CN205945654U - C wave band pulse power amplifier - Google Patents
C wave band pulse power amplifier Download PDFInfo
- Publication number
- CN205945654U CN205945654U CN201620969278.4U CN201620969278U CN205945654U CN 205945654 U CN205945654 U CN 205945654U CN 201620969278 U CN201620969278 U CN 201620969278U CN 205945654 U CN205945654 U CN 205945654U
- Authority
- CN
- China
- Prior art keywords
- circuit
- pulse
- frequency
- power
- power amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Abstract
The utility model discloses a C wave band pulse power amplifier, its installed part that includes dot frequency source, low frequency pulse treatment circuit, little signal amplification circuit, power amplifier circuit, the synthetic amplifier circuit of final stage power and install the PCB board is equipped with output and connects and punching electric capacity on, it has four cavitys to cut apart in the installed part, all is equipped with a signal power port on each cavity, dot frequency source and low frequency pulse processing integrated circuit are in same cavity, and the synthetic amplifier circuit of little signal amplification circuit, power amplifier circuit and final stage power is integrated in different cavitys respectively, be equipped with a RF switch in the integrated cavity that has some frequency sources and a low frequency pulse treatment circuit, the RF switch is high -speed radio frequency microwave switch, effect height, power low power dissipation are kept apart in this C wave band pulse power amplifier shielding, and the product can the work of long -term stability and reliability ground.
Description
Technical field
The utility model is specifically related to a kind of C-band pulse power amplifier.
Background technology
C-band 100W pulse power amplifier is one of aircraft airborne electronic aid to navigation, is mainly used in survey aircraft extremely
The distance of Earth Surface, for true altitude during real-time survey aircraft flight;However, the C-band in currently available technology
100W pulse power amplifier haves such problems as between each circuit that shielding isolation effect is poor, power supply power consumption is high, reduces at a distance
The sensitivity of reason transmission receiver, increases test error, and product is unable to long time stability work.
Utility model content
The purpose of this utility model is to provide a kind of C-band pulse power amplifier, to solve product mentioned above not
The problem of energy long time stability work.
For solving above-mentioned technical problem, the utility model provides a kind of C-band pulse power amplifier, and it includes dot frequency
Source, low-frequency pulse process circuit, small signal amplification circuit, drive amplification circuit, final power synthesize amplifying circuit and are provided with
The installed part of pcb board, installed part is provided with out splice going splice and feed-through capacitor;In installed part, segmentation has four cavitys, on each cavity
It is equipped with a signal power source port;Dot frequency source and low-frequency pulse process circuit are integrated in same cavity, low level signal amplification
Circuit, drive amplification circuit and final power synthesis amplifying circuit are integrated in different cavity body respectively;Be integrated with dot frequency source and
It is provided with a RF switch, RF switch is high-speed radio-frequency microwave switch in the cavity of low-frequency pulse process circuit.
Further, dot frequency source, RF switch, drive amplification circuit and final power synthesis amplifying circuit pass through signal
Power port is sequentially connected;Low-frequency pulse process circuit respectively with dot frequency source, RF switch, drive amplification circuit and final stage work(
Rate synthesis amplifying circuit is connected by signal power source port.
Further, low-frequency pulse process circuit include RF switch driving pulse circuit and with RF switch driving pulse
The amplifier tube modulation impulse circuit that circuit connects.
Further, it is provided with together frequency combiner in the cavity being integrated with final power synthesis amplifying circuit.
Further, the amplifier tube that final power synthesizes used in amplifying circuit is GaAs amplifier tube.
Further, out splice going splice is TNC-K out splice going splice.
Further, feed-through capacitor is NW-9330-102/100 feed-through capacitor.
The beneficial effects of the utility model are:The dot frequency source of this C-band pulse power amplifier and low-frequency pulse are processed
Circuit is integrated in same cavity, and small signal amplification circuit, drive amplification circuit and final power synthesis amplifying circuit are respectively
It is integrated in different cavity body;By rationally integrated to each circuit, reduce influencing each other between circuit, increase shielding isolation effect
Really;And switched using the frequency microwave of high speed, its switching speed, within 10ns, can protect pulse and working pulse delay inequality
2us, can ensure that two pulse raising and lowerings there are not coincidence point well, be effectively reduced power supply power consumption, so that product steadily in the long term may be used
The work leaned on.
Brief description
Fig. 1 is the structural representation of C-band pulse power amplifier.
Fig. 2 is the internal circuit attachment structure schematic diagram of C-band pulse power amplifier.
Wherein:1st, final power synthesis amplifying circuit;2nd, dot frequency source;3rd, small signal amplification circuit;4th, drive amplification electricity
Road;5th, low-frequency pulse process circuit;6th, installed part;7th, feed-through capacitor;8th, out splice going splice;9th, RF switch;10th, cavity.
Specific embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is carried out
Clearly and completely describe it is clear that described embodiment is only a kind of embodiment of the utility model, rather than whole realities
Apply example.Based on the embodiment in the utility model, those of ordinary skill in the art institute under the premise of not making creative work
The every other embodiment obtaining, broadly falls into protection domain of the present utility model.
