CN205789637U - A kind of thin film switch - Google Patents
A kind of thin film switch Download PDFInfo
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- CN205789637U CN205789637U CN201620740311.6U CN201620740311U CN205789637U CN 205789637 U CN205789637 U CN 205789637U CN 201620740311 U CN201620740311 U CN 201620740311U CN 205789637 U CN205789637 U CN 205789637U
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- sealing coat
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Abstract
The utility model discloses a kind of thin film switch, including upper thin layer, lower thin layer, upper conductive layer and lower conductiving layer, described upper conductive layer and lower conductiving layer are separately positioned on below thin layer and lower thereon, described upper conductive layer and lower conductiving layer are respectively arranged with corresponding upper key mapping and lower key mapping, upper thin layer and the upper conductive layer of described upper key mapping neighboring are coated with sealing coat, lower thin layer and the lower conductiving layer of described lower key mapping neighboring are coated with lower sealing coat, the thickness sum of described upper sealing coat and lower sealing coat is more than upper conductive layer and the thickness sum of lower conductiving layer, described upper sealing coat the most at least includes small one and large one annular or is at least made up of similar two annular sealing coats an arc with lower sealing coat, wherein, little sealing coat is set in big sealing coat.This utility model assembling para-position requires low, and simple and convenient assembly is quick, and safety is high, and dependable performance, the life-span is long.
Description
Technical field
This utility model belongs to field of switches, more particularly to a kind of thin film switch.
Background technology
Thin film switch is also known as touch key, and it has, and volume is little, lightweight, simple to operate, production cost is low, service life
The advantages such as length, are widely used in intelligent electronic instrument, Medical Instruments, Digit Control Machine Tool, communication apparatus, office appliance, household electrical appliances, electricity
In the various products such as brain keyboard.
The structure of existing thin film switch is usually: upper thin layer, lower thin layer, upper thin layer is by connection below key mapping
Having upper conductive layer, the correspondence position of lower thereon connects has lower conductiving layer, the neighboring of upper conductive layer to be provided with sealing coat,
The neighboring of lower conductiving layer is provided with lower sealing coat, and the thickness of upper sealing coat is more than upper conductive layer, under the thickness of lower sealing coat is more than
Conductive layer；By finger by press thin layer button make upper conductive layer and lower conductiving layer contact realization conducting, finger decontrol after,
Owing to upper and lower sealing coat effect makes upper conductive layer and lower conductiving layer disengage and disconnect, play the effect of switch, such as publication:
CN201527921U.But its upper and lower sealing coat is the single ring architecture using UV ink printing, its loop wire is general the thinnest, in group
During dress, the bad para-position of upper and lower sealing coat, the dislocation of upper and lower sealing coat causes isolating thickness and only has 0.04-0.05mm, and upper and lower key mapping is held
Yi Yin deforms and is bonded together, and causes isolation effect to lose efficacy, and operation requires height, and efficiency is low, and the circuit of upper and lower conductive layers is walked
Node and exposed lead-in wire that line intersects do not carry out insulation protection, and safety and reliability is poor.
Summary of the invention
This utility model purpose is to provide a kind of assembling para-position requirement low for solution is above-mentioned for topic, and packaging technology is easy
Quickly, safety is high, dependable performance, the thin film switch of life-span length.
To this end, the utility model discloses a kind of thin film switch, including upper thin layer, lower thin layer, upper conductive layer and under
Conductive layer, described upper conductive layer is arranged on below thin layer, and described lower conductiving layer is arranged on lower thereon, described on lead
Electric layer and lower conductiving layer are respectively arranged with corresponding upper key mapping and lower key mapping, the upper thin layer of described upper key mapping neighboring and upper
Conductive layer is coated with sealing coat, and lower thin layer and the lower conductiving layer of described lower key mapping neighboring are coated with lower sealing coat, described
Upper sealing coat and lower sealing coat by being covered in glue layer symmetry thereon and fit and formed a bed course, described upper sealing coat and
The thickness sum of lower sealing coat is more than upper conductive layer and the thickness sum of lower conductiving layer, and described upper sealing coat and lower sealing coat are the most extremely
Including small one and large one annular less or be at least made up of similar two annular sealing coats an arc, wherein, little sealing coat is sheathed
In big sealing coat, the periphery of thin film switch fits in one also through glue layer.
Further, described little sealing coat and big sealing coat tool are at regular intervals, are provided with some connecting keys in described spacing
Connect little sealing coat and big sealing coat.
Further, the thickness of described upper sealing coat and lower sealing coat is 0.04-0.05mm, encloses in described upper sealing coat
The distance enclosing lower key mapping peripheral in the distance of upper key mapping periphery and lower sealing coat is 1.7-2.0mm.
