CN205919915U - Piezoelectric film sensor component - Google Patents
Piezoelectric film sensor component Download PDFInfo
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- CN205919915U CN205919915U CN201620944779.7U CN201620944779U CN205919915U CN 205919915 U CN205919915 U CN 205919915U CN 201620944779 U CN201620944779 U CN 201620944779U CN 205919915 U CN205919915 U CN 205919915U
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- film sensor
- piezoelectric film
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Abstract
The utility model provides a piezoelectric film sensor component, including at least one deck electrode layer, wire, conductive foil, conducting resin, the wire welding is on the conductive foil, the conductive foil passes through the conducting resin to be fixed on the electrode layer. Its advantage lies in guaranteeing piezoelectric film sensor component's dynamometry performance, can effectively solve the not firm problem of conduction again, the course of working is efficient, and simple process is suitable for industrial production in batches.
Description
Technical field
This utility model is related to a kind of piezoelectric film sensor element.
Background technology
Commercial production piezoelectric film sensor element out, needs metal terminal to conduct out by its signal of telecommunication at present,
Metal terminal is adopted with piezoelectric membrane electrode and contacts.But it is subject to larger or pressing repeatedly in piezoelectric film sensor element
During power, this way of contact is often not firm, easily produces the phenomenon of poor flow.
In prior art, patent cn 102044625a discloses a kind of electrode of piezoelectric film ultrasonic sensor, and this is special
Profit arranges piezoelectric membrane surface electrode by the way of plating and coating.But this electrode needs to make using two kinds of technique superpositions
With technique is more complicated.In addition, the thickness of electroplated electrode only has 400 angstroms to 1000 angstroms.Bear larger pressure in piezoelectric membrane
Easily produce the problem of electrode damage layer when power or pressure repeatedly, affect its using effect.
In addition, patent cn 20411485u discloses a kind of piezo-electric electret thin film element, upper/lower electrode is set by this patent
Put on the insulating layer, and screen layer is set on the insulating layer.But this patent anelectrode and ground electrode by insulating barrier parcel with
Interior, need to derive its signal of telecommunication by the way of riveting metal terminal.If piezoelectric membrane bears larger pressure or repeatedly
Pressure when, easily produce riveting portion and destroy, produce the problem of poor flow.
Prior art cannot solve to lead to the technical problem of signal of telecommunication poor flow all the time.
Utility model content
This utility model provides a kind of piezoelectric film sensor element, overcomes the defect of prior art, solves the above problems.
This utility model provide a kind of piezoelectric film sensor element, including at least one of which electrode layer, wire, conductive foil,
Conducting resinl；Wire welds on a conductive foil；Conductive foil is fixed on electrode layer by conducting resinl.
Further, this utility model provides a kind of piezoelectric film sensor element, can also have a feature in that and also wrap
Include piezoelectric membrane, dielectric layers, electrode layer is two-layer；One layer of electrode layer, a layer insulating, piezoelectric membrane, another layer of insulation
Layer, another layer of electrode layer stack gradually.
Further, this utility model provides a kind of piezoelectric film sensor element, can also have a feature in that and also wrap
Include piezoelectric membrane, insulating barrier, electrode layer is two-layer；One layer of electrode layer, insulating barrier, piezoelectric membrane, another layer of electrode layer layer successively
Folded.
Further, this utility model provides a kind of piezoelectric film sensor element, can also have a feature in that arbitrarily
The electrode layer edge of one layer or two-layer is less than insulating barrier.
Further, this utility model provides a kind of piezoelectric film sensor element, can also have a feature in that and also have
Matcoveredn, protective layer covers on electrode layer and conductive foil.
Further, this utility model provides a kind of piezoelectric film sensor element, can also have a feature in that electrode
Layer is monoblock type sensing unit electrode layer or multiple sensing unit electrode layer or multiple tandem sensing unit electrode layer.
Further, this utility model provides a kind of piezoelectric film sensor element, can also have a feature in that wire
Welded on a conductive foil by scolding tin.
Further, this utility model provides a kind of piezoelectric film sensor element, can also have a feature in that conduction
Paper tinsel is metallic conduction paper tinsel.
Further, this utility model provides a kind of piezoelectric film sensor element, can also have a feature in that piezoelectricity
The material of thin film is including but not limited to polypropylene film, polycarbonate membrane, polymethyl methacrylate, fluorinated ethylene propylene (FEP) copolymerization
Thing thin film, polytetrafluoroethylene film, polyvinylidene difluoride film, polyvinylidene fluoride trifluoro-ethylene.
A kind of piezoelectric film sensor element that this utility model provides, is a kind of new version and the signal of telecommunication is derived
Mode, that is, ensure the dynamometry performance of piezoelectric film sensor element, and effectively solving can conduct illusive problem；The course of processing
Efficiency high, process is simple, it is suitable for volume industrial and produce.