For the sake of simplicity, eliminate the technology general knowledge well known to this technical field technical staff in herein below.
As depicted in figs. 1 and 2, this C-band pulse power amplifier include dot frequency source 2, low-frequency pulse process circuit 5,
Small signal amplification circuit 3, drive amplification circuit 4, final power synthesize amplifying circuit 1 and the installed part 6 being provided with pcb board, peace
Piece installing 6 is provided with out splice going splice 8 and feed-through capacitor 7, and preferably out splice going splice 8 is TNC-K out splice going splice, and feed-through capacitor 7 is NW-
9330-102/100 feed-through capacitor.
In being embodied as, segmentation in installed part 6 has four cavitys 10, and each cavity 10 is equipped with a signal power source end
Mouthful, the signal power source for realizing each cavity 10 connects;Wherein, dot frequency source 2 and low-frequency pulse process circuit 5 are integrated in together
In one cavity 10, small signal amplification circuit 3, drive amplification circuit 4 and final power synthesis amplifying circuit 1 are integrated in not respectively
With in cavity 10;By rationally integrated to each circuit, reduce influencing each other between circuit in each chamber, increase shielding isolation effect
Really.
In practical operation, dot frequency source 2 and low-frequency pulse process circuit 5 are integrated on a pcb board altogether, and small-signal is put
Big circuit 3 and drive amplification circuit 4 are integrated in a pcb board altogether, and final power synthesis amplifying circuit 1 is integrated in a pcb board
On;Effectively frequency electromagnetic waves can be carried out with shielding isolation, reduce impact each other.
Being integrated with the cavity 10 of dot frequency source 2 and low-frequency pulse process circuit 5 of this C-band pulse power amplifier sets
There is a RF switch 9;In being embodied as, preferably RF switch 9 is high-speed radio-frequency microwave switch, in being embodied as, adopts
The frequency microwave switch of high speed, within being characterized in switching speed 10ns, can protect pulse and working pulse delay inequality 2us,
Can ensure that two pulse raising and lowerings there are not coincidence point well, be effectively reduced power supply power consumption, make product long time stability
Work.
In being embodied as, by signal power source port by dot frequency source 2, RF switch 9, drive amplification circuit 4 and end
Level power combing amplifying circuit 1 is sequentially connected;Low-frequency pulse process circuit 5 is put with dot frequency source 2, RF switch 9, driving respectively
Big circuit 4 and final power synthesis amplifying circuit 1 are connected by signal power source port;Wherein, dot frequency source 2 can adopt shielding box
Envelope is covered, and signal power source port can adopt EMC element, prevents the produced interference of electromagnetic conductive.
In practical operation, low-frequency pulse process circuit 5 is included RF switch driving pulse circuit and is driven with RF switch
The amplifier tube modulation impulse circuit that moving pulse circuit connects;Wherein, output pulse is modulated by RF switch driving pulse circuit
Signal, modulates work and the cut-off state of the amplifier tube used in impulse circuit control circuit by amplifier tube;And radio frequency opens
Close driving pulse circuit to realize using double not gates at a high speed, amplifier tube modulation impulse circuit can be realized using high speed metal-oxide-semiconductor;It is adopted
Use dipulse control, the time that rises up and down is fast, and load capacity is strong, ensure that product works long hours reliable and stable.
Being integrated with the cavity 10 of final power synthesis amplifying circuit 1 of this C-band pulse power amplifier is provided with together
Frequency combiner, it has the features such as amplitude-phase consistency is good, Insertion Loss is little and standing wave is good, and then improves combined coefficient;Final power
Amplifier tube used in synthesis amplifying circuit 1 is GaAs amplifier tube, and in being embodied as, its quiescent current is in the circuit about
10A, reduces power consumption, improves overall efficiency, has ensured the reliability Work of product.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or new using this practicality
Type.Multiple modifications to these embodiments will make it will be apparent that defined herein for those skilled in the art
General Principle can realize in other embodiments in the case of the spirit or scope without departing from utility model.Therefore, originally
Utility model will not be limited and the embodiments shown herein, and is to fit to and principles disclosed herein and novelty
The property consistent scope the widest of feature.
Claims (7)
1. a kind of C-band pulse power amplifier it is characterised in that:Including dot frequency source, low-frequency pulse process circuit, small-signal
Amplifying circuit, drive amplification circuit, final power synthesize amplifying circuit and the installed part being provided with pcb board, on described installed part
It is provided with out splice going splice and feed-through capacitor;In described installed part, segmentation has four cavitys, and described each cavity is provided with signal electricity
Source port;
Described dot frequency source and low-frequency pulse process circuit are integrated in same cavity, described small signal amplification circuit, driving
Amplifying circuit and final power synthesis amplifying circuit are integrated in different cavity body respectively;It is integrated with dot frequency source and low-frequency pulse
It is provided with a RF switch, described RF switch is high-speed radio-frequency microwave switch in the cavity of reason circuit.
