CN205583994U - Switch module and use switching power supply of this switch module - Google Patents
Switch module and use switching power supply of this switch module Download PDFInfo
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- CN205583994U CN205583994U CN201620267046.4U CN201620267046U CN205583994U CN 205583994 U CN205583994 U CN 205583994U CN 201620267046 U CN201620267046 U CN 201620267046U CN 205583994 U CN205583994 U CN 205583994U
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Abstract
The utility model relates to a switch module and use switching power supply of this switch module, the switch module includes: the switch, the setting is in one side of switch and with the sheetmetal of switch coupling, wherein switching power supply includes metal casing, the switch module insulation is laminated and is arrived metal casing. Utilize the heat effluvium that metal casing sent on with the switch for as the switch of heat -generating body can furthest be close to the metal casing who has a great heat radiating area as cooling parts, practiced thrift the space when improving the radiating efficiency.
Description
Technical field
This utility model relates to Switching Power Supply, particularly relates to the switch module used in Switching Power Supply.
Background technology
Semiconductor switch is widely used in various circuit.Compared with mechanical switch, semiconductor switch has lot of advantages, and such as, life-span length (when mechanical switch disconnects the starting the arc, contact abrasion, semiconductor switch does not wear and tear), operating frequency is high, reliability high, use safety, electromagnetic interference low etc..
Thyristor has numerous species, such as, and bipolar transistor, high speed thyristor, turn-off thyristor, mos field effect transistor MOSFET and insulated gate bipolar transistor etc..
Switching Power Supply is to be maintained a kind of power supply of regulated output voltage by the time ratio controlling switch closed and disconnected.Specifically, utilize the characteristic of the energy storage of capacitor, inducer, by gate-controlled switch (such as, mos field effect transistor MOSFET etc.) carry out the action of HF switch, by the electrical power storage of input in capacitor or inducer, when the switches are opened, electric energy is released to again load to provide energy.Its output power or the ability of voltage and dutycycle, i.e. switch conduction times relevant with the ratio in the cycle of whole switch.
But, along with the high speed development of Power Electronic Technique, Switching Power Supply is proposed the more requirement such as high frequency, high conversion efficiency, high power density and low noise.
Utility model content
Utility model problem to be solved
In actual applications, the metal shell of the effects such as protection, shielding it has been both provided with around the circuit substrate of general Switching Power Supply.In this case, a parasitic capacitance can be produced between metal shell and switch.In the case of switching frequency is higher, Switching Power Supply can be caused significantly interference by this parasitic capacitance.
Accordingly, it would be desirable to a kind of switch auxiliary device that interference that Switching Power Supply caused by this parasitic capacitance can be reduced or removed.
For solving the technological means of technical problem
In order to overcome above-mentioned technical problem present in prior art, an embodiment of the present utility model provides a kind of switch module used in Switching Power Supply, and described switch module includes: switch；The side being arranged on described switch the sheet metal coupled with described switch；Wherein said Switching Power Supply includes that metal shell, the insulation of described switch module fit to described metal shell.The effect of the program is: sheet metal forms parasitic capacitance with the drain electrode of switch, solves the interference that Switching Power Supply is caused by the parasitic capacitance between metal shell and switch；It addition, utilize metal shell to be shed by the heat sent on switch so that the switch as heater can save space to greatest extent near the metal shell with bigger area of dissipation as thermal component while improving radiating efficiency.
In embodiment of the present utility model, described switch module also includes the thermal insulation layer being arranged between described switch and described sheet metal.The effect of the program is: what this thermal insulation layer reduced each electrode of sheet metal and switch contacts possibility by mistake, increases the reliability of parasitic capacitance so that it is be difficult to breakdown simultaneously.
In embodiment of the present utility model, described switch is mos field effect transistor switch mosfet, described switch, described sheet metal and described thermal insulation layer have identical end surface shape, and described sheet metal also has protuberance, in order to electrically connect with the source electrode of described switch mosfet.The effect of the program is: the structure of switch module is simplified, has saved space.
In embodiment of the present utility model, described thermal insulation layer passes through adhesives and described sheet metal and described switch mosfet bonding cambium layer stack structure.In embodiment of the present utility model, described thermal insulation layer is insulating heat-conductive layer of adhesive material, described sheet metal with described switch mosfet by described insulating heat-conductive layer of adhesive material bonding cambium layer stack structure.The effect of the program is: by being adhesively fixed between each layer of stepped construction, can prevent between each parts relative to position change.
In embodiment of the present utility model, described switch module also includes that insulation crust, the inwall of described insulation crust are close to described stepped construction, and the electrode of switch mosfet is exposed in lower section.The effect of the program is: this insulation crust can prevent the electrode of MOSFET from discharging with metal shell further, improves the stability of Switching Power Supply.
In embodiment of the present utility model, by adhesives, insulation crust is fixed on described metal shell.The effect of the program is: this adhesives can prevent the relative motion between insulation crust and metal shell.
In embodiment of the present utility model, described sheet metal is clipped between described switch and described metal shell.The drain electrode of sheet metal and MOSFET forms parasitic capacitance, and sheet metal is arranged on a side end face of MOSFET close to drain electrode, and the source of MOSFET heating is to embed the part within MOSFET in drain electrode.Therefore drain electrode embedding part within MOSFET should also be as from the metal shell for heat radiation more recently.The effect of the program is: be conducive to the heat radiation of Switching Power Supply.
In embodiment of the present utility model, described sheet metal fits to described metal shell by non-conductive adhesive material, and the coating zone of described non-conductive adhesive material extends to metal shell at the area periphery with metal bonding film.The effect of the program is: do not intercept outside stepped construction, can preferably dispel the heat, and non-conductive adhesive material extends to periphery and prevents from switching metal shell electric discharge.
In embodiment of the present utility model, clip is used to be fixed on described metal shell by described switch module.The effect of the program is: clip is uniform to the pressure distribution of switch, and switch is hardly damaged and can strengthen radiating effect.
Accompanying drawing explanation
In order to be further elucidated with above and other advantage and the feature of various embodiments of the present invention, the more specifically description of various embodiments of the present invention will be presented with reference to accompanying drawing.It is appreciated that the exemplary embodiments of the present invention only described by these accompanying drawings, is therefore not to be regarded as being restriction on its scope.Identical or corresponding parts will represent with same or similar labelling.
Fig. 1 shows booster converter according to an embodiment of the invention.
Fig. 2 shows that metal shell produces the equivalent circuit diagram of parasitic capacitance with switch mosfet.
Fig. 3 A shows the axonometric chart of the structure for reducing the interference that parasitic capacitance is caused.
Fig. 3 B is shown in the operating process of changer the equivalent circuit diagram existed in the case of parasitic capacitance Cp and parasitic capacitance Cxeq.
Fig. 4 illustrates the exploded view for reducing the structure disturbed produced by parasitic capacitance according to another embodiment of this utility model.
Fig. 5 shows the schematic diagram of the structure that switch mosfet stacks with thermal insulation layer, metal plate layer.
Fig. 6 shows the insulation crust being arranged on switching layer stack structure according to another embodiment of the present utility model.
Fig. 7 illustrates the axonometric chart that insulation crust is directly attached to metal shell according to an embodiment of the present utility model.
Detailed description of the invention
In the following description, with reference to each embodiment, present invention is described.But, those skilled in the art is it will be recognized that each embodiment can be implemented in the case of neither one or multiple specific detail or together with other replacement and/or addition method, material or assembly.In other situation, not shown or do not describe known structure, material or operation in detail in order to avoid making the aspects of various embodiments of the present invention obscure.Similarly, for purposes of explanation, specific quantity, material and configuration are elaborated, in order to provide the comprehensive understanding to embodiments of the invention.But, the present invention can implement in the case of not having specific detail.Further, it should be understood that each embodiment shown in accompanying drawing is illustrative expression and is not drawn necessarily to scale.
In this manual, " embodiment " or " this embodiment " are quoted special characteristic, structure or the characteristic meaning to combine the description of this embodiment to be included at least one embodiment of the present utility model.The phrase " in one embodiment " occurred in everywhere in this specification is not necessarily all referring to same embodiment.
During the work of Switching Power Supply, thyristor switches (typically up to megahertz level) with high frequency, accordingly, it would be desirable to protect Switching Power Supply and shield.On the other hand, semiconductor switch can produce heat in high frequency handoff procedure, it is therefore desirable to arranges corresponding radiator for semiconductor switch.
Hereinafter engage the booster converter shown in Fig. 1 and describe the auxiliary device of a kind of semiconductor switch in Switching Power Supply.It will be appreciated, however, that the switch auxiliary device disclosed by this utility model is applicable not only to the booster converter shown in Fig. 1, but also be applicable to other various circuit structures.
Fig. 1 shows booster converter 100 according to an embodiment of the invention.Booster converter 100 includes: high side capacitors C1, high side resistor R1, low side capacitors C2, low side resistance device R2, first to fourth diode D1-D4, switch mosfet Q1.Ground connection at the connection node of high side resistor R1 and low side resistance device R2.
In the operating process of booster converter 100 in the ideal situation, when switch mosfet Q1 turns on, electric current IDMAlong Fig. 1, flow in the direction indicated by dotted arrow.
In the ordinary course of things, the converter circuit 100 shown in Fig. 1 is formed on circuit boards, and is arranged around metal shell at circuit board.On the one hand this metal shell is used for protection shielding converter circuit from external environment influence.On the other hand, this metal shell is for carrying out ground connection to converter circuit.
But, in the practical work process of changer, metal shell can produce parasitic capacitance with some assembly in changer.Such as, figure 2 illustrates the equivalent circuit diagram of metal shell and switch mosfet Q1 generation parasitic capacitance Cp.
As shown in figure 2 above, when turning at switch mosfet Q1, between switch mosfet Q1 and ground nodes, form electric capacity CB.Parasitic capacitance Cp, electric capacity CBIt is connected to ground nodes.During the work of changer, at switch mosfet Q1, parasitic capacitance Cp, electric capacity CBIn the loop formed, produce interference electric current Icm.Disturb electric current Icm direction flowing (electric current flows through metal shell) along Fig. 2 indicated by dotted arrow.In the case of switching frequency is higher, changer can be produced and obviously disturb by interference electric current Icm.
In order to reduce interference electric current Icm interference that changer is produced, devise and a kind of be diverted to other current loop and reduce the structure of interference by will enter into the input Icm of changer.Fig. 3 A shows the axonometric chart of the structure for reducing the interference that parasitic capacitance is caused.
From the structural representation shown in Fig. 3 A it will be seen that switch mosfet 301 electrically connects with the circuit substrate 305.Heat sink 302 is attached directly in the one side of switch mosfet 301, and heat sink 302 is generally made up of conductor.Heat sink 302 and fixed cell 303 (conductor) together clamp switch mosfet 301, and a part for fixed cell 303 is fixed and is electrically connected to metal shell 304.Heat sink 302 electrically connects with the source electrode of switch mosfet 301.
Owing to heat sink 302 is conductor, heat sink 302 and switch mosfet 301 can produce parasitic capacitance Cxeq, and two electrodes of this electric capacity Cxeq are heat sink 302 and the drain electrode of switch mosfet 301 respectively.
Fig. 3 B is shown in the operating process of changer the equivalent circuit diagram existed in the case of parasitic capacitance Cp and parasitic capacitance Cxeq.
From the circuit diagram of Fig. 3 B it can be seen that owing to there is parasitic capacitance Cxeq in circuit, form new current loop 310 between switch mosfet 301 and parasitic capacitance Cxeq, as shown in Figure 3 B.Major part in the electric current Icm of input side to be flowed to can be diverted in current loop 310, and consumes in this current loop 310, so that the interference to input reduces.
In the structure shown in Fig. 3 A, utilize heat sink 302 and switch mosfet 301 to form parasitic capacitance Cxeq, form current loop 310, thus reduce the interference electric current entering changer input.
But, as can be seen from Figure 3A, the volume of heat sink 302 is the biggest, causes changer entirety to be difficult to miniaturization.On the other hand, heat sink 302 or fixed cell 303 may be discharged by the grid of switch mosfet 301, have undesirable effect.
Therefore, in order to optimize scheme of the present utility model further, Fig. 4 illustrates the exploded view for reducing the structure disturbed produced by parasitic capacitance according to another embodiment of this utility model.
As shown in Figure 4, switch mosfet 401 and thermal insulation layer 402, sheet metal 403 cambium layer stack structure.Switch mosfet 401, thermal insulation layer 402 and sheet metal 403 have the identical or end surface shape of approximation.And thermal insulation layer 402 is arranged between switch mosfet 401 and sheet metal 403.The lower section of sheet metal 403 is provided with protuberance 413.Protuberance 413 can be made to bend towards switch mosfet 401 by various processing methods, make when switch mosfet 401, thermal insulation layer 402 and sheet metal 403 are stacked together, the source electrode 411 of switch mosfet 401 can contact with this protuberance 413, to form electrical connection.
Fig. 5 shows the schematic diagram of the structure 500 that switch mosfet 401 stacks with thermal insulation layer 402, metal plate layer 403.
In one embodiment, adhesives can be coated on the two sides of thermal insulation layer 402, thus bonding with sheet metal 403 and switch mosfet 401.This adhesives can be to have high thermal conductivity and the heat-conducting glue of good electricity property absolutely, such as, organosilicon heat-conducting glue, epoxide resin AB glue, polyurethane adhesive, heat-conducting silicone grease etc..
In another embodiment of the present utility model, thermal insulation layer 402 inherently one layer of insulation the layer of adhesive material of good heat conductivity, such as epoxy resin heat conductive insulating glue etc..
In changer energising running, the thermal source of heating is switch mosfet 401, and heat is transferred to sheet metal 403 by thermal insulation layer 402.
Owing to sheet metal 403, thermal insulation layer 402 are almost identical with the end surface shape of switch mosfet 401 so that the stepped construction volume for switch mosfet 401 is substantially reduced, thus the effective area being greatly saved in inverter circuit board.Further, by arranging thermal insulation layer 402 between sheet metal 403 and switch mosfet 401, can avoid the grid of switch mosfet 401 that sheet metal 403 is discharged, thus eliminate potential harmful effect.
In order to avoid switch mosfet to discharge changer metal-back further, this utility model is it is further contemplated that go out to arrange one layer of insulation crust on laminated construction 500.
Fig. 6 shows the insulation crust 600 being arranged on switching layer stack structure according to another embodiment of the present utility model.
As shown in Figure 6, the inwall of insulation crust 600 is close to switching layer stack structure 500, and the electrode of switch mosfet is exposed in lower section, can be by the electrode welding that exposes to the circuit board of changer.By forming insulation crust 600 on switching layer stack structure 500, can prevent switch mosfet from discharging to the metal shell of changer.
In one embodiment, can previously prepared insulation crust 600 so that it is size matches with switching layer stack structure.Then, insulation crust 600 is directly sleeved on switching layer stack structure, thus forms the structure shown in Fig. 6.
In another embodiment, by methods such as brushing, dip-coating, sprayings, thermoplastic or thermosetting resin can be applied on switching layer stack structure so that the surface in addition to the electrode of switch mosfet is all wrapped by, thus forms insulation crust 600.
At changer run duration, switch mosfet can generate heat.In order to switch mosfet is dispelled the heat, can also be arranged on each switch mosfet and arrange individually such as large-scale heat radiation adnexaes such as fin-shaped fin, to obtaining good radiating effect, but large-scale heat radiation adnexa is set and can increase the volume of switch mosfet, but also complexity and the cost of manufacture can be increased.
In order to overcome, switch mosfet assembly volume is big, manufacture the shortcoming complicated, cost is high, and this utility model envisions the assembling scheme of another kind of switch mosfet.Fig. 7 illustrates the axonometric chart that insulation crust is directly attached to metal shell according to an embodiment of the present utility model.
As it is shown in fig. 7, the switch mosfet assembly 701 with insulation crust is directly attached on the metal shell 702 of changer.The area of metal shell 702 is very big, is therefore also used as the radiator of switch mosfet assembly 701.It is separately provided fin-shaped fin relative to for switch mosfet assembly, utilizes metal shell 702 can save big quantity space as radiator.In other words, metal shell 702 instead of the function of fin.Owing to the area of dissipation of metal shell is much larger than fin, so radiating efficiency is higher than the scheme being separately provided fin for switch mosfet assembly.
In an embodiment of the present utility model, it be also possible to use metal holder 703 and be fixed on metal shell 702 by the switch mosfet assembly 701 with insulation crust, at this moment metal shell 702 is close in the lateral ends face of insulation crust, in order to heat radiation.
It is to say, in this embodiment, it is not necessary to it is separately provided heat sink and can obtain heat sinking function.The bolt 704 fixing metal holder in Fig. 7 is not passed through switch mosfet assembly.But, it should be appreciated by one skilled in the art that the mode of fixing switch mosfet assembly is not limited to use the mode of metal holder 703, as long as making sheet metal can fit on metal shell 702.Such as, metal shell 702 can be affixed to by heat-conducting glue switch mosfet assembly.Or by the various alligator clamps that arrange on metal shell 702 top, switch mosfet can be fixed to metal shell 702.
In an embodiment of the present utility model, by when fitting to metal shell 702 with the switch mosfet assembly 401 of insulation crust, thermal insulation layer 402 and sheet metal 403 in switch mosfet stepped construction are placed between switch mosfet 401 and metal shell 702 rather than are directly attached on metal shell 702 by switch mosfet 401.This is because the drain electrode of sheet metal 403 and switch mosfet 401 forms the two-stage of parasitic capacitance Cxeq, and sheet metal should be arranged on a side end face of the switch mosfet close to drain electrode, and the source of switch mosfet 401 heating is to embed the part within switch mosfet 401 in drain electrode, drain electrode embed part within switch mosfet 401 should also be as the parts of discrete heat effect closer to, that is, closer to the metal shell 702 from the present embodiment.