Further, described upper key mapping and lower key mapping are made up of a plurality of spaced conductor wire respectively, described upper key mapping
Conductor wire arranged in a crossed manner with the conductor wire of lower key mapping, present latticed after fitting together.
Further, it is respectively equipped with some upper insulation points in the region of described upper key mapping and lower key mapping and lower insulation is little
Point.
Further, described upper insulation point and lower insulation point are cylindrical, and upper insulation point and lower insulation are little
A diameter of 0.6-0.8mm of point, thickness is 0.04-0.05mm, spacing between upper insulation point each point and lower insulation point it
Between spacing be 3-6mm.
Further, between upper and lower conductive layers, bonded by gelatine layer in non-key mapping region.
Further, the node that the circuit trace of upper and lower conductive layers is intersected is disposed with insulating oil, and exposed draws
Line also prints insulating oil and protects.
Further, described lower thin layer is provided below primer layer.
Advantageous Effects of the present utility model:
Upper sealing coat of the present utility model and lower sealing coat the most at least include small one and large one annular or at least by a camber line
Section constitutes two sealing coats of similar annular, and wherein, little sealing coat is set in big sealing coat so that upper sealing coat and lower sealing coat
Layer wall broaden, the sealing coat of double-ring reaches 2mm when assembling up and down to assembling fault-tolerant dislocation deviation of being permitted, and usually assembles
Lower off-course deviation is at about 0.5-1mm, and assembling para-position is easy, and simple and convenient assembly is quick, reduction manufacturing cost, and upper and lower conductive layers
Node and exposed lead-in wire insulating oil that circuit trace is intersected carry out insulation protection, and safety is high, dependable performance, the longevity
Life is long.
Button uses the cloth exchange line that staggers up and down, compares tradition net-point shape layout and to save the silver slurry consumption of nearly half, and
The sensitivity and the button effect that touch are not affected.
Accompanying drawing explanation
Fig. 1 is top view of the present utility model；
Fig. 2 is the A-A cutaway view Amplified image of Fig. 1；
Fig. 3 is the B direction view of Fig. 2；
Fig. 4 is the E direction view of Fig. 2；
Fig. 5 is the C-C enlarged drawing of Fig. 4；
Fig. 6 is the D-D enlarged drawing of Fig. 3；
Fig. 7 is other structure one figure of sealing coat+key mapping；
Fig. 8 is other structure two figure of sealing coat+key mapping；
Fig. 9 is other structure three figure of sealing coat+key mapping；
Figure 10 is other structure four figure of sealing coat+key mapping；
Figure 11 is other structure five figure of sealing coat+key mapping；
Figure 12 is other structure six figure of sealing coat+key mapping；
Figure 13 is other structure seven figure of sealing coat+key mapping；
Figure 14 is other structure eight figure of sealing coat+key mapping；
Figure 15 is other structure nine figure of sealing coat+key mapping；
Figure 16 is other structure ten figure of sealing coat+key mapping；
Figure 17 is other structure 11 figure of sealing coat+key mapping；
Figure 18 is other structure 12 figure of sealing coat+key mapping；
Figure 19 is other structure 13 figure of sealing coat+key mapping；
Figure 20 is other structure 14 figure of sealing coat+key mapping；
Figure 21 is other structure 15 figure of sealing coat+key mapping.
Detailed description of the invention
In conjunction with the drawings and specific embodiments, this utility model is further illustrated.
