CN206003791U - Photoelectric detector - Google Patents
Photoelectric detector Download PDFInfo
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- CN206003791U CN206003791U CN201621023537.0U CN201621023537U CN206003791U CN 206003791 U CN206003791 U CN 206003791U CN 201621023537 U CN201621023537 U CN 201621023537U CN 206003791 U CN206003791 U CN 206003791U
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- photoelectric detector
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- dielectric base
- layer
- silene
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Abstract
This utility model is related to photoelectric conversion technique, discloses a kind of photoelectric detector.In photoelectric detector of the present utility model, one layer of silene layer is set between dielectric base and filter glass, compares traditional structure, volume is less, and electricity conversion is higher, response speed faster.Additionally, setting anti-reflection film can increase infrared transmission intensity.
Description
Technical field
This utility model is related to photoelectric conversion technique, particularly to photoelectric detector.
Background technology
Photoelectric detector is all the photoelectric effect using material, and infrared photon is directly material bound state electron excitation
Become conduction electronics, participate in conductive, realize opto-electronic conversion, signal of telecommunication size is proportional to the number of photons absorbing.Applicable wave band
Scope is mainly limited by intrinsic photoelectric material band gap width.
Recently as the requirement to device miniaturization for the people, the performance requirement to undersized photoelectric detector
Propose huge challenge.
Content of the invention
The purpose of this utility model is to provide a kind of photoelectric detector, volume is less and electricity conversion more
Height, response speed is faster.
For solving above-mentioned technical problem, embodiment of the present utility model discloses a kind of photoelectric detector, infrared
Photon detector includes dielectric base, silene layer, filter glass, first electrode and second electrode；
Dielectric base and filter glass are respectively positioned at the both sides of silene layer；
The two ends of the silene layer that first electrode and second electrode are located on dielectric base surface respectively.
Compared with prior art, the main distinction and its effect are this utility model embodiment：
In photoelectric detector of the present utility model, one layer of silene is set between dielectric base and filter glass
Layer, compare traditional structure, volume is less, and service band is wider, electricity conversion is higher, response speed faster.
Further, setting anti-reflection film can increase infrared transmission intensity.
Further, dielectric base, silene layer, first electrode and second electrode are placed in vacuum environment so as to be subject to outer
The impact on boundary is less and has preferable stability.
Brief description
Fig. 1 is a kind of structural representation of photoelectric detector in this utility model first embodiment.
Fig. 2 is a kind of structural representation of photoelectric detector in this utility model first embodiment.
Specific embodiment
In the following description, in order that reader more fully understands that the application proposes many ins and outs.But, this
Even if the those of ordinary skill in field is appreciated that does not have these ins and outs and the many variations based on following embodiment
With modification it is also possible to realize each claim of the application technical scheme required for protection.
For making the purpose of this utility model, technical scheme and advantage clearer, new to this practicality below in conjunction with accompanying drawing
The embodiment of type is described in further detail.
This utility model first embodiment is related to a kind of photoelectric detector.Fig. 1 is this photoelectric detector
Structural representation.As shown in figure 1, this photoelectric detector includes dielectric base 1, silene layer 2, filter glass 5, first electrode
3 and second electrode 4.
Dielectric base 1 and filter glass 5 are respectively positioned at the both sides of silene layer 2.Alternatively, dielectric base 1 can for SiC or
Si.Silene layer 2 is the core of this photoelectric detector, as sensitive material；Filter glass 5 is used for strengthening infrared ray simultaneously
Filter visible ray.It is appreciated that silene is disclosed in many papers, it is known materials.
The two ends of the silene layer 2 that first electrode 3 and second electrode 4 are located on dielectric base 1 surface respectively.Alternatively,
One electrode 3 and second electrode 4 can be copper, aluminum, the non-photosensitive materials such as chromium, and its position can be any with what silene layer 2 contacted
Position, as long as electric current can be produced, is not limited to the position shown in Fig. 1 and Fig. 2.
In a preference, dielectric base (1), silene layer (2), first electrode (3) and second electrode (4) are placed in vacuum
In container, filter glass (5) is placed in outside this Dewar vessel.Silene layer and dielectric base can be that the entirety that can not be split is made
For the main part of detector, it is placed in vacuum environment so as to be subject to external influence less, there is preferable stability.
