CN205576257U - Make device of semiconductor base piece - Google Patents
Make device of semiconductor base piece Download PDFInfo
- Publication number
- CN205576257U CN205576257U CN201620213362.3U CN201620213362U CN205576257U CN 205576257 U CN205576257 U CN 205576257U CN 201620213362 U CN201620213362 U CN 201620213362U CN 205576257 U CN205576257 U CN 205576257U
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- substrate
- heating
- thermal spraying
- supporting part
- winding
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Abstract
The utility model provides a make device of semiconductor base piece. The utility model discloses a device is in with the setting including seal chamber inside first heating portion, hot spraying rifle and the supporting part of seal chamber, the exit end setting of hot spraying rifle is in the exit end below of first heating portion, and the hot spraying rifle with the supporting part can relative movement, the supporting part have the base plate with be used for right the base plate carries out the second heating portion of heating, the base plate sets up the below of hot spraying rifle. The utility model discloses a high, the low in manufacturing cost of device material utilization rate when making the semiconductor base piece, in addition, the semiconductor base piece size of manufacturing is big, thickness is controllable, purity is high, and application prospect is extensive.
Description
Technical field
This utility model relates to a kind of semiconductor chip manufacturing technology, is specifically related to a kind of manufacture semiconductor-based
The device of sheet.
Background technology
At present, traditional fossil energy occupies the major part of energy resource supply always.But, along with fossil
The continuous minimizing of energy reserve, continuing to increase and to problems such as the extreme influence of environment of exploitation difficulty,
It is badly in need of development new forms of energy.
The substrate that semiconductor chip is made up of semi-conducting material, it is widely used in integrated circuit, light
The fields such as volt generating.Silicon applies most semi-conducting materials as a kind of, on earth rich reserves, open
Adopt easily, the therefore great development potentiality of silicon solar generation technology.
At present, utilizing silicon to prepare semiconductor chip and generally use hubbing, the method produces big, the ring that consumes energy
Environment pollution is serious, and particularly the method needs to carry out cutting into slices to prepare the semiconductor chip of monolithic, easily causes
Semi-conducting material is wasted, and the utilization rate of material is relatively low.Meanwhile, the semiconductor chip that the method manufactures is utilized
Size is less, is difficult to molding when manufacturing large-size semiconductor chip；Additionally, the semiconductor chip manufactured
Thickness generally compared with big, impurity is many, not only manufacturing cost is high, and cannot manufacture the semiconductor chip of flexibility,
Drawbacks described above greatly have impact on the development of semicon industry.
Utility model content
This utility model provides a kind of device manufacturing semiconductor chip, utilizes the quasiconductor that this device manufactures
Sizes of substrate is big, thickness is controlled, purity is high, particularly can manufacture the semiconductor chip of flexibility, application
Prospect is extensive.
This utility model provides a kind of device manufacturing semiconductor chip, including sealing cavity and being arranged on institute
State the first heating part, thermal spraying gun and the supporting part sealing inside cavity,
The port of export of described thermal spraying gun is arranged on below the port of export of described first heating part, and described
Thermal spraying gun and described supporting part can relative movements；
Described supporting part has substrate and for the second heating part heating described substrate, described base
Plate is arranged on the lower section of described thermal spraying gun.
In this utility model, described sealing cavity is for providing sealing, dustless, the thermal spraying ring of insulation
Border, seals the temperature of inside cavity and should be above the fusing point of semi-conducting material, thus beneficially semi-conducting material
Spraying.
Further, inwall and/or outer wall at described sealing cavity are provided with heat-insulation layer.Due to thermal spraying
Shi Gaowen rapid heat dissipation, therefore from the standpoint of energy-conservation, can use that Thermal Conductivity at High Temperature is low, service life
Long insulation material carries out interior external thermal insulation to each relevant device implementing thermal spraying, thus saves the energy, subtracts
Little energy consumption.
The mode of described thermal spraying gun with described supporting part relative movement is the most strictly limited by this utility model
System, such as, can make supporting part be relatively fixed and make thermal spraying gun move, or make thermal spraying gun be relatively fixed
And make supporting part move.
In one embodiment, the bottom interval at described supporting part is provided with multiple roller, so that institute
State supporting part to move relative to described thermal spraying gun.
