CN205723531U - A kind of power model being provided with insulating barrier - Google Patents

A kind of power model being provided with insulating barrier Download PDF

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Publication number
CN205723531U
CN205723531U CN201620388078.XU CN201620388078U CN205723531U CN 205723531 U CN205723531 U CN 205723531U CN 201620388078 U CN201620388078 U CN 201620388078U CN 205723531 U CN205723531 U CN 205723531U
Authority
CN
China
Prior art keywords
insulating barrier
electrode
main part
power
chip set
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn - After Issue
Application number
CN201620388078.XU
Other languages
Chinese (zh)
Inventor
徐文辉
王玉林
滕鹤松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yangzhou Guoyang Electronic Co Ltd
Original Assignee
Yangzhou Guoyang Electronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yangzhou Guoyang Electronic Co Ltd filed Critical Yangzhou Guoyang Electronic Co Ltd
Priority to CN201620388078.XU priority Critical patent/CN205723531U/en
Application granted granted Critical
Publication of CN205723531U publication Critical patent/CN205723531U/en
Withdrawn - After Issue legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

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  • Insulating Bodies (AREA)

Abstract

A kind of power model being provided with insulating barrier that the utility model provides, including chip set, output electrode and power electrode, power electrode all includes electrode lead-out part, the electrode body portion being connected with electrode lead-out part and the electrode contact being connected with electrode body portion, described electrode contact is connected with chip set, also include insulating barrier, described insulating barrier includes insulating barrier main part, insulating barrier main part is extended with insulating barrier extension in the side near electrode contact to chip set direction, insulating barrier main part is arranged between electrode body portion and chip set.The conductive gas that blast produces can be separated with electrode when explosion phenomenon occurs in chip, thus prevent any two of which electrode conduction and cause the unsafe condition such as electrode arcing and module burning by the utility model, improves the security that module uses.

Description

A kind of power model being provided with insulating barrier
Technical field
The utility model relates to field of power electronics, is specifically related to a kind of power model being provided with insulating barrier.
Background technology
Power model is power power electronic device such as metal-oxide-semiconductor (metal-oxide semiconductor (MOS)), IGBT (insulation Grid-type field-effect transistor), the power switch that is combined and packaged into by certain function of FRD (fast recovery diode) Module, it is mainly used in the work(under the various occasions such as electric automobile, photovoltaic generation, wind-power electricity generation, industry frequency conversion Rate is changed.
Some power models existing, the distance between its multiple power electrodes is close, with three electrical level power module As a example by, as it is shown in figure 1, be a kind of existing power model, including chip set the 1st, output electrode the 2nd, in Between electrode the 3rd, positive electrode 4 and negative electrode 5, and target the 3rd, positive electrode 4 and negative electrode 5 three's distance Relatively near, these three power electrode is also close with the distance of lower die set.During module uses, due to Some reason chip may produce blast, and explode and can produce a large amount of conductive gas, positive electrode, negative electrode And there is no insulating protection between target, when the conductive gas conducting any two of which electrode that blast produces When, electrode arcing combustion phenomena will occur, so that the machine system installing module causes damage, even produce Raw danger.
Utility model content
Utility model purpose: for the problems referred to above, the utility model aims to provide one and avoids chip explosion time to make Become a kind of power model being provided with insulating barrier of electrode arcing.
Technical scheme: a kind of power model being provided with insulating barrier, including chip set, output electrode and power supply Electrode, power electrode all includes electrode lead-out part, the electrode body portion that is connected with electrode lead-out part and and electrode The electrode contact that main part is connected, described electrode contact is connected with chip set, also includes insulating barrier, Described insulating barrier includes insulating barrier main part, insulating barrier main part near electrode contact side to Chip set direction is extended with insulating barrier extension, and insulating barrier main part is arranged at electrode body portion and chip Between set.
Further, insulating barrier main part prolongs in the direction being laterally away from chip set near output electrode Stretching has insulating barrier fixed part, and insulating barrier fixed part is detachably connected in electrode body portion, and insulating barrier is solid Determine portion, with insulating barrier main part, electrode body portion is enclosed in inner side.
Further, insulating barrier main part is extended with multiple insulating barrier extension.
Further, insulating barrier fixed part and the length of the intersection of insulating barrier main part are not less than power electrode The length of longest edge.
Further, power electrode is target.
Further, insulating barrier fixed part is connected by screw in electrode body portion.
Further, insulating barrier is high temperature insulation dividing plate.
Beneficial effect: the utility model is by arranging insulation between the target and chip set of power model Dividing plate, is looped around inner side and the bottom of target, positive electrode and negative electrode, even if there is explosion phenomenon in chip, Also effectively the conductive gas that blast produces can be separated with electrode, thus prevent any two of which electrode Turn on and cause the unsafe condition such as electrode arcing and module burning, improve the security that module uses.
Brief description
Fig. 1 is the structural representation of the power model of prior art;
Fig. 2 (a) is structural representation of the present utility model;
Fig. 2 (b) is partial structurtes enlarged drawing of the present utility model;
Fig. 3 is the structural representation that insulating barrier is arranged in power model;
Fig. 4 (a) is the front view after insulating barrier is installed with target;
Fig. 4 (b) is the installation AA direction sectional view of insulating barrier and target;
Fig. 4 (c) is the installation BB direction sectional view of insulating barrier and target;
Fig. 4 (d) is the installation top view of insulating barrier and target;
Fig. 5 (a) is the stereogram of insulating barrier and the installation of target;
Fig. 5 (b) is the stereogram of insulating barrier and another visual angle of target;
Fig. 5 (c) is the installation process schematic diagram of insulating barrier and target.
Detailed description of the invention
As shown in Fig. 2 (a), for a kind of power model being provided with insulating barrier of the utility model offer, bag Include chip set the 1st, output electrode 2 and power electrode, as a example by this sentences three electrical level power module, electricity here Source electrode may refer to the target 3 in figure or positive electrode 4 or negative electrode 5, exhausted in the present embodiment Edge dividing plate 6 is arranged on length electrode target 3 the longest, and insulating barrier 6 is just permissible thus It is looped around inner side and the bottom of target the 3rd, positive electrode 4 and negative electrode 5, to obtain optimal insulation effect, Therefore, power electrode is target 3 in this embodiment, and insulating barrier 6 is high temperature insulation dividing plate.
As shown in Fig. 2 (b), target 3 includes horizontally disposed electrode lead-out part 7 and electrode lead-out part 7 electrode body portions 8 connected vertically and the electrode contact 9 being connected with electrode body portion 8, described electrode Contact site 9 is connected with chip set 1, and insulating barrier 6 includes insulating barrier main part 62, insulating barrier master Body 62 is extended with multiple insulating barrier and extends in the side near electrode contact 9 to chip set 1 direction Portion 63, as it is shown on figure 3, the quantity of insulating barrier extension 63 is 6 in the present embodiment, insulating barrier master Body 62 is arranged between electrode body portion 8 and chip set 1;Insulating barrier main part 62 is near output The direction that the one of electrode 2 is laterally away from chip set 1 is extended with insulating barrier fixed part 61, and insulating barrier is solid Determine portion 61 to be detachably connected in electrode body portion 8, insulating barrier fixed part 61 and insulating barrier main part Electrode body portion 8 is enclosed in inner side by 62.
As it is shown on figure 3, insulating barrier fixed part 61 is connected by screw with the electrode body portion 8 of target 3 Connect, the present embodiment uses four screws by the electrode body portion 8 of target 3 and insulating barrier fixed part 61 fix, as shown in Fig. 4 (a), Fig. 4 (b), Fig. 4 (c), Fig. 4 (d).
In order to ensure insulation effect, the length of the intersection of insulating barrier fixed part 61 and insulating barrier main part 62 Not less than the length of target 3 longest edge, as shown in Fig. 5 (a), Fig. 5 (b), Fig. 5 (c).
The utility model, by arranging insulating barrier between the electrode of power model and chip set, improves mould The security that block uses.Below it is only preferred embodiment of the present utility model, it should be pointed out that: for this technology For the those of ordinary skill in field, on the premise of without departing from the utility model principle, can also make some Improvements and modifications, these improvements and modifications also should be regarded as protection domain of the present utility model.

