CN206114783U - Electromagnetic compatibility filtering structure of millimeter wave detector - Google Patents
Electromagnetic compatibility filtering structure of millimeter wave detector Download PDFInfo
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- CN206114783U CN206114783U CN201621169551.1U CN201621169551U CN206114783U CN 206114783 U CN206114783 U CN 206114783U CN 201621169551 U CN201621169551 U CN 201621169551U CN 206114783 U CN206114783 U CN 206114783U
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- waveguide
- probe
- amplifier
- microstrip line
- filter structure
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- 238000001914 filtration Methods 0.000 title abstract description 9
- 239000000523 sample Substances 0.000 claims abstract description 32
- 230000007704 transition Effects 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims description 12
- 238000005538 encapsulation Methods 0.000 claims description 3
- 230000037431 insertion Effects 0.000 claims 1
- 238000003780 insertion Methods 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 8
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
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Abstract
The utility model discloses an electromagnetic compatibility filtering structure of millimeter wave detector, including two -stage broadband amplifier, connect in the waveguide filtering structure between this two -stage width amplifier to and connect the transition probe between each grade width amplifier and waveguide filtering structure, broadband amplifier passes through microstrip line transmission radiofrequency signal, the transition probe connector broadband amplifier the microstrip line and be connected with waveguide filtering structure. The utility model discloses add the rectangular waveguide structure and realized in -band high frequency signal's low -loss transmission and outband low frequency signals's high loss filtering in the middle of two -stage broadband amplifier to adopt the probe structure to pass through between waveguide and microstrip, has guaranteed radiofrequency signal's smooth transmission, the high -pass filtering that satisfies the electromagnetic compatibility requirement of having realized like this ingeniously.
Description
Technical field
The utility model is related to millimetre-wave detector technical field, specifically, is related to a kind of millimetre-wave detector
Electromagnetic compatibility filter structure.
Background technology
Millimetre-wave detector needs the radiofrequency signal for receiving particular frequency range, and big according to the signal power for receiving
It is little, it is converted into corresponding d. c. voltage signal output.Wave detector utilizes broad band amplifier therein, by the radiofrequency signal for receiving
After amplification, then by microstrip transmission line output to detector diode, and then obtain corresponding d. c. voltage signal.Due to amplifier
Broadband character, out of band signal will necessarily together be amplified, so, when product needed meets electromagnetic compatibility relevant criterion, will
Difficulties.
Utility model content
For above-mentioned the deficiencies in the prior art, the utility model provides a kind of high-efficient filter except the millimeter wave detection of out of band signal
The electromagnetic compatibility filter structure of device.
To achieve these goals, the technical solution adopted in the utility model is as follows：
A kind of electromagnetic compatibility filter structure of millimetre-wave detector, including two-stage broad band amplifier, also including being connected to this
Guide filter structure between two-stage width amplifier, and be connected between each level width amplifier and guide filter structure
Transition probe；The broad band amplifier transmits radiofrequency signal by microstrip line, the transition probe connection broad band amplifier
Microstrip line is simultaneously connected with guide filter structure.
Further, the guide filter structure includes the carrier with waveguide cavity of resorption and the lid with waveguide epicoele,
The waveguide cavity of resorption and waveguide epicoele are mutually matched composition rectangular waveguide cavity；The both ends of the waveguide epicoele and waveguide cavity of resorption
Side is equipped with the opening for transition probe signals transition being mutually matched, and the open outer side on the carrier is provided with and transition
The slot of probe matching, the open outer side on the lid is provided with the breach with transition probe matching.
Specifically, the carrier and lid are connected by screw encapsulation rectangular waveguide cavity.
Further, the transition probe is made up of substrate and the probe microstrip line being arranged on substrate, wherein, it is described
Substrate matches with the shape size of the slot and breach, and the probe microstrip line connects with the microstrip line of the width amplifier
Connect, and it is corresponding with the opening when the substrate inserts the slot and breach.
Compared with prior art, the utility model has the advantages that：
The utility model adds Rectangular Waveguide Structure to realize with the low of interior high-frequency signal in the middle of two-stage broad band amplifier
Loss transmission and the high loss with outer low frequency signal are filtered, and carry out transition using probe structure between waveguide and micro-strip, are protected
The smooth transmission of radiofrequency signal has been demonstrate,proved, the high-pass filtering for meeting EMC Requirements, and this practicality has so dexterously been realized
New structure is simple, designs ingenious, with low cost, is with a wide range of applications, and is adapted to popularization and application.
Description of the drawings
Fig. 1 is structural representation of the present utility model.
Fig. 2 is the positive structure diagram of carrier in the utility model.
Fig. 3 is the positive structure diagram of lid in the utility model.
Specific embodiment
With reference to the accompanying drawings and examples the utility model is described in further detail, and embodiment of the present utility model includes
But it is not limited to the following example.
Embodiment
As shown in Figure 1 to Figure 3, the electromagnetic compatibility filter structure of the millimetre-wave detector, including two-stage broad band amplifier 3,
The guide filter structure 1 being connected between the two-stage width amplifier, and each level width amplifier is connected to waveguide filter
Transition probe 2 between wave structure；Wherein, broad band amplifier is existing device, and it passes through the transmission radiofrequency signal of microstrip line 4, so
And because of its width characteristic, out of band signal can together be amplified while radiofrequency signal is amplified, therefore tied by the guide filter
Structure filters out of band signal, so as to meet EMC Requirements.The microstrip line of transition probe connection broad band amplifier and with
Guide filter structure connects.
Specifically, the guide filter structure includes the carrier 11 with waveguide cavity of resorption 12 and the lid with waveguide epicoele 14
Body 13, the waveguide cavity of resorption and waveguide epicoele are mutually matched composition rectangular waveguide cavity；The waveguide epicoele and waveguide cavity of resorption
Both ends side is equipped with the opening 15 for transition probe signals transition being mutually matched, and the open outer side on the carrier sets
There is the slot 16 with transition probe matching, the open outer side on the lid is provided with the breach 17 with transition probe matching.It is described
Carrier and lid are connected by screw encapsulation rectangular waveguide cavity.In addition, other redundant spaces on carrier can be additionally used in placement
Detection peripheral circuit.
Further, the transition probe is made up of substrate 18 and the probe microstrip line 19 being arranged on substrate, wherein,
The substrate matches with the shape size of the slot and breach, the micro-strip of the probe microstrip line and the width amplifier
Line connects, and corresponding with the opening when the substrate inserts the slot and breach.
When the utility model is used, the transmission connected by transition probe between broad band amplifier and guide filter structure is led to
Road, radiofrequency signal is incoming by the microstrip line of previous stage broad band amplifier, realizes into rectangular waveguide cavity through probe microstrip line
The microstrip line of radiofrequency signal to rectangular waveguide transition, it is Jing after the high-pass filtering of rectangular waveguide cavity then back-to-back by identical
The transition probe of structure realizes rectangular waveguide to the transition of microstrip line, and afterwards radiofrequency signal is entered by the probe microstrip line of rear stage
Enter the broad band amplifier of rear stage, finally export into detector diode.
Above-described embodiment is only preferred embodiment of the present utility model, not to the restriction of the utility model protection domain,
In every case design principle of the present utility model, and the change for carrying out non-creativeness work on this basis and making are adopted, all should
Belong within protection domain of the present utility model.
Claims (4)
1. the electromagnetic compatibility filter structure of a kind of millimetre-wave detector, including two-stage broad band amplifier, it is characterised in that also include
The guide filter structure being connected between the two-stage width amplifier, and it is connected to each level width amplifier and guide filter
Transition probe between structure；The broad band amplifier transmits radiofrequency signal by microstrip line, and the transition probe connects broadband
The microstrip line of amplifier is simultaneously connected with guide filter structure.
2. a kind of electromagnetic compatibility filter structure of millimetre-wave detector according to claim 1, it is characterised in that the ripple
Leading filter structure includes the carrier with waveguide cavity of resorption and the lid with waveguide epicoele, the waveguide cavity of resorption and waveguide epicoele phase
Mutually matching constitutes rectangular waveguide cavity；The both ends side of the waveguide epicoele and waveguide cavity of resorption is equipped with being used for of being mutually matched
The opening of transition probe signals transition, the open outer side on the carrier is provided with the slot with transition probe matching, the lid
On open outer side be provided with breach with transition probe matching.
3. a kind of electromagnetic compatibility filter structure of millimetre-wave detector according to claim 2, it is characterised in that the load
Body and lid are connected by screw encapsulation rectangular waveguide cavity.
4. a kind of electromagnetic compatibility filter structure of the millimetre-wave detector according to Claims 2 or 3, it is characterised in that institute
State transition probe to be made up of substrate and the probe microstrip line that is arranged on substrate, wherein, the substrate and the slot and breach
Shape size match, the probe microstrip line is connected with the microstrip line of the width amplifier, and the substrate insertion
It is corresponding with the opening when slot and breach.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621169551.1U CN206114783U (en) | 2016-10-26 | 2016-10-26 | Electromagnetic compatibility filtering structure of millimeter wave detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621169551.1U CN206114783U (en) | 2016-10-26 | 2016-10-26 | Electromagnetic compatibility filtering structure of millimeter wave detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206114783U true CN206114783U (en) | 2017-04-19 |
Family
ID=58525014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621169551.1U Active CN206114783U (en) | 2016-10-26 | 2016-10-26 | Electromagnetic compatibility filtering structure of millimeter wave detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206114783U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113904076A (en) * | 2021-12-13 | 2022-01-07 | 成都雷电微晶科技有限公司 | W-band H-plane probe transition structure with image frequency suppression characteristic |
| CN113970562A (en) * | 2021-08-30 | 2022-01-25 | 杭州电子科技大学 | Microwave/millimeter wave waveguide sensor with filtering function |
-
2016
- 2016-10-26 CN CN201621169551.1U patent/CN206114783U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113970562A (en) * | 2021-08-30 | 2022-01-25 | 杭州电子科技大学 | Microwave/millimeter wave waveguide sensor with filtering function |
| CN113970562B (en) * | 2021-08-30 | 2023-08-29 | 杭州电子科技大学 | Microwave/millimeter wave waveguide sensor with filtering function |
| CN113904076A (en) * | 2021-12-13 | 2022-01-07 | 成都雷电微晶科技有限公司 | W-band H-plane probe transition structure with image frequency suppression characteristic |
| CN113904076B (en) * | 2021-12-13 | 2022-02-15 | 成都雷电微晶科技有限公司 | W-band H-plane probe transition structure with image frequency suppression characteristic |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: No. 2806, 28th Floor, Building 2, No. 530, Middle Section of Tianfu Avenue, Chengdu High tech Zone, China (Sichuan) Pilot Free Trade Zone, Chengdu City, Sichuan Province, 610000 Patentee after: CHENGDU RAXIO SHENGTONG ELECTRONIC TECHNOLOGY CO.,LTD. Address before: 1 / F, no.259, Xinle middle street, hi tech Zone, Chengdu, Sichuan 610000 Patentee before: CHENGDU RAXIO SHENGTONG ELECTRONIC TECHNOLOGY CO.,LTD. |