | Electronic device |
| US11437811B2 (en) | 2019-03-29 | 2022-09-06 | Beijing Xiaomi Mobile Software Co., Ltd. | Electronic device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220321 Address after: Rooms 1306-1309, 13 / F, 19 science Avenue West, Hong Kong Science Park, Shatin, New Territories, China Patentee after: BUILDWIN INTERNATIONAL (ZHUHAI) LTD. Address before: 519015 3rd Floor, Stereo Science and Technology Building, 184 Bailian Road, Jida, Zhuhai City, Guangdong Province Patentee before: BUILDWIN INTERNATIONAL (ZHUHAI) Ltd. |