CN205608387U - 用于极紫外光刻板级电子学系统的真空密封装置 - Google Patents
用于极紫外光刻板级电子学系统的真空密封装置 Download PDFInfo
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- CN205608387U CN205608387U CN201620189119.2U CN201620189119U CN205608387U CN 205608387 U CN205608387 U CN 205608387U CN 201620189119 U CN201620189119 U CN 201620189119U CN 205608387 U CN205608387 U CN 205608387U
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- seal casinghousing
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- 238000001900 extreme ultraviolet lithography Methods 0.000 description 2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
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Application Number | Priority Date | Filing Date | Title |
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CN201620189119.2U CN205608387U (zh) | 2016-03-11 | 2016-03-11 | 用于极紫外光刻板级电子学系统的真空密封装置 |
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CN201620189119.2U CN205608387U (zh) | 2016-03-11 | 2016-03-11 | 用于极紫外光刻板级电子学系统的真空密封装置 |
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CN205608387U true CN205608387U (zh) | 2016-09-28 |
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CN201620189119.2U Active CN205608387U (zh) | 2016-03-11 | 2016-03-11 | 用于极紫外光刻板级电子学系统的真空密封装置 |
Country Status (1)
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2016
- 2016-03-11 CN CN201620189119.2U patent/CN205608387U/zh active Active
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Effective date of registration: 20200819 Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Address before: 100190, No. 19 West Fourth Ring Road, Beijing, Haidian District Patentee before: Aerospace Information Research Institute,Chinese Academy of Sciences Effective date of registration: 20200819 Address after: 100190, No. 19 West Fourth Ring Road, Beijing, Haidian District Patentee after: Aerospace Information Research Institute,Chinese Academy of Sciences Address before: 100094, No. 9 Deng Nan Road, Beijing, Haidian District Patentee before: Academy of Opto-Electronics, Chinese Academy of Sciences |