CN205810827U - A kind of contactless preparation system for crystal-silicon solar cell grid line - Google Patents
A kind of contactless preparation system for crystal-silicon solar cell grid line Download PDFInfo
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- CN205810827U CN205810827U CN201620669200.0U CN201620669200U CN205810827U CN 205810827 U CN205810827 U CN 205810827U CN 201620669200 U CN201620669200 U CN 201620669200U CN 205810827 U CN205810827 U CN 205810827U
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 79
- 239000010703 silicon Substances 0.000 title claims abstract description 78
- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 57
- 239000013078 crystal Substances 0.000 claims abstract description 52
- 238000007641 inkjet printing Methods 0.000 claims abstract description 48
- 238000010438 heat treatment Methods 0.000 claims abstract description 25
- 239000007921 spray Substances 0.000 claims abstract description 23
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 238000007639 printing Methods 0.000 claims description 17
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000012634 fragment Substances 0.000 abstract description 3
- 238000013467 fragmentation Methods 0.000 abstract description 2
- 238000006062 fragmentation reaction Methods 0.000 abstract description 2
- 238000005389 semiconductor device fabrication Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000002105 nanoparticle Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000002209 hydrophobic effect Effects 0.000 description 5
- 238000007689 inspection Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 206010019133 Hangover Diseases 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920005596 polymer binder Polymers 0.000 description 2
- 239000002491 polymer binding agent Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000001291 vacuum drying Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/0041—Digital printing on surfaces other than ordinary paper
- B41M5/0047—Digital printing on surfaces other than ordinary paper by ink-jet printing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
This utility model provides a kind of contactless preparation system for crystal-silicon solar cell grid line, belongs to crystal-silicon solar cell field.This contactless preparation system being used for crystal-silicon solar cell grid line includes ink jet printing head and heating plate；Described ink jet printing head is provided with spray orifice；Crystal silicon chip is placed on described heating plate；Described shower nozzle be arranged in parallel with the grid line on crystal silicon chip, and the often row spray orifice on shower nozzle is all parallel with the grid line on crystal silicon chip；Ink-jet ink oozes formation ink droplet from described spray orifice, prints each layer grid line on crystal silicon chip successively, forms grid line structure.This utility model uses this contactless semiconductor device fabrication mode of inkjet printing, efficiently avoid the mode of the fragmentation situation causing crystal silicon chip because of contact, significantly reduces fragment rate, hence it is evident that reduce manufacturing cost.
Description
Technical field
This utility model belongs to crystal-silicon solar cell field, is specifically related to a kind of for crystal-silicon solar cell grid line
Contactless preparation system.
Background technology
Crystal-silicon solar cell comprises p-type and the N-type diffusion region forming knot, and junctional area forms P-N junction.When light is irradiated to
During surface of crystalline silicon, a part of photon is absorbed by crystalline silicon material, and the energy of photon passes to silicon atom, makes electronics jump
Move, become free electron and assemble in P-N junction both sides, producing potential difference.When circuit is connected in outside, in the effect of this voltage
Under, produce certain output by there being electric current to flow through external circuit.Traditional crystal-silicon solar cell metal coating technique is led to
Often completed by screen printing technique, formation circuit will be stamped on silicon chip through screen mesh by the electrocondution slurry containing metal
Or electrode.The typical the most whole technological process of production of crystal silicon solar energy battery needs carry out repeatedly silk screen printing step
Suddenly.Screen printing apparatus is simple and convenient to operate, strong adaptability, is widely applied in solar cell makes.
But silk-screen printing technique is a kind of typical contact preparation method, needs and base material list in preparation process aperture plate
Crystal silicon chip or polysilicon chip are in close contact.Owing to preparing that the silica-based thickness of crystal-silicon solar cell is the least, crystalline silicon this
The factors such as the hardness of body is big, fragility is big, easily cause crystal silicon chip to crush, it is difficult to control preparation cost.Meanwhile, the grid on half tone
Ruling width is typically between 60-80um.And conductive silver paste can increased than the width on silk-screen plate after printing, the silver after printing
Slurry width after sintering is between 80-100um.But owing to the grid line width after printing is typically at 15-20um, cause series electrical
Resistance is relatively big, limits the photoelectric transformation efficiency of crystal-silicon solar cell.
Utility model content
The purpose of this utility model is to solve a difficult problem present in above-mentioned prior art, it is provided that one is for crystalline silicon too
The contactless preparation system of positive electricity pond grid line, is incorporated into crystal-silicon solar cell grid line manufacture process by inkjet technology
In, substituting traditional silk-screened preparation technology, the fragment rate solving solar cell preparation process is high, and the depth-width ratio of grid line is low, light
The technological deficiencies such as electricity transformation efficiency is not enough.
This utility model is achieved through the following technical solutions:
A kind of contactless preparation system for crystal-silicon solar cell grid line, including ink jet printing head and heating
Sheet；
Described ink jet printing head is provided with spray orifice；
Crystal silicon chip is placed on described heating plate；
Described shower nozzle be arranged in parallel with the grid line on crystal silicon chip, the often row spray orifice on shower nozzle all with the grid on crystal silicon chip
Line is parallel；
Ink-jet ink oozes formation ink droplet from described spray orifice, prints each layer grid line on crystal silicon chip successively, forms grid
Line structure.
Described ink jet printing head uses piezoelectric type printing head；Described ink droplet is nanometer conductive material；Described spray orifice
The width of the grid line being smaller in size than on crystal silicon chip.
Described heating plate is arranged on a mobile station, and mobile station can be with ink jet printing head generation relative movement；Described add
The heating temperature range of backing is 30～200 degrees Celsius.
Utilize that the described contactless preparation system for crystal-silicon solar cell grid line realizes for the crystalline silicon sun
The contactless preparation method of battery grid line, described method includes:
(1), the dot array data needed for ink jet printing head is designed according to the size of crystal silicon chip；
(2), adjust ink jet printing head parameter, under conditions of the operating frequency meeting shower nozzle is the highest, make spray
The ink droplet that hole is ejected is mellow and full smooth, and without hangover form and satellite droplet, and the size of ink droplet is the least；
(3), to crystal silicon chip carry out prepress treatment, increase the hydrophobicity of crystal silicon chip；
(4), crystal silicon chip is preheated；
(5), ink jet printing head work, ink-jet ink is deposited on crystal silicon chip；
(6), low temperature precuring, formed nano-particle composition grid line: the heat by crystal silicon chip makes the alcohol in ink
Class material volatilizees, and makes polymer binder decompose, burn, and forms the grid line of nano-particle composition；
(7), hot setting, formed conduction grid line.
(8), the finished product effect of inspection inkjet printing: the effect of the grid line of inspection inkjet printing, rejecting substandard product.
Described step (1) is achieved in that
The grid line figure of the size design inkjet printing according to crystal silicon chip, adjust required inkjet printing ratio,
Position and gray scale, generate the dot array data needed for ink jet printing head.
Described step (2) is achieved in that
Density, viscosity and surface tension these three parameter according to ink-jet ink, adjusts the parameter of ink jet printing head, institute
The parameter stating ink jet printing head includes the interval between the pulse amplitude of driving voltage, pulse duration, impulse waveform.
Described step (3) is achieved in that
Crystal silicon chip is carried out hydrophobic treatment, after hydrophobic treatment, contacting of the top layer silicon dioxide of ink droplet and crystal silicon chip
Angle is less than 80 degree.
Described step (4) is achieved in that
Being positioned on heating plate by crystal silicon chip and preheat, heating-up temperature is 75～85 degrees Celsius.
Described step (5) is achieved in that
Crystal silicon chip is at the uniform velocity by the lower section of ink jet printing head, and ink jet printing head works, by ink-jet ink by step
(1) dot array data obtained requires to deposit on crystal silicon chip；
For ensureing that grid line has bigger depth-width ratio, the same position on crystal silicon chip needs to print and repeatedly forms lamination knot
Structure, just can meet the requirement of grid line structure；
Same position on crystal silicon chip needs the computing formula repeating the number of times of inkjet printing as follows:
Described step (7) is achieved in that
Crystal silicon chip being put into vacuum drying oven heat, heating-up temperature is 250-300 degree Celsius, makes nano-particle melt
Change, form conduction grid line.
Compared with prior art, the beneficial effects of the utility model are: this utility model uses that inkjet printing is this non-to be connect
The semiconductor device fabrication mode of touch, efficiently avoid the mode of the fragmentation situation causing crystal silicon chip because of contact, has
Reduce fragment rate to effect, hence it is evident that reduce manufacturing cost.Additionally, inkjet technology is also a kind of typical material that increases manufactures skill
Art, is possible not only to reduce the width of grid line, improves moire grids density, it is also possible to by successively adding by high-precision inkjet printing
Work, the processing mode being layering promote the height of grid line, promote depth-width ratio, reduce series resistance, promote the light of solar cell
Electricity transformation efficiency.Moreover, InkJet printing processes is simple, easily realizes, and energy consumption is low, pollutes few, and beneficially photovoltaic enterprise reduces fortune
Battalion's cost.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of this utility model preparation method.
Fig. 2 is the schematic diagram that this utility model prepares solar cell grid line.
In figure: 1 is ink jet printing head, 2 is spray orifice, and 3 is ink droplet (nanometer conductive material), and 4 is the grid line printing preparation
Top layer, 5 is the grid line second layer printing preparation, and 6 is the grid line third layer printing preparation, and 7 prepare grid line structure for printing, and 8 are
Crystal silicon chip, 9 is heating plate.
Detailed description of the invention
Below in conjunction with the accompanying drawings this utility model is described in further detail:
System of the present utility model as in figure 2 it is shown, include ink jet printing head 1 (piezoelectric type printing head can be used, its
Being divided into printing head and " print on demand type " shower nozzle two class of " continuous ", what market was commonly used is " print on demand " shower nozzle；Mesh
The KM series shower nozzle having Konica company conventional on front market, XJ system class shower nozzle that Xaar company produces etc., Spectra is public
The SE system class shower nozzle of department, and a variety of shower nozzles of other brand.) and heating plate 9 (heating plate can directly buy finished product, also
Resistance wire can be used to add a temperature sensor be made；Material mainly uses aluminum, because the specific heat of aluminum is big, and heat insulating ability
Good, material wants thickness a bit, and uniformly, heating temperature range is at 30～200 degrees Celsius in heat transfer), at described ink jet printing head
On be provided with spray orifice 2 (every a line spray orifice 2 be all parallel with grid line, the most just can keep efficiency and accuracy, may on a shower nozzle
There is a line spray orifice, it is also possible to have multirow spray orifice, in order to accurately, be typically chosen 2 row, 2 row contained above, select the most complete of a line
Can), ink droplet 3 (nanometer conductive material) oozes from spray orifice, prints the grid line top layer 4 of preparation successively, beat on crystal silicon chip 8
Printing the standby grid line second layer 5, print the grid line third layer 6 of preparation, grid line structure 7 is prepared in printing.
(distance between adjacent two spray orifices is according to shower nozzle for the grid line width that is smaller in size than of the spray orifice of ink jet printing head
Kind and different, general range is 25～75um)；
Putting and grid line keeping parallelism of shower nozzle.
Crystal silicon chip 8 is directly placed on heating plate 9.
Distance between ink jet printing head 1 and heating plate 9 is not had particular requirement, general technology can control at 2mm
Within.
The inside of heating plate is resistance wire, and outside is aluminum, conducts heat from inside to outside.
As it is shown in figure 1, using method of the present utility model comprises the steps of
(1), the dot array data needed for ink jet printing head is generated；
(2) parameter of ink jet printing head, is adjusted；
(3), crystal silicon chip carries out prepress treatment；
(4), crystal silicon chip preheats；
(5), ink jet printing head work, ink is deposited on crystal silicon chip；
(6), low temperature precuring, formed nano-particle composition grid line；
(7), hot setting, formed conduction grid line.
(8), the finished product effect of the solar cell of inspection inkjet printing.
For ensureing that the crystal-silicon solar cell grid line that inkjet printing is prepared has bigger depth-width ratio, same position may
Need to print and repeatedly form laminated construction.The different ink-jet printing times of the same position of crystal silicon chip and the content of nano material ink
(also referred to as concentration) inversely.Content is the highest, and the number of times of inkjet printing is the fewest, and vice versa.Same point needs to repeat ink-jet
The number of times computing formula printed is as follows:
Use step of the present utility model is specific as follows:
(1), according to the grid line figure (grid of the size design inkjet printing of the solar cell crystal silicon chip of required processing
The form of line is fixing, is except for the difference that slightly different in the width of grid line, interval, quantity, and this can be according to the essence of equipment
Degree adjusts.), (model of silicon chip is a lot, has 80mm* at present to adjust the required ratio of inkjet printing, position and gray scale
80mm, 125mm*125mm, 156mm*156mm and other size a variety of, this ratio being accomplished by adjusting printing curve
Example, position, certainly it is also required to adjust gray scale, gray scale directly determines the height of grid line, and gray scale the highest grid line height is the biggest, and ratio is put
Big, but the depth-width ratio of grid line is constant, because width is always maintained at a pixel width, so needing to strengthen gray scale, keeps high wide
Ratio is constant.).Through image processing algorithm, (using print data arrangement algorithm, " large format is color to refer to document: Liu Zhijun
Color ink-jet drawing machine controller is studied " Xian Electronics Science and Technology University, 2007), generate the dot matrix number needed for ink jet printing head 1
According to.
(2) density, viscosity and the surface tension these three parameter, according to measured ink-jet ink, beats by adjusting ink-jet
Parameter (the mainly ginseng such as the interval between the pulse amplitude of the driving voltage of shower nozzle, pulse duration, impulse waveform of print shower nozzle 1
Number information), under conditions of meeting the operating frequency of shower nozzle height most probably, the ink droplet 3 making spray orifice 2 eject is mellow and full smooth,
Without substantially hangover form and satellite droplet, and the size of ink droplet 3 is the least.
(3), increase crystal silicon chip hydrophobicity (to carry out hydrophobic treatment by plasma machine, deposit on the surface of crystal silicon chip
One layer of hydrophobic membrane, as fluorinated material or simple alkyl chain water-repelling agent can), after hydrophobic treatment, ink is at crystal silicon chip 8
The contact angle of top layer silicon dioxide is less than 80 degree.
(4), by crystal silicon chip 8 it is positioned on heating plate 9 and preheats, heating-up temperature 80 degrees centigrade (75～85
Degree Celsius).Pre-heating temperature is difficult to the highest, and the alcohols otherwise dropping in ink droplet 3 on crystal silicon chip 9 in subsequent step can be fast
Speed boiling, affects solidification effect.
(5), crystal silicon chip 8 at the uniform velocity by below ink jet printing head, ink jet printing head 1 works, by nanometer material ink
Water deposits on crystal silicon chip 8 by dot array data requirement, meanwhile, for ensureing the crystal-silicon solar cell grid that inkjet printing is prepared
Line has bigger depth-width ratio, and same position may need to print repeatedly, just can meet printing and prepare grid line structure 7 (printing system
Standby grid line structure 7 is the general name to all grid line structures, and Fig. 2 is a schematic diagram, and 4,5,6 finally all become the part of 7)
Requirement.Printing is prepared grid line structure and is printed the grid line third layer 6 of preparation, the grid line second layer 5 of preparation, system the most successively
Standby grid line top layer 4.
Shower nozzle and heating plate are relative movements, can be placed on by heating plate in a mobile station, according to actual feelings
Condition, mobile station can design and existing laterally move left and right and have longitudinal movable function, or be designed to only laterally left
Move right the mobile station of function.If use the situation that multiple shower nozzle works simultaneously, after having printed multirow, avoid the need for longitudinal direction
Mobile heating plate, prints next line, so only laterally moves left and right the mobile station of function after only need to returning in situ
Meeting requirement, if shower nozzle is not enough, after having printed a line, it is necessary to longitudinally move heating plate, this is accomplished by can either be laterally left
The mobile station moved right and can longitudinally move forward and backward.
(6), alcohols material in ink is made to volatilize rapidly by the heat of crystal silicon chip, and make polymer binder decompose,
Burn, form the grid line of nano-particle composition.
(7), hot setting.Crystal silicon chip being put into vacuum drying oven heat, heating-up temperature is 250-300 degree Celsius,
Make nano-particle melt, form conduction grid line.Heating-up temperature should not be the highest, otherwise can affect surface of crystalline silicon structure.
(8), inspection inkjet printing crystal-silicon solar cell grid line effect, reject substandard product.
Further, below by concrete numerical value, the present embodiment is described further:
Silicon chip selects the crystal silicon chip of 125mm*125mm, sprinkler selection 14pL characteristic shower nozzle, and shower nozzle contains 128 spray orifices,
The silver content of ink is 23%, and target grid line height is 25um, grid line width 45um.For realizing this embodiment, need to be to shower nozzle
These parameters of interval between the pulse amplitude of driving voltage, pulse duration, impulse waveform are adjusted, by ink drop size control
Near 10pL.Same point needs the number of times computing formula repeating inkjet printing as follows:
Being calculated by above formula, same point different ink-jet printing times is 61 times, the half of the most total orifice number, therefore allows spray
Span work can realize this embodiment.
Technique scheme is a kind of embodiment of the present utility model, for those skilled in the art,
On the basis of the utility model discloses principle, it is easy to make various types of improvement or deformation, be not limited solely to this reality
By the structure described by novel above-mentioned specific embodiment, the most previously described the most preferred, and the most restrictive
Meaning.
Claims (6)
1. the contactless preparation system for crystal-silicon solar cell grid line, it is characterised in that: described for crystalline silicon
The contactless preparation system of solar cell grid line includes ink jet printing head and heating plate；
Described ink jet printing head is provided with spray orifice；
Crystal silicon chip is placed on described heating plate；
Described shower nozzle be arranged in parallel with the grid line on crystal silicon chip, and the often row spray orifice on shower nozzle is all put down with the grid line on crystal silicon chip
OK；
Ink-jet ink oozes formation ink droplet from described spray orifice, prints each layer grid line on crystal silicon chip successively, forms grid line knot
Structure.
Contactless preparation system for crystal-silicon solar cell grid line the most according to claim 1, it is characterised in that:
Described ink jet printing head uses piezoelectric type printing head.
Contactless preparation system for crystal-silicon solar cell grid line the most according to claim 2, it is characterised in that:
Described ink droplet is nanometer conductive material.
Contactless preparation system for crystal-silicon solar cell grid line the most according to claim 3, it is characterised in that:
The width of the grid line being smaller in size than on crystal silicon chip of described spray orifice.
5., according to the arbitrary described contactless preparation system for crystal-silicon solar cell grid line of Claims 1-4, it is special
Levy and be: described heating plate is arranged on a mobile station, and mobile station can be with ink jet printing head generation relative movement.
Contactless preparation system for crystal-silicon solar cell grid line the most according to claim 5, it is characterised in that:
The heating temperature range of described heating plate is 30～200 degrees Celsius.
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| CN201510856392 | 2015-12-01 | ||
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| CN205810827U true CN205810827U (en) | 2016-12-14 |
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| CN201610489645.5A Pending CN106816483A (en) | 2015-12-01 | 2016-06-27 | A kind of contactless preparation system and method for crystal-silicon solar cell grid line |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106816483A (en) * | 2015-12-01 | 2017-06-09 | 天津斯沃姆科技发展有限公司 | A kind of contactless preparation system and method for crystal-silicon solar cell grid line |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP7149768B2 (en) * | 2018-08-20 | 2022-10-07 | 株式会社Ｓｃｒｅｅｎホールディングス | Printing method and printing device |
| CN111509085A (en) * | 2020-04-02 | 2020-08-07 | 西安宏星电子浆料科技股份有限公司 | Spraying system for preparing ultra-high-efficiency solar cell electrode and application thereof |
| CN115008898B (en) * | 2022-06-24 | 2023-10-24 | 安徽华晟新能源科技有限公司 | Ink jet printing apparatus and method of ink jet printing pattern layer |
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| CN102263164A (en) * | 2011-07-06 | 2011-11-30 | 杨雪 | Manufacturing technology for contact alloying of meal-semiconductor of silicon solar battery |
| CN103824897B (en) * | 2014-02-13 | 2016-05-18 | 中国电子科技集团公司第四十八研究所 | A kind of crystal silicon battery squash type is prepared ultra-fine auxiliary grid device |
| CN103956407B (en) * | 2014-04-23 | 2017-06-06 | 中国科学院物理研究所 | Prepare the method and ink-jet printer of perovskite-based thin film solar cell |
| CN104124306B (en) * | 2014-07-11 | 2016-05-18 | 中国电子科技集团公司第四十八研究所 | Inkjet printing is prepared connecting gear and the preparation method of the ultra-fine gate electrode of photovoltaic cell |
| CN205810827U (en) * | 2015-12-01 | 2016-12-14 | 天津斯沃姆科技发展有限公司 | A kind of contactless preparation system for crystal-silicon solar cell grid line |
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| CN106816483A (en) * | 2015-12-01 | 2017-06-09 | 天津斯沃姆科技发展有限公司 | A kind of contactless preparation system and method for crystal-silicon solar cell grid line |
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