CN205843679U - The capacitance-voltage conversion circuit of capacitor type MEMS inertial sensor closed loop detection - Google Patents
The capacitance-voltage conversion circuit of capacitor type MEMS inertial sensor closed loop detection Download PDFInfo
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- CN205843679U CN205843679U CN201620748398.1U CN201620748398U CN205843679U CN 205843679 U CN205843679 U CN 205843679U CN 201620748398 U CN201620748398 U CN 201620748398U CN 205843679 U CN205843679 U CN 205843679U
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Abstract
The utility model discloses the capacitance-voltage conversion circuit of a kind of capacitor type MEMS inertial sensor closed loop detection, including input common-mode feedback module, the first amplification module and the second amplification module；Inverting input and the feedback output end of input common-mode feedback module electrically connect with the outfan of capacitor type MEMS inertial sensor and the input of the first amplification module, the positive input end grounding of input common-mode feedback module；The outfan of the first amplification module and the input electrical connection of the second amplification module；First amplification module is also connected with the first reset signal input, and the second amplification module is also connected with the second reset signal input；After the first reset signal input stops input the first reset signal Preset Time, the second reset signal input stops inputting the second reset signal again.The capacitance-voltage conversion circuit of above-mentioned capacitor type MEMS inertial sensor closed loop detection, detection accuracy is high, noise is low and conversion accuracy is high.
Description
Technical field
This utility model relates to sensor technical field, particularly relates to a kind of capacitor type MEMS inertial sensor closed loop inspection
The capacitance-voltage conversion circuit surveyed.
Background technology
Capacitor type MEMS(Micro-Electro-Mechanical Systems, MEMS) inertial sensor comprises
MEMS gyro and accelerometer, be the microsensor that object of which movement angular velocity or acceleration are converted to capacitance, have micro-
The advantages such as type, low-power consumption, low cost.Common capacitance type MEMS inertial sensor interface circuit has open loop detection and closed loop at present
Detection two ways.Closed loop detection is that capacitance detecting result is negative by constituting in electrostatic force feedback to sensor sensing mass
Feedback control loop, reaches the effect that sensor mass block changes near center location.Closed loop detection has relative to open loop detection
The advantages such as the linearity is high, reliability is high, precision is high.
During closed loop detection, driving pulse can be coupled to detect port by parasitic capacitance, affects detection accuracy, existing
Capacitance-voltage change-over circuit lack the overoming measwres being directed to this coupling phenomenon.Additionally capacitance-voltage in existing technologies
Too noisy, conversion accuracy is inadequate, and the electric capacity that can detect typically can only achieve fF rank.
Utility model content
The technical problems to be solved in the utility model is for above-mentioned the deficiencies in the prior art, it is provided that a kind of capacitor type MEMS
The capacitance-voltage conversion circuit of inertial sensor closed loop detection, detection accuracy is high, noise is low and conversion accuracy is high.
For solving above-mentioned technical problem, technical solution adopted in the utility model is: a kind of capacitor type MEMS inertia passes
The capacitance-voltage conversion circuit of sensor closed loop detection, amplifies mould including input common-mode feedback module, the first amplification module and second
Block；
The inverting input of described input common-mode feedback module and the outfan of capacitor type MEMS inertial sensor and described
The input electrical connection of the first amplification module；The feedback output end of described input common-mode feedback module is used to described capacitor type MEMS
Property the outfan of sensor and the input electrical connection of described first amplification module；The positive of described input common-mode feedback module is defeated
Enter to hold ground connection；
The outfan of described first amplification module electrically connects with the input of described second amplification module；
Described first amplification module is also connected with the first reset signal input, and described second amplification module is also multiple with second
Position signal input part connects；After described first reset signal input stops input the first reset signal Preset Time, described
Second reset signal input stops inputting the second reset signal again.
Preferably, described input common-mode feedback module includes the first amplifier, the first electric capacity C1 and the second electric capacity C2；
The inverting input of described first amplifier respectively with two outfans of described capacitor type MEMS inertial sensor
Electrical connection, positive input end grounding；
One end of described first electric capacity C1 connects the outfan of described first amplifier, and the other end electrically connects described capacitor type
First outfan of MEMS inertial sensor and the input of described first amplification module；
One end of described second electric capacity C2 connects the outfan of described first amplifier, and the other end electrically connects described capacitor type
Second outfan of MEMS inertial sensor and the input of described first amplification module.