Table 1 below shows the scheme being attached directly on metal shell by switch mosfet assembly and is separately provided the Contrast on effect of fin for switch mosfet assembly.
Table 1
More than test ambient temperature is 25 degrees Celsius, and point for measuring temperature is the side that switch mosfet is not attached at metal shell, temperature of detection in every 5 minutes after running 1 hour.
From above table 1 it can be seen that the scheme that switch mosfet assembly is attached directly on metal shell is better than being separately provided for switch mosfet assembly the effect of fin, and utilize metal holder to fix switch mosfet assembly and can further enhance radiating effect.
In an embodiment of utility model, can not be that sheet metal 403, thermal insulation layer 402 arrange insulation crust with the stepped construction of switch mosfet 401, but making sheet metal 403 fit to metal shell by non-conductive adhesive material, the coating zone of this non-conductive adhesive material extends to metal shell 702 at the area periphery bonding with sheet metal 403.It is also possible to use metal holder 703 to be fixed to by switch module on metal shell 702, at this moment metal shell 702 is close in the lateral ends face of insulation crust, in order to heat radiation.
Although described above is each embodiment of the present utility model, however, it is to be understood that they are intended only as what example presented, and without limitation.For those skilled in the relevant art it is readily apparent that it can be made various combination, modification and change without departing from spirit and scope of the present utility model.Therefore, width of the present utility model disclosed herein and scope should not limited by above-mentioned disclosed exemplary embodiment, and should define according only to appended claims and equivalent thereof.
Claims (11)
1. the switch module used in Switching Power Supply, it is characterised in that described switch module includes:
Switch；
The side being arranged on described switch the sheet metal coupled with described switch；
Wherein said Switching Power Supply includes that metal shell, the insulation of described switch module fit to outside described metal
Shell.
2. switch module as claimed in claim 1, it is characterised in that described switch module also includes arranging
Thermal insulation layer between described switch and described sheet metal.
3. switch module as claimed in claim 2, it is characterised in that described switch is metal-oxide half
Conductor field effect transistor M OSFET switchs, described switch, described sheet metal and described thermal insulation layer
There is identical end surface shape, and described sheet metal also has protuberance, in order to described MOSFET
The source electrode electrical connection of switch.
4. switch module as claimed in claim 3, it is characterised in that described thermal insulation layer is by bonding
Material and described sheet metal and described switch mosfet bonding cambium layer stack structure.
5. switch module as claimed in claim 3, it is characterised in that described thermal insulation layer is that insulation is led
Heat bonding material layer, described sheet metal and described switch mosfet are by described insulating heat-conductive adhesives
The bonding cambium layer stack structure of layer.
6. switch module as described in claim 4 or 5, it is characterised in that described switch module also includes
Insulation crust, the inwall of described insulation crust is close to described stepped construction, and switch mosfet is exposed in lower section
Electrode.
7. switch module as claimed in claim 6, it is characterised in that by adhesives by insulation crust
It is fixed on described metal shell.
8. switch module as described in any one in claim 1-5, it is characterised in that described sheet metal presss from both sides
Between described switch and described metal shell.
9. switch module as described in any one in claim 1-5, it is characterised in that described sheet metal leads to
Crossing non-conductive adhesive material and fit to described metal shell, the coating zone of described non-conductive adhesive material extends to
Metal shell is at the area periphery with metal bonding film.
10. switch module as described in any one in claim 1-5, it is characterised in that use clip will
Described switch module is fixed on described metal shell.
11. 1 kinds of Switching Power Supplies, including:
Metal shell；
Being arranged on the changer in described metal shell, be used for converting input voltage into output voltage, it is special
Levying and be, described changer includes that switch module, described switch module include:
Mos field effect transistor switch mosfet；
The side being arranged on described switch mosfet the sheet metal coupled with described switch, wherein said
Switch module insulation fits to described metal shell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620267046.4U CN205583994U (en) | 2016-03-31 | 2016-03-31 | Switch module and use switching power supply of this switch module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620267046.4U CN205583994U (en) | 2016-03-31 | 2016-03-31 | Switch module and use switching power supply of this switch module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205583994U true CN205583994U (en) | 2016-09-14 |
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ID=56863838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620267046.4U Active CN205583994U (en) | 2016-03-31 | 2016-03-31 | Switch module and use switching power supply of this switch module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205583994U (en) |
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2016
- 2016-03-31 CN CN201620267046.4U patent/CN205583994U/en active Active
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