CN206019878U - A kind of DSOI micro-pressure sensors - Google Patents
A kind of DSOI micro-pressure sensors Download PDFInfo
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- CN206019878U CN206019878U CN201620984914.0U CN201620984914U CN206019878U CN 206019878 U CN206019878 U CN 206019878U CN 201620984914 U CN201620984914 U CN 201620984914U CN 206019878 U CN206019878 U CN 206019878U
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Abstract
There is a problem of carrying on the back that island structure is unreasonable, elastica is easily damaged for existing micro-pressure sensor, this utility model provides a kind of DSOI micro-pressure sensors, and the technical scheme of its solve problem is：Island is arranged on front center position；Surrounding on island is provided with four Ge Liang areas；Liang Qu is arranged on the center of stress position at the edge of the sensor to island；Overload spacing zone is provided with immediately below island, is provided with atmospheric equilibrium hole immediately below the overload spacing zone；Atmospheric equilibrium hole and square window UNICOM；Film area is provided with around described Liang Qu and island, and the thickness in film area is the half on island.This utility model removes back of the body island structure from, using front beam film island structure, greatly improves the zero stability of micro-pressure sensor；The thickness in film area is only 1/2nd of Liang Qu and island area, and which acts on has stress concentration effect, improves the sensitivity of sensor；By transshipping the protection of spacing zone, it is ensured that device is not damaged.
Description
Technical field
This utility model is related to micro-pressure sensor field, more particularly to a kind of stability is high, sensitivity is high, non-damageable
Micro-pressure sensor.
Background technology
Micro-pressure sensor typically refers to the pressure transducer less than 10Kpa ranges.This kind of sensor requirements sensitivity is very high.
There will be very big electric signal output under very little pressure action.It is necessary to human body is faint when being used for example as respiration pickup
Breath signal detect.In order to reach this purpose, the core part-flexible silicon film production in micro-pressure sensor is obtained very
Thin.The disk that thickness is 600 microns through integrated circuit planar technique, corrosion window is overleaf made by lithography, front protecting is put
Corrode in silicon single crystal corrosive liquid, make silicon single crystal thickness in window only 10 microns are reduced to from 600 microns.Therefore in technique
Very difficult in making, traditional technique makes, and output capacity is also low, high cost, and selling price is also just high compared with other sensors of large measurement range.
At present, the micro-pressure sensor of International or National market sale has two kinds of structural shapes：A kind of referred to as c-type structure（Or
Claim silicon cup formula structure）, i.e. front also makes four p-type resistance and aluminum lead with planar technology in specific region, forms a favour
This electric bridge.When front or the pressurized back side, in resistance bridge, two resistance become big, and two resistance diminish, and produce and pressure
The electric signal output being directly proportional.The disadvantage of this structure be when transducer range little to a certain extent when, silicon fiml must be very
Thin, sufficiently high sensitivity is just can guarantee that, at this moment the big winding degree effect of elastica becomes prominent contradiction, makes the non-thread of sensor
Property index become big, certainty of measurement declines rapidly.Generally 2～3% or so.This sensor can be used only in less demanding occasion.
In order to overcome this disadvantage, second E type structure is generated（Also known as island membrane structure）, i.e., overleaf form one greatly
Island.The top surface on island and the low 5-10 microns of frame plane.As island is a rigid structure, when sensor elastica is pressurized, island is not
Can deform, it is taken as that back of the body island region internal stress does not change, and the surrounding elastomeric diaphragm area planted agent variable on island forms one
Individual linear change, it is ensured that bridge produces linear electric signal output under stress.This structure does not only have non-linear interior benefit
The effect of repaying, and there is overload position-limiting action on back of the body island.Therefore become the main product of micro-pressure sensor in the world at present.But it is this
Also there is following several respects shortcoming in structure：(1) bridge resistance is to use B+Ion implanting or the method system of boron impurity thermal diffusion doping
Make, four p-type resistance are made in the specific region of N-Si substrates, form whist bridge resistance.Due between bridge resistance
Electrical isolation is the backward impedance realization by P-N junction, and the P-N junction reverse current I of siliconrIn mainly by P-N junction barrier region
Generation electric current IgWith tracking current IsComposition.When the temperature increases, the valency electron in P-N junction barrier region is because of thermal excitation, from valency
Band transits to conduction band, becomes electron-hole pair.Under the backward voltage effect of P-N junction barrier region, electronics is swept to N areas by electric field,
Hole is swept to P areas by electric field, is connected with the reverse electrical source of external circuit, forms P-N junction reverse current Ir.Obtained by Principles of Transistors
Arrive, produce electric current Ig∝e- Eg/2kT, E in formulagIt is the energy gap of silicon, about 1.12ev；K is Boltzmann constant；T is that temperature becomes
Change value.So silicon P-N junction reverse current IrIt is by e with temperature- Eg/2kTIncrease.