As shown in Figures 1 to 6, a kind of thin film switch, including upper thin layer 11, lower thin layer 21, upper conductive layer and under lead
Electric layer, described upper conductive layer is arranged on thin layer 11 lower surface, and described lower conductiving layer is arranged on the upper table of lower thin layer 21
On face, described upper conductive layer and lower conductiving layer are respectively arranged with corresponding upper key mapping 12 and lower key mapping 22, described upper key mapping 12
The upper thin layer 11 of neighboring and upper conductive layer are coated with sealing coat 13, lower thin layer 21 He of described lower key mapping 22 neighboring
Lower conductiving layer is coated with lower sealing coat 23, upper sealing coat 13 and lower sealing coat 23 and uses silk-screen mode to be formed for UV glue, upper isolation
Layer 13 and lower sealing coat 23 by being covered in glue layer symmetry thereon and fit and formed a bed course, upper sealing coat 13 with under every
The thickness sum of absciss layer 23 is more than upper conductive layer and the thickness sum of lower conductiving layer, and upper sealing coat 13 at least includes small one and large one
Annular or be at least made up of two sealing coats 131 and 132 of similar annular an arc, wherein, little sealing coat 132 be set in greatly every
In absciss layer 131, in this specific embodiment, little sealing coat 132 is all to be made up of similar annular 4 arcs with big sealing coat 131
Structure, there is between arc a spacing 16, as cabling breach, certainly, in other embodiments, little sealing coat 132 He
Big sealing coat 131 can be all closed annular structure, covers in the circuit trace of conductive layer, little sealing coat 132 and big isolation
Layer 131 tool is at regular intervals, and spacing can be configured according to practical situation, when spacing is bigger, if can be provided with in spacing
Dry connecting key 133 connects little sealing coat 132 and big sealing coat 133, so makes little sealing coat 132 and the knot of big sealing coat 133
Structure is more stable, the thick 0.7-1.0mm of line of little sealing coat 132 and big sealing coat 131, and connecting key 133 is 45 degree of not icocline linea angulatas, and
And axisymmetric on left and right, connecting key 133 is spaced apart about 1.7-2mm with connecting key 133.Lower sealing coat 23 at least includes one
A big little annular or be at least made up of two sealing coats 231 and 232 of similar annular an arc, wherein, little sealing coat 232 overlaps
Being located in big sealing coat 231, in this specific embodiment, little sealing coat 232 and big sealing coat 231 are all to be made up of 4 arcs
Similar loop configuration, there is between arc a spacing 26, as cabling breach, certainly, in other embodiments, little isolation
Layer 232 and big sealing coat 231 can be all closed annular structures, cover in the circuit trace of conductive layer, little sealing coat 232 He
Big sealing coat 231 has at regular intervals, and spacing can be configured according to practical situation, when spacing is bigger, permissible in spacing
It is provided with some connecting keys 233 and connects little sealing coat 232 and big sealing coat 233, so make little sealing coat 232 and big sealing coat
The structure of 233 is more stable, the thick 0.7-1.0mm of line of little sealing coat 232 and big sealing coat 231, and connecting key 233 is a=45 degree
Oblique angle line, and axisymmetric on left and right, interval about the L1=1.7-2mm of connecting key 233 and connecting key 233.Thin film switch
Periphery fits in one also through silk-screen glue layer 14,24, and making whole thin film switch is a sealing area, will lead up and down
Electric layer is completely isolated with the external world, the bottom of lower thin layer 21 also silk-screen primer layer 26 be affixed on on complete machine miscellaneous part.
Further, the thickness of upper sealing coat 13 and lower sealing coat 23 is 0.04-0.05mm, and upper and lower sealing coat 13,23 is folded
Close and form 0.8～1mm bed course so that upper have certain interval between key mapping 12 and lower key mapping 22.I.e. septulum is enclosed in upper sealing coat 13
The inwall of absciss layer 132 encloses the inwall of the least sealing coat 232 to lower key in the distance and lower sealing coat 23 of upper key mapping 12 periphery
The distance of 22 peripheries, position is 1.7-2.0mm.
Further, when the area of upper key mapping 12 and lower key mapping 22 is bigger, especially when more than 10*10mm when,
For preventing button local collapse from becoming to lose efficacy, some upper insulation points in the region of upper key mapping 12 and lower key mapping 22, can be respectively equipped with
15 and lower insulation point 25.In this specific embodiment, upper insulation point 15 and lower insulation point 25 are cylindrical, have dielectric ink
Printing forms, upper insulation point 15 and a diameter of 0.6-0.8mm of lower insulation point 25, and thickness is 0.04-0.05mm, upper insulation
Spacing L5=3-6mm between spacing and lower insulation point between point 15 each point.
Further, between upper and lower conductive layers and the lower films layer 11,12 outside upper sealing coat 13 and lower sealing coat 23, also
Bonded by glue layer 14,24.On the node that the circuit trace of upper and lower conductive layers is intersected and be disposed with block insulation oil 17 Hes
27, and exposed lead-in wire also prints insulating oil 17 and 27 and protects, and improves its insulation safety performance.
Upper key mapping 12 and lower key mapping 22 are made up of a plurality of spaced conductor wire respectively, the conductor wire of upper key mapping 12 with under
The conductor wire of key mapping 22 is arranged in a crossed manner, presents latticed after fitting together.As shown in Figure 5 and Figure 6, upper key mapping 12 is by a plurality of phase
The longitudinal conductor wire being spaced apart 1.5-2.0mm mutually is constituted, and the two ends of each longitudinal conductor wire are connected one by the conductor wire of outer ring
Rising and electrically connect with a control line of winding displacement, lower key mapping 22 is by the transverse conductance line structure of a plurality of spaced L3=1.5-2.0mm
Becoming, the two ends of each transverse conductance line are connected together by the conductor wire of outer ring and electrically connect with another control line of winding displacement.