Second heating part of the present utility model is for heating described substrate.In one embodiment,
Described second heating part includes heating chamber and Duo Gen heating rod, and described heating chamber is arranged on below described substrate,
Described many heating rods are successively set on described heating intracavity portion along the length direction of described substrate.Real at this
Executing in mode, the temperature of each heating rod can be adjusted alone and control, thus is beneficial to operation of lowering the temperature
Enforcement.
Further, device of the present utility model also includes the winding-up portion being arranged on described surface, institute
Stating winding-up portion and have injection tube and be arranged on the shower nozzle of described injection tube one end, described shower nozzle has and leans outward
The nozzle tiltedly arranged.Can outwards jet the impurity on semiconductor chip in the winding-up portion of this set-up mode.
In another embodiment, device of the present utility model also includes the spray being arranged on described surface
Blowing portion, described winding-up portion has injection tube and is arranged on the shower nozzle of described injection tube one end, described shower nozzle energy
The most described enough injection tube swings.The winding-up portion of this set-up mode can swing on winding-up semiconductor chip
Impurity.
Further, device of the present utility model also includes blower fan, blast pipe and dust removal unit, described air intake
One end of pipe is connected with described blower fan, and the other end of described blast pipe connects with described sealing cavity, described
Dust removal unit is arranged on described blast pipe.Described blower fan, blast pipe and dust removal unit are set for ensureing sealing
The dustfree environment of inside cavity.
The structure of described dust removal unit is the most strictly limited by this utility model, can be that the routine of this area is removed
Dirt equipment.In one embodiment, described dust removal unit has casing and multiple stacking is arranged on described casing
Interior basket strainer, is provided with adhesive layer on described basket strainer.Wherein, adhesive layer such as can use resistance to
The coating such as the epoxy resin of high temperature is formed, this set-up mode good dedusting effect.
Utilize manufacture semiconductor chip of the present utility model device manufacture semiconductor chip, can include as
Lower step:
Semi-conducting material is heated to molten condition, obtains fused semiconductor material；
Utilize thermal spraying gun described fused semiconductor material thermal jet to be applied on substrate, lower the temperature subsequently, make base
Fused semiconductor material solidification on plate, obtains semiconductor chip.
Wherein, described semi-conducting material is the most strictly limited, can be that the element of this area routine is partly led
The materials such as body, inorganic compound semiconductor, organic compound semiconductor, amorphous state and liquid semiconductor,
Include but not limited to polysilicon, germanium, selenium, GaAs, cadmium telluride, Cadmium arsenide, zinc oxide etc..Permissible
It is understood by, the heating-up temperature of semi-conducting material is should be more than the melting temperature of semi-conducting material, from
And it is beneficial to obtain the semi-conducting material of molten condition；Specifically, heating-up temperature can be than semi-conducting material
Melting temperature height 300-400 DEG C, heating-up temperature such as can be 1400-2000 DEG C, be further
1600-1800℃。
Thermal spraying refers to the semi-conducting material atomized spray of molten condition to substrate surface, lowers the temperature subsequently
Solidify thus formation of deposits thin film or the process of substrate.When carrying out thermal spraying, ambient temperature should be high
In the fusing point of semi-conducting material, thus the spraying of beneficially semi-conducting material；Additionally, environment should be dustless,
Thus it is beneficial to ensure the purity of semiconductor chip.
Thermal spraying gun of the present utility model is used for fused semiconductor atomising material is ejected into substrate surface,
It should be resistant to high temperature and atomization uniformly, the most strictly limits it, can be to contact or non-connect
Touch thermal spraying gun, such as Aerodynamic Heating spray gun, depletion of QI thermal spraying gun, rotation cup thermal spraying gun etc.；Special
Not, when using gas to be atomized, the temperature of gas should be above the fusing point of semi-conducting material,
Thus the spraying of beneficially semi-conducting material.
In this utility model, substrate is used for bearing semiconductor material, i.e. through thermal spraying gun atomized spray
Fused semiconductor material fall within substrate, it is to be understood that substrate surface should flat smooth also
And substrate should be resistant to the temperature of more than semi-conducting material fusing point, its material is the most strictly limited
System, such as, can be resistant to elevated temperatures metal or nonmetallic materials.
Device of the present utility model utilizes hot spray process to prepare semiconductor chip, its to the size of substrate without sternly
Lattice requirement, the chi width of the semiconductor chip i.e. manufactured does not limits, and can be configured according to real needs, especially
It it is the semiconductor chip that can manufacture large-size.Additionally, device of the present utility model also can be according to real needs
Manufacture the semiconductor chip of different-thickness, particularly can manufacture the semiconductor chip of below thickness 50 μm,
Now semiconductor chip is flexible, and range of application is more extensive.Device of the present utility model is partly led in manufacture
Without cutting into slices during body substrate, thus without causing semi-conducting material to waste, the utilization rate of material is high,
Advantageously reduce manufacturing cost.
