CN205723493U - A kind of novel metal encapsulation type MOS audion - Google Patents

A kind of novel metal encapsulation type MOS audion Download PDF

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Publication number
CN205723493U
CN205723493U CN201620363166.4U CN201620363166U CN205723493U CN 205723493 U CN205723493 U CN 205723493U CN 201620363166 U CN201620363166 U CN 201620363166U CN 205723493 U CN205723493 U CN 205723493U
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metal
wing plate
semiconductor chip
fixing
type mos
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CN201620363166.4U
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王兴
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Nanjing Jiang Zhi Technology Co Ltd
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Abstract

A kind of novel metal encapsulation type MOS audion, it is characterized in that: include fixing wing plate, metal cap, fixing screw hole and semiconductor chip, it is provided with metal cap in the middle part of fixing wing plate front surface, it is fixing that wing plate is symmetrical above and below is provided with fixing screw hole, metal cap is internally provided with semiconductor chip, drain electrode it is provided with on semiconductor chip, grid it is provided with on the downside of drain electrode, source electrode it is provided with on the downside of grid, it is provided with Metal Packaging lid in the middle part of fixing wing plate rear surface, pole extending port it is provided with on Metal Packaging lid, have the beneficial effects that: conduction voltage drop is little, conducting resistance is little, raster data model need not electric current, it is lost little, drive circuit is simple, heat resistance characteristic is good, it is suitable for high-power parallel connection, can be at micro-electric current, work under low voltage condition, and it is easy to integrated.

Description

A kind of novel metal encapsulation type MOS Audion
Technical field
This utility model belongs to MOS audion apparatus field, is specifically related to a kind of novel metal encapsulation type MOS audion.
Background technology
Metal-oxide-semiconductor is field-effect transistor, is a kind of voltage control device.And normal transistor (also known as bipolar transistor) is a kind of current control device, metal-oxide-semiconductor have N-channel and P-channel point, both opposite polarity, as PNP is with NPN transistor.Metal-oxide-semiconductor is metal (metal) oxide (oxid) quasiconductor (semiconductor) field-effect transistor, or claims to be metal insulator (insulator) quasiconductor.Source and drain of metal-oxide-semiconductor can exchange, and they are the N-type region formed in p-type backgate.As a rule, this Liang Ge district is the same, even if the performance also not interfering with device is exchanged at two ends.Such device is considered as symmetrical.No matter N-type or p-type metal-oxide-semiconductor, its operation principle essence is the same.Metal-oxide-semiconductor is the electric current being carried out control output end drain electrode by the voltage being added in input grid.Metal-oxide-semiconductor is the characteristic of its voltage control device by being added on grid of voltage-controlled device, will not occur as the charge-storage effect caused because of base current when audion switchs, and therefore in switch application, the switching speed of metal-oxide-semiconductor should be faster than audion.But it is big that the MOS audion currently used exists conduction voltage drop, the loss of power is big, installs the shortcomings such as inconvenient.
Utility model content
The purpose of this utility model is that provides a kind of novel metal encapsulation type MOS audion to solve the problems referred to above.
This utility model is achieved through the following technical solutions above-mentioned purpose:
A kind of novel metal encapsulation type MOS audion, including fixing wing plate, metal cap, fixing screw hole and semiconductor chip, it is provided with metal cap in the middle part of fixing wing plate front surface, the fixing wing plate fixing screw hole that is provided with symmetrical above and below, metal cap is internally provided with semiconductor chip, and semiconductor chip is provided with drain electrode, grid it is provided with on the downside of drain electrode, it is provided with source electrode on the downside of grid, is provided with Metal Packaging lid in the middle part of fixing wing plate rear surface, Metal Packaging lid is provided with pole extending port.
In said structure, source electrode, grid and drain electrode are welded on circuit boards by scolding tin, and audion is fixed on circuit boards by fixing screw hole by screw, just can use.
As preferred version of the present utility model, determining wing plate and connect by being weldingly connected with metal cap, fixing screw hole is by becoming in fixing wing plate upper punch swaging.
As preferred version of the present utility model, semiconductor chip is clipped in inside metal cap, and semiconductor chip and drain electrode are weldingly connected by scolding tin and connect.
As preferred version of the present utility model, semiconductor chip and grid are weldingly connected by scolding tin and connect, and semiconductor chip and source electrode are weldingly connected by scolding tin and connect.
As preferred version of the present utility model, Metal Packaging lid connects by being weldingly connected with fixing wing plate, and pole extending port is by being stamped and formed out on Metal Packaging lid.
Having the beneficial effects that: conduction voltage drop is little, conducting resistance is little, and raster data model need not electric current, is lost little, and drive circuit is simple, and heat resistance characteristic is good, is suitable for high-power parallel connection, can work, and be easy to integrated under micro-electric current, low voltage condition.
Accompanying drawing explanation
Fig. 1 is the front view of a kind of novel metal encapsulation type MOS audion described in the utility model;
Fig. 2 is the left view of a kind of novel metal encapsulation type MOS audion described in the utility model;
Fig. 3 is the rearview of a kind of novel metal encapsulation type MOS audion described in the utility model.
Description of reference numerals is as follows:
1, fixing wing plate;2, metal cap;3, fixing screw hole;4, source electrode;5, grid;6, drain electrode;7, semiconductor chip;8, Metal Packaging lid;9, pole extending port.
Detailed description of the invention
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with drawings and Examples, this utility model is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain this utility model, is not used to limit this utility model.
nullAs shown in Fig. 1-Fig. 2-Fig. 3,A kind of novel metal encapsulation type MOS audion,Including fixing wing plate 1、Metal cap 2、Fixing screw hole 3 and semiconductor chip 7,It is provided with metal cap 2 in the middle part of fixing wing plate 1 front surface,It is fixing that wing plate 1 is symmetrical above and below is provided with fixing screw hole 3,Metal cap 2 is internally provided with semiconductor chip 7,Metal cap 2 plays the effect of protection internal semiconductor chip 7,And it is possible to prevent static interference,Drain electrode 6 it is provided with on semiconductor chip 7,It is provided with grid 5 on the downside of drain electrode 6,Source electrode 4 it is provided with on the downside of grid 5,It is provided with Metal Packaging lid 8 in the middle part of fixing wing plate 1 rear surface,Semiconductor chip 7 is encapsulated in metal cap 2 internal,Pole extending port 9 it is provided with on Metal Packaging lid 8,Source electrode 4、Grid 5 and drain electrode 6 are stretched by pole extending port 9,So that installing on circuit boards.
In said structure, source electrode 4, grid 5 and drain electrode 6 are welded on circuit boards by scolding tin, and audion is fixed on circuit boards by fixing screw hole 3 by screw, just can use.
As preferred version of the present utility model, fixing wing plate 1 connects by being weldingly connected with metal cap 2, fixing screw hole 3 is by being stamped and formed out on fixing wing plate 1, semiconductor chip 7 clamping is inside metal cap 2, semiconductor chip 7 is weldingly connected by scolding tin with drain electrode 6 and connects, semiconductor chip 7 and grid 5 are weldingly connected by scolding tin and connect, semiconductor chip 7 and source electrode 4 are weldingly connected by scolding tin and connect, Metal Packaging lid 8 connects by being weldingly connected with fixing wing plate 1, and pole extending port 9 is by being stamped and formed out on Metal Packaging lid 8.
Of the present utility model ultimate principle, principal character and advantage have more than been shown and described.Skilled person will appreciate that of the industry; this utility model is not restricted to the described embodiments; described in above-described embodiment and description, principle of the present utility model is simply described; on the premise of without departing from this utility model spirit and scope; this utility model also has various changes and modifications, in the range of these changes and improvements both fall within claimed this utility model.This utility model claims scope and is defined by appending claims and effect thing thereof.

Claims (5)

1. a novel metal encapsulation type MOS audion, it is characterized in that: include fixing wing plate, metal cap, fixing screw hole and semiconductor chip, it is provided with metal cap in the middle part of fixing wing plate front surface, it is fixing that wing plate is symmetrical above and below is provided with fixing screw hole, metal cap is internally provided with semiconductor chip, drain electrode it is provided with on semiconductor chip, grid it is provided with on the downside of drain electrode, source electrode it is provided with on the downside of grid, it is provided with Metal Packaging lid in the middle part of fixing wing plate rear surface, Metal Packaging lid is provided with pole extending port.
A kind of novel metal encapsulation type MOS audion the most according to claim 1, it is characterised in that: fixing wing plate connects by being weldingly connected with metal cap, and fixing screw hole is by becoming in fixing wing plate upper punch swaging.
A kind of novel metal encapsulation type MOS audion the most according to claim 1, it is characterised in that: semiconductor chip is clipped in inside metal cap, and semiconductor chip and drain electrode are weldingly connected by scolding tin and connect.
A kind of novel metal encapsulation type MOS audion the most according to claim 1, it is characterised in that: semiconductor chip and grid are weldingly connected by scolding tin and connect, and semiconductor chip and source electrode are weldingly connected by scolding tin and connect.
A kind of novel metal encapsulation type MOS audion the most according to claim 1, it is characterised in that: Metal Packaging lid connects by being weldingly connected with fixing wing plate, and pole extending port is by being stamped and formed out on Metal Packaging lid.
CN201620363166.4U 2016-04-27 2016-04-27 A kind of novel metal encapsulation type MOS audion Active CN205723493U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201620363166.4U CN205723493U (en) 2016-04-27 2016-04-27 A kind of novel metal encapsulation type MOS audion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201620363166.4U CN205723493U (en) 2016-04-27 2016-04-27 A kind of novel metal encapsulation type MOS audion

Publications (1)

Publication Number Publication Date
CN205723493U true CN205723493U (en) 2016-11-23

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CN201620363166.4U Active CN205723493U (en) 2016-04-27 2016-04-27 A kind of novel metal encapsulation type MOS audion

Country Status (1)

Country Link
CN (1) CN205723493U (en)

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Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
CB03 Change of inventor or designer information

Inventor after: Yuan Xiaoming

Inventor before: Wang Xing

COR Change of bibliographic data
TR01 Transfer of patent right

Effective date of registration: 20170113

Address after: Jianye District of Nanjing City, Jiangsu province 210000 Jiqingmen Street North, West, Yanshan Road on the eastern side of River Road, Fuyuan Street on the south side of Wanda Plaza West Block 16 room 1208.

Patentee after: Nanjing Jiang Zhi Technology Co., Ltd.

Address before: 518034 Shenzhen, China, Shenzhen, Futian District, Mei Xiang Road, No. 1026 Huatai District 7-461

Patentee before: Wang Xing