Preferably, described first amplification module includes the second amplifier, the 3rd electric capacity C3 and the 4th electric capacity C4；
The inverting input of described second amplifier and normal phase input end and the two of described capacitor type MEMS inertial sensor
Individual outfan electrically connects；The positive output end of described second amplifier is by described 3rd capacitor C3 and described second amplifier
Inverting input electrical connection；The reversed-phase output of described second amplifier is put with described second by described 4th capacitor C4
The normal phase input end electrical connection of big device；
Described 3rd electric capacity C3 two ends and described 4th electric capacity C4 two ends are the most also connected with the first reset signal input.
Preferably, described second amplification module includes the 3rd amplifier, the 5th electric capacity C5 and the 6th electric capacity C6；
The positive output end of described 3rd amplifier is anti-phase defeated by described 5th electric capacity C5 and described 3rd amplifier
Enter end electrical connection；The reversed-phase output of described 3rd amplifier is by the positive of described 6th electric capacity C6 with described 3rd amplifier
Input electrically connects；
Described 5th electric capacity C5 two ends and described 6th electric capacity C6 two ends are the most also connected with the second reset signal input.
Preferably, described second amplification module also includes the 7th electric capacity C7 and the 8th electric capacity C8；Described 3rd amplifier
Inverting input is electrically connected with the positive output end of described second amplifier by described 7th electric capacity C7；Described 3rd amplifier
Normal phase input end electrically connected with the reversed-phase output of described second amplifier by described 8th electric capacity C8.
Preferably, copped wave module is also included；The input of described copped wave module and described capacitor type MEMS inertial sensor
Outfan electrical connection；The input and described first of the outfan of described copped wave module and described input common-mode feedback module is put
The input electrical connection of big module.
Preferably, described copped wave module includes multiple bootstrapped switch；The control signal end of each described bootstrapped switch is with outer
Connect control signal electrical connection；The input/output terminal of each described bootstrapped switch defeated with capacitor type MEMS inertial sensor respectively
Go out the input electrical connection of end and the first amplification module.
Preferably, each described bootstrapped switch includes the first NMOS tube, the second NMOS tube, the 3rd NMOS tube, the 4th NMOS
Pipe, the 5th NMOS tube MN5, the 6th NMOS tube, the first PMOS, the second PMOS, the 3rd PMOS, the 11st electric capacity C11 and
Phase inverter INV；
The source electrode of described first NMOS tube and first end of described 11st electric capacity C11, the drain electrode of described 4th NMOS tube
Electrically connect with the source electrode of described 5th NMOS tube；The grid of described first NMOS tube and the grid of described first PMOS, described
The grid of the grid of the second PMOS, the drain electrode of described second PMOS and described 6th NMOS tube connects；A described NMOS
The drain electrode of pipe is connected with the drain electrode of described 6th NMOS tube, and electrically connects with the input of described bootstrapped switch；
The source electrode of described first PMOS connects external power source, the drain electrode of described first PMOS and described 11st electric capacity
The second end electrical connection of C11；
The source electrode of described second PMOS electrically connects with second end of described 11st electric capacity C11；Described second PMOS
Drain electrode also drain electrode with described second NMOS tube electrically connect；The grid of described second PMOS also with described 3rd PMOS
The drain electrode electrical connection of drain electrode and described second NMOS tube；
The grid of described second NMOS tube is connected with external power source, the source electrode of described second NMOS tube and described 3rd NMOS
The drain electrode electrical connection of pipe；
The grid of described 3rd NMOS tube is electrically connected with the grid of described 4th NMOS tube and the outfan of described phase inverter INV
Connect, the source ground of described 3rd NMOS tube；
The grid of described 4th NMOS tube also outfan with described phase inverter electrically connects, the source electrode of described 4th NMOS tube
Ground connection, the drain electrode of described 4th NMOS tube also source electrode with described 5th NMOS tube electrically connects；
The grid of described 5th NMOS tube is electrically connected with the grid of the input of described phase inverter INV and described 3rd PMOS
Connect, and electrically connect with the input of described bootstrapped switch；The drain electrode of described 5th NMOS tube also with the leakage of described 3rd PMOS
Pole electrically connects；
The source electrode of described 3rd PMOS connects external power source；
The source electrode of described 6th NMOS tube is as the outfan of described bootstrapped switch.
