CN205912367U - Circuit board drilling dry process metallization equipment - Google Patents

Circuit board drilling dry process metallization equipment Download PDF

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Publication number
CN205912367U
CN205912367U CN201620817013.2U CN201620817013U CN205912367U CN 205912367 U CN205912367 U CN 205912367U CN 201620817013 U CN201620817013 U CN 201620817013U CN 205912367 U CN205912367 U CN 205912367U
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CN
China
Prior art keywords
plated film
vacuum chamber
vacuum
circuit board
dry method
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Active
Application number
CN201620817013.2U
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Chinese (zh)
Inventor
龚光福
方健灵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hefei Kaitai Electromechanical Technology Co Ltd
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Hefei Kaitai Electromechanical Technology Co Ltd
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Priority to CN201620817013.2U priority Critical patent/CN205912367U/en
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Publication of CN205912367U publication Critical patent/CN205912367U/en
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Abstract

The utility model discloses a filming equipment of circuit board drilling dry process metallization, equipment include that the aluminum target array is plated to the real empty room of coating film, feeding pre -vacuum chamber, ejection of compact pre -vacuum chamber, pay -off frame, play work or material rest, material transfer device, two -sided symmetrical copper facing target array, two -sided symmetry, the reverse biased sculpture is distinguished, magnetron sputtering coating film district, radio frequency plasma cleaning, nitrogen gas cooling. The utility model discloses can bore hole metallization batch production by the circuit board, can realize the board and favor the pore wall metallization that the aperture ratio is less than 8, can realize the good combination of coating film and base member.

Description

Circuit boring dry method metallization machines
Technical field
This utility model is related to circuit board manufacturing process field, and specifically one kind can meet circuit boring dry method metal The production equipment that metallization processes require.
Background technology
Circuit board can form industrialization, large-scale production, and topmost contribution is due to releasing in the sixties in 20th century Patent formulation about electroless copper and colloid palladium patent formulation, by circuit board through-hole adopt electroless copper be its industrialization, Large-scale production and automated production are laid a good foundation.It also becomes the circuit board making being accepted by each manufacturing enterprise One of fundamental technology.Board production fundamental technology is as follows:
It is complete that weak corrosion one activation one electroless copper one of process one is leveled on copper coated foil plate blanking one boring one deburring one surface The plate copper facing one etching plating patterns imaging tin plating lead of one pattern plating copper one or nickel gold one stripping resist one etch a hot melt one Apply solder mask
Must there is chemical-copper-plating process, electroless copper is the basic work during circuit board making during circuit board making Skill and important step.It is reducing agent that electroless copper typically adopts formaldehyde, by cu2+Be reduced into metallic copper be deposited on circuit board surface and Drill hole inner wall, forms continuous copper film, reaches the purpose of conducting.
cu2++2hcho+4oh-→cu+2hcoo-+2h2o+h2
In order that the metallic copper tissue of deposition is fine and smooth and chemical plating solution is stablized it is necessary to control the cu in solution2+Concentration, because Need in this chemical plating fluid to add strong chelating agent, generally edta, the material such as this chelating agent and formaldehyde can bring harm to environment, There are very big difficulty, the particularly wastewater treatment containing edta chelating agent in wastewater treatment, current process all can not Accomplish thoroughly.In addition, the maintenance and management of electroless copper tank liquor also has certain difficulty.But replace technique currently without reliable, Electroless copper remains the critical process in circuit board making.
Dry method method for metallising, is dry method for the wet method method for metallising with chemical plating as critical process Method for metallising is to pass through magnetron sputtering under vacuum conditions, in circuit board surface and drill hole inner wall, forms continuous copper film, reaches Purpose to conducting.Although magnetron sputtering apparatus are varied, it is applied to the metallized equipment of high-volume circuit boring and exists Also do not occur on market.
Utility model content the purpose of this utility model is to provide a kind of circuit boring dry method metallization machines, meets Circuit boring dry method metallization process requires.
In order to achieve the above object, the technical scheme that this utility model is adopted is:
Circuit boring dry method metallization machines it is characterised in that: include plated film vacuum chamber, the left and right end of plated film vacuum chamber Respectively preevacuated chamber, the wherein preevacuated chamber of left end are connected as charging pre-vacuum chamber by high vacuum valve, the pre- of right-hand member is taken out Vacuum chamber is as discharging pre-vacuum chamber;Plated film vacuum interior left end is realized by high threshold switch and is fed the material biography between pre-vacuum chamber Pass, plated film vacuum interior right-hand member realizes the material transmission and discharging pre-vacuum chamber between by high threshold switch;Plated film vacuum interior sets There are connection cradle, the material conveying device of discharge rack;Plated film vacuum interior is sequentially provided with etched area, plated film area from left to right; Etched area adopts reverse biased plasma etching industrial, and double-sided symmetrical etches;Plated film divides into copper plated area and area of aluminizing, and all adopts With magnetron sputtering technique, double-sided symmetrical channel-type plated film.
Described circuit boring dry method metallization machines it is characterised in that: charging pre-vacuum chamber in be provided with radio frequency plasma Cleaning device, discharging pre-vacuum chamber is provided with nitrogen cooling tube and is connected with outside source nitrogen.
Described circuit boring dry method metallization machines it is characterised in that: employ before plated film reverse biased etc. from Son etching, etching and plated film are continuously finished.
Described circuit boring dry method metallization machines it is characterised in that: etching and plated film using double-sided symmetrical parallel Target channel pattern.
This utility model advantage is:
1. the metallization batch production of circuit boring dry method can be realized.
2. the via hole that aspect ratio is less than 8 can be realized.
3. the good combination of plated film and matrix can be realized.
Brief description
Fig. 1 is this utility model unit construction principle figure.
Specific embodiment
As shown in figure 1, circuit board dry method metallization machines, including plated film vacuum chamber 1, feed pre-vacuum chamber 2, discharging pre-vacuum chamber 3, material conveying device 4, reverse biased plasma etching area 5, plated film area 6, copper target array 7, aluminum target array 8, high threshold switch 9, Cradle and receiving rack 10, charging aperture 11, discharging opening 12.
It is provided with radio frequency plasma cleaning plant in charging pre-vacuum chamber 2.
Discharging pre-vacuum chamber 3 is connected with outside source nitrogen also by cooling tube.
The left and right end of plated film vacuum chamber 1 connects preevacuated chamber, the wherein preevacuated chamber of left end by high vacuum valve respectively As charging pre-vacuum chamber 2, the preevacuated chamber of right-hand member is as discharging pre-vacuum chamber 3;In plated film vacuum chamber 1, left end passes through high threshold switch 9 realize the material transmission and charging pre-vacuum chamber 3 between, and in plated film vacuum chamber 1, right-hand member is realized taking out in advance with discharging by high threshold switch 9 Material transmission between room 3;It is provided with the material conveying device connecting cradle and receiving rack 10 in plated film vacuum chamber 1;Plated film is true It is sequentially provided with etched area 5, plated film area 6 from left to right in empty room 1;Etched area 5 adopts reverse biased plasma etching industrial, two-sided Symmetrical etching;Plated film area 6 is divided into copper plated area and area of aluminizing, and is all to adopt magnetron sputtering technique, double-sided symmetrical channel-type plated film.
It is provided with radio frequency plasma cleaning device in charging pre-vacuum chamber 2.Discharging pre-vacuum chamber 3 is provided with nitrogen cooling tube and outside nitrogen Source of the gas is connected.
Reverse biased plasma etching is employed, etching and plated film are continuously finished before plated film.
Etching adopts double-sided symmetrical parallel target channel pattern with plated film.