Brief description
Fig. 1 is the sectional view of piezoelectric film sensor element in embodiment one.
Fig. 2 is the top view of piezoelectric film sensor element in embodiment one.
Fig. 3 is the sectional view of piezoelectric film sensor element in embodiment two.
Fig. 4 is the top view of piezoelectric film sensor element in embodiment two.
Fig. 5 is the top view of piezoelectric film sensor element in embodiment three.
Specific embodiment
With specific embodiment, this utility model is further described below in conjunction with the accompanying drawings.
Embodiment one
Fig. 1 is the sectional view of piezoelectric film sensor element in embodiment one.
Fig. 2 is the top view of piezoelectric film sensor element in embodiment one.
As shown in figure 1, piezoelectric film sensor element, comprising: piezoelectric membrane 1, dielectric layers 2, two-layer electrode layer 31,
Conducting resinl 6, metallic conduction paper tinsel 7, scolding tin 8, wire 9, two-layer protective layer 4.One layer of electrode layer 31, a layer insulating 2, piezoelectric membrane
1st, another layer insulating 2, another layer of electrode layer 31 stack gradually.The material of piezoelectric membrane 1 including but not limited to polypropylene film,
Polycarbonate membrane, polymethyl methacrylate, FEP fluorinated ethylene propylene copolymer thin film, polytetrafluoroethylene film, Kynoar
Thin film, polyvinylidene fluoride trifluoro-ethylene.The material of insulating barrier 2 comprises but does not limit pet film, gathers
Vinyl chloride film, polyethylene film, Kapton, polycarbonate film, polypropylene film.
As shown in Fig. 2 the electrode layer 31 in the present embodiment is monoblock type sensing unit electrode layer.Wherein one layer electrode layer 31
Electrode layer edge be less than insulating barrier 2, it is to avoid two-layer electrode layer 31 perpendicular end surface turn on.The material of electrode layer 31 comprise but not
The conductive materials such as limit aluminum, copper, silver, carbon.
Wire 9 is welded on metallic conduction paper tinsel 7 by scolding tin 8；It is solid that the metallic conduction paper tinsel 7 of welding lead 9 passes through conducting resinl 6
It is scheduled on electrode layer 31, and so that metallic conduction paper tinsel 7 is turned on electrode layer 31.
After metallic conduction paper tinsel 7 is fixed on electrode layer 31,4 layers of protective layer covers on electrode layer 31 and metallic conduction paper tinsel 7, right
Electrode layer is protected.The material of protective layer 4 comprises but does not limit polyurethane, polyethylene terephthalate, polrvinyl chloride, gathers
Ethylene, polyimides, Merlon, ethylene-vinyl acetate copolymer, polystyrene, polypropylene, polyethylene, polyurethane
Ester.
Embodiment two
Fig. 3 is the sectional view of piezoelectric film sensor element in embodiment two.
Fig. 4 is the top view of piezoelectric film sensor element in embodiment two.
As shown in figure 3, piezoelectric film sensor element, comprising: piezoelectric membrane 1, insulating barrier 2, two-layer electrode layer 32, conduction
Glue 6, metallic conduction paper tinsel 7, scolding tin 8, wire 9, two-layer protective layer 4.One layer of electrode layer 32, insulating barrier 2, piezoelectric membrane 1, another layer
Electrode layer 32 stacks gradually.
As shown in figure 4, the electrode layer 32 in the present embodiment is multiple tandem sensing unit electrode layers, there are 3 sensings
Unit 32-1 and 2 two sensing unit connecting portion 32-2.3 sensing unit 32-1 are connected by two sensing unit connecting portion 32-2
Together, form electrode layer 32.The electrode layer edge of wherein one layer of electrode layer 32 is less than insulating barrier 2, it is to avoid two-layer electrode layer 32
In perpendicular end surface conducting.
Wire 9 is welded on metallic conduction paper tinsel 7 by scolding tin 8；It is solid that the metallic conduction paper tinsel 7 of welding lead 9 passes through conducting resinl 6
It is scheduled on electrode layer 32, and so that metallic conduction paper tinsel 7 is turned on electrode layer 32.
After metallic conduction paper tinsel 7 is fixed on electrode layer 32,4 layers of protective layer covers on electrode layer 31 and metallic conduction paper tinsel 7, right
Electrode layer is protected.
Embodiment three
Fig. 5 is the top view of piezoelectric film sensor element in embodiment three.
As shown in figure 5, the piezoelectric film sensor element in the present embodiment, in addition to the structure of electrode layer 33, other
The structure of part is identical with embodiment two, not in repeated description.
