CN205944368U - High -power little wave structure of spine transmission line - Google Patents

High -power little wave structure of spine transmission line Download PDF

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Publication number
CN205944368U
CN205944368U CN201620965868.XU CN201620965868U CN205944368U CN 205944368 U CN205944368 U CN 205944368U CN 201620965868 U CN201620965868 U CN 201620965868U CN 205944368 U CN205944368 U CN 205944368U
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China
Prior art keywords
transmission line
ridge
signalling channel
powered microwaves
axis
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CN201620965868.XU
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Chinese (zh)
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王清源
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Chengdu Sainaweite Technology Co ltd
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Chengdu Saina Microwave Technology Co Ltd
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Abstract

The utility model discloses a high power multichannel microwave device, for example harmonic suppressor, be used for the synthetic merit of power to divide ware and combiner, attenuator etc. High -power little wave structure of spine transmission line, including two sections transmission line (1) that are located the dead in line of input and output respectively, run through every section transmission line (1) two at least metallic object A (2) and two piece at least signalling channel (3) on the surface are located every signalling channel (3) inside one piece at least metal spine (4) or a series of metallic object B (5). The center of its axis of high -power little wave structure of spine transmission line can be divided into two sections, be provided with other microwave device between two sections, including but not limited to PIN switch tube, PIN limiter diode, power amplifier etc. Constitute the poor ware of clipper -limiter, attenuator, switch and power sum etc. Extensively be arranged in radar, missile guidance and various that mobile communication system.

