CN205863169U - Gapless micro-display based on nitride LED array and flip-chip - Google Patents
Gapless micro-display based on nitride LED array and flip-chip Download PDFInfo
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- CN205863169U CN205863169U CN201620669380.2U CN201620669380U CN205863169U CN 205863169 U CN205863169 U CN 205863169U CN 201620669380 U CN201620669380 U CN 201620669380U CN 205863169 U CN205863169 U CN 205863169U
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Abstract
The utility model discloses gapless micro-display based on nitride LED array and flip-chip, gapless micro-display includes substrate and is arranged on the multiple μ LED unit being arranged in array in substrate, each μ LED unit includes from the close-by examples to those far off being successively set on suprabasil N-type layer, emission layer and P-type layer, is provided with ionic isolation grid between the adjacent μ LED unit being arranged in array；The degree of depth of described ionic isolation grid arrives N-type layer bottom.Each μ LED unit is isolated by the gapless micro-display based on nitride LED array that this utility model provides by ionic isolation grid, it is not result in interfering and producing crosstalk phenomenon between neighbor in μ LED array, and then contrast and the resolution of nitride μ LED array miniscope can be improved, moreover it is possible to realize less surface damage and higher income.
Description
Technical field
This utility model relates to miniature light-emitting diode display, is specifically related to gapless micro-display based on nitride LED array
And flip-chip.
Background technology
Nowadays, miniature sizes LED array based on group III nitride material has caused academia and industrial
Extensive concern.μ LED array can apply to self luminous miniscope, single-chip high voltage AC-LED and may be used for light heredity
Learn the light source of neuroregulation.Particularly, the active matrix driving of μ LED array micro-display can be by being integrated into silicon complementary type
Apply on the substrate of metal-oxide semiconductor (MOS) (CMOS).Have a lot of latent based on III-nitride μ LED array
Can, high brightness, high-contrast, high-resolution, reliability is high, and the life-span is long, compact conformation, can be at harsh environment and bright
Daylight environment under run.Even can be compared advantageously with many traditional liquid crystal displays (LCD) based on micro display technology
OLED, digital light treatment technology (DLP) and laser beam control technology (LBS).But, it is previously reported by the miniature display of μ LED array
Device, based on nonplanar structure, is formed forming of a series of table top by plasma etching process, by between etching thing
Manage gap thus obtain the interval between neighbor.Non-planar configuration based on III nitride μ LED array may result in μ
The poor-performing of LED array miniscope.Dry method etch technology is typically to mesa-isolated thus creates some ditches of formation
Groove or gap, the effort proposition of the spacing dimension reducing μ LED array for high micro-display resolution limits and introduces
Surface damage, brings difficulty for height output.Additionally, scattering of light/can reduce micro-from the reflection of the mesa side walls of adjacent pixel
The contrast of escope and resolution.
Summary of the invention
For solving the problems referred to above, this utility model provides a kind of gapless micro-display based on nitride LED array,
Prevent light from traveling to neighbor and produce crosstalk, improve contrast and the resolution of nitride μ LED array miniscope.This
Utility model additionally provides a kind of flip-chip based on this gapless micro-display.
Above-mentioned purpose is achieved by the following technical solution:
A kind of gapless micro-display based on nitride LED array, including substrate and be arranged in substrate in array arrange
Multiple μ LED unit of cloth, each μ LED unit includes from the close-by examples to those far off being successively set on suprabasil N-type layer, emission layer and p-type
Layer, is provided with ionic isolation grid between the adjacent μ LED unit being arranged in array；The degree of depth of described ionic isolation grid arrives at the bottom of N-type layer
End.
Further, the height of described ionic isolation grid is 0.01～1.5 μm, and thickness is 0.1～10 μm.
Further, described ionic isolation grid by photoetching and inject ion formation.
Further, described ion includes H+、He+、N+、F+、Mg+、Ar+、Zn+、O+、Ti+、Fe+、Cr+、Mn+、Co+。
Further, described emission layer is III-nitride quantum well structure or heterojunction structure.
