CN205901698U - RFMEMS wave filter - Google Patents
RFMEMS wave filter Download PDFInfo
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- CN205901698U CN205901698U CN201620626816.XU CN201620626816U CN205901698U CN 205901698 U CN205901698 U CN 205901698U CN 201620626816 U CN201620626816 U CN 201620626816U CN 205901698 U CN205901698 U CN 205901698U
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- 239000000758 substrate Substances 0.000 claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- 230000008859 change Effects 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 19
- 235000012239 silicon dioxide Nutrition 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052741 iridium Inorganic materials 0.000 claims description 6
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- UPIXZLGONUBZLK-UHFFFAOYSA-N platinum Chemical compound [Pt].[Pt] UPIXZLGONUBZLK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 238000004873 anchoring Methods 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 238000005728 strengthening Methods 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims 2
- 230000005611 electricity Effects 0.000 claims 1
- 238000013461 design Methods 0.000 abstract description 11
- 238000001914 filtration Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 45
- 238000000034 method Methods 0.000 description 17
- 238000005516 engineering process Methods 0.000 description 12
- 238000012545 processing Methods 0.000 description 7
- 230000035882 stress Effects 0.000 description 7
- 239000012528 membrane Substances 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000009514 concussion Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002365 multiple layer Substances 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The utility model relates to a RFMEMS wave filter, include: the silicon substrate, the anchor is in unsettled arm on the silicon substrate, be used for with the silicon substrate forms unsettled sound wave chamber jointly, realizes FBAR filtering, the setting is in being used for on the silicon substrate drives unsettled arm inclination angle's driver is through the drive unsettled arm inclination angle makes the cavity in unsettled sound wave chamber changes to adjustment FBAR resonant frequency. The utility model discloses unsettled arm of utilizing level multilayer and unsettled sound wave structure have solved and have perplexed the substrate loss problem in MEMS FBAR field and the realization technological problem of cavity design. And can obtain the change of body cavity through the control at different angles of inclination to change resonant frequency.
Description
Technical field
This utility model is related to a kind of wireless communication RF front-end devices, particularly a kind of rf mems wave filter.
Background technology
Large-scale operator of various countries all must support at least three to four communication standards at present, such as 2g, wcdma, lte etc..
The exponential growth of mobile data services requires follow-on wireless communication platform can select different with the change of channel environment
Frequency range carries out the transmitting-receiving of signal, to reach optimal communication quality and handling capacity.For taking into account compact outward appearance and lte multifrequency
The design requirement of multimode, mobile device brand business is to radio-frequency front-end module design pay attention to day by day.Industry changes frequency range now
Method is mainly the stacking of electric capacity, and utilizes active switching devices, and also ratio is more prominent for adjoint problem therewith, and for example area is big,
Power consumption is high, poor performance, than more serious the problems such as noise weight.
Industry generally believes that the development of coming years wireless communication technology is around lte-a and 4.5g technology, and earliest
In the year two thousand twenty, the epoch of 5g technology will be welcome, mobile band is up to surprising 6ghz～60ghz, in such high frequency, such as
On the frequency band in this broadband, in existing technology, most possibly adopted filtering device is exactly baw device, makes in existing laboratory
Fbar (a kind of baw filter) wave filter made can realize high performance filtering in the frequency band of more than 20ghz.Need
Run on multiple different frequency ranges and area, support that the mobile phone of high speed lte voice-and-data transmission currently accelerates using fbar skill
Art solves difficult filtering problem, and the mobile phone with 4g/lte function would generally be in the new distribution frequency of next-door neighbour's existing radio service
Spectrum running, therefore often faces possible interference between service.Precipitous filter curve based on fbar technology wave filter and outstanding
Out-of-band rejection ability operates moreover it is possible to avoid impact even interrupting in crowded frequency spectrum except helping modern smart mobile phone
The interference of data transfer.In addition, the low loss characteristic of fbar wave filter can compensate in the integrated multiple frequency ranges in less radio-frequency front end
Higher losses, improve signal reception and battery life.
The most basic structure of baw filter is that two metal electrodes clip piezoelectric membrane (quartz substrate exists
Under 2ghz, thickness is 2um), sound wave shakes formation standing wave (standing wave) in piezoelectric membrane.