Further, it is also possible to mat formation in advance on substrate crystal seed, the such as one end at substrate are mated formation crystal seed,
When carrying out thermal spraying, fused semiconductor material can be made to spray to the other end from substrate crystal seed, so that melting
Semi-conducting material forms crystal during cooling solidification.
When utilizing device of the present utility model to carry out thermal spraying, related process is controlled parameter and does not make strictly
Limit, can close according to relevant parameters such as the material of the semiconductor chip of required manufacture, size, thickness
Reason is arranged.For example, it is possible to the speed controlling described thermal spraying is 0.1-0.5L/s, spraying 0.1-0.5L the most per second
Fused semiconductor material.
It is possible to further the speed controlling described cooling is 0.1-10 DEG C/min.Cooling method is not made tight
Lattice limit, such as, can be continuous cooling, gradient cooling etc..Specifically, when semi-conducting material is silicon,
The speed that can control cooling is 0.2-2 DEG C/min；When semi-conducting material is zinc oxide, the speed of cooling can be controlled
Degree is 5-10 DEG C/min；Semi-conducting material is other compound-materials such as GaAs, cadmium telluride, Cadmium arsenide
Time, the speed that can control cooling is 1-5 DEG C/min.In concrete scheme of the present utility model, the most permissible
The heater arranging temperature-controllable below substrate realizes the heating to substrate and cooling.
Further, before carrying out described cooling, it is also possible to the fused semiconductor material on described substrate
Material winding-up temperature purifies higher than the noble gas of described semi-conducting material fusing point.Winding-up noble gas is used
In the impurity removed on semiconductor chip, thus improve the purity of semiconductor chip.It is understood that
Should not expose substrate when winding-up, injection method is the most strictly limited, such as can outwards jet,
Swing winding-up etc..
In this utility model, thermal spraying gun and substrate can relative movement, thus realize continuous uniform
Spraying.Such as, when carrying out described thermal spraying, can be with heat described in the speed continuous moving of 0.1-2m/min
Spray gun or described substrate；Specifically, when semi-conducting material is silicon, the speed of continuous moving can be
0.1-0.5m/min；When semi-conducting material is the compound-materials such as GaAs, cadmium telluride, Cadmium arsenide, continuously
The speed of movement can be 0.5-2m/min.
Further, it is also possible to include that described semiconductor chip is carried out photoengraving or antireflective processes.Can
To use the usual manner of this area to carry out described photoengraving or antireflective process；Photoengraving is in order to partly to lead
The nanometer grid that nanometer grid, the such as length of side are 10-50nm is formed on body substrate；Through photoengraving or anti-reflection
The semiconductor chip penetrating process can be formed directly in without encapsulation cell piece, or forms encapsulation after packaged glass
Cell piece.
This utility model device produces consume energy little, non-environmental-pollution, green when manufacturing semiconductor chip
Environmental protection, it does not results in the waste of semi-conducting material, and stock utilization is high, and low cost of manufacture, cost is only
For tradition hubbing 1/6；Further, the semiconductor-based chip size utilizing this device manufacture does not limits, particularly
Can manufacture large-size substrate, the thickness of semiconductor chip is controlled, particularly can manufacture thickness less than 50 μm
Flexible substrate, the semiconductor chip impurity of manufacture is few, and purity may be up to 13-15 " 9 " (i.e. 99.
Arithmetic point after be 13-15 9), percent defective is low, and the market competitiveness is strong, and application prospect is extensive.
Accompanying drawing explanation
Fig. 1 is the structural representation of the device manufacturing semiconductor chip of this utility model one embodiment；
Fig. 2 is that the device manufacturing semiconductor chip utilizing this utility model one embodiment manufactures quasiconductor
The process schematic representation of substrate.
Description of reference numerals:
1: seal cavity；2: the first heating parts；3: thermal spraying gun；4: substrate；5: the second heating parts；
51: heating chamber；52: heating rod；6: roller.
Detailed description of the invention
For making the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with this practicality
Novel drawings and Examples, are carried out clearly and completely the technical scheme in this utility model embodiment
Describe, it is clear that described embodiment is a part of embodiment of this utility model rather than whole realities
Execute example.Based on the embodiment in this utility model, those of ordinary skill in the art are not making creativeness
The every other embodiment obtained under work premise, broadly falls into the scope of this utility model protection.
As it is shown in figure 1, the device manufacturing semiconductor chip includes sealing cavity 1 and being arranged on sealing cavity
The first heating part 2, thermal spraying gun 3 and supporting part within 1, the port of export of thermal spraying gun 3 is arranged on
Below the port of export of one heating part 2, and thermal spraying gun 3 can relative movement with supporting part；Supporting part
Having substrate 4 and for the second heating part 5 heating substrate 4, substrate 4 is arranged on thermal spraying
The lower section of rifle 3.
Seal cavity 1 to be used for providing sealing, dustless, the thermal spraying environment of insulation, seal cavity 1 internal
Temperature should be above the fusing point of semi-conducting material, thus the spraying of beneficially semi-conducting material；Additionally, can
To arrange heat-insulation layer (not shown) at the inwall and/or outer wall that seal cavity 1, thus save the energy, subtract
Little energy consumption.
The mode of thermal spraying gun 3 with supporting part relative movement is the most strictly limited, such as, can make supporting part
It is relatively fixed and makes thermal spraying gun 3 move, or make thermal spraying gun 3 be relatively fixed and make supporting part move.
When supporting part moves, multiple roller 6 can be set at the bottom interval of supporting part.
In one embodiment, the second heating part 5 can include heating chamber 51 and Duo Gen heating rod 52,
Heating chamber 51 is arranged on below substrate 4, and many heating rods 52 set gradually along the length direction of substrate 4
Inside heating chamber 51.In this approach, the temperature of each heating rod 52 can be adjusted alone and
Control, thus be beneficial to the enforcement of cooling operation.
Further, said apparatus can also include the winding-up portion (not shown) being arranged on above substrate 4,
Winding-up portion has injection tube and is arranged on the shower nozzle of injection tube one end, and shower nozzle has the spray of outward-dipping setting
Mouth.Can outwards jet the impurity on semiconductor chip in the winding-up portion of this set-up mode.
In another embodiment, said apparatus can also include being arranged on the winding-up portion of surface (not
Diagram), winding-up portion has injection tube and is arranged on the shower nozzle of injection tube one end, and shower nozzle can be jetted relatively
Pipe swings.The winding-up portion of this set-up mode can swing the impurity on winding-up semiconductor chip.
Further, said apparatus can also include blower fan, blast pipe and dust removal unit, the one of blast pipe
End is connected with blower fan, and the other end of blast pipe connects with sealing cavity, and dust removal unit is arranged on blast pipe.
Blower fan, blast pipe and dust removal unit are set for ensureing to seal the dustfree environment of inside cavity.Remove above-mentioned
The structure in dirt portion the most strictly limits, and can be the conventional dust removal equipment of this area.At an embodiment
In, the basket strainer that dust removal unit has a casing and multiple stacking is arranged in casing, basket strainer is arranged
There is adhesive layer.This set-up mode good dedusting effect.
Specifically include as in figure 2 it is shown, utilize said apparatus to manufacture flexible silicon substrate:
In the sealing cavity 1 that temperature is about 1800 DEG C, the first heating part 2 is utilized to be heated by polysilicon
To about 1800 DEG C, making polysilicon is molten condition；Mat formation in advance in one end (left end) of substrate 4 list
Crystal silicon, utilizes the second heating part 5 to heat substrate 4, when heating, respectively in heating chamber 51
Heating rod 52 be controlled, making the temperature of substrate 4 at undertaking molten state silicon is about 1800 DEG C, with
Rear thermal spraying gun 3 is utilized molten state silicon thermal jet to be applied on substrate 4 with the spraying rate of about 0.3L/s,
When thermal spraying, make molten state silicon start from monocrystal silicon one end of substrate 4 extend, and utilize roller 6 with
The speed continuous moving substrate 4 of about 0.3m/min.Molten state silicon winding-up temperature on substrate 4 is
The noble gas of about 1800 DEG C, after the substrate 4 that blown off by impurity, controls each heating rod 52, with 1 DEG C/min
The speed continuous cooling of left and right, makes the molten state silicon on substrate 4 gradually solidify, and forms crystalline substance in process of setting
Body, obtains the flexible silicon substrate that thickness is 50 μm, and its purity is 15 " 9 " (arithmetic point of i.e. 99.
After be 15 9).Further, it is also possible to flexible silicon substrate is carried out photoengraving or antireflective processes.
Specifically include additionally, utilize said apparatus to manufacture GaAs substrate:
In the sealing cavity 1 that temperature is about 1600 DEG C, GaAs is heated to about 1600 DEG C, makes
GaAs is molten condition.Utilize thermal spraying gun 3 with the spraying rate of about 0.5L/s by molten state arsenic
Gallium thermal jet is applied on substrate 4, when thermal spraying, with the speed continuous moving substrate 4 of about 1m/min.
The noble gas that molten state GaAs winding-up temperature is about 1600 DEG C on substrate 4, blows off impurity
After substrate 4, with the speed continuous cooling of 3 DEG C/min, so that the molten state GaAs on substrate 4 is gradually
Solidification, obtains the GaAs substrate that thickness is thickness 100 μm, and its purity is 13 " 9 " (i.e. 99.
After arithmetic point it is 13 9).
Last it is noted that various embodiments above is only in order to illustrate the technical solution of the utility model, and
Non-to its restriction；Although this utility model being described in detail with reference to foregoing embodiments, ability
The those of ordinary skill in territory is it is understood that it still can be to the technical scheme described in foregoing embodiments
Modify, or the most some or all of technical characteristic is carried out equivalent；And these amendment or
Person replaces, and does not make the essence of appropriate technical solution depart from the model of this utility model each embodiment technical scheme
Enclose.
Claims (8)
1. the device manufacturing semiconductor chip, it is characterised in that include sealing cavity and being arranged on institute
State the first heating part, thermal spraying gun and the supporting part sealing inside cavity,
The port of export of described thermal spraying gun is arranged on below the port of export of described first heating part, and described
Thermal spraying gun and described supporting part can relative movements；
Described supporting part has substrate and for the second heating part heating described substrate, described base
Plate is arranged on the lower section of described thermal spraying gun.
Device the most according to claim 1, it is characterised in that described sealing cavity inwall and
/ or outer wall be provided with heat-insulation layer.
Device the most according to claim 1, it is characterised in that at the bottom interval of described supporting part
It is provided with multiple roller.
Device the most according to claim 1, it is characterised in that described second heating part includes heating
Chamber and Duo Gen heating rod, described heating chamber is arranged on below described substrate, and described many heating rods are along described
The length direction of substrate is successively set on described heating intracavity portion.
Device the most according to claim 1, it is characterised in that also include arranging on the substrate
The winding-up portion of side, described winding-up portion has injection tube and is arranged on the shower nozzle of described injection tube one end, described
Shower nozzle has the nozzle of outward-dipping setting.
Device the most according to claim 1, it is characterised in that also include arranging on the substrate
The winding-up portion of side, described winding-up portion has injection tube and is arranged on the shower nozzle of described injection tube one end, described
Shower nozzle can the most described injection tube swing.
Device the most according to claim 1, it is characterised in that also include blower fan, blast pipe and remove
Dirt portion, one end of described blast pipe is connected with described blower fan, the other end of described blast pipe and described sealing
Cavity connects, and described dust removal unit is arranged on described blast pipe.
Device the most according to claim 7, it is characterised in that described dust removal unit has casing with many
Individual stacking is arranged on the basket strainer in described casing, is provided with adhesive layer on described basket strainer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620213362.3U CN205576257U (en) | 2016-03-18 | 2016-03-18 | Make device of semiconductor base piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620213362.3U CN205576257U (en) | 2016-03-18 | 2016-03-18 | Make device of semiconductor base piece |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205576257U true CN205576257U (en) | 2016-09-14 |
Family
ID=56869454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620213362.3U Expired - Fee Related CN205576257U (en) | 2016-03-18 | 2016-03-18 | Make device of semiconductor base piece |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205576257U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105671474A (en) * | 2016-03-18 | 2016-06-15 | 李光武 | Method and device for manufacturing semiconductor substrates |
-
2016
- 2016-03-18 CN CN201620213362.3U patent/CN205576257U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105671474A (en) * | 2016-03-18 | 2016-06-15 | 李光武 | Method and device for manufacturing semiconductor substrates |
| CN105671474B (en) * | 2016-03-18 | 2018-11-30 | 李光武 | The method and apparatus for manufacturing semiconductor chip |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160914 Termination date: 20190318 |
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| CF01 | Termination of patent right due to non-payment of annual fee |