Fig. 1 is silicon P-N junction reverse current variation with temperature curve.For the bad silicon P-N junction of some manufactures, its surface
Leakage current is main, and therefore when temperature is less high, its reverse current is varied with temperature slowly, only when temperature is raised, with
Cause generation electric current more than after tracking current, show temperature changing regularity as shown in Figure 1.
As can be seen here, in configuration aspects：（1）The sensor for making bridge resistance with silicon P-N junction diffusion resistance, in ambient temperature
Reverse current I during more than 110 DEG C, in sensor between two bridge resistancesrIt is room temperature reverse current Ir200 times of (27 DEG C)
More than.Here also do not include that the electric leakage rheology caused because manufacturing process is bad causes greatly the factor that sensor stability degenerates.
（2）The back of the body island formed using anisotropy rot etching method is a trapezium structure, and four sides are crystal faces, with bottom surface
54.74 degree of base angle is formed, back of the body island will occupy very big area.Especially when wafer thickness is very thick, contradiction is more projected.For example
When wafer thickness is 600 microns, the width shared by crystal face is W=600um/TAN (54.740)=600um/1.414443=
424.2um.The back of the body two, island crystal face accounts for width altogether for 848.4um.If counting width 848.4um shared by two crystal faces of frame,
Then sensor chip area has 1.7 × 1.7=2.89mm2It is depleted, makes output capacity step-down significantly.
(3) when elastic film thickness is less than 10um, oneself can not ignore with the back of the body island of elastica one deadweight effect.Back of the body island
Action of gravity on the varistor of peripheral elastomeric film, formed a larger intrinsic offset output signal.When sensor position
Put when changing, zero-bit output voltage also ensues change.This brings very big unstability to measurement.
（4）When positive pressure exceedes range, whole elastica is moved always, and elastica is easily destroyed.
In process aspect：(5) when micro-pressure sensor chip carries out anode linkage with glass, at the top of back of the body island with glass spaces only
5-10 microns, can produce very big statcoulomb power, island is pulled to glass surface, cause island to be bonded together with glass, make device
Part fails.
(6) when micro-pressure sensor chip is corroded, as the thickness error of 6 cun of wafers is ± 10um, so being difficult to protect
Card elastic film thickness of each chip on 6 cun of wafers is attained by required technical specification.Usually there is half and reach film
When thickness is required, and second half chip thickness occurs blocked up or excessively thin phenomenon.So being difficult control silicon film thickness, cause to produce
Go out rate low, be not suitable for large-scale production.
This utility model is aiming at disadvantages mentioned above and proposes new improved structure.
Content of the invention
There is a problem of carrying on the back that island structure is unreasonable, elastica is easily damaged for existing micro-pressure sensor, this practicality is newly
Type provides a kind of DSOI micro-pressure sensors.
A kind of DSOI micro-pressure sensors, the technical scheme of its solve problem is：Island is arranged on front center position；On island
Surrounding is provided with four Ge Liang areas；Liang Qu is arranged on the center of stress position at the edge of the sensor to island；Set immediately below island
Overload spacing zone is equipped with, immediately below the overload spacing zone, atmospheric equilibrium hole is provided with；Atmospheric equilibrium hole and square window UNICOM；Institute
Film area is provided with around Shu Liang areas and island, and the thickness in film area is the half on island.
The beneficial effects of the utility model are：This utility model removes back of the body island structure from, using front beam film island structure,
Greatly improve the zero stability of micro-pressure sensor；The thickness in film area is only 1/2nd of Liang Qu and island area.Which makees apparatus
There is stress concentration effect, improve the sensitivity of sensor；By transshipping the protection of spacing zone, it is ensured that device is not damaged.