In order to sound wave is stayed concussion in piezoelectric membrane, between concussion structure and external environment condition, must there are enough isolation
Minimum loss and maximum q value just can be obtained.Sound wave spread speed in solid is～5000m/s is that is to say, that the sound wave of solid
Impedance is about 105 times of air, so 99.995% acoustic wave energy can reflect at solid and air boundary, with former
The ripple (incident wave) coming forms standing wave together.And shake the another side of structure, the sound impedance of piezoelectric and other
The difference of substrate (such as si) is little, so can not be direct for piezoelectric layer deposit (deposition) on si substrate.
There is a kind of method to be earthquake structure bragg formed below reflector, sound wave is reflexed to inside piezoelectric layer.
Reflector replaces impedance layer by several layers height and forms, and the sound impedance of such as ground floor is big, the sound impedance of the second layer
Little, third layer sound impedance is big, and every layer of thickness is λ/4 of sound wave, so most of ripple can reflect with original
Ripple is superimposed.This structure whole structure is equivalent to and air contact, and most of sound wave is reflected back, and this structure is referred to as baw-
smr(solidly mounted resonator).
At present, fbar filter is usually used two battery lead plates arranged vertically and realizes, and centre utilizes piezoelectric membrane material
Material, forms the cavity of bottom using sacrifice layer.Operation principle mainly uses the piezoelectric property of piezoelectric with " inverse piezoelectricity is special
Property ", when voltage is applied on electrode, because piezoelectric effect makes the mechanical deformation that piezoelectric produces go out in thin film underexcitation
Bulk acoustic wave between two electrodes roundtrip, form mechanical resonant, its resonant frequency wavelength is 2 times of piezoelectric membrane thickness.
The structure of currently a popular main flow fbar mainly has three kinds of structures, reverse side etching, air cavity type and solid-state assembling
Type.Reverse side etching type is low due to mechanical aging fastness, unlikely realizes commercialization, and solid-state assembly type machinable durability is strong,
Integration is good, but alignment is relatively difficult, causes loss ratio larger, q value ratio is relatively low, in addition also more complicated in technique, does not have
It is widely used.And air type structure can be realized using particular semiconductor processing technique or sacrificial layer technology,
This structure not only can obtain higher q value, and has reasonable machinable durability, but the preparation technology of air chamber for
Improve q value and final performance is all very crucial, the acquisition of the lateral dimension of air chamber, shape and stereochemical structure is all in technique
Difficult point, the material of supporting layer to be considered, the removal of sacrifice layer, the impact to resonance structure, STRESS VARIATION etc. that cavity is realized
Aspect.The realization of air chamber needs more complicated preparation process, due to the limitation of the design of through hole and the means of etching, body cavity
Quality cannot ensure.
At present, taking avago company of the U.S. as a example, it is the manufacturer making fbar in the world earliest, mainly cavity type
Fbar structure, its processing technology is considerably complicated, mentions in its patent (us6060818, us6377137, us20050088257a1)
Need through multistep etching is carried out on silicon chip, using sacrifice layer filling, surface covers electrode and piezoelectric layer, and finally release is sacrificed
The technique of layer, the Railway Project existing is: the etching degree of sacrifice layer can cause the adhesion phenomenon of cavity, the one-tenth of impact product
Product rate；Because the presence of stress can cause the stripping of thin layer and the reduction of performance；In addition technical process is all to customize, and improves
Overall cost.
Content of the invention
Form release difficulty in cavity scheme in order to overcome in above-mentioned existing process technology with sacrifice layer, stress concentration etc. is asked
Topic, this utility model has the rf mems wave filter of cantilever design.Due to achieving the effect of cavity with cantilever design, thus
Solve above-mentioned technical problem.
A kind of rf mems wave filter that this utility model provides includes:
Silicon substrate；
It is anchored at the hanging arm on described silicon substrate, for being collectively forming hanging acoustic wave cavity with described silicon substrate, realize
Fbar filters；
It is arranged on the driver for driving described hanging arm angle change on described silicon substrate, by driving institute
Stating hanging arm angle change, so that the cavity of described hanging acoustic wave cavity is changed, thus adjusting fbar resonant frequency；
Wherein, described rf mems is radio frequency micro-mechanic system, and described fbar is FBAR.
Preferably, described hanging arm includes the anchorage part anchoring on a silicon substrate and is used for described silicon substrate common shape
Become the overhanging portion of hanging acoustic wave cavity.
Preferably, the overhanging portion of described hanging arm and anchorage part are multiple structure, comprising:
It is located at middle piezoelectric material layer；
Top electrode on described piezoelectric material layer；And
Hearth electrode under described piezoelectric material layer.
Preferably, described driver is the polysilicon layer for heating being fixed on described silicon substrate by deposition, its
Connecting described hearth electrode, heating described top electrode and hearth electrode change electrode stress by direct or indirect, thus driving described
Hanging arm angle change.
Preferably, the overhanging portion of described hanging arm and anchorage part also include being attached to the silicon dioxide outside hearth electrode
Protective layer.
Preferably, described hearth electrode includes: connects the first hearth electrode of described piezoelectric material layer；It is connected to described first bottom
The second hearth electrode between electrode and silicon dioxide layer of protection.
Preferably, described driver is the polysilicon layer for heating being fixed on described silicon substrate by deposition, its
Connect described silicon dioxide layer of protection.
Preferably, the material of described top electrode is one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminum or combination.
Preferably, the material of described first hearth electrode is one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminum or combination.
Preferably, described second hearth electrode is the titanium layer for strengthening hearth electrode, is attached with described silicon dioxide thereon and protects
Sheath.
Advantageous Effects of the present utility model are, the hanging arm of use level multilamellar, and hanging sound wave structure solve tired
That disturbs the substrate loss problem in mems fbar field and cavity design realizes technological problemses.And can be tilted by difference
The control at angle, obtains the change of body cavity, thus changing resonant frequency.Because this utility model utilizes multilamellar hanging arm thermal deformation
Feature, drive mechanism has very high output power (o (1mn)) under relatively low driving voltage, more traditional identical of this point
The electrostatic drive system of size has very big advantage, and usual electrostatic drive system only has o (1 μ n) under driving voltage 100v.
Hot transmission system is compatible with existing cmos technique simultaneously.This device tool has been widely used, and such as voltage controls resonator,
Radio-frequency filter etc., completely cmos processing compatibility, can pass through following process, overall price is low.
Below in conjunction with the accompanying drawings structure of the present utility model is described in detail.
Brief description
Fig. 1 is the structural representation of rf mems wave filter of the present utility model；
Fig. 2 is a partial sectional schematic view in Fig. 1；
Fig. 3 is the schematic diagram of the hearth electrode of hanging arm of the present utility model；
Fig. 4 is b partial sectional schematic view in Fig. 1.
Specific embodiment
Fig. 1 shows a kind of rf mems wave filter of the present utility model, as shown in figure 1, comprising: silicon substrate 1；Anchoring
Hanging arm 2 on described silicon substrate, for being collectively forming hanging acoustic wave cavity with described silicon substrate, realizes fbar filtering；Setting
The driver 3 for driving described hanging arm 2 angle change on described silicon substrate 1, by driving described hanging arm
Angle change, makes the cavity of described hanging acoustic wave cavity change, thus adjusting fbar resonant frequency；Described rf mems is to penetrate
Frequency micro mechanical system, described fbar is FBAR.
As shown in figure 1, hanging arm includes the anchorage part being anchored on silicon substrate 1 and for being collectively forming with silicon substrate 1
The overhanging portion of hanging acoustic wave cavity.
Fig. 2 and Fig. 4 shows the overhanging portion of hanging arm of the present utility model and the structure of anchorage part, and both are many
Rotating fields, all include: positioned at middle piezoelectric material layer 22；Top electrode 21 on described piezoelectric material layer；And position
Hearth electrode 23 under described piezoelectric material layer.
As shown in figure 1, driver 3 is the polysilicon layer for heating being fixed on silicon substrate 1 by deposition, its connection
Described hearth electrode, heats described top electrode and hearth electrode change electrode stress by direct or indirect, thus driving described hanging
Arm angle change.
In order to silicon substrate is formed with protection, the overhanging portion of hanging arm and anchorage part also include being attached to outside hearth electrode
Silicon dioxide layer of protection 24.
Fig. 3 shows the structure of hearth electrode 23, comprising: connecting the first hearth electrode 231 of described piezoelectric material layer；And
It is connected to the second hearth electrode 232 between described first hearth electrode and silicon dioxide layer of protection.
The material of top electrode 21 of the present utility model can be one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminum or group
Close.The material of this utility model the first hearth electrode 232 can also be one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminum or group
Close.Second hearth electrode 232 of the present utility model is the titanium layer for strengthening hearth electrode, is attached with silicon dioxide layer of protection thereon
24.
In the case that hanging arm includes silicon dioxide layer of protection 24, this utility model is fixed on described silicon lining by deposition
The polysilicon layer for heating on bottom connects described silicon dioxide layer of protection.
This utility model is new complementary metal-oxide semiconductor (cmos) technique
Compatible rf mems wave filter, its design solves the problems, such as that long-standing problem the substrate loss in mems fbar field and cavity sets
That counts realizes technological problemses.Using the technique compatible with cmos, can be produced in batches under existing wafer formation condition,
Permissible.Due to its simple multiple-layer horizontal bar design, system possesses extremely strong resisting fatigue feature.Heat activated realization is by micro
Polysilicon heater.
Additionally, the change of body cavity is changed by hot activation, thus this utility model can also form different qualities
Device, including radio-frequency devices, antenna tuner, variable frequency filter, resonator, power amplifier etc., by the control of different inclination angle,
Obtain the adjustment of flexible resonant frequency.In addition the loss to sound wave can be reduced to minimum.
This utility model passes through the hanging arm design of multiple-layer horizontal rod-type, makes system possess extremely strong resisting fatigue feature.By
Utilize the feature of multilamellar bar thermal deformation in it, drive mechanism has very high output power (o under relatively low driving voltage
(1mn)) the electrostatic drive system of the more traditional formed objects of this point has very big advantage, and usual electrostatic drive system exists
Driving voltage 100v only has o (1 μ n) driving force.
This utility model can be manufactured by following processing step:
Define micro structure by the use of the metal level of cmos as the corrosion cover of top layer.
Traditional cmos technique, subsequently with one group of processing step corrosion processing being not required in addition scribe mask.
Cmos silicon oxide, silicon nitride, aluminum corrosion becomes layer structure.
1. in ready silicon chip upper table facet etch one groove (air-gap), then redeposited one layer thin sio2 buffering
Layer, for protecting silicon substrate.
2. deposited oxide layer, such as sio2, or nitration case sinx.
3. precipitate electrothermal layer, polysilicon.
4. deposit bottom electrode, be photo-etched into required figure, then deposit the piezoelectricity of high c-axis orientation with reactive radio frequency magnetron sputtering
Thin film aln or zno.
5. use rie lithographic technique to etch piezoelectric membrane, form the through hole that hearth electrode is drawn.
6. deposit Top electrode, be lithographically formed required figure.
7. erosion removal silicon substrate, discharges structure, forms single-ended hanging structure.
The feature realized is to define micro structure by the use of the metal level of cmos as the corrosion cover of top layer.Due to stress,
Device can be reduced, by Spontaneous release, the infringement that stress brings simultaneously.Production process and the course of processing that this device uses
It is cmos technique the most general, there is low-power consumption, high-performance, highly integrated ability.Cmos-mems technology makes mems device and mould
Intend, digital circuit can be gathered in a chip.Unlike other mems techniques, cmos-mems technology utilization tradition cmos
Technique goes deposited metal and silicon oxide to go to form desired structure, the high output ratio of the compatible logistics of cmos, and at a low price
Lattice.It is desirably integrated in other radio frequency original papers, such as wave filter, power amplifier, match circuit network, antenna etc..
This utility model is by using the hanging arm of horizontal multilamellar, and hanging sound wave structure solves and annoyings mems fbar
The substrate loss problem in field and cavity design realize technological problemses.And can be obtained by the control of different inclination angle
The change of body cavity.Because this utility model utilizes multilamellar hanging arm thermal deformation, drive mechanism is in relatively low driving voltage
Under there is very high output power (o (1mn)), thus this utility model has very big advantage with respect to prior art.
Although being described in detail to this utility model above, this utility model not limited to this, the art
Technical staff can carry out various modifications according to principle of the present utility model.Therefore, all made according to this utility model principle
Modification, all should be understood to fall into protection domain of the present utility model.
Claims (10)
1. a kind of rf mems wave filter is it is characterised in that include:
Silicon substrate；
It is anchored at the hanging arm on described silicon substrate, for being collectively forming hanging acoustic wave cavity with described silicon substrate, realize fbar filter
Ripple；
It is arranged on the driver for driving described hanging arm angle change on described silicon substrate, described outstanding by driving
Empty arm angle change, makes the cavity of described hanging acoustic wave cavity change, thus adjusting fbar resonant frequency；
Wherein, described rf mems is radio frequency micro-mechanic system, and described fbar is FBAR.
2. rf mems wave filter according to claim 1 is it is characterised in that described hanging arm includes being anchored at silicon substrate
On anchorage part and the overhanging portion for being collectively forming hanging acoustic wave cavity with described silicon substrate.
3. rf mems wave filter according to claim 2 is it is characterised in that the overhanging portion of described hanging arm and anchoring
Part is multiple structure, comprising:
It is located at middle piezoelectric material layer；
Top electrode on described piezoelectric material layer；And
Hearth electrode under described piezoelectric material layer.
4. rf mems wave filter according to claim 3 is it is characterised in that described driver is integrally fixed at described silicon lining
The polysilicon layer for heating on bottom, it connects described hearth electrode, heats described top electrode and bottom electricity by direct or indirect
Pole changes electrode stress, thus driving described hanging arm angle change.
5. rf mems wave filter according to claim 3 is it is characterised in that the overhanging portion of described hanging arm and anchoring
Part also includes being attached to the silicon dioxide layer of protection outside hearth electrode.
6. rf mems wave filter according to claim 5 is it is characterised in that described hearth electrode includes:
Connect the first hearth electrode of described piezoelectric material layer；
It is connected to the second hearth electrode between described first hearth electrode and silicon dioxide layer of protection.
7. rf mems wave filter according to claim 6 is it is characterised in that described driver is integrally fixed at described silicon lining
The polysilicon layer for heating on bottom, it connects described silicon dioxide layer of protection.
8. the rf mems wave filter according to claim 3 or 6 it is characterised in that described top electrode material be tungsten,
One of molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminum or combination.
9. rf mems wave filter according to claim 6 it is characterised in that described first hearth electrode material be tungsten,
One of molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminum or combination.
10. rf mems wave filter according to claim 9 is it is characterised in that described second hearth electrode is for strengthening bottom
The titanium layer of electrode, is attached with described silicon dioxide layer of protection thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620626816.XU CN205901698U (en) | 2016-06-22 | 2016-06-22 | RFMEMS wave filter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620626816.XU CN205901698U (en) | 2016-06-22 | 2016-06-22 | RFMEMS wave filter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107204505A (en) * | 2017-05-31 | 2017-09-26 | 中国电子科技集团公司第十三研究所 | Microwave power divider of electromagnetism interference and preparation method thereof |
| CN108539334A (en) * | 2018-04-02 | 2018-09-14 | 华进半导体封装先导技术研发中心有限公司 | A kind of micro-strip silicon substrate microwave filter and its manufacturing method based on porous silicon |
-
2016
- 2016-06-22 CN CN201620626816.XU patent/CN205901698U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107204505A (en) * | 2017-05-31 | 2017-09-26 | 中国电子科技集团公司第十三研究所 | Microwave power divider of electromagnetism interference and preparation method thereof |
| CN108539334A (en) * | 2018-04-02 | 2018-09-14 | 华进半导体封装先导技术研发中心有限公司 | A kind of micro-strip silicon substrate microwave filter and its manufacturing method based on porous silicon |
| CN108539334B (en) * | 2018-04-02 | 2020-02-07 | 华进半导体封装先导技术研发中心有限公司 | Micro-strip silicon-based microwave filter based on porous silicon and manufacturing method thereof |
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