CN205786306U - 太赫兹近场探测器及其光电导天线 - Google Patents
太赫兹近场探测器及其光电导天线 Download PDFInfo
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- CN205786306U CN205786306U CN201620480935.9U CN201620480935U CN205786306U CN 205786306 U CN205786306 U CN 205786306U CN 201620480935 U CN201620480935 U CN 201620480935U CN 205786306 U CN205786306 U CN 205786306U
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- antenna
- gaas
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- photoconductive antenna
- terahertz
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- 239000000523 sample Substances 0.000 title claims abstract description 47
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 39
- 238000001514 detection method Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000004888 barrier function Effects 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 238000000407 epitaxy Methods 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000004568 cement Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 230000005622 photoelectricity Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 30
- 238000003384 imaging method Methods 0.000 description 7
- 230000005855 radiation Effects 0.000 description 6
- 238000001328 terahertz time-domain spectroscopy Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
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- 239000013307 optical fiber Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105870582A (zh) * | 2016-05-24 | 2016-08-17 | 深圳市太赫兹系统设备有限公司 | 太赫兹近场探测器、光电导天线及其制作方法 |
CN107203054A (zh) * | 2017-05-27 | 2017-09-26 | 中国电子科技集团公司第四十研究所 | 一种太赫兹可变衰减器 |
CN107860742A (zh) * | 2017-11-03 | 2018-03-30 | 中国科学院重庆绿色智能技术研究院 | 一种反射式太赫兹时域近场扫描显微镜 |
CN110690569A (zh) * | 2019-09-10 | 2020-01-14 | 天津大学 | 在传输线上集成微结构的太赫兹光电导发射天线 |
CN113267465A (zh) * | 2021-05-13 | 2021-08-17 | 重庆邮电大学 | 一种基于时域光谱技术的太赫兹双模式成像系统及方法 |
-
2016
- 2016-05-24 CN CN201620480935.9U patent/CN205786306U/zh not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105870582A (zh) * | 2016-05-24 | 2016-08-17 | 深圳市太赫兹系统设备有限公司 | 太赫兹近场探测器、光电导天线及其制作方法 |
CN105870582B (zh) * | 2016-05-24 | 2017-07-18 | 深圳市太赫兹系统设备有限公司 | 太赫兹近场探测器、光电导天线及其制作方法 |
WO2017201888A1 (zh) * | 2016-05-24 | 2017-11-30 | 深圳市太赫兹系统设备有限公司 | 太赫兹近场探测器、光电导天线及其制作方法 |
CN107203054A (zh) * | 2017-05-27 | 2017-09-26 | 中国电子科技集团公司第四十研究所 | 一种太赫兹可变衰减器 |
CN107203054B (zh) * | 2017-05-27 | 2020-04-03 | 中国电子科技集团公司第四十一研究所 | 一种太赫兹可变衰减器 |
CN107860742A (zh) * | 2017-11-03 | 2018-03-30 | 中国科学院重庆绿色智能技术研究院 | 一种反射式太赫兹时域近场扫描显微镜 |
CN107860742B (zh) * | 2017-11-03 | 2020-04-07 | 中国科学院重庆绿色智能技术研究院 | 一种反射式太赫兹时域近场扫描显微镜 |
CN110690569A (zh) * | 2019-09-10 | 2020-01-14 | 天津大学 | 在传输线上集成微结构的太赫兹光电导发射天线 |
CN113267465A (zh) * | 2021-05-13 | 2021-08-17 | 重庆邮电大学 | 一种基于时域光谱技术的太赫兹双模式成像系统及方法 |
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Effective date of registration: 20170221 Address after: 518102 Guangdong Province, Baoan District Xixiang street Shenzhen City Tian Yi Lu Chen Tian Bao Industrial District 37 Building 2 floor East Patentee after: SHENZHEN TERAHERTZ SYSTEM EQUIPMENT Co.,Ltd. Patentee after: SHENZHEN THZ SCIENCE AND TECHNOLOGY INNOVATION INSTITUTE Address before: 518102 Guangdong Province, Baoan District Xixiang street Shenzhen City Tian Yi Lu Chen Tian Bao Industrial District 37 Building 2 floor East Patentee before: SHENZHEN TERAHERTZ SYSTEM EQUIPMENT Co.,Ltd. |
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