In alternative embodiments, above-mentioned photoelectric detector also includes anti-reflection film (6), anti-reflection film (6) with respect to
Silene layer (2) is located at the opposite side of filter glass (5), as shown in Figure 2.This anti-reflection film can be used as an optics with filtration eyeglass
Element, anti-reflection film is used for increasing infrared transmission intensity, filters eyeglass and is used for strengthening infrared ray, to improve the sensitivity of device.On
The relative distance stated between optical element and the main part of above-mentioned detector is not fixed.
The spectral response scope of above-mentioned photoelectric detector is wide, and its service band is 0.7 μm -25 μm.It is appreciated that
In the various embodiments of the utility model, the selection of above-mentioned anti-reflection film and filtration eyeglass is according to detector institute service band not
Different together.
, incident illumination, through anti-reflection film and optical filter, reaches infrared photosensitive layer silene taking the photoelectric detector of Fig. 2 as a example
Layer, by infrared excitation, in silene layer, conduction electronics increases, thus electrical conductivity increases, and under biasing outside, causes electricity in device
The increase of stream.Compared to conventional photonic detector, photoelectric detector of the present utility model is due in dielectric base and optical filtering
Only have one layer of very thin silene layer between eyeglass, thus structure be simpler, volume is less, and HONGGUANG, near-infrared and in red
Outskirt all has higher optoelectronic transformation efficiency, and (tradition just has higher electricity conversion in specific wavelength band：Sulfuration
Lead detector (1um～3um), lead selenide detector (3um～5um)) and faster response speed, thus reducing energy consumption.Cause
This, photoelectric detector of the present utility model as new photon detector can be used for infrared acquisition, guidance, fuse,
In the various application such as tracking or early warning.
Can be seen from above, in photoelectric detector of the present utility model, between dielectric base and filter glass
One layer of silene layer of setting, compares traditional structure, volume is less, and service band is wider, electricity conversion is higher, response is fast
Degree is faster.
It should be noted that in the claim and description of this patent, such as first and second or the like relation
Term is used merely to make a distinction an entity or operation with another entity or operation, and not necessarily requires or imply
There is any this actual relation or order between these entities or operation.And, term " inclusion ", "comprising" or its
Any other variant is intended to comprising of nonexcludability so that include a series of process of key elements, method, article or
Equipment not only includes those key elements, but also includes other key elements being not expressly set out, or also include for this process,
Method, article or the intrinsic key element of equipment.In the absence of more restrictions, by wanting that sentence " including " limits
It is not excluded that also there is other identical element in process, method, article or the equipment including described key element in element.
Although by referring to some preferred implementations of the present utility model, this utility model has been shown and
Description, but it will be understood by those skilled in the art that can to it, various changes can be made in the form and details, and not inclined
From spirit and scope of the present utility model.
Claims (7)
1. a kind of photoelectric detector is it is characterised in that described photoelectric detector includes dielectric base (1), silene layer
(2), filter glass (5), first electrode (3) and second electrode (4)；
Described dielectric base (1) and described filter glass (5) are respectively positioned at the both sides of described silene layer (2)；
Described first electrode (3) and described second electrode (4) the described silene layer on described dielectric base (1) surface respectively
(2) two ends.
2. photoelectric detector according to claim 1 is it is characterised in that described photoelectric detector also includes increasing
Permeable membrane (6), described anti-reflection film (6) is located at the opposite side of described filter glass (5) with respect to described silene layer (2).
3. photoelectric detector according to claim 1 is it is characterised in that described dielectric base (1) is SiO2Or Si.
4. photoelectric detector according to claim 1 is it is characterised in that described first electrode (3) and described second
Electrode (4) is selected from copper, aluminum, one of chromium.
5. photoelectric detector according to claim 1 is it is characterised in that described dielectric base (1), described silene layer
(2), described first electrode (3) and described second electrode (4) are placed in Dewar vessel, and described filter glass (5) is placed in described true
Outside empty.
6. photoelectric detector according to claim 1 is it is characterised in that the operating wave of described photoelectric detector
Section is 0.7 μm -25 μm.
7. photoelectric detector according to claim 1 is it is characterised in that described photoelectric detector is for infrared
Detection, guidance, fuse, tracking or early warning.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621023537.0U CN206003791U (en) | 2016-08-31 | 2016-08-31 | Photoelectric detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621023537.0U CN206003791U (en) | 2016-08-31 | 2016-08-31 | Photoelectric detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206003791U true CN206003791U (en) | 2017-03-08 |
Family
ID=58193652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621023537.0U Active CN206003791U (en) | 2016-08-31 | 2016-08-31 | Photoelectric detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206003791U (en) |
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2016
- 2016-08-31 CN CN201621023537.0U patent/CN206003791U/en active Active
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