Claims (7)

1. it is provided with a power model for insulating barrier, including chip set (1), output electrode (2) and electricity Source electrode, power electrode all includes the electrode body that electrode lead-out part (7) is connected with electrode lead-out part (7) Portion (8) and the electrode contact (9) being connected with electrode body portion (8), described electrode contact (9) It is connected with chip set (1), it is characterised in that also include insulating barrier (6), described insulating barrier (6) Including insulating barrier main part (62), insulating barrier main part (62) is near the one of electrode contact (9) Lateral chip set (1) direction is extended with insulating barrier extension (63), and insulating barrier main part (62) sets It is placed between electrode body portion (8) and chip set (1).
2. a kind of power model being provided with insulating barrier according to claim 1, it is characterised in that institute State insulating barrier main part (62) in the side being laterally away from chip set (1) near the one of output electrode (2) To being extended with insulating barrier fixed part (61), insulating barrier fixed part (61) is detachably connected on electrode body In portion (8), insulating barrier fixed part (61) and insulating barrier main part (62) are by electrode body portion (8) It is enclosed in inner side.
3. a kind of power model being provided with insulating barrier according to claim 1, it is characterised in that institute State insulating barrier main part (62) and be extended with multiple insulating barrier extension.
4. a kind of power model being provided with insulating barrier according to claim 1, it is characterised in that institute The length stating insulating barrier fixed part (61) with the intersection of insulating barrier main part (62) is not less than power electrode The length of longest edge.
5. a kind of power model being provided with insulating barrier according to claim 1, it is characterised in that institute Stating power electrode is target (3).
6. a kind of power model being provided with insulating barrier according to claim 2, it is characterised in that absolutely Edge dividing plate fixed part (61) is connected by screw on electrode body portion (8).
7. a kind of power model being provided with insulating barrier according to according to any one of claim 1-6, it is special Levying and being, described insulating barrier (6) is high temperature insulation dividing plate.
CN201620388078.XU 2016-05-03 2016-05-03 A kind of power model being provided with insulating barrier Withdrawn - After Issue CN205723531U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201620388078.XU CN205723531U (en) 2016-05-03 2016-05-03 A kind of power model being provided with insulating barrier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201620388078.XU CN205723531U (en) 2016-05-03 2016-05-03 A kind of power model being provided with insulating barrier

Publications (1)

Publication Number Publication Date
CN205723531U true CN205723531U (en) 2016-11-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201620388078.XU Withdrawn - After Issue CN205723531U (en) 2016-05-03 2016-05-03 A kind of power model being provided with insulating barrier

Country Status (1)

Country Link
CN (1) CN205723531U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105957860A (en) * 2016-05-03 2016-09-21 扬州国扬电子有限公司 Power module provided with insulated septum

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105957860A (en) * 2016-05-03 2016-09-21 扬州国扬电子有限公司 Power module provided with insulated septum
CN105957860B (en) * 2016-05-03 2018-07-20 扬州国扬电子有限公司 A kind of power module equipped with insulating barrier

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GR01 Patent grant
AV01 Patent right actively abandoned

Granted publication date: 20161123

Effective date of abandoning: 20180720

AV01 Patent right actively abandoned

Granted publication date: 20161123

Effective date of abandoning: 20180720

AV01 Patent right actively abandoned
AV01 Patent right actively abandoned