CN205985015U - Back of body passivation battery back laser fluting pattern - Google Patents
Back of body passivation battery back laser fluting pattern Download PDFInfo
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- CN205985015U CN205985015U CN201620934106.3U CN201620934106U CN205985015U CN 205985015 U CN205985015 U CN 205985015U CN 201620934106 U CN201620934106 U CN 201620934106U CN 205985015 U CN205985015 U CN 205985015U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Photovoltaic Devices (AREA)
Abstract
The utility model relates to a solar cell production field specifically is a back of body passivation battery back laser fluting pattern. Back of body passivation battery back laser fluting pattern, constitute by a plurality of double -lines fluting by silicon chip back fluting, interval between adjacent two double -lines fluting is 1.3 millimeters, the double -line fluting comprises parallel each other forefront and second -line, there all have the horizontal line on forefront and the second -line to be crisscross to extending between the two each other, the length of every horizontal line is 0.7 millimeter on forefront and the second -line, the distance of two piece adjacent horizontal lines is 0.5 millimeter on the forefront, the distance of two piece adjacent horizontal lines is 0.5 millimeter on the forefront, distance between forefront and the second -line is 1 millimeter. After using new figure, back of the body passivation single crystal PERC battery can effectively reduce rs, carries high conversion efficiency.
Description
Technical field
This utility model is related to manufacture of solar cells field, specifically a kind of back of the body passivation cell backside laser fluting figure
Case.
Background technology
Back of the body passivation technology generally covers one layer of insulating protective film at the cell piece back side, before printing, needs to use laser equipment
Is slotted in the back side it is ensured that the aluminium paste after being printed contacts sintering with silicon chip forms back electrode, because back side aluminium paste only can swash
Form localized contact with silicon chip sintering, different from common batteries piece back side Full connected sintering, in cell piece parameter at light fluting
Intuitively it is reflected as series resistance Rs（0.0038）Compare common single-chip（0.0021）There is very big rising.By opening to backside laser
The design optimization of groove pattern, can effectively reduce cell piece Rs, improve single crystal battery conversion efficiency again.
Content of the invention
Technical problem to be solved in the utility model is：How to be slotted by back and reduce cell piece Rs, improve monocrystalline
Battery conversion efficiency.
This utility model be employed technical scheme comprise that：Back of the body passivation cell backside laser grooved pattern, is opened by silicon chip back
Groove is made up of multiple two-wires fluting, and the spacing between two neighboring two-wire fluting is 1.3 millimeters, and two-wire is slotted by parallel to each other
First Line and the second line composition, First Line and the second line have horizontal line interlaced with each other to extending between the two, First Line and the
On two wires, the length of every horizontal line is 0.7 millimeter, and on First Line, the distance of adjacent two horizontal lines is 0.5 millimeter, phase on First Line
The distance of adjacent two horizontal lines is 0.5 millimeter, and the distance between First Line and the second line are 1 millimeter.
As a kind of optimal way：Each two-wire fluting is 1.3 millimeters apart from silicon chip edge distance.
As a kind of optimal way：First Line, the second line, the width of horizontal line are all 30 nanometers.
The beneficial effects of the utility model are：Under equipment existence conditionses, design new backside laser Grooving patterns.Use
After new figure, back of the body passivation monocrystalline PERC battery can effectively reduce Rs, improves conversion efficiency.New figure does not have extra equipment instrument
Device puts into and gains in depth of comprehension auxiliary material cost input.
Brief description
Fig. 1 is grooved pattern schematic diagram of the present utility model；
Wherein, 1, two-wire fluting, 2, First Line, the 3, second line, 4, horizontal line.
Specific embodiment
As shown in figure 1, this utility model back lbg is using hot spot, and the laser instrument for 30nm completes, multiple two-wires are opened
Groove substitutes original single line fluting, and the spacing between two neighboring two-wire fluting is 1.3 millimeters, and two-wire is slotted by parallel to each other
First Line and the second line composition, First Line and the second line have horizontal line interlaced with each other to extending between the two, First Line and the
On two wires, the length of every horizontal line is 0.7 millimeter, and on First Line, the distance of adjacent two horizontal lines is 0.5 millimeter, phase on First Line
The distance of adjacent two horizontal lines is 0.5 millimeter, and the distance between First Line and the second line are 1 millimeter.Each two-wire is slotted apart from silicon
Piece Edge Distance is 1.3 millimeters.
This utility model, by improving original laser single line notching construction, effectively reduces efficient monocrystalline PERC electricity
The Rs in pond, improves FF, finally improves battery conversion efficiency about 0.1%.
Claims (3)
1. the back of the body passivation cell backside laser grooved pattern it is characterised in that：It is made up of multiple two-wires fluting silicon chip back fluting,
Spacing between two neighboring two-wire fluting is 1.3 millimeters, and two-wire fluting is made up of First Line parallel to each other and the second line, the
There is horizontal line interlaced with each other to extending between the two on one line and the second line, on First Line and the second line, the length of every horizontal line is
0.7 millimeter, on First Line, the distance of adjacent two horizontal lines is 0.5 millimeter, and on First Line, the distance of adjacent two horizontal lines is 0.5 milli
Rice, the distance between First Line and the second line are 1 millimeter.
2. according to claim 1 the back of the body passivation cell backside laser grooved pattern it is characterised in that：Each two-wire fluting away from
For 1.3 millimeters with a distance from silicon chip edge.
3. according to claim 1 the back of the body passivation cell backside laser grooved pattern it is characterised in that：First Line, the second line,
The width of horizontal line is all 30 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620934106.3U CN205985015U (en) | 2016-08-25 | 2016-08-25 | Back of body passivation battery back laser fluting pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620934106.3U CN205985015U (en) | 2016-08-25 | 2016-08-25 | Back of body passivation battery back laser fluting pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205985015U true CN205985015U (en) | 2017-02-22 |
Family
ID=58033950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620934106.3U Active CN205985015U (en) | 2016-08-25 | 2016-08-25 | Back of body passivation battery back laser fluting pattern |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205985015U (en) |
-
2016
- 2016-08-25 CN CN201620934106.3U patent/CN205985015U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |