CN206014406U - 基于湿法预释放结构的mems红外光源 - Google Patents
基于湿法预释放结构的mems红外光源 Download PDFInfo
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CN106185784A (zh) * | 2016-08-31 | 2016-12-07 | 中国科学院微电子研究所 | 基于湿法预释放结构的mems红外光源及其制备方法 |
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CN106185784A (zh) * | 2016-08-31 | 2016-12-07 | 中国科学院微电子研究所 | 基于湿法预释放结构的mems红外光源及其制备方法 |
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Effective date of registration: 20201222 Address after: 510000 601, building a, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Patentee after: AoXin integrated circuit technology (Guangdong) Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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Effective date of registration: 20220425 Address after: 510000 room 710, Jianshe building, No. 348, Kaifa Avenue, Huangpu District, Guangzhou, Guangdong Patentee after: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd. Address before: 510000 601, building a, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Patentee before: AoXin integrated circuit technology (Guangdong) Co.,Ltd. |
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