In the present embodiment, electrode layer 33 is multiple sensing unit electrode layers, has 3 single sensing unit 33-1.Often
Individual sensing unit 33-1 all can pass through conducting resinl, metallic conduction paper tinsel, is finally connected with wire.
Claims (9)
1. a kind of piezoelectric film sensor element it is characterised in that: include at least one of which electrode layer, wire, conductive foil, conduction
Glue；
Wherein, described wire is welded on described conductive foil；Described conductive foil is fixed on described electrode layer by described conducting resinl
On.
2. piezoelectric film sensor element according to claim 1 it is characterised in that: also include piezoelectric membrane, two-layer exhausted
Edge layer, described electrode layer is two-layer；One layer of described electrode layer, one layer of described insulating barrier, described piezoelectric membrane, another layer are described absolutely
Edge layer, the described electrode layer of another layer stack gradually.
3. piezoelectric film sensor element according to claim 1 it is characterised in that: also include piezoelectric membrane, insulating barrier,
Described electrode layer is two-layer；One layer of described electrode layer, described insulating barrier, described piezoelectric membrane, the described electrode layer of another layer are successively
Stacking.
4. the piezoelectric film sensor element according to any one in Claims 2 or 3 it is characterised in that: any one layer
Or the described electrode layer edge of two-layer is less than described insulating barrier.
5. piezoelectric film sensor element as claimed in any of claims 1 to 3 it is characterised in that: also there is guarantor
Sheath, described protective layer covers on described electrode layer and described conductive foil.
6. piezoelectric film sensor element as claimed in any of claims 1 to 3 it is characterised in that: described electrode
Layer is monoblock type sensing unit electrode layer or multiple sensing unit electrode layer or multiple tandem sensing unit electrode layer.
7. piezoelectric film sensor element as claimed in any of claims 1 to 3 it is characterised in that: described wire
It is welded on described conductive foil by scolding tin.
8. piezoelectric film sensor element as claimed in any of claims 1 to 3 it is characterised in that: described conduction
Paper tinsel is metallic conduction paper tinsel.
9. piezoelectric film sensor element as claimed in any of claims 1 to 3 it is characterised in that: described piezoelectricity
The material of thin film is including but not limited to zinc oxide nanowire film, polypropylene film, polycarbonate membrane, poly-methyl methacrylate
Ester, FEP fluorinated ethylene propylene copolymer thin film, polytetrafluoroethylene film, polyvinylidene difluoride film, polyvinylidene fluoride trifluoro-ethylene.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620944779.7U CN205919915U (en) | 2016-08-25 | 2016-08-25 | Piezoelectric film sensor component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620944779.7U CN205919915U (en) | 2016-08-25 | 2016-08-25 | Piezoelectric film sensor component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205919915U true CN205919915U (en) | 2017-02-01 |
Family
ID=57868653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620944779.7U Active CN205919915U (en) | 2016-08-25 | 2016-08-25 | Piezoelectric film sensor component |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205919915U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110158164A (en) * | 2019-05-23 | 2019-08-23 | 天津工业大学 | Polyacrylonitrile nanofiber film and preparation method thereof, flexible piezoelectric nano generator and preparation method thereof |
| CN113081815A (en) * | 2021-03-29 | 2021-07-09 | 北京化工大学 | Fingerstall based on array type PVDF touch sensor and preparation method |
| WO2022246821A1 (en) * | 2021-05-28 | 2022-12-01 | 京东方科技集团股份有限公司 | Piezoelectric sensor, fabrication method therefor, and haptic feedback device |
-
2016
- 2016-08-25 CN CN201620944779.7U patent/CN205919915U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110158164A (en) * | 2019-05-23 | 2019-08-23 | 天津工业大学 | Polyacrylonitrile nanofiber film and preparation method thereof, flexible piezoelectric nano generator and preparation method thereof |
| CN113081815A (en) * | 2021-03-29 | 2021-07-09 | 北京化工大学 | Fingerstall based on array type PVDF touch sensor and preparation method |
| CN113081815B (en) * | 2021-03-29 | 2022-01-28 | 北京化工大学 | Fingerstall based on array type PVDF touch sensor and preparation method |
| WO2022246821A1 (en) * | 2021-05-28 | 2022-12-01 | 京东方科技集团股份有限公司 | Piezoelectric sensor, fabrication method therefor, and haptic feedback device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: Room 313, Building 4, 45 Songbei Road, Suzhou Industrial Park, Suzhou City, Jiangsu Province Patentee after: Suzhou Beibei New Material Technology Co., Ltd. Address before: 200000, No. 1599, No. 2-1, Pu Pu Avenue, Shanghai, Fengxian District Patentee before: New material technology (Shanghai) Co., Ltd. |
|
| CP03 | Change of name, title or address |