Description

Ridge transmission line HIGH-POWERED MICROWAVES structure
Technical field
This utility model is related to a kind of microwave device, specifically, is to be related to a class compact high power device, including humorous Ripple rejects trap, the power splitter of power combing and combiner, waveguide switch circuit, waveguide amplitude limiter and waveguide attenuator Deng.
Background technology
In art of microwave filters, the suppression problem of parasitic passband is always the focus of industry concern.Remote in order to obtain From the parasitic passband of working passband, need to make the frequency of the higher mode of the resonator cavity of composition wave filter be significantly larger than its mode of operation Frequency.The method generally adopting is that depth loading capacitance metal column, metal column add metal dish or metal in resonator cavity Post adds metal dish and adds metal cylinder.For certain operating frequency, this will lead to reducing of the size of resonator cavity, thus lead to by The drastically decline of this power capacity of wave filter constituting.
In order to improve the power capacity of microwave device, a kind of scheme is using power splitter, several microwave filters are in parallel, Again by same power splitter by each microwave filter combining.The shortcoming of this scheme is that the volume of integral device is larger.
In terms of power combiner, traditional power division network and power synthesis network volume are big.Using waveguide input and output When, need additional waveguide-to-coaxial adapter and volume shared by waveguide-to-coaxial adapter is too big.
Waveguide switch, waveguide amplitude limiter and waveguide attenuator are subject to the Power Limitation of diode, and high power easily punctures.
Utility model content
The purpose of this utility model is to provide a kind of compact ridge transmission line HIGH-POWERED MICROWAVES structure, improves microwave device Power capacity.
To achieve these goals, the technical solution adopted in the utility model is:
Ridge transmission line HIGH-POWERED MICROWAVES structure, including being located at input and two sections of transmission lines of outfan respectively, two sections transmit The axis of line overlaps.
In order to reduce the volume of device, the waveguide segment adopting shape of cross section gradual change with conventional waveguide device is realized mating Method different, described transmission line of the present utility model is uniform transmission line;Described uniform transmission line be shape of cross section not with Its axis and the transmission line that changes.
The Broadband Matching of described ridge transmission line HIGH-POWERED MICROWAVES structure is come real using the metallic object A on every section of transmission line Existing, therefore, also include running through at least two metallic object A or only one end and the transmission line outer surface of described every section of transmission line surface At least two cylindrical metal body A of the connection or at least two cylindrical metal body A that only one end is connected with transmission line inner bottom surface; The axis direction of described metallic object A is vertical with the axis direction of described transmission line.
In order to connect two transmission lines and increase the power capacity of described ridge transmission line HIGH-POWERED MICROWAVES structure, also include to Few two signalling channels;The axis direction of described every signalling channel is parallel with the axis direction of described transmission line, every signal Channel connection is located at two sections of transmission lines of input and outfan.
For the bandwidth of operation of ridge transmission line HIGH-POWERED MICROWAVES structure described in further broadening, each described cylindrical metal Body A is correspondingly arranged at the near axis of described a certain signalling channel, any point on cylindrical metal body A axis with corresponding The length of the line of any point on the axis of signalling channel projection in the X direction is less than the signalling channel being located in X side To Breadth Maximum 1/3.
Except in addition at the transmission line at its two ends, there is no any other signal coupling channel between described signalling channel. This point is that this utility model is different from some traditional microwave devices, the such as place of E face waveguide filter.
In order to allow signal pass through a transmission line in very wide frequency range to another transmission line, also include being located at At least one metal ridge within every signalling channel;Described metal ridge is column structure, its axis direction and described transmission line Axis direction parallel and be only connected with the side of signalling channel being located in one side.
Described metal ridge is only connected with the outer surface of the signalling channel being located.Or the described metal ridge only signal with place The inner bottom surface of passage connects.It is for the axis of described ridge transmission line HIGH-POWERED MICROWAVES structure inside and outside herein. The direction pointing to the axis of described ridge transmission line HIGH-POWERED MICROWAVES structure is interior direction, leaves described ridge transmission line HIGH-POWERED MICROWAVES The direction of the axis of structure is outer direction.Outer surface is face pointed by outer direction, inner bottom surface i.e. face pointed by interior direction.
Ridge transmission line HIGH-POWERED MICROWAVES structure is to be internally provided with gold positioned at every signalling channel for harmonic supression filter Belong to body B;Described metallic object B is only connected with the outer surface of the signalling channel being located.At this moment, there is metal ridge inside signalling channel.But Preferably design, there is no any metal ridge inside signalling channel.
As preferably designing, described metallic object B can also be only connected with the inner bottom surface of the signalling channel being located.
For rectangular waveguide ridge transmission line HIGH-POWERED MICROWAVES structure, the cross section face shape of the outer conductor of all transmission lines For rectangle.At this moment, the fundamental mode operation pattern of described transmission line is TE10 pattern.
The number of described signalling channel is 8 or 12.The number of described signalling channel is 8 or 12;Described signal Passage is divided into two groups, is located at respectively on two broadsides of described rectangular waveguide transmission line.The number setting of described signalling channel Integral multiple for 4, such as 8, and the numerals such as 3,6 will be avoided, it is intended to avoid arrange signalling channel in the center of waveguide broadside.? The center setting signalling channel of waveguide broadside, the electric field of its electromagnetic wave will be concentrated here, lead under device power capacity Fall.Can be with equidistantly distributed between signalling channel.
In order to increase the power capacity of device and be easy to Modeling Calculation, described ridge transmission line HIGH-POWERED MICROWAVES structure with respect to YZ plane is mirrored into symmetrically.
Described ridge transmission line HIGH-POWERED MICROWAVES structure can also be required to be mirrored into symmetrically with respect to XZ plane simultaneously.
The shape of cross section of the outer conductor of all transmission lines is the equal equilateral triangle of the length of side, square or other polygon Shape.
All transmission lines can be the regular polygon waveguide of hollow.At this moment, the corresponding circle of the fundamental mode operation pattern in transmission line TM0n pattern in waveguide.
All of transmission line also includes inner wire;All of transmission line for outer conductor be equilateral triangle, square or its Its polygonal coaxial configuration.At this moment, the TEM ripple in the corresponding coaxial line of the fundamental mode operation pattern in transmission line.
For the ease of processing and realizing the miniaturization of device, the outer surface of all of signalling channel and all of transmission line Outer surface all flushes.
Described ridge transmission line HIGH-POWERED MICROWAVES structure can be used for constituting powerful switch, amplitude limiter, attenuator and work( Rate amplifier.At this moment, above-mentioned ridge transmission line HIGH-POWERED MICROWAVES structure is divided into two sections along the center of Z axis;It is provided between two sections Other microwave devices, including but not limited to PIN switching tube, PIN limiter diode, power amplifier etc..
Operation principle of the present utility model is summarized as follows:The realization of many high-power pulsed ion beams needs in standard rectangular ripple Reduce the cross sectional dimensions of signalling channel on the basis of leading, such as adopt the harmonic wave of the very high small size resonator cavity of higher mode frequency Suppressor, using the amplitude limiter of PIN diode, attenuator and switch, using the power synthesis network etc. of power amplifier.Root According to EM theory, signal transmits in the transmission line of little cross section, and a kind of is multi-conductor transmission lines, is the most normal with coaxial line See.Second is single conductor transmission line, is most common with ridge waveguide.The third is the axle in small size transmission line along transmission line To loading capacitance metallic object.Coaxial line structure needs using its inner wire of dielectric support, and power capacity is also low, processes simultaneously Difficult.This utility model belongs to two kinds of situations next.This utility model adopts increases metallic object A in described transmission line, with The mode changing the magnetic distribution in described transmission line improves described transmission line and multichannel described undersized transmission line Between coupling.
Several inclusion metal ridge or string capacitive character metallic object are arranged in the side in several signalling channels by this utility model Formula realizes high power ridge transmission line HIGH-POWERED MICROWAVES structure.Compared with the prior art, this utility model has compact conformation, weight Gently, material-saving and the simple advantage of structure.
Brief description
Fig. 1 is the cross-sectional view along Z-direction of the present utility model and embodiment 1 schematic diagram.
Fig. 2 is the cross-sectional view along Z-direction of embodiment 2.
Fig. 3 is the schematic top plan view of this utility model embodiment 2(Remove upper cover plate).
Fig. 4 is the schematic top plan view of this utility model embodiment 3(Remove upper cover plate)
Being numbered of in figure:1st, transmission line;2nd, metallic object A;3rd, signalling channel;4th, metal ridge;5th, metallic object B.
Specific embodiment
With reference to embodiment, this utility model is described in further detail.
Embodiment 1
As shown in figure 1, ridge transmission line HIGH-POWERED MICROWAVES structure, ridge transmission line HIGH-POWERED MICROWAVES structure, including being located at respectively Two sections of transmission lines 1 of the dead in line of input and outfan.
Described transmission line 1 is uniform transmission line;The shape of cross section of described uniform transmission line is not with the axis of this transmission line And change.
8 metallic object A2 on described every section of transmission line 1 outer surface;The axis direction of described metallic object A2 with described The axis of transmission line 1 is vertical;Described metallic object A2 is only connected with transmission line 1 outer surface being located in its one end.
Also include 8 signalling channels 3;The axis direction of described every signalling channel 3 and the axis direction of described transmission line 1 Parallel and connect two sections of transmission lines 1 positioned at input and outfan.
Except in addition at the transmission line 1 at its two ends, not having any other signal coupling logical between described signalling channel 3 Road.
In order to allow signal be transferred to another transmission line 1 by a transmission line 1 in very wide frequency range, also include position A metal ridge 4 within every signalling channel 3;Described metal ridge 4 is column structure, its axis direction and described transmission line 1 axis direction is parallel and is only connected with a side of the signalling channel 3 being located in one side.
Described metal ridge 4 is only connected with the inner bottom surface of the signalling channel 3 being located.
Described ridge transmission line HIGH-POWERED MICROWAVES structure is mirrored into symmetrically with respect to YZ plane.
Require described ridge transmission line HIGH-POWERED MICROWAVES structure to be mirrored into symmetrically with respect to XZ plane simultaneously.
All of transmission line 1 also includes inner wire 6;All of transmission line 1 is equilateral octagonal coaxial knot for outer conductor Structure.At this moment, the TEM ripple in the corresponding coaxial line of the fundamental mode operation pattern in transmission line 1.
The outer surface of the outer surface of all of signalling channel 3 and all of transmission line 1 all flushes.
For the bandwidth of operation of ridge transmission line HIGH-POWERED MICROWAVES structure described in further broadening, each described cylindrical metal Body A2 is correspondingly arranged at the near axis of described a certain signalling channel 3, any point on cylindrical metal body A axis with corresponding The axis of signalling channel 3 on the length of the line projection in the X direction of any point be less than the signalling channel 3 being located and exist The 1/3 of X-direction Breadth Maximum, at least two metallic object A2 on described every section of transmission line 1.
Embodiment 2
As shown in Figures 2 and 3
This embodiment is differed only in embodiment 1, and the shape of cross section of the outer conductor of all transmission lines 1 is square Shape.At this moment, the fundamental mode operation pattern of described transmission line 1 is TE10 pattern.
The number of described signalling channel 3 is 8.It is divided into two groups, be respectively disposed on two broadsides up and down of described transmission line On.Meanwhile, it is also classified into two groups, be arranged symmetrically on the right and left of described transmission line.Broadside is transmission line signal-oriented passage One side.
The near axis of every signalling channel 3, are provided with two metallic object A2 on described every section of transmission line 1.
Embodiment 3
As shown in Figures 2 and 3
This embodiment is differed only in embodiment 1, and ridge transmission line HIGH-POWERED MICROWAVES structure is filtered for harmonics restraint Ripple device.It is internally provided with 7 metallic object B5 positioned at every signalling channel 3;Described metallic object B5 only with the signalling channel 3 being located Inner bottom surface connects.
This utility model may be constructed various high-power microwave devices, and including harmonic supression filter, power combing is used Power splitter and combiner, waveguide switch circuit, waveguide attenuator etc..

Claims (9)

1. ridge transmission line HIGH-POWERED MICROWAVES structure is it is characterised in that include being located at two sections of transmission of input and outfan respectively Line(1), the axis of two sections of transmission lines overlaps;Also include running through described every section of transmission line(1)At least two columns on surface Metallic object A(2)Or only one end and transmission line(1)At least two cylindrical metal body A that outer surface connects(2)Or only one end with Transmission line(1)At least two cylindrical metal body A that inner bottom surface connects(2);Described metallic object A(2)Axis direction with described Transmission line(1)Axis direction vertical;Also include at least two signalling channels(3);Described every signalling channel(3)Axis side To with described transmission line(1)Axis direction parallel;Every signalling channel(3)Connection is located at two sections of biographies of input and outfan Defeated line(1);Each described cylindrical metal body A(2)It is correspondingly arranged at described a certain signalling channel(3)Near axis, column Any point on metallic object A axis and corresponding signalling channel(3)Axis on any point line in the X direction Projection length be less than be located signalling channel(3)In X-direction Breadth Maximum 1/3;Also include positioned at every signalling channel (3)At least one internal metal ridge(4);Described metal ridge(4)For column structure, its axis direction and described transmission line(1) Axis direction parallel and only one side be located signalling channel(3)Side connect.
2. ridge transmission line HIGH-POWERED MICROWAVES structure according to claim 1 is it is characterised in that described signalling channel(3)It Between except in the transmission line positioned at its two ends(1)Place is outer, does not have any other signal coupling channel.
3. ridge transmission line HIGH-POWERED MICROWAVES structure according to claim 1 is it is characterised in that described metal ridge(4)Only with The signalling channel being located(3)Outer surface connect.
4. ridge transmission line HIGH-POWERED MICROWAVES structure according to claim 1 is it is characterised in that described metal ridge(4)Only with The signalling channel being located(3)Inner bottom surface connect.
5. ridge transmission line HIGH-POWERED MICROWAVES structure according to claim 1 is it is characterised in that described signalling channel(3)'s Number is 8 or 12.
6. ridge transmission line HIGH-POWERED MICROWAVES structure according to claim 1 is it is characterised in that described ridge transmission line is high-power Microwave structure is mirrored into symmetrically with respect to YZ plane.
7. ridge transmission line HIGH-POWERED MICROWAVES structure according to claim 1 is it is characterised in that described ridge transmission line is high-power Microwave structure is mirrored into symmetrically with respect to XZ plane.
8. the ridge transmission line HIGH-POWERED MICROWAVES structure according to claim 1 any one is it is characterised in that described ridge transmits Line HIGH-POWERED MICROWAVES structure is divided into two sections along the center of Z axis;It is provided with other microwave devices between two sections;Described microwave device Including but not limited to PIN switching tube, PIN limiter diode, power amplifier etc..
9. the ridge transmission line HIGH-POWERED MICROWAVES structure according to claim 1 any one is it is characterised in that all of signal Passage(3)Outer surface and all of transmission line(1)Outer surface all flush.
CN201620965868.XU 2016-08-29 2016-08-29 High -power little wave structure of spine transmission line Active CN205944368U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201620965868.XU CN205944368U (en) 2016-08-29 2016-08-29 High -power little wave structure of spine transmission line

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201620965868.XU CN205944368U (en) 2016-08-29 2016-08-29 High -power little wave structure of spine transmission line

Publications (1)

Publication Number Publication Date
CN205944368U true CN205944368U (en) 2017-02-08

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Country Status (1)

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C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20220727

Address after: 610000 No. 88 Tianchen Road, Chengdu high tech Zone (West District), Sichuan

Patentee after: CHENGDU SAINAWEITE TECHNOLOGY CO.,LTD.

Address before: 610000 No. 88 Tianchen Road, Chengdu high tech Zone (West District), Sichuan

Patentee before: CHENGDU SAINA MICROWAVE TECHNOLOGY Co.,Ltd.