Certainly, upper key mapping 12 and the conductor wire of lower key mapping 22 and upper sealing coat 13 and lower sealing coat 23 can also use other structure,
As Fig. 7 to Figure 21 gives several version.
Although specifically show and describe this utility model in conjunction with preferred embodiment, but those skilled in the art should
This is understood, in the spirit and scope of the present utility model limited without departing from appended claims, in form and details
On this utility model can be made a variety of changes, be protection domain of the present utility model.
Claims (9)
1. a thin film switch, including upper thin layer, lower thin layer, upper conductive layer and lower conductiving layer, described upper conductive layer is arranged
Below upper thin layer, described lower conductiving layer is arranged on lower thereon, and described upper conductive layer and lower conductiving layer are respectively provided with
Having corresponding upper key mapping and lower key mapping, upper thin layer and the upper conductive layer of described upper key mapping neighboring are coated with sealing coat,
The lower thin layer of described lower key mapping neighboring and lower conductiving layer are coated with lower sealing coat, described upper sealing coat and lower sealing coat to be passed through
Being covered in glue layer symmetry thereon fit and form a bed course, the thickness sum of described upper sealing coat and lower sealing coat is more than
The thickness sum of upper conductive layer and lower conductiving layer, it is characterised in that: described upper sealing coat and lower sealing coat the most at least include that one is big
One little annular or be at least made up of two sealing coats of similar annular an arc, wherein, little sealing coat is set in big sealing coat
In, the periphery of thin film switch fits in one also through glue layer.
Thin film switch the most according to claim 1, it is characterised in that: described little annular isolation layer and big annular sealing coat tool
At regular intervals, it is provided with some connecting keys in described spacing and connects little sealing coat and big sealing coat.
Thin film switch the most according to claim 1, it is characterised in that: the thickness of described upper sealing coat and lower sealing coat is
0.04-0.05mm, encloses lower key mapping periphery in described upper sealing coat in enclosing the peripheral distance of key mapping and lower sealing coat
Distance is 1.7-2.0mm.
Thin film switch the most according to claim 1, it is characterised in that: described upper key mapping and lower key mapping respectively by a plurality of mutually
The conductor wire at interval is constituted, and the conductor wire of described upper key mapping is arranged in a crossed manner with the conductor wire of lower key mapping, presents after fitting together
Latticed.
Thin film switch the most according to claim 1, it is characterised in that: set respectively in the region of described upper key mapping and lower key mapping
There are some upper insulation points and lower insulation point.
Thin film switch the most according to claim 5, it is characterised in that: described upper insulation point and lower insulation point are circle
Cylindricality, upper insulation point and a diameter of 0.6-0.8mm of lower insulation point, thickness is 0.04-0.05mm, upper insulation point each point
Between spacing and lower insulation point between spacing be 3-6mm.
Thin film switch the most according to claim 1, it is characterised in that: between upper and lower conductive layers, pass through in non-key mapping region
Glue layer bonds.
Thin film switch the most according to claim 1, it is characterised in that: on the node that the circuit trace of upper and lower conductive layers is intersected
It is disposed with insulating oil, and exposed lead-in wire also prints insulating oil and protects.
Thin film switch the most according to claim 1, it is characterised in that: described lower thin layer is provided below primer layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620740311.6U CN205789637U (en) | 2016-07-14 | 2016-07-14 | A kind of thin film switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620740311.6U CN205789637U (en) | 2016-07-14 | 2016-07-14 | A kind of thin film switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205789637U true CN205789637U (en) | 2016-12-07 |
Family
ID=58122435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620740311.6U Active CN205789637U (en) | 2016-07-14 | 2016-07-14 | A kind of thin film switch |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205789637U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110660604A (en) * | 2018-06-28 | 2020-01-07 | 群光电子(苏州)有限公司 | Anti-ghost key membrane switch device |
-
2016
- 2016-07-14 CN CN201620740311.6U patent/CN205789637U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110660604A (en) * | 2018-06-28 | 2020-01-07 | 群光电子(苏州)有限公司 | Anti-ghost key membrane switch device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 361000 No. 108 Siming Park, Tong'an industrial concentration zone, Xiamen, Fujian Province Patentee after: Xiamen Xinming Technology Co.,Ltd. Address before: 361000 No. 108 Siming Park, Tong'an industrial concentration zone, Xiamen, Fujian Province Patentee before: XIAMEN MING XIN TECHNOLOGY CO.,LTD. |