Further, the material of described emission layer includes one or more combination following: InxGa1-xN/Inx’Ga1-x’N,
Wherein, x with x ' is unequal；GaN/AlGN；AlxGa1-xN/Alx’Ga1-x’N, wherein, x with x ' is unequal；InxAlyGa1-x-yN/
Inx’Aly’Ga1-x’-y’N, wherein, x with x ' is unequal, y with y ' is unequal；GaN/InxAlyGa1-x-yN。
Further, described substrate include transparency carrier, deposition III-nitride cushion on the transparent substrate and
The N-type layer of III-nitride cushion opposite side；Each N-type layer of μ LED unit is connected with the N-type layer of substrate.
Further, the N-type layer of described substrate is provided with the N-type contact jaw as each μ LED unit common cathode；Each μ
The P-type layer of LED unit is provided with independent anode p-type contact jaw.
A kind of flip-chip, including active matrix Si-CMOS integrated circuit backboard with as above based on nitride LED
The gapless micro-display of array, described gapless micro-display is by using eutectic jointing metal pad or bump flip-chip bonded
On described Si-CMOS integrated circuit backboard.
Further, one or more during described metal includes stannum, gold, silver, indium.
The beneficial effects of the utility model:
The gapless micro-display based on nitride LED array that this utility model provides passes through ionic isolation grid by each
μ LED unit is isolated, and is not result in interfering and producing crosstalk phenomenon between neighbor in μ LED array, and then permissible
Improve contrast and the resolution of nitride μ LED array miniscope, moreover it is possible to realize less surface damage and higher receipts
Benefit.
Accompanying drawing explanation
Fig. 1 is the structural representation of gapless micro-display based on nitride LED array；
Fig. 2 is the structural representation of flip-chip.
Wherein, 1, substrate；2, μ LED unit；3, N-type layer；4, emission layer；5, P-type layer；6, ionic isolation grid；7, transparent base
Plate；8, III-nitride cushion；9, N-type layer；10, N-type contact jaw；11, p-type contact jaw；12, Si-CMOS integrated circuit
Backboard；13, eutectic jointing metal pad or bump；14, CMOS contact jaw.
Detailed description of the invention
The technical solution of the utility model is described in detail below in conjunction with specific embodiment.
A kind of based on nitride LED array gapless micro-display as shown in Figure 1, including substrate 1 be arranged on base
The multiple μ LED unit 2 being arranged in array, each μ LED unit 2 includes the N from the close-by examples to those far off set gradually on the base 1 at the end 1
Type layer 3, emission layer 4 and P-type layer 5, be provided with ionic isolation grid 6 between the adjacent μ LED unit 2 being arranged in array；Described ion every
The degree of depth from grid 6 arrives N-type layer 3 bottom.The ionic species of ionic isolation grid can be H+, He+, N+, F+, Mg+, Ar+, Zn+,
O+,Ti+,Fe+,Cr+,Mn+,Co+。
Ionic isolation grid are by photoetching and inject ion formation, define and pattern the array of μ LEDs, the most each μ LED
The surrounding of unit is all to isolate with the little marginal area injecting ion.The degree of depth of ionic isolation grid should reach N-type layer
(0.01～1.5 μm), the width of ionic isolation grid can be 0.1～10 μm.Each isolated μ LED unit can be as miniature
One array of pixels of display.The size of pixel is 1～100 μm, and this depends on the resolution of micro-display, and μ LED battle array
The spacing range of row is 1.1 μm～110 μm.The resolution of micro-display and area are to be determined by these pixels.Such as, 640 ×
The micro-display of 480 pixels, its area can reach 0.96 × 0.72mm2～70.4 × 52.8mm2.These pixels (μ LED unit)
Share a common cathode (N-type contact jaw 10), but have individually controllable anode (p-type contact jaw 11).