Claims (4)

1. circuit boring dry method metallization machines it is characterised in that: include plated film vacuum chamber, the left and right end of plated film vacuum chamber is divided Preevacuated chamber, the wherein preevacuated chamber of left end are not connected as charging pre-vacuum chamber by high vacuum valve, the pre- of right-hand member is taken out very Empty room is as discharging pre-vacuum chamber;Plated film vacuum interior left end is realized by high threshold switch and is fed the material biography between pre-vacuum chamber Pass, plated film vacuum interior right-hand member realizes the material transmission and discharging pre-vacuum chamber between by high threshold switch;Plated film vacuum interior sets There are connection cradle, the material conveying device of discharge rack;Plated film vacuum interior is sequentially provided with etched area, plated film area from left to right; Etched area adopts reverse biased plasma etching industrial, and double-sided symmetrical etches;Plated film divides into copper plated area and area of aluminizing, and all adopts With magnetron sputtering technique, double-sided symmetrical channel-type plated film.
2. circuit boring dry method metallization machines according to claim 1 it is characterised in that: charging pre-vacuum chamber in be provided with Radio frequency plasma cleaning device, discharging pre-vacuum chamber is provided with nitrogen cooling tube and is connected with outside source nitrogen.
3. circuit boring dry method metallization machines according to claim 1 it is characterised in that: employ anti-before plated film To bias plasma etching, etching and plated film are continuously finished.
4. circuit boring dry method metallization machines according to claim 1 it is characterised in that: etching and plated film are using double Face symmetrical parallel target channel pattern.
CN201620817013.2U 2016-07-29 2016-07-29 Circuit board drilling dry process metallization equipment Active CN205912367U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201620817013.2U CN205912367U (en) 2016-07-29 2016-07-29 Circuit board drilling dry process metallization equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201620817013.2U CN205912367U (en) 2016-07-29 2016-07-29 Circuit board drilling dry process metallization equipment

Publications (1)

Publication Number Publication Date
CN205912367U true CN205912367U (en) 2017-01-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201620817013.2U Active CN205912367U (en) 2016-07-29 2016-07-29 Circuit board drilling dry process metallization equipment

Country Status (1)

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CN (1) CN205912367U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109461672A (en) * 2018-09-29 2019-03-12 蚌埠市龙子湖区金力传感器厂 A kind of uniform sensor monocrystalline silicon etching device of etching
CN115261778A (en) * 2022-06-23 2022-11-01 胜宏科技(惠州)股份有限公司 Magnetron sputtering assisted copper deposition method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109461672A (en) * 2018-09-29 2019-03-12 蚌埠市龙子湖区金力传感器厂 A kind of uniform sensor monocrystalline silicon etching device of etching
CN115261778A (en) * 2022-06-23 2022-11-01 胜宏科技(惠州)股份有限公司 Magnetron sputtering assisted copper deposition method

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of utility model: Circuit board drilling dry process metallization equipment

Effective date of registration: 20171213

Granted publication date: 20170125

Pledgee: Feixi Anhui rural commercial bank Limited by Share Ltd

Pledgor: Hefei Kaitai Electromechanical Technology Co., Ltd.

Registration number: 2017340000413

PE01 Entry into force of the registration of the contract for pledge of patent right
PC01 Cancellation of the registration of the contract for pledge of patent right

Date of cancellation: 20190416

Granted publication date: 20170125

Pledgee: Feixi Anhui rural commercial bank Limited by Share Ltd

Pledgor: Hefei Kaitai Electromechanical Technology Co., Ltd.

Registration number: 2017340000413

PC01 Cancellation of the registration of the contract for pledge of patent right