Description of the drawings
Fig. 1 is silicon P-N junction reverse current variation with temperature curve.
Fig. 2 is this utility model plane graph.
A-A sectional views of the Fig. 3 for Fig. 2.
Fig. 4 is whist full-bridge circuit figure.
Wherein, 1. substrate；2. oxide layer I；3. spacing zone is transshipped；4. device film；5. oxide layer II；6.P types concentrated boron area；
7. resistance；8. aluminum presser feet；9. Liang Qu；10. film area；11. islands；12. atmospheric equilibrium holes；13. square windows；14. silicon nitride layers；
The big film of 15. back ofs the body.
Specific embodiment
A kind of DSOI micro-pressure sensors, the technical scheme of its solve problem is：Island 11 is arranged on front center position；On island
11 surrounding is provided with four Ge Liang areas 9；Beam area 9 is arranged on the center of stress position at the edge of the sensor to island 11；On island 11
Underface be provided with overload spacing zone 3, be provided with atmospheric equilibrium hole 12 immediately below the overload spacing zone 3；Atmospheric equilibrium hole 12
With 13 UNICOM of square window；Film area 10 is provided with around described beam area 9 and island 11, and the thickness in film area 10 is the one of island 11
Half.
A kind of described DSOI micro-pressure sensors, also include：Substrate 1, oxide layer I, the big film of the back of the body, device film 4, oxide layer
II5, p-type concentrated boron area 6, resistance 7 and aluminum presser feet 8, wherein, the both sides of substrate 1 arrange oxide layer I2, positioned at the oxide layer of upper plane
I2 arranges the big film 15 of the back of the body, to carry on the back and arrange oxide layer I2 on big film 15, arranges device film 4 in oxide layer I2, arranges oxidation in device film 4
Layer II5, is provided with p-type concentrated boron area 6 in oxide layer II5；Four resistance 7 and four aluminum presser feets 8 are set on p-type concentrated boron area 6, are formed
Whist full-bridge circuit；Described beam area 9, film area 10 and island 11 are located at the upper surface of the big film 15 of the back of the body.
The thickness of described p-type concentrated boron area 6 is 2～5 microns.
The gap of described overload spacing zone 3 is 5 ~ 8mm.
Silicon nitride layer 14 is additionally provided with below described oxide layer I 2 positioned at downside.
The island 11 is square, and the thickness on island 11 is identical with beam area 9, but the width in its width ratio beam area 9 will greatly very
Many.This structure substantially reduces big winding degree effect, improves the linearity.E type structure Zhong Bei island deadweight turn avoid simultaneously
Effect, substantially increases the zero stability of micro-pressure sensor.
The thickness in described film area 10 is only 1/2nd of beam area 9 and island 11.Which acts on has stress concentration effect, carries
The dependent variable of high sensitive resistance, so that improve the sensitivity of sensor.The thickness in adjusting film area 10 can adjust sensor
Sensitivity.By ICP dry etch process, the thickness in adjusting film area 10, the sensitivity of sensor just can be conveniently adjusted.
About 5～8 microns of the gap of described overload spacing zone 3.When positive pressure exceedes range, the central point of elastic region
Contact with atmospheric equilibrium hole 12 first.Central point of the central point of elastic region for island 11, when positive pressure exceedes range, whole
Individual elastic region will be touched with the bottom connection of overload spacing zone 3, elastica is no longer moved, it is ensured that elastica is not damaged.This
The overload restraining ability of structure can reach more than 300 times.