Described emission layer is III-nitride quantum well structure or heterojunction structure, material include following one or more
Combination: InxGa1-xN/Inx’Ga1-x’N, wherein, x and x ' unequal (0≤x≤0.4, x < x ')；GaN/AlGN；AlxGa1-xN/
Alx’Ga1-x’N, wherein, x and x ' unequal (0≤x≤0.4, x < x ')；InxAlyGa1-x-yN/Inx’Aly’Ga1-x’-y’N, wherein, x
Unequal with x ' (0≤x≤0.2, x < x '), y and y ' unequal (0≤y≤0.2, y < y ')；GaN/InxAlyGa1-x-yN.This section
In bracket, the span of x, y is only a part of example, and x, y value is not limited to this scope.
Substrate 1 includes transparency carrier 7, the III-nitride cushion 8 being deposited on transparency carrier 7 and Group III nitride
The N-type layer 9 of thing cushion 8 opposite side；The N-type layer 3 of each μ LED unit 2 is connected with the N-type layer 9 of substrate 1.The N-type layer of substrate 1
It is provided with the N-type contact jaw 10 as each μ LED unit 2 common cathode；The P-type layer 5 of each μ LED unit 2 is provided with independent sun
Pole p-type contact jaw 11.
In order to store data and drive each single μ LED, by using eutectic jointing metal pad or bump upside-down mounting to connect
Closing, μ LED array can be integrated on driven with active matrix Si-CMOS integrated circuit (IC) backboard.Pass through flip-chip
Technology, can set up contact between the most millions of thousands of μ LED and CMOS matrix driving.Material examples bag that can be bonding
Contain but be not limited only to stannum, gold, silver, indium or its alloy.Flip-chip schematic diagram is as in figure 2 it is shown, include that Si-CMOS integrated circuit is carried on the back
Plate 12 and above-mentioned gapless micro-display based on nitride LED array, described gapless micro-display is by using eutectic
Jointing metal pad or bump 13 flip-chip bonded are on described Si-CMOS integrated circuit backboard 12.14 is Si-CMOS contact jaw.
The plane μ LED array structure that the utility model proposes can be effectively isolated device at the bottom of the GaN base of neighbor, ion
The resistance injecting isolation may be up to 1010～1012Ω.The optical property of GaN also will change after ion implantation.Therefore, even
Photon energy also can be absorbed less than the light of GaN band gap.Being centered around the ionic isolation grid around each μ LED unit can be by μ LED
Carry out electrical isolation between neighbor in array, as an opaque barrier, prevent light travel to neighbor from
And produce crosstalk phenomenon.This structure will finally improve contrast and the resolution of nitride μ LED array miniscope, also
Less surface damage and higher income can be realized.
The effect of above-described embodiment indicates that essentiality content of the present utility model, but it is new not limit this practicality with this
The protection domain of type.It will be understood by those within the art that, the technical solution of the utility model can be modified
Or equivalent, without deviating from essence and the protection domain of technical solutions of the utility model.
Claims (10)
1. a gapless micro-display based on nitride LED array, is arranged in array including substrate and being arranged in substrate
Multiple μ LED unit, each μ LED unit includes from the close-by examples to those far off being successively set on suprabasil N-type layer, emission layer and P-type layer,
It is characterized in that: between the adjacent μ LED unit being arranged in array, be provided with ionic isolation grid；The degree of depth of described ionic isolation grid arrives
Reach N-type layer bottom.
Gapless micro-display based on nitride LED array the most according to claim 1, it is characterised in that: described from
The height of sub-isolated gate is 0.01～1.5 μm, and thickness is 0.1～10 μm.
Gapless micro-display based on nitride LED array the most according to claim 1 and 2, it is characterised in that: described
Ionic isolation grid are by photoetching and inject ion formation.
Gapless micro-display based on nitride LED array the most according to claim 3, it is characterised in that: described from
Attached bag includes H+、He+、N+、F+、Mg+、Ar+、Zn+、O+、Ti+、Fe+、Cr+、Mn+、Co+。
Gapless micro-display based on nitride LED array the most according to claim 1 and 2, it is characterised in that: described
Emission layer is III-nitride quantum well structure or heterojunction structure.
Gapless micro-display based on nitride LED array the most according to claim 5, it is characterised in that described
The material penetrating layer is selected from: InxGa1-xN/Inx’Ga1-x’N, wherein, x with x ' is unequal；GaN/AlGN；AlxGa1-xN/Alx’Ga1-x’
N, wherein, x with x ' is unequal；InxAlyGa1-x-yN/Inx’Aly’Ga1-x’-y’N, wherein, x with x ' is unequal, y with y ' is unequal；
GaN/InxAlyGa1-x-yN。
Gapless micro-display based on nitride LED array the most according to claim 1 and 2, it is characterised in that: described
Substrate include transparency carrier, deposition III-nitride cushion on the transparent substrate and III-nitride cushion another
The N-type layer of side；Each N-type layer of μ LED unit is connected with the N-type layer of substrate.
Gapless micro-display based on nitride LED array the most according to claim 7, it is characterised in that: described base
The N-type layer at the end is provided with the N-type contact jaw as each μ LED unit common cathode；The P-type layer of each μ LED unit is provided with independence
Anode p-type contact jaw.
9. a flip-chip, it is characterised in that: include active matrix Si-CMOS integrated circuit backboard and such as claim 1 or 2
Described gapless micro-display based on nitride LED array, described gapless micro-display engages gold by using eutectic
Belong to pad or bump flip-chip bonded on described Si-CMOS integrated circuit backboard.
Flip-chip the most according to claim 9, it is characterised in that: described metal includes the one in stannum, gold, silver, indium
Or it is multiple.
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| CN201620669380.2U CN205863169U (en) | 2016-06-30 | 2016-06-30 | Gapless micro-display based on nitride LED array and flip-chip |
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| CN106024825A (en) * | 2016-06-30 | 2016-10-12 | 上海君万微电子科技有限公司 | Gapless micro display based on nitride LED array |
| CN107871454A (en) * | 2016-09-26 | 2018-04-03 | 启端光电股份有限公司 | micro light emitting diode display panel |
| CN108428713A (en) * | 2017-02-13 | 2018-08-21 | 宏碁股份有限公司 | Light emitting diode indicator and its manufacturing method |
| JP2018185515A (en) * | 2017-04-25 | 2018-11-22 | ルーメンス カンパニー リミテッド | Micro LED display device |
| CN109273479A (en) * | 2018-09-20 | 2019-01-25 | 上海天马微电子有限公司 | Display panel and manufacturing method thereof |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106024825A (en) * | 2016-06-30 | 2016-10-12 | 上海君万微电子科技有限公司 | Gapless micro display based on nitride LED array |
| CN107871454A (en) * | 2016-09-26 | 2018-04-03 | 启端光电股份有限公司 | micro light emitting diode display panel |
| CN108428713A (en) * | 2017-02-13 | 2018-08-21 | 宏碁股份有限公司 | Light emitting diode indicator and its manufacturing method |
| JP2018185515A (en) * | 2017-04-25 | 2018-11-22 | ルーメンス カンパニー リミテッド | Micro LED display device |
| US10847572B2 (en) | 2017-04-25 | 2020-11-24 | Lumens Co., Ltd. | Micro LED display device and method of fabricating the same |
| CN109273479A (en) * | 2018-09-20 | 2019-01-25 | 上海天马微电子有限公司 | Display panel and manufacturing method thereof |
| US10985205B2 (en) | 2018-09-20 | 2021-04-20 | Shanghai Tianma Micro-electronics Co., Ltd. | Display panel and method for manufacturing display panel |
| CN109273479B (en) * | 2018-09-20 | 2021-07-23 | 上海天马微电子有限公司 | Display panel and manufacturing method thereof |
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