CN205562789U - Infrared transmitting circuit - Google Patents
Infrared transmitting circuit Download PDFInfo
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- CN205562789U CN205562789U CN201620251566.6U CN201620251566U CN205562789U CN 205562789 U CN205562789 U CN 205562789U CN 201620251566 U CN201620251566 U CN 201620251566U CN 205562789 U CN205562789 U CN 205562789U
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Abstract
The utility model discloses an infrared transmitting circuit, including power module, PWM generator, single monostable flip -flop, MOS pipe driver and infrared transmitting tubes, wherein, power module provides power supply voltage for this circuit, the PWM generator is connected with single monostable flip -flop for produce PWM ripples signal, single monostable flip -flop is connected with MOS pipe driver for receive the drive ripples signal that PWM ripples signal and output pulse width are 40ns, MOS pipe driver is connected with infrared transmitting tubes for receive drive ripples signal and drive infrared transmitting tubes and send the infrared light, infrared transmitting tubes adopts the OSRAM SPL_LLXX of company series infrared wave launching tube. The technical scheme of the utility model, adopt simple circuit structure to realize infrared transmitting circuit, greatly reduced the cost, simultaneously, through adopting SPL_LLXX series infrared transmitting tubes, the precision and the distance of infrared range finding have been improved greatly.
Description
Technical field
This utility model belongs to infrared technique field, particularly relates to a kind of infrared transmitting circuit.
Background technology
In prior art, infrared technique is generally used for range finding field, utilizes infrared transmitting circuit to launch a branch of ellipse
The infrared waves of cone, are received the infrared waves being reflected by photoelectric cell, and timer measures infrared beams
From being transmitted into time of reception, calculate from observer's range-to-go.Due to prior art infrared emission
Circuit transmission power is relatively low, transmitting infrared waves wave band is not made rationally selection, and infrared light is in an atmosphere
During transmission, part luminous energy can be absorbed by atmospheric molecule so that unit are light energy reduces, and also has another
Part is scattered, and causes the optical energy loss on the direction of propagation.Thus have impact on precision and the distance of infrared distance measurement.
Therefore, for the defect of prior art, it is necessary that proposing a kind of technical scheme deposits to solve prior art in fact
Problem.
Utility model content
In view of this, a kind of circuit structure of necessary offer is simple, the infrared transmitting circuit of low cost, and
Precision and the distance of infrared distance measurement can be improved.
For the defect overcoming prior art to exist, this utility model provides techniques below scheme:
A kind of infrared transmitting circuit, including power module, PWM generator, monostable flipflop, MOS
Pipe driver and infrared transmitting tube, wherein,
Described power module provides supply voltage for this circuit；
Described PWM generator is connected with described monostable flipflop, is used for producing PWM ripple signal；
Described monostable flipflop is connected with described metal-oxide-semiconductor driver, is used for receiving described PWM ripple letter
Number and output pulse width be the driving ripple signal of 40ns；
Described metal-oxide-semiconductor driver is connected with described infrared transmitting tube, is used for receiving described driving ripple signal
And drive described infrared transmitting tube to send infrared light；
Described infrared transmitting tube uses OSRAM company SPL_LLXX series of IR ripple transmitting tube.
Preferably, described monostable flipflop include the first chip U1, the first electric capacity C1, the second electric capacity C2,
3rd electric capacity C3 and the first resistance R1, wherein, described first chip U1 uses monostable flipflop chip
SN74LS221；One end of described first resistance R1 outfan+5v that powers with power module is connected, described
The other end of the first resistance R1 respectively with one end and first chip U1 the 15th foot of described 3rd electric capacity C3
Being connected, the other end of described 3rd electric capacity C3 is connected with described first chip U1 the 14th foot；
Output that one end of described first electric capacity C1 and the second electric capacity C2 is connected and common and power module is powered
End+5v and the first chip U1 the 3rd foot are connected, described first electric capacity C1 and the other end of the second electric capacity C2
It is connected and is jointly connected with earth terminal and first chip U1 the first foot；Described PWM ripple signal inputs to institute
State the first chip U1 crus secunda；Described first chip U1 the 4th foot output drives ripple signal to described MOS
Drive pipe.
Preferably, described metal-oxide-semiconductor driver includes the second chip U2, the 4th electric capacity C4, the 5th electric capacity
C5, the second resistance R2 and the 3rd resistance R3, wherein, described second chip U2 uses Elantec company
MOSFET driving chip EL7104；
One end of described second resistance R2 outfan+12v that powers with power module is connected, described second resistance
The other end of R2 and one end of described 4th electric capacity C4, one end of the 5th electric capacity C5, described second chip
U2 the first foot and octal are connected, described 4th electric capacity C4, the other end and the earth terminal phase of the 5th electric capacity C5
Even；The input of described driving ripple signal is to described second chip U2 crus secunda；Described second chip U2 the 6th foot
It is connected with the 7th foot and is jointly connected with one end of described 3rd resistance R3, described 3rd resistance R3's
The other end is connected with SPL_LLXX series of IR ripple transmitting tube the first foot.
Preferably, described PWM generator uses chip microcontroller.
Preferably, what described monostable flipflop was exported drives the width of ripple signal by described first electricity
Resistance R1 and the 3rd electric capacity C3 determines, wherein said first resistance R1 is 2K Ω, and described 3rd electric capacity C3 is
10pF, the pulse width of described driving ripple signal is 40ns.
Preferably, it is 2us that described PWM generator can produce pulse width, and the cycle is the PWM of 1ms
Ripple signal.
Compared with prior art, the technical solution of the utility model, use simple circuit structure to realize red
Emission circuit, greatly reduces cost；Meanwhile, by using SPL_LLXX series of IR transmitting tube,
Substantially increase precision and the distance of infrared distance measurement.
Accompanying drawing explanation
Fig. 1 is the theory diagram of a kind of infrared transmitting circuit of this utility model.
Fig. 2 is the circuit theory diagrams of a kind of infrared transmitting circuit of this utility model.
Specific examples below will further illustrate this utility model in conjunction with above-mentioned accompanying drawing.
Detailed description of the invention
Below with reference to accompanying drawing, the utility model is described in further detail.
See Fig. 1, show the theory diagram of a kind of infrared transmitting circuit of this utility model, including power supply mould
Block, PWM generator, monostable flipflop, metal-oxide-semiconductor driver and infrared transmitting tube, wherein,
Power module provides supply voltage for this circuit；
PWM generator is connected with monostable flipflop, is used for producing PWM ripple signal；
Monostable flipflop is connected with metal-oxide-semiconductor driver, is used for receiving PWM ripple signal and exporting pulse
Width is the driving ripple signal of 40ns；
Metal-oxide-semiconductor driver is connected with infrared transmitting tube, is used for receiving driving ripple signal and driving infrared
Penetrate pipe and send infrared light；
Infrared transmitting tube uses OSRAM company SPL_LLXX series of IR ripple transmitting tube.Wherein, preferably
For SPL_LL90_3 infrared waves transmitting tube.Output is 70W, and transmitting center wavelength of light is 905nm,
Being positioned at second atmospheric window, atmospheric molecule is less to its absorption, effectively raises follow-up infrared receiver
The received optical power of pipe, precision and the distance of the most whole infrared acquisition also get a promotion.
Owing to the driving pulse width of SPL_LLXX series of IR ripple transmitting tube was only for tens nanoseconds, and receive
The second signal of level mostly uses FPGA and CPLD device to realize, and is greatly increased cost.In order to solve this
Technical problem, the utility model proposes the circuit structure of a kind of simple in construction.See Fig. 2, show this
The circuit theory diagrams of utility model infrared transmitting circuit, wherein, monostable flipflop include the first chip U1,
First electric capacity C1, the second electric capacity C2, the 3rd electric capacity C3 and the first resistance R1, the first chip U1 uses single
Steady state trigger chip SN74LS221；One end of first resistance R1 and power module are powered outfan+5v
Be connected, the other end of the first resistance R1 respectively with one end and the first chip U1 the 15th of the 3rd electric capacity C3
Foot is connected, and the other end of the 3rd electric capacity C3 and the first chip U1 the 14th foot are connected；
One end of first electric capacity C1 and the second electric capacity C2 is connected and common and power module is powered outfan+5v
And first chip U1 the 3rd foot be connected, the other end of the first electric capacity C1 and the second electric capacity C2 is connected and common
It is connected with earth terminal and first chip U1 the first foot；PWM ripple signal inputs to the first chip U1 second
Foot；First chip U1 the 4th foot output drives ripple signal to drive pipe to MOS.
First chip U1 is the monostable flipflop SN74LS221 of band Schmidt trigger input, its work
Principle is as follows: 1) when input signal by high level to low transition time, the trailing edge differential by RC
The spike that circuit is jumped under input produces.During due to stable state, for low level, therefore intervalometer overturns,
Output high level.Trigger enters temporary stable state.2) power supply is charged to C by R, when VC is raised to forward threshold
During value (2/3VCC) voltage, temporary stable state terminates.The time that stable state maintains temporarily is also the arteries and veins of trigger output
Rush the time of width.3) when VC is raised to positive threshold, the lower jