CN205880267U - Easy abluent infrared cutoff filter - Google Patents

Easy abluent infrared cutoff filter Download PDF

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Publication number
CN205880267U
CN205880267U CN201620804514.7U CN201620804514U CN205880267U CN 205880267 U CN205880267 U CN 205880267U CN 201620804514 U CN201620804514 U CN 201620804514U CN 205880267 U CN205880267 U CN 205880267U
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material layer
film
mgf2
layer
index material
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CN201620804514.7U
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Inventor
孙波
焦涛
张昊
高履阳
付勇
李智超
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Nanyang Lida Photoelectric Co ltd
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LIDA OPTICAL AND ELECTRONIC CO Ltd
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Abstract

The utility model discloses an easy abluent infrared cutoff filter, including the base plate, set up the composite membrane layer on the base plate, composite membrane layer be provided with outer rete outward, the base plate be glass substrate, composite membrane layer including in turn superimposed high -index material layer and low -index material layer, outer rete be siO2+MgF2 or mgF2 NULL's rete. The utility model discloses a does through the setting of outer rete, the film forming parameter of especially optimizing outer rete reduce the waterproof angle of light filter, because the special chemical property of buffer layer material, the not weakness of acid and alkali -resistance of waterproof coating materials has been overcome in the washing of acid and alkali -resistance solution, the effectual solution owing to the silk screen printing among the prior art the dirty abnormal phenomena of waiting that cutting procedure's introduction is difficult to to clean at the glass surface adsorption, the structure is comparatively simple, easily penetration and promotion, and can improve enterprise competitiveness greatly.

Description

A kind of cutoff filter of easy cleaning
Technical field
This utility model relates to filter technology field, particularly to the cutoff filter of a kind of easy cleaning.
Background technology
Cutoff filter is a kind of optical filter allowing visible light-transmissive and end or reflect infrared light, mainly For digital camera, mobile phone, computer camera, monitor, videophone etc., can make to filter off height by the light wave after taking the photograph phase camera lens Frequency range, only allows a range of low frequency light wave pass through.Plus IR-cut between camera lens and CCD or cmos image sensor Optical filter, can effectively suppress higher than CCD or cmos image sensor spatial frequency light wave by and cause ripple disturbance, and have Effect ground suppression infrared waves, improves colored CCD, cmos image sensor effective resolution and colour reproduction, makes image clear With stable.
Along with the most perfect of product quality is pursued by fast development and the people of science and technology, cutoff filter is in processing During be gradually introduced the operations such as cutting, silk-screen.But easily at glass surface absorption dust and dirty in these manufacturing procedures Dirt, and these dusts or dirty wash poor effect the super of glass surface, it is necessary to manual wipping, therefore greatly reduce production Efficiency, improves cost.
The patent of Publication No. CN 104947044 A discloses the film plating process of a kind of cutoff filter, uses spy The parameter of fixed ultrasonic cleaner sets and the proportioning of cleanout fluid, effectively raises the cleaning performance of ultrasonic cleaner, The superhard waterproof membrane of plating 95nm thickness is added, by using above-mentioned technique adjustment to stop coating materials in coating process at film layer outermost layer The abnormal phenomenas such as " the rough surface difficulty wiping " and " easily having dirty and grey dirt pits " formed.But this invented technology is the most multiple Miscellaneous, it is weak to the special nature of acid-base solution owing to waterproof coating materials has, causes the parameter needing specific ultrasonic cleaner to set Determining and the proportioning of cleanout fluid, therefore this patent of invention has certain limitation, and coating process is complicated.
Therefore it provides a kind of simple in construction, and difficulty can be adsorbed to due to the introducing of silk-screen, cutting action at glass surface With the dirty cutoff filter quickly processed of wiping, it it has been a good problem to study.
Summary of the invention
In order to overcome above-mentioned deficiency of the prior art, utility model provides a kind of structure letter, and can effectively solve the problem that The dirty problem easy cleaning cutoff filter being difficult to clean in cutoff filter surface.
The purpose of this utility model is achieved in that
The cutoff filter of a kind of easy cleaning, including substrate 4, is arranged on the composite film on substrate 4, and its feature exists In: described composite film is outside equipped with theca externa 1;
Described substrate 4 is glass substrate;Described composite film includes the high refractive index material layer 2 that is superimposed and low Refractive index material 3;
Described high refractive index material layer 2 is Ti3O5 material layer, vacuum 2.0E-2Pa during plated film, rate of film build 0.2---0.4nm/s, thickness is 10---150nm, and electron gun deflection current is 390mA;
Described low refractive index material layer 3 is SiO2 layer, vacuum 1.3E-2Pa during plated film, rate of film build 0.8--- 1.6nm/s, thickness is 50---200nm, and electron gun deflection current is 160mA;
Described theca externa 1 is the film layer that SiO2+MgF2 or MgF2 material is constituted;
Actively beneficial effect: this utility model is by by the setting of theca externa, especially optimizing the film forming ginseng of theca externa Number reduces the waterproof angle of optical filter, due to the chemical property that cushioning layer material is special, the cleaning of acid and alkali-resistance solution, overcomes waterproof The weakness of coating materials not acid and alkali-resistance, effectively solves in prior art owing to the introducing of silk-screen cutting action is in glass surface suction The attached dirty abnormal phenomena such as grade being difficult to wiping, structure is relatively simple, it is easy to penetration and promotion, and can be greatly improved competition among enterprises Power.
Accompanying drawing explanation
Fig. 1 is structural representation one of the present utility model;
Fig. 2 is structural representation two of the present utility model;
Figure is: theca externa 1, high refractive index material layer 2, low refractive index material layer 3, substrate 4.
Detailed description of the invention
Below in conjunction with the accompanying drawings, this utility model is described further:
The cutoff filter of a kind of easy cleaning, including substrate 4, is arranged on the composite film on substrate 4, and described answers Close film layer and be outside equipped with theca externa 1;
Described substrate 4 is glass substrate;Described composite film includes the high refractive index material layer 2 that is superimposed and low Refractive index material 3;
Described high refractive index material layer 2 is Ti3O5 material layer, rate of film build 0.2nm/s, 0.25nm/s, 0.3nm/s, 0.35nm/s、0.4nm/s;Described low refractive index material layer 3 is SiO2 layer, rate of film build 0.8nm/s, 0.9nm/s, 1.0nm/s、1.1nm/s、1.2nm/s、1.3nm/s、1.4nm/s、1.5nm/s、1.6nm/s;Wherein five oxidation Tritanium/Trititanium and oxidation The ion auxiliary energy of silicon is respectively BV:700-1300V, BI:700-1300mA and BV:600-1100V, BI:600- 1100mA。
Described theca externa 1 is the film layer that SiO2+MgF2 or MgF2 material is constituted;
The coating process parameter of the MgF2 of described theca externa is: vacuum 8.0E-3Pa during plated film, and MgF2 thickness is about 10---100nm, IB voltage 200-900V, electric current 200-900mA, rate of film build 0.2---0.8nm/s, electron gun deflection current For 21mA.
Embodiment 1
As it is shown in figure 1, the cutoff filter of a kind of easy cleaning, including substrate 4, it is arranged on the composite membrane on substrate 4 Layer, described composite film is outside equipped with theca externa 1;Described composite film includes the high refractive index material layer 2 being superimposed With low refractive index material layer 3;From substrate 4 upwards set gradually into low refractive index material layer 3 and high refractive index material layer 2 alternately Arrange, final for arranging theca externa 1 outside high refractive index material layer 2;Described theca externa is the film that SiO2+MgF2 material is constituted Layer;
Described high refractive index material layer 2 is Ti3O5 material layer, rate of film build 0.2nm/s, 0.25nm/s, 0.3nm/s, 0.35nm/s、0.4nm/s;Described low refractive index material layer 3 is SiO2 layer, rate of film build 0.8nm/s, 0.9nm/s, 1.0nm/s、1.1nm/s、1.2nm/s、1.3nm/s、1.4nm/s、1.5nm/s、1.6nm/s;The MgF2's of described theca externa Coating process parameter is: vacuum 8.0E-3Pa during plated film, and MgF2 thickness is about 10---100nm, IB voltage 200-900V, electricity Stream 200-900mA, rate of film build 0.2---0.8nm/s, electron gun deflection current is 21mA.
Embodiment 2
As it is shown in figure 1, the cutoff filter of a kind of easy cleaning, including substrate 4, it is arranged on the composite membrane on substrate 4 Layer, described composite film is outside equipped with theca externa 1;Described composite film includes the high refractive index material layer 2 being superimposed With low refractive index material layer 3;From substrate 4 upwards set gradually into low refractive index material layer 3 and high refractive index material layer 2 alternately Arrange, final for arranging theca externa 1 outside high refractive index material layer 2;Described theca externa is the film layer that MgF2 material is constituted;
Described high refractive index material layer 2 is Ti3O5 material layer, rate of film build 0.2nm/s, 0.25nm/s, 0.3nm/s, 0.35nm/s、0.4nm/s;Described low refractive index material layer 3 is SiO2 layer, rate of film build 0.8nm/s, 0.9nm/s, 1.0nm/s、1.1nm/s、1.2nm/s、1.3nm/s、1.4nm/s、1.5nm/s、1.6nm/s;The MgF2's of described theca externa Coating process parameter is: vacuum 8.0E-3Pa during plated film, and MgF2 thickness is about 10---100nm, IB voltage 200-900V, electricity Stream 200-900mA, rate of film build 0.2---0.8nm/s, electron gun deflection current is 21mA.
Embodiment 3
As in figure 2 it is shown, the cutoff filter of a kind of easy cleaning, including substrate 4, it is arranged on the composite membrane on substrate 4 Layer, described composite film is outside equipped with theca externa 1;Described composite film includes the high refractive index material layer 2 being superimposed With low refractive index material layer 3;From substrate 4 upwards set gradually into high refractive index material layer 2 and low refractive index material layer 3 alternately Arrange, final for arranging theca externa 1 outside high refractive index material layer 2;Described theca externa is the film that SiO2+MgF2 material is constituted Layer;
Described high refractive index material layer 2 is Ti3O5 material layer, rate of film build 0.2nm/s, 0.25nm/s, 0.3nm/s, 0.35nm/s、0.4nm/s;Described low refractive index material layer 3 is SiO2 layer, rate of film build 0.8nm/s, 0.9nm/s, 1.0nm/s、1.1nm/s、1.2nm/s、1.3nm/s、1.4nm/s、1.5nm/s、1.6nm/s;The MgF2's of described theca externa Coating process parameter is: vacuum 8.0E-3Pa during plated film, and MgF2 thickness is about 10---100nm, IB voltage 200-900V, electricity Stream 200-900mA, rate of film build 0.2---0.8nm/s, electron gun deflection current is 21mA.
Embodiment 4
As in figure 2 it is shown, the cutoff filter of a kind of easy cleaning, including substrate 4, it is arranged on the composite membrane on substrate 4 Layer, described composite film is outside equipped with theca externa 1;Described composite film includes the high refractive index material layer 2 being superimposed With low refractive index material layer 3;From substrate 4 upwards set gradually into high refractive index material layer 2 and low refractive index material layer 3 alternately Arrange, final for arranging theca externa 1 outside high refractive index material layer 2;Described theca externa is the film layer that MgF2 material is constituted;
Described high refractive index material layer 2 is Ti3O5 material layer, rate of film build 0.2nm/s, 0.25nm/s, 0.3nm/s, 0.35nm/s、0.4nm/s;Described low refractive index material layer 3 is SiO2 layer, rate of film build 0.8nm/s, 0.9nm/s, 1.0nm/s、1.1nm/s、1.2nm/s、1.3nm/s、1.4nm/s、1.5nm/s、1.6nm/s;The MgF2's of described theca externa Coating process parameter is: vacuum 8.0E-3Pa during plated film, and MgF2 thickness is about 10---100nm, IB voltage 200-900V, electricity Stream 200-900mA, rate of film build 0.2---0.8nm/s, electron gun deflection current is 21mA.
The present invention, by changing the optimization of outermost layer MgF2 conventional process parameters, uses following technological parameter: during plated film Vacuum 8.0E-3Pa, thickness is about 10---100nm, IB voltage 200-900V, electric current 200-900mA, rate of film build 0.2--- 0.8nm/s, electron gun deflection current is 21mA so that film layer firmness is best, and overcomes traditional handicraft and use merely oxygen Change titanium and the most washable shortcoming of silicon nitride process optical filter, also overcome outermost layer in CN 104947044 A patent and use waterproof Coating materials is weak to the shortcomings such as ultrasonic waves for cleaning, thus improves the product quality of optical filter.
This utility model, by by the setting of theca externa, especially optimizes the one-tenth film parameters of theca externa to reduce optical filter Waterproof angle, due to the chemical property that cushioning layer material is special, the cleaning of acid and alkali-resistance solution, overcomes waterproof coating materials and is weak to soda acid Weakness, effectively solves in prior art owing to introducing of silk-screen cutting action is difficult to the dirty of wiping in glass surface absorption The abnormal phenomenas such as dirt, structure is relatively simple, it is easy to penetration and promotion, and can be greatly improved enterprise competitiveness.
Above case study on implementation is merely to illustrate preferred implementation of the present utility model, but on this utility model is not limited to State embodiment, in the ken that described field those of ordinary skill is possessed, spirit of the present utility model and principle it Interior made any amendment, equivalent replacement and improvement etc., be regarded as the protection domain of the application.

Claims (5)

1. a cutoff filter for easy cleaning, including substrate (4), is arranged on the composite film on substrate (4), its feature It is: described composite film is outside equipped with theca externa (1).
The cutoff filter of a kind of easy cleaning the most according to claim 1, it is characterised in that: described substrate (4) For glass substrate;Described composite film includes high refractive index material layer (2) and the low refractive index material layer (3) being superimposed.
The cutoff filter of a kind of easy cleaning the most according to claim 2, it is characterised in that: described high index of refraction Material layer (2) is Ti3O5 material layer, vacuum 2.0E-2Pa during plated film, rate of film build 0.2---0.4nm/s, thickness 10--- 150nm, electron gun deflection current is 390mA.
The cutoff filter of a kind of easy cleaning the most according to claim 2, it is characterised in that: described low-refraction Material layer (3) is SiO2 layer, vacuum 1.3E-2Pa during plated film, rate of film build 0.8---1.6nm/s, thickness 50---200nm, Electron gun deflection current is 160mA.
The cutoff filter of a kind of easy cleaning the most according to claim 1, it is characterised in that: described theca externa (1) be SiO2+MgF2 or MgF2 material constitute film layer, vacuum 8.0E-3Pa during theca externa MgF2 plated film, MgF2 thickness is about For 10---100nm, IB voltage 200-900V, electric current 200-900mA, rate of film build 0.2---0.8nm/s, electron gun deflection electricity Stream is 21mA.
CN201620804514.7U 2016-07-29 2016-07-29 Easy abluent infrared cutoff filter Active CN205880267U (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106054299A (en) * 2016-07-29 2016-10-26 利达光电股份有限公司 Easy-to-clean infrared cut-off filter and coating method thereof
CN106940456A (en) * 2017-04-25 2017-07-11 舜宇光学(中山)有限公司 The antireflective film and its manufacture craft of a kind of large angle glass lens
CN107300727A (en) * 2017-08-04 2017-10-27 舜宇光学(中山)有限公司 Antireflective film lens and preparation method thereof
CN107678081A (en) * 2017-09-14 2018-02-09 利达光电股份有限公司 A kind of low haze cutoff filter and its film plating process
WO2022052268A1 (en) * 2020-09-14 2022-03-17 诚瑞光学(深圳)有限公司 Lens and lens assembly

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106054299A (en) * 2016-07-29 2016-10-26 利达光电股份有限公司 Easy-to-clean infrared cut-off filter and coating method thereof
CN106940456A (en) * 2017-04-25 2017-07-11 舜宇光学(中山)有限公司 The antireflective film and its manufacture craft of a kind of large angle glass lens
CN107300727A (en) * 2017-08-04 2017-10-27 舜宇光学(中山)有限公司 Antireflective film lens and preparation method thereof
CN107300727B (en) * 2017-08-04 2023-08-11 舜宇光学(中山)有限公司 Antireflection film lens and preparation method thereof
CN107678081A (en) * 2017-09-14 2018-02-09 利达光电股份有限公司 A kind of low haze cutoff filter and its film plating process
CN107678081B (en) * 2017-09-14 2024-02-23 南阳利达光电有限公司 Low-haze infrared cut-off filter and film coating method thereof
WO2022052268A1 (en) * 2020-09-14 2022-03-17 诚瑞光学(深圳)有限公司 Lens and lens assembly

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GR01 Patent grant
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TR01 Transfer of patent right

Effective date of registration: 20190712

Address after: 473000 No. 366 Xinchen West Road, Nanyang High-tech Zone, Henan Province

Patentee after: Nanyang Lida Photoelectric Co.,Ltd.

Address before: 473003 No. 508 Industrial Road, Nanyang City, Henan Province

Patentee before: LIDA OPTICAL AND ELECTRONIC Co.,Ltd.

CB03 Change of inventor or designer information
CB03 Change of inventor or designer information

Inventor after: Sun Bo

Inventor after: Jiao Taotao

Inventor after: Zhang Hao

Inventor after: Gao Lvyang

Inventor after: Fu Yong

Inventor after: Li Zhichao

Inventor before: Sun Bo

Inventor before: Jiao Tao

Inventor before: Zhang Hao

Inventor before: Gao Lvyang

Inventor before: Fu Yong

Inventor before: Li Zhichao