Preferably, trim capacitance module is also included；The outfan of described trim capacitance module is used to described capacitor type MEMS
Property sensor outfan electrical connection；The input of described trim capacitance module is connected with external signal equipment.
Preferably, described trim capacitance module includes the 9th electric capacity C9 and the tenth electric capacity C10 being in parallel.
Use and have the beneficial effects that produced by technique scheme: above-mentioned capacitor type MEMS inertial sensor closed loop detects
Capacitance-voltage conversion circuit, input common-mode feedback module can will by capacitor type MEMS inertial sensor transmit come signal warp
Feedbacking after crossing process, so the signal after feedback is processed by latter two amplification module, defeated in the first reset signal
After entering end stopping input the first reset signal Preset Time, the second reset signal input stops inputting the second reset signal again,
Make the accuracy of detection height of whole circuit and noise can be reduced.
Accompanying drawing explanation
Fig. 1 is capacitance-voltage conversion circuit one enforcement of this utility model capacitor type MEMS inertial sensor closed loop detection
Circuit diagram in example；
Fig. 2 is capacitance-voltage conversion circuit one enforcement of this utility model capacitor type MEMS inertial sensor closed loop detection
The circuit diagram of the bootstrapped switch in example；
Fig. 3 is capacitance-voltage conversion circuit one enforcement of this utility model capacitor type MEMS inertial sensor closed loop detection
Example controls time diagram.
Detailed description of the invention
With detailed description of the invention, this utility model is described in further detail below in conjunction with the accompanying drawings.
Seeing Fig. 1, in an embodiment, the capacitance-voltage conversion circuit of capacitor type MEMS inertial sensor closed loop detection can
To include inputting common-mode feedback module the 100, first amplification module 200 and the second amplification module 300.Input common-mode feedback module
The inverting input of 100 is electrically connected with the outfan of capacitor type MEMS inertial sensor 600 and the input of the first amplification module 200
Connect.The feedback output end of input common-mode feedback module 100 amplifies with the outfan of capacitor type MEMS inertial sensor 600 and first
The input electrical connection of module 200.The positive input end grounding of input common-mode feedback module 100.First amplification module 200 defeated
Go out end to electrically connect with the input of the second amplification module 300.First amplification module 200 is also with the first reset signal input even
Connecing, the second amplification module 300 is also connected with the second reset signal input.Input first is stopped at the first reset signal input
After reset signal Preset Time, the second reset signal input stops inputting the second reset signal again.
As a kind of embodiment, input common-mode feedback module 100 can include the first amplifier A1, the first electric capacity C1
With the second electric capacity C2.The inverting input of the first amplifier A1 respectively with two outputs of capacitor type MEMS inertial sensor 600
End electrical connection.The positive input end grounding of the first amplifier A1.One end of first electric capacity C1 connects the output of the first amplifier A1
End, the first outfan of other end electrical connection capacitor type MEMS inertial sensor 600 and the input of the first amplification module 200.
One end of second electric capacity C2 connects the outfan of the first amplifier A1, other end electrical connection capacitor type MEMS inertial sensor 600
The second outfan and the input of the first amplification module 200.
As a kind of embodiment, the first amplification module 200 can include the second amplifier A2, the 3rd electric capacity C3 and the
Four electric capacity C4.Two of the inverting input of the second amplifier A2 and normal phase input end and capacitor type MEMS inertial sensor 600
Outfan electrically connects.The positive output end of the second amplifier A2 passes through the 3rd capacitor C3 and the anti-phase input of the second amplifier A2
End electrical connection.The reversed-phase output of the second amplifier A2 normal phase input end electricity by the 4th capacitor C4 and the second amplifier A2
Connect.3rd electric capacity C3 two ends and the 4th electric capacity C4 two ends are the most also connected with the first reset signal input.
As a kind of embodiment, the second amplification module 300 can include the 3rd amplifier, the 5th electric capacity C5 and the 6th
Electric capacity C6.The positive output end of the 3rd amplifier A3 is electrically connected by the inverting input of the 5th electric capacity C5 and the 3rd amplifier A3
Connect.The reversed-phase output of the 3rd amplifier A3 is electrically connected by the normal phase input end of the 6th electric capacity C6 and the 3rd amplifier A3.The
Five electric capacity C5 two ends and the 6th electric capacity C6 two ends are the most also connected with the second reset signal input.
Wherein, the reset signal of the second amplification module 300 terminates a period of time in the reset signal of the first amplification module 200
After terminate again, first order low-frequency noise can be stored in the input capacitance of the second level, complete low-frequency noise is correlated with double
Sampling, thus reduce overall noise.
Further, the second amplification module 300 can also include the 7th electric capacity C7 and the 8th electric capacity C8.3rd amplifier A3
Inverting input by the electrical connection of the positive output end of the 7th electric capacity C7 and the second amplifier A2.The positive of the 3rd amplification A3 is defeated
Enter end to be electrically connected by the reversed-phase output of the 8th electric capacity C8 and the second amplifier A2.
Preferably, the capacitance-voltage conversion circuit of capacitor type MEMS inertial sensor closed loop detection can also include copped wave mould
Block 400.The input of copped wave module 400 electrically connects with the outfan of capacitor type MEMS inertial sensor 600.Copped wave module 400
Outfan electrically connect with the input of the input input of common-mode feedback module 100 and the first amplification module 200.Use copped wave
Technology, by twice modulation of useful signal, at low-frequency noise primary modulation high-frequency signal, then can reduce circuit by filtering whole
Bulk noise.
Preferably, copped wave module 400 can include multiple bootstrapped switch.The control signal end of each bootstrapped switch is with external
Control signal electrically connects.The input/output terminal of each bootstrapped switch respectively with the outfan of capacitor type MEMS inertial sensor and
The input electrical connection of the first amplification module 200.The input/output terminal of bootstrapped switch includes input and outfan.Wherein, certainly
Input and the outfan of lifting switch are interchangeable.
See Fig. 1, in an embodiment, each bootstrapped switch can include the first NMOS tube MN1, the second NMOS tube MN2,
3rd NMOS tube MN3, the 4th NMOS tube MN4, the 5th NMOS tube MN5, the 6th NMOS tube MN6, the first PMOS MP1, second
PMOS MP2, the 3rd PMOS MP3, the 11st electric capacity C11 and phase inverter INV.
Wherein, the source electrode of the first NMOS tube MN1 and first end of the 11st electric capacity C11, the drain electrode of the 4th NMOS tube MN4 and
The source electrode electrical connection of the 5th NMOS tube MN5.The grid of the first NMOS tube MN1 and the grid of the first PMOS MP1, the second PMOS
Grid MP2, the drain electrode MP2 of the second PMOS and the 6th NMOS tube MN6 grid connect.The drain electrode of the first NMOS tube MN1 with
The drain electrode of the 6th NMOS tube MN6 connects, and electrically connects with the input of bootstrapped switch.The source electrode of the first PMOS MP1 connects outside
Power vd D, the drain electrode of the first PMOS MP1 electrically connects with second end of the 11st electric capacity C11.The source electrode of the second PMOS MP1
Electrically connect with second end of the 11st electric capacity C11.The drain electrode of the second PMOS MP1 also drain electrode with the second NMOS tube MN2 is electrically connected
Connect.The grid of the second PMOS MP2 also electrically connects with the drain electrode of the 3rd PMOS MP3 and the drain electrode of the second NMOS tube MN2.
The grid of the second NMOS tube MN2 is connected with external power source, the source electrode of the second NMOS tube MN2 and the 3rd NMOS tube MN3
Drain electrode electrical connection.The grid of the 3rd NMOS tube MN3 and the outfan of the grid of the 4th NMOS tube MN4 and phase inverter INV are electrically connected
Connect.The source ground of the 3rd NMOS tube MN3.The grid of the 4th NMOS tube MN4 also outfan with phase inverter INV electrically connects.The
The source ground of four NMOS tube MN4.The drain electrode of the 4th NMOS tube MN4 also source electrode with the 5th NMOS tube MN5 electrically connects.5th
The grid of NMOS tube MN5 electrically connects with the input of phase inverter INV and the grid of the 3rd PMOS MP3, and with bootstrapped switch
Input electrically connects.The drain electrode of the 5th NMOS tube MN5 also drain electrode with the 3rd PMOS MP3 electrically connects.3rd PMOS MP3
Source electrode connects external power source.The source electrode of the 6th NMOS tube MN6 is as the outfan of bootstrapped switch.
It should be understood that the capacitance-voltage conversion circuit of capacitor type MEMS inertial sensor closed loop detection, mainly use electricity
The method of lotus transfer completes the measurement of electric capacity, needs to use multiple switch, for reducing switch drain and switch resistance noise
Impact, and improve the input/output bound of switch, use bootstrapped switch generation negative pressure strictly to close MOS switch, produce height
Voltage in supply voltage opens switch, reduces impedance, increases input range.
Seeing Fig. 1, in an embodiment, the capacitance-voltage conversion circuit of capacitor type MEMS inertial sensor closed loop detection is also
Can be with trim capacitance module 500.The outfan of trim capacitance module 500 and the outfan of capacitor type MEMS inertial sensor 600
Electrical connection.The input of trim capacitance module 500 is connected with external signal equipment.Wherein, trim capacitance module 500 can include
The 9th electric capacity C9 being in parallel and the tenth electric capacity C10.The normal phase input end electrical connection of the 9th electric capacity C9 and the second amplifier A2.The
The inverting input electrical connection of ten electric capacity C10 and the second amplifier A2.Wherein, the trim electric capacity mould of full-bridge is constituted with detection electric capacity
Electric capacity in block 500 is independently adjustable, can detect zero-bit with flexible.
It addition, the detection port of the capacitance-voltage conversion circuit of capacitor type MEMS inertial sensor closed loop detection constitutes full-bridge
Detection, testing circuit uses fully differential structure, it is possible to increase the anti-noise ability of circuit.
Further, sequencing contro during appropriate design capacitance detecting, when driving signal saltus step, capacitance-voltage is turned
Change circuit to reset, eliminate the impact driving signal to detection signal.Concrete, see Fig. 1 and Fig. 2, appearance type MEMS inertia
EM correspondence input EM signal, electric capacity C11 correspondence input drive signal 1, electric capacity C12 correspondence input drive signal 2 in sensor.The
One reset signal is reset signal 1, and the second reset signal is reset signal 2.First reset letter of the first amplification module 200
Number input correspondence input reset signal 1.Second reset signal input correspondence input reset signal of the second amplification module 300
2.The input EMB correspondence input EMB signal of trim capacitance module 500.
As shown in Figure 2, when the level driving signal changes, reset signal resets, and makes driving signal couple
Voltage to detection port does not interferes with detection.Then, after reset terminates, the mass of capacitor type MEMS inertial sensor is made
On pulse signal saltus step, complete electric charge transfer, record the change of variable capacitance.And reset signal 2 terminates in reset signal 1
Terminate again after a period of time, first order low-frequency noise can be stored in the input capacitance of the second level, complete low-frequency noise
Correlated-double-sampling, thus reduce overall noise.Wherein, the first amplification module 200 corresponding storage first order low-frequency noise.Second
Amplification module 300 corresponding storage second level low-frequency noise.
The capacitance-voltage conversion circuit of above-mentioned capacitor type MEMS inertial sensor closed loop detection, it is possible to achieve relatively high dynamic range
Enclose, extremely low noise floor, and to closed loop detect in cross-couplings interference rejection ability, formed IP kernel, be used as high accuracy
The special IC exploitation of capacitor type MEMS inertial sensor.
In suppression influence of noise: first this circuit uses fully differential structure, eliminates the impact of common-mode noise, it is possibility to have
The impact weakening the outside noises such as substrate noise of effect；Then wave chopping technology is used, by twice modulation of useful signal, low-frequency noise
At primary modulation high-frequency signal, then can reduce circuit overall noise by filtering；Additionally amplification reset signal in the second level exists
The first order terminates after amplifying the end a period of time that resets again, and first order low-frequency noise can be stored in the input capacitance of the second level
On, complete the correlated-double-sampling to low-frequency noise, thus reduce overall noise.
Controlling in timing Design: design capacitance-voltage conversion circuit sequential, making this circuit occur at drive pulse signal
Resetting during saltus step, the voltage making driving signal be coupled to detect port does not interferes with detection.Then, after reset terminates, quality is made
Pulse signal saltus step on block, completes electric charge transfer, records the change of variable capacitance.
On bootstrapped switch: the method for capacitance-voltage main circuit electric charge to be used transfer completes the measurement of electric capacity, needs to adopt
Use multiple switch, for reducing switch drain and switch resistance effect of noise, and improve the input/output bound of switch, adopt
By bootstrapped switch generation negative pressure strictly to close MOS switch, produce and switch higher than the voltage unlatching of supply voltage, reduction impedance,
Increase input range.
The foregoing is only preferred embodiment of the present utility model, not in order to limit this utility model, all at this
Any amendment, equivalent and the improvement etc. made within the spirit of utility model and principle, should be included in this utility model
Protection domain within.
Claims (10)
1. the capacitance-voltage conversion circuit of a capacitor type MEMS inertial sensor closed loop detection, it is characterised in that include input
Common-mode feedback module, the first amplification module and the second amplification module；
The described inverting input of input common-mode feedback module and the outfan of capacitor type MEMS inertial sensor and described first
The input electrical connection of amplification module；The feedback output end of described input common-mode feedback module passes with described capacitor type MEMS inertia
The outfan of sensor and the input electrical connection of described first amplification module；The normal phase input end of described input common-mode feedback module
Ground connection；
The outfan of described first amplification module electrically connects with the input of described second amplification module；
Described first amplification module is also connected with the first reset signal input, and described second amplification module also resets with second and believes
Number input connects.
The capacitance-voltage conversion circuit of capacitor type MEMS inertial sensor closed loop the most according to claim 1 detection, it is special
Levying and be, described input common-mode feedback module includes the first amplifier, the first electric capacity C1 and the second electric capacity C2；
The inverting input of described first amplifier two outfans with described capacitor type MEMS inertial sensor respectively are electrically connected
Connect, positive input end grounding；
One end of described first electric capacity C1 connects the outfan of described first amplifier, and the other end electrically connects described capacitor type MEMS
First outfan of inertial sensor and the input of described first amplification module；
One end of described second electric capacity C2 connects the outfan of described first amplifier, and the other end electrically connects described capacitor type MEMS
Second outfan of inertial sensor and the input of described first amplification module.
The capacitance-voltage conversion circuit of capacitor type MEMS inertial sensor closed loop the most according to claim 1 detection, it is special
Levying and be, described first amplification module includes the second amplifier, the 3rd electric capacity C3 and the 4th electric capacity C4；
The inverting input of described second amplifier and normal phase input end are defeated with two of described capacitor type MEMS inertial sensor
Go out end electrical connection；The positive output end of described second amplifier is anti-by described 3rd capacitor C3 and described second amplifier
Phase input electrically connects；The reversed-phase output of described second amplifier is by described 4th capacitor C4 and described second amplifier
Normal phase input end electrical connection；
Described 3rd electric capacity C3 two ends and described 4th electric capacity C4 two ends are the most also connected with the first reset signal input.
The capacitance-voltage conversion circuit of capacitor type MEMS inertial sensor closed loop the most according to claim 3 detection, it is special
Levying and be, described second amplification module includes the 3rd amplifier, the 5th electric capacity C5 and the 6th electric capacity C6；
The positive output end of described 3rd amplifier is by the inverting input of described 5th electric capacity C5 with described 3rd amplifier
Electrical connection；The reversed-phase output of described 3rd amplifier is inputted by the positive of described 6th electric capacity C6 with described 3rd amplifier
End electrical connection；
Described 5th electric capacity C5 two ends and described 6th electric capacity C6 two ends are the most also connected with the second reset signal input.
The capacitance-voltage conversion circuit of capacitor type MEMS inertial sensor closed loop the most according to claim 4 detection, it is special
Levying and be, described second amplification module also includes the 7th electric capacity C7 and the 8th electric capacity C8；The anti-phase input of described 3rd amplifier
End is electrically connected with the positive output end of described second amplifier by described 7th electric capacity C7；The positive of described 3rd amplifier is defeated
Enter end to be electrically connected with the reversed-phase output of described second amplifier by described 8th electric capacity C8.
The capacitance-voltage conversion circuit of capacitor type MEMS inertial sensor closed loop the most according to claim 1 detection, it is special
Levy and be, also include copped wave module；The input of described copped wave module and the outfan of described capacitor type MEMS inertial sensor
Electrical connection；The input of the outfan of described copped wave module and described input common-mode feedback module and described first amplification module
Input electrically connects.
The capacitance-voltage conversion circuit of capacitor type MEMS inertial sensor closed loop the most according to claim 6 detection, it is special
Levying and be, described copped wave module includes multiple bootstrapped switch；The control signal end of each described bootstrapped switch controls letter with external
Number electrical connection；The input/output terminal of each described bootstrapped switch respectively with the outfan and of capacitor type MEMS inertial sensor
The input electrical connection of one amplification module.
The capacitance-voltage conversion circuit of capacitor type MEMS inertial sensor closed loop the most according to claim 7 detection, it is special
Levying and be, described bootstrapped switch includes the first NMOS tube, the second NMOS tube, the 3rd NMOS tube, the 4th NMOS tube, the 5th NMOS tube
MN5, the 6th NMOS tube, the first PMOS, the second PMOS, the 3rd PMOS, the 11st electric capacity C11 and phase inverter INV；
The source electrode of described first NMOS tube and first end of described 11st electric capacity C11, the drain electrode of described 4th NMOS tube and institute
State the source electrode electrical connection of the 5th NMOS tube；The grid of described first NMOS tube and the grid of described first PMOS, described second
The grid of the grid of PMOS, the drain electrode of described second PMOS and described 6th NMOS tube connects；Described first NMOS tube
Drain electrode is connected with the drain electrode of described 6th NMOS tube, and electrically connects with the input of described bootstrapped switch；
The source electrode of described first PMOS connects external power source, and the drain electrode of described first PMOS is with described 11st electric capacity C11's
Second end electrical connection；
The source electrode of described second PMOS electrically connects with second end of described 11st electric capacity C11；The leakage of described second PMOS
Pole also drain electrode with described second NMOS tube electrically connects；The grid of described second PMOS also with the drain electrode of described 3rd PMOS
Drain electrode with described second NMOS tube electrically connects；
The grid of described second NMOS tube is connected with external power source, the source electrode of described second NMOS tube and described 3rd NMOS tube
Drain electrode electrical connection；
The grid of described 3rd NMOS tube electrically connects with the grid of described 4th NMOS tube and the outfan of described phase inverter INV,
The source ground of described 3rd NMOS tube；
The grid of described 4th NMOS tube also outfan with described phase inverter electrically connects, and the source electrode of described 4th NMOS tube connects
Ground, the drain electrode of described 4th NMOS tube also source electrode with described 5th NMOS tube electrically connects；
The grid of described 5th NMOS tube electrically connects with the grid of the input of described phase inverter INV and described 3rd PMOS,
And electrically connect with the input of described bootstrapped switch；The drain electrode of described 5th NMOS tube is also electric with the drain electrode of described 3rd PMOS
Connect；
The source electrode of described 3rd PMOS connects external power source；
The source electrode of described 6th NMOS tube is as the outfan of described bootstrapped switch.
The capacitance-voltage conversion circuit of capacitor type MEMS inertial sensor closed loop the most according to claim 1 detection, it is special
Levy and be, also include trim capacitance module；The outfan of described trim capacitance module and described capacitor type MEMS inertial sensor
Outfan electrical connection；The input of described trim capacitance module is connected with external signal equipment.
The capacitance-voltage conversion circuit of capacitor type MEMS inertial sensor closed loop the most according to claim 9 detection, it is special
Levying and be, described trim capacitance module includes the 9th electric capacity C9 and the tenth electric capacity C10 being in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620748398.1U CN205843679U (en) | 2016-07-15 | 2016-07-15 | The capacitance-voltage conversion circuit of capacitor type MEMS inertial sensor closed loop detection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620748398.1U CN205843679U (en) | 2016-07-15 | 2016-07-15 | The capacitance-voltage conversion circuit of capacitor type MEMS inertial sensor closed loop detection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205843679U true CN205843679U (en) | 2016-12-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620748398.1U Active CN205843679U (en) | 2016-07-15 | 2016-07-15 | The capacitance-voltage conversion circuit of capacitor type MEMS inertial sensor closed loop detection |
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| Country | Link |
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| CN (1) | CN205843679U (en) |
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2016
- 2016-07-15 CN CN201620748398.1U patent/CN205843679U/en active Active
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