2. C-band pulse power amplifier according to claim 1 it is characterised in that:Described dot frequency source, radio frequency are opened
Close, drive amplification circuit and final power synthesis amplifying circuit are sequentially connected by signal power source port;At described low-frequency pulse
Reason circuit passes through signal with described dot frequency source, RF switch, drive amplification circuit and final power synthesis amplifying circuit respectively
Power port connects.
3. C-band pulse power amplifier according to claim 1 it is characterised in that:Described low-frequency pulse process circuit
The amplifier tube modulation impulse circuit be connected including RF switch driving pulse circuit and with described RF switch driving pulse circuit.
4. C-band pulse power amplifier according to claim 1 it is characterised in that:It is integrated with described final power to close
It is provided with together frequency combiner in the cavity becoming amplifying circuit.
5. C-band pulse power amplifier according to claim 1 it is characterised in that:Described final power synthesis is amplified
Amplifier tube used in circuit is GaAs amplifier tube.
6. C-band pulse power amplifier according to claim 1 it is characterised in that:Described out splice going splice is that TNC-K is defeated
Go out joint.
7. the C-band pulse power amplifier according to claim 1 or 6 it is characterised in that:Described feed-through capacitor is NW-
9330-102/100 feed-through capacitor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201620969278.4U CN205945654U (en) | 2016-08-29 | 2016-08-29 | C wave band pulse power amplifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201620969278.4U CN205945654U (en) | 2016-08-29 | 2016-08-29 | C wave band pulse power amplifier |
Publications (1)
Publication Number | Publication Date |
---|---|
CN205945654U true CN205945654U (en) | 2017-02-08 |
Family
ID=57952981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201620969278.4U Active CN205945654U (en) | 2016-08-29 | 2016-08-29 | C wave band pulse power amplifier |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN205945654U (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107104645A (en) * | 2017-04-12 | 2017-08-29 | 中国电子科技集团公司第三十八研究所 | One kind is based on single balun Miniature power amplifier |
CN108112184A (en) * | 2017-11-02 | 2018-06-01 | 安徽华东光电技术研究所 | Manufacturing method of S-band 100-watt pulse power amplifier |
CN109541554A (en) * | 2018-11-30 | 2019-03-29 | 安徽四创电子股份有限公司 | A kind of multipoint positioning monitoring system emitter |
-
2016
- 2016-08-29 CN CN201620969278.4U patent/CN205945654U/en active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107104645A (en) * | 2017-04-12 | 2017-08-29 | 中国电子科技集团公司第三十八研究所 | One kind is based on single balun Miniature power amplifier |
CN108112184A (en) * | 2017-11-02 | 2018-06-01 | 安徽华东光电技术研究所 | Manufacturing method of S-band 100-watt pulse power amplifier |
CN108112184B (en) * | 2017-11-02 | 2020-08-04 | 安徽华东光电技术研究所 | Manufacturing method of S-band 100-watt pulse power amplifier |
CN109541554A (en) * | 2018-11-30 | 2019-03-29 | 安徽四创电子股份有限公司 | A kind of multipoint positioning monitoring system emitter |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN205945654U (en) | C wave band pulse power amplifier | |
CN203933546U (en) | A kind of radio-frequency power amplifier match circuit | |
CN108718188A (en) | A kind of Doherty power amplifier with high efficient broadband and its design method | |
CN104333334B (en) | Satellite navigation aviation strengthening system broadband low noise radio frequency amplifier and transmitting device | |
CN109274342A (en) | Power synthesis amplifier suitable for millimeter-wave communication system power application | |
CN104660171A (en) | Improved subharmonic mixer based on coplanar waveguide transmission line | |
CN103050356B (en) | High-power millimeter wave and terahertz wave signal frequency doubling device | |
CN102891665B (en) | The spectrum control method of all solid-state transmitter pulse modulation waveform | |
CN105958944A (en) | Terahertz frequency-doubled balanced type frequency multiplication circuit | |
CN207010631U (en) | A kind of multi-octave wideband power amplifer | |
CN103840770B (en) | Terahertz wave band quadrupler | |
CN112583357A (en) | High-efficiency high-power E-type radio frequency power amplifier | |
CN204928761U (en) | Power amplification subassembly and TR subassembly | |
CN204316450U (en) | A kind of microwave frequency conversion power amplifier | |
CN204068871U (en) | A kind of low noise sound pitch dynamic waveguide amplitude limit low noise amplifier | |
CN114665823B (en) | Terahertz frequency tripling circuit structure of return wave type | |
CN205657654U (en) | Super wideband power amplifier | |
CN110212874A (en) | A kind of millimeter wave linear power amplifier chip | |
CN104426411A (en) | Single-resonance high-frequency high-voltage power supply | |
CN204103905U (en) | A kind of C-band high-temperature superconductor receiving front-end | |
CN204967795U (en) | Hypophase high L to general frequency synthesizer of C wave band of isolation that makes an uproar | |
CN202978828U (en) | Output circuit structure of radio-frequency power amplifier | |
CN209560070U (en) | A kind of power amplifier in transmitter module | |
CN202513878U (en) | Millimeter wave active frequency multiplier integrated circuit | |
CN208190650U (en) | Wireless communication chips performance boost circuit |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |