CN206041464U - Over -temperature protection circuit - Google Patents

Over -temperature protection circuit Download PDF

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Publication number
CN206041464U
CN206041464U CN201620950037.5U CN201620950037U CN206041464U CN 206041464 U CN206041464 U CN 206041464U CN 201620950037 U CN201620950037 U CN 201620950037U CN 206041464 U CN206041464 U CN 206041464U
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China
Prior art keywords
thermal
resistance
shutdown circuit
power input
circuit according
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Active
Application number
CN201620950037.5U
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Chinese (zh)
Inventor
张莉
曲志华
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Ningbo Sainaibi Photoelectric Technology Co ltd
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NINGBO SNAPPY OPTOELECTRONICS CO Ltd
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Priority to CN201620950037.5U priority Critical patent/CN206041464U/en
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Abstract

The utility model relates to a protection circuit especially relates to an over -temperature protection circuit. The utility model discloses in, through the reference utmost point of the collecting electrode with PNP type triode through first ohmic connection stabiliser to make PNP type transistor when the resistance grow that switches on back thermistor, what can last switches on, thereby the locking that assurance integrated circuit chip can continue increases integrated circuit chip temperature security of protection.

Description

A kind of thermal-shutdown circuit
Technical field
This utility model is related to a kind of protection circuit, more particularly to a kind of thermal-shutdown circuit.
Background technology
At present, enter the sensing of trip temperature by critesistor to temperature, and enter trip temperature guarantor when temperature exceeding standard Shield, this technical scheme have been applied in temperature protection field, but in existing temperature protection circuit, it is extensive in temperature When arriving normal condition again, the change in resistance of critesistor, so that temperature protection circuit returns to original state, it is impossible to continue Temperature protection is carried out, if there is other temperature hidden danger in circuit to be protected, it is impossible to timely avoid other temperature hidden danger Occur.
Utility model content
For the problem that prior art is present, now there is provided a kind of temperature protection circuit.
Specific technical scheme is as follows:
A kind of thermal-shutdown circuit, is applied to the protection to an IC chip, and the thermal-shutdown circuit includes:
Power input, input supply voltage;
Critesistor, one end are connected with the power input, and the critesistor is negative tempperature coefficient thermistor;
Manostat, with negative electrode, anode and refers to pole, and the negative electrode connects the power input, the reference pole with The opposite other end connection of the critesistor;
PNP type triode, with base stage, collector and emitter, the base stage respectively with the power input, described The negative electrode connection of manostat, the emitter stage be connected with the power input, the colelctor electrode pass through first resistor with it is described The reference pole connection of manostat, and the colelctor electrode is also connected with the IC chip, with to the IC chip Locking.
Preferably, model TL431 of the manostat.
Preferably, the plus earth of the manostat.
Preferably, the negative electrode of the manostat is connected with the power input by second resistance.
Preferably, one end of the critesistor is connected with the power input by 3rd resistor.
Preferably, the base stage of the PNP type triode is connected with the negative electrode of the manostat by the 4th resistance.
Preferably, the colelctor electrode of the PNP type triode is connected with the IC chip by the 5th resistance.
Preferably, the opposite other end of the critesistor connects one end of the 6th resistance.
Preferably, the opposite other end ground connection of the 6th resistance.
Preferably, the base stage of the PNP type triode connects the power input by the 7th resistance.
Preferably, the IC chip includes switching tube, and the switching tube has control end, the control end connection The colelctor electrode of the PNP transistor.
The beneficial effect of above-mentioned technical proposal is:
In above-mentioned technical proposal, by the colelctor electrode of PNP type triode to be connected the reference of manostat by first resistor Pole, so that PNP transistor is when the resistance of critesistor becomes big, the conducting that can continue, so that ensure integrated circuit The locking that chip can continue to, increases the safety of integrated circuit chip temperature protection.
Description of the drawings
Fig. 1 is a kind of structural representation of the embodiment of temperature protection circuit of this utility model.
Specific embodiment
It should be noted that in the case where not conflicting, following technical proposals can be mutually combined between technical characteristic.
Below in conjunction with the accompanying drawings specific embodiment of the present utility model is further described:
The present embodiment provides a kind of temperature protection circuit, as shown in figure 1, the temperature protection circuit in the application includes that one is electric Source input Vcc, for providing input voltage, with the emitter stage connection power input of PNP type triode Q1 in the present embodiment Vcc, the colelctor electrode of PNP type triode Q1 are connected with an IC chip by the 5th resistance R5, when PNP type triode Q1 is led When logical, there is voltage in the two ends of the 5th resistance R5, and at the outfan DE of thermal-shutdown circuit also export a voltage.
If the outfan DE connection IC chips of thermal-shutdown circuit, such as IC chip include out Guan Guan(Metal-oxide-semiconductor etc.), the switching tube can control the locking and work of IC chip, and control end and the excess temperature of switching tube are protected The outfan DE connections of protection circuit, and switching tube is that high level ends, the electricity at the outfan DE of thermal-shutdown circuit When pressure is raised, the switching tube ends, and IC chip realizes locking.
Thermal-shutdown circuit in the present embodiment also includes a critesistor RT1, and the critesistor is negative temperature coefficient Critesistor, temperature are raised, and the resistance of critesistor reduces, and one end of critesistor RT1 is defeated with power supply by 3rd resistor R3 Enter and hold Vcc to connect.And the opposite other end of critesistor RT1 passes through one the 6th resistance eutral grounding.
Temperature protection circuit in the present embodiment also includes that manostat U1, the manostat U1 in the present embodiment can be TL431, manostat U1 can have with reference to pole, negative electrode and anode, and its Anodic can be grounded, and negative electrode can be electric by the 4th Resistance R4 and the 7th resistance R7 connection power input Vcc, and the reference pole of manostat U1 connects the relative of critesistor RT1 The other end, the negative electrode of manostat U1 also connect power input Vcc by second resistance R2.
In the present embodiment, TL431 is controllable accurate source of stable pressure.Its output voltage just arbitrarily can be set with two resistance Put from Verf(2.5V)Any value in the range of 36V.The exemplary dynamic impedance of the device is 0.2 Ω, in many applications Replace Zener diode with it, for example, digital voltmeter, discharge circuit, adjustable voltage source, Switching Power Supply etc..
It should be noted that the colelctor electrode of PNP type triode Q1 in the present embodiment is also steady by the connection of first resistor R1 The reference pole of depressor U1, when temperature is raised, the resistance of critesistor RT1 diminishes, and manostat U1 collections are temperature-sensitive electricity Partial pressure between resistance and the 6th resistance R6, the voltage of the reference pole of manostat U1 are raised, and the collection of the base stage of PNP type triode It is the partial pressure between the 7th resistance R7 and the 4th resistance R4, so the node formed between the 7th resistance R7 and the 4th resistance R4 Voltage can instantaneously diminish with being reduced to U1 reference voltages of the resistance of critesistor RT1.
As PNP type triode Q1 is low level conducting, when now the resistance of critesistor RT1 is reduced to a certain degree of Wait, the conducting of PNP type triode Q1, in order to prevent PNP type triode Q1 cut-off after temperature is reduced, so by PNP type triode Q1 Colelctor electrode by first resistor connect manostat U1 reference pole, maintain PNP type triode Q1 conducting, as described above, holding The locking of continuation of insurance card IC chip, can just resume work when needing hand-reset, it is ensured that the safe operation of circuit.
To sum up, in above-mentioned technical proposal, by the colelctor electrode of PNP type triode is connected manostat by first resistor With reference to pole, so that PNP transistor is when the resistance of critesistor becomes big, the conducting that can continue is integrated so as to ensure The locking that circuit chip can continue to, increases the safety of integrated circuit chip temperature protection.
By explanation and accompanying drawing, the exemplary embodiments of the ad hoc structure of specific embodiment are given, it is new based on this practicality Type spirit, can also make other conversions.Although above-mentioned utility model proposes existing preferred embodiment, however, these contents It is not intended as limitation.
For a person skilled in the art, after reading described above, various changes and modifications undoubtedly will be evident that. Therefore, appending claims should regard the whole variations and modifications for covering true intention of the present utility model and scope as. In Claims scope, any and all scope of equal value and content, are all considered as still belonging to intention of the present utility model and model In enclosing.

Claims (10)

1. a kind of thermal-shutdown circuit, it is characterised in that be applied to the protection to an IC chip, the overheat protector electricity Road includes:
Power input, input supply voltage;
Critesistor, one end are connected with the power input, and the critesistor is negative tempperature coefficient thermistor;
Manostat, with negative electrode, anode and refers to pole, and the negative electrode connects the power input, the reference pole with it is described The opposite other end connection of critesistor;
PNP type triode, with base stage, collector and emitter, the base stage respectively with the power input, the voltage stabilizing The negative electrode connection of device, the emitter stage are connected with the power input, and the colelctor electrode passes through first resistor and the voltage stabilizing The reference pole connection of device, and the colelctor electrode is also connected with the IC chip, to lock to the IC chip.
2. thermal-shutdown circuit according to claim 1, it is characterised in that model TL431 of the manostat.
3. thermal-shutdown circuit according to claim 1, it is characterised in that the plus earth of the manostat.
4. thermal-shutdown circuit according to claim 1, it is characterised in that the negative electrode of the manostat passes through second resistance It is connected with the power input.
5. thermal-shutdown circuit according to claim 1, it is characterised in that one end of the critesistor is electric by the 3rd Resistance is connected with the power input.
6. thermal-shutdown circuit according to claim 1, it is characterised in that the base stage of the PNP type triode is by the Four resistance are connected with the negative electrode of the manostat.
7. thermal-shutdown circuit according to claim 1, it is characterised in that the colelctor electrode of the PNP type triode passes through 5th resistance is connected with the IC chip.
8. thermal-shutdown circuit according to claim 1, it is characterised in that the critesistor is connect by the 6th resistance Ground.
9. thermal-shutdown circuit according to claim 1, it is characterised in that the base stage of the PNP type triode is by the Seven resistance connect the power input.
10. thermal-shutdown circuit according to claim 1, it is characterised in that the IC chip includes switching tube, The switching tube has control end, and the control end connects the colelctor electrode of the PNP transistor.
CN201620950037.5U 2016-08-26 2016-08-26 Over -temperature protection circuit Active CN206041464U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201620950037.5U CN206041464U (en) 2016-08-26 2016-08-26 Over -temperature protection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201620950037.5U CN206041464U (en) 2016-08-26 2016-08-26 Over -temperature protection circuit

Publications (1)

Publication Number Publication Date
CN206041464U true CN206041464U (en) 2017-03-22

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Application Number Title Priority Date Filing Date
CN201620950037.5U Active CN206041464U (en) 2016-08-26 2016-08-26 Over -temperature protection circuit

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109066594A (en) * 2018-08-01 2018-12-21 珠海格力电器股份有限公司 A kind of over-temperature protection device of motor, motor and its excess temperature protection method
CN109980954A (en) * 2019-04-15 2019-07-05 苏州沙丘电子科技有限公司 Switching power circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109066594A (en) * 2018-08-01 2018-12-21 珠海格力电器股份有限公司 A kind of over-temperature protection device of motor, motor and its excess temperature protection method
CN109980954A (en) * 2019-04-15 2019-07-05 苏州沙丘电子科技有限公司 Switching power circuit
CN109980954B (en) * 2019-04-15 2020-07-14 苏州沙丘电子科技有限公司 Switching power supply circuit

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C14 Grant of patent or utility model
GR01 Patent grant
CP03 Change of name, title or address

Address after: No. 122315000 Jianlan Road, Gaoxin District, Ningbo, Zhejiang

Patentee after: Ningbo sainaibi Photoelectric Technology Co.,Ltd.

Address before: No.56 Keda Road, hi tech Zone, Ningbo City, Zhejiang Province, 315000

Patentee before: NINGBO SNAPPY OPTOELECTRONICS Co.,Ltd.

CP03 Change of name, title or address