A kind of technique for preparing DSOI micro-pressure sensors, including：In about 600 microns of 1 surface heat growth of oxygen of silicon chip of thickness
Change layer I2, big 15 window of film of the back of the body, monocrystal silicon in wet method or dry etching window, depth about 6～8 are outputed by photoetching process front
Micron, then thermal growth oxide layer I2, and another silicon chip are bonded together using SBD techniques, then form device through attenuated polishing
Film 4, then thermal growth oxide layer II5, are bonded together using SBD techniques with another silicon chip on oxide layer II5 again, then are passed through
Attenuated polishing forms the p-type concentrated boron area 6 that thickness is 2～5 microns.Then on 6 surface of p-type concentrated boron area, flat using integrated circuit
Face technique, makes four p-type resistance 7 in specific region and aluminum presser feet 8 constitutes a resistance bridge, in 6 table of p-type concentrated boron area
Face, using photoetching process and ICP dry etch process, forms beam area 9, film area 10 and island 11 in the upper surface for carrying on the back big film 15,
Square window 13 is outputed by photoetching process in 1 back side of silicon chip, with monocrystal silicon in the KOH corrosive liquid corrosion windows of 40% concentration,
Until eroding to oxide layer I2, etch-stop.Oxide layer I2 on atmospheric equilibrium hole 12 is removed with dry etch process again, shape
Into high stable, high-sensitive DSOI micro-pressure sensors new construction.
Claims (6)
1. a kind of DSOI micro-pressure sensors, including island（11）, Liang Qu（9）, overload spacing zone（3）, atmospheric equilibrium hole（12）, square
Window（13）With film area（10）, it is characterized in that：Island（11）It is arranged on front center position；On island（11）Surrounding be provided with four
Liang Qu（9）；Liang Qu（9）The edge of the sensor is arranged on to island（11）Center of stress position；On island（11）Underface set
It is equipped with overload spacing zone（3）, the overload spacing zone（3）Underface is provided with atmospheric equilibrium hole（12）；Atmospheric equilibrium hole（12）With
Square window（13）UNICOM；Described Liang Qu（9）And island（11）Around be provided with film area（10）, film area（10）Thickness be island
（11）Half.
2. a kind of DSOI micro-pressure sensors according to claim 1, is characterized in that：Also include：Substrate（1）, oxide layer I
（2）, carry on the back big film（15）, device film（4）, oxide layer II（5）, p-type concentrated boron area（6）, resistance（7）With aluminum presser feet（8）, wherein, base
Piece（1）Both sides arrange oxide layer I（2）, positioned at oxide layer I of upper plane（2）The big film of the back of the body is set（15）, carry on the back big film（15）On set
Put oxide layer I（2）, oxide layer I（2）Upper setting device film（4）, device film（4）Upper setting oxide layer II（5）, oxide layer II
（5）On be provided with p-type concentrated boron area（6）；P-type concentrated boron area（6）Four resistance of upper setting（7）With four aluminum presser feets（8）, formed favour this
Special full-bridge circuit；Described Liang Qu（9）, film area（10）And island（11）It is located at the big film of the back of the body（15）Upper surface.
3. a kind of DSOI micro-pressure sensors according to claim 2, is characterized in that：Described p-type concentrated boron area（6）Thickness
For 2～5 microns.
4. a kind of DSOI micro-pressure sensors according to claim 1, is characterized in that：Described overload spacing zone（3）Between
Gap is 5 ~ 8mm.
5. a kind of DSOI micro-pressure sensors according to claim 2, is characterized in that：Described oxide layer I positioned at downside
（2）Lower section is additionally provided with silicon nitride layer（14）.
6. a kind of DSOI micro-pressure sensors according to claim 1, is characterized in that：The island（11）For square, island
（11）Thickness and Liang Qu（9）Identical, island（11）Width be more than Liang Qu（9）Width.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620984914.0U CN206019878U (en) | 2016-08-31 | 2016-08-31 | A kind of DSOI micro-pressure sensors |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620984914.0U CN206019878U (en) | 2016-08-31 | 2016-08-31 | A kind of DSOI micro-pressure sensors |
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| Publication Number | Publication Date |
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| CN206019878U true CN206019878U (en) | 2017-03-15 |
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ID=58254454
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| CN201620984914.0U Expired - Fee Related CN206019878U (en) | 2016-08-31 | 2016-08-31 | A kind of DSOI micro-pressure sensors |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108545691A (en) * | 2018-03-28 | 2018-09-18 | 广东和宇传感器有限公司 | Novel gauge pressure transducer and preparation method thereof |
-
2016
- 2016-08-31 CN CN201620984914.0U patent/CN206019878U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108545691A (en) * | 2018-03-28 | 2018-09-18 | 广东和宇传感器有限公司 | Novel gauge pressure transducer and preparation method thereof |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170315 Termination date: 20190831 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |