CN205790065U - 一种仿流明光源 - Google Patents
一种仿流明光源 Download PDFInfo
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- CN205790065U CN205790065U CN201620523410.9U CN201620523410U CN205790065U CN 205790065 U CN205790065 U CN 205790065U CN 201620523410 U CN201620523410 U CN 201620523410U CN 205790065 U CN205790065 U CN 205790065U
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- luminescence chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
本实用新型涉及照明技术领域,尤其涉及一种仿流明光源。包括支架、穿插于所述支架的导热柱、固定于所述导热柱顶部的发光芯片组、覆盖于所述发光芯片组上的荧光胶、与发光芯片组电性连接的正极插片和负极插片、以及罩设在所述支架上的硅胶,所述发光芯片组中,相邻发光芯片之间的间距相等。使得发光芯片之间的出光效率得到提高,使得光源一致性高、混光效果好。
Description
技术领域
本实用新型涉及照明技术领域,尤其涉及一种仿流明光源。
背景技术
目前市场上仿流明光源,光效率不够高,且因为芯片发出的光本身波长之间的误差,造成成品灯与灯之间、同一颗灯的各个区域的颜色有差异,即光源的一致性低、混光效果不好。
实用新型内容
本实用新型所要解决的技术问题是提供一种高光效的仿流明光源。
本实用新型是这样实现的:
一种仿流明光源,包括支架、穿插于所述支架的导热柱、固定于所述导热柱顶部的若干发光芯片、覆盖于所述发光芯片组上的荧光胶、与所述发光芯片组电性连接的正极插片和负极插片、以及罩设在所述支架上的硅胶,所述发光芯片包括若干排发光芯片组,所述发光芯片组呈纵向等间距相互平行设置,每一排发光芯片组包括若干横向等间距分布的发光芯片。
进一步地,所述发光芯片呈蜂窝状排列。
进一步地,所述发光芯片组由若干组串联的发光芯片并联组成。
进一步地,所述导热柱的顶部设有若干凹槽,所述发光芯片设在所述凹槽中。
进一步地,所述凹槽呈蜂窝状排列。
进一步地,所述发光芯片为LED芯片。
进一步地,所述发光芯片与所述正极插片和负极插片通过金丝连接。
进一步地,所述光源的驱动电压为8.2-8.6V,电流为120ma。
本实用新型与现有技术相比,有益效果在于:发光芯片之间排列均匀,使得发光芯片之间的出光效率得到提高,另外,发光芯片之间发出的光相互混合,可以更好地提高出光效果,使得涂覆在发光芯片组表面的荧光胶出光均匀,从而使得光源一致性高、混光效果好。
附图说明
图1:本实用新型实施例的结构示意图;
图2:图1实施例中A-A剖面结构示意图。
图中:1-支架 2-导热柱 21-凹槽 3-发光芯片组 31-发光芯片 4-荧光胶 5-正极插片 6-负极插片 7-硅胶 8-金线
具体实施方式
为了使本实用新型的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本实用新型进行进一步详细说明。
如图1和图2所示,为本实用新型一较佳实施例,一种仿流明光源,包括支架1、穿插于支架1的导热柱2、固定于导热柱2顶部的若干发光芯片31、覆盖于发光芯片31上的荧光胶4、与发光芯片31电性连接的正极插片5和负极插片6、以及罩设在支架1上的硅胶7,发光芯片31包括若干排发光芯片组3,发光芯片组3呈纵向等间距相互平行设置,每一排发光芯片组3包括若干横向等间距分布的发光芯片31。
发光芯片31之间排列均匀,使得发光芯片31之间的出光效率得到提高,另外,发光芯片31之间发出的光相互混合,可以更好地提高出光效果,使得涂覆在发光芯片组3表面的荧光胶4出光均匀,从而使得光源一致性高、混光效果好。
具体地,发光芯片31呈蜂窝状排列。发光芯片组3由若干组串联的发光芯片31并联组成。发光芯片31为LED芯片。发光芯片31与正极插片5和负极插片6通过金丝8连接。
由于电流在传输的过程有损失,主要以热量的形式散发,而且大小与电流的平方成正比,在相同条件下高电压小电流比低电压大电流的损失小,产生的热量也比较低。该光源在使用中,驱动电压为8.2-8.6V,电流为120ma,减小了电流热损耗,降低了产品热量。
另一实施例中,导热柱2的顶部设有若干凹槽21,发光芯片31设在凹槽21中,减少侧光的发散,提升出光效果。凹槽21呈蜂窝状排列,便于发光芯片31的间距控制。
以上所述仅为本实用新型的较佳实施例而已,并不用以限制本实用新型,凡在本实用新型的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本实用新型的保护范围之内。
Claims (8)
1.一种仿流明光源,包括支架、穿插于所述支架的导热柱、固定于所述导热柱顶部的若干发光芯片、覆盖于所述发光芯片组上的荧光胶、与所述发光芯片组电性连接的正极插片和负极插片、以及罩设在所述支架上的硅胶,其特征在于:所述发光芯片包括若干排发光芯片组,所述发光芯片组呈纵向等间距相互平行设置,每一排发光芯片组包括若干横向等间距分布的发光芯片。
2.根据权利要求1所述的一种仿流明光源,其特征在于:所述发光芯片呈蜂窝状排列。
3.根据权利要求1所述的一种仿流明光源,其特征在于:所述发光芯片组由若干组串联的发光芯片并联组成。
4.根据权利要求1所述的一种仿流明光源,其特征在于:所述导热柱的顶部设有若干凹槽,所述发光芯片设在所述凹槽中。
5.根据权利要求4所述的一种仿流明光源,其特征在于:所述凹槽呈蜂窝状排列。
6.根据权利要求1所述的一种仿流明光源,其特征在于:所述发光芯片为LED芯片。
7.根据权利要求1所述的一种仿流明光源,其特征在于:所述发光芯片与所述正极插片和负极插片通过金丝连接。
8.根据权利要求1所述的一种仿流明光源,其特征在于:所述光源的驱动电压为8.2-8.6V,电流为120ma。
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CN201620523410.9U CN205790065U (zh) | 2016-06-01 | 2016-06-01 | 一种仿流明光源 |
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CN201620523410.9U CN205790065U (zh) | 2016-06-01 | 2016-06-01 | 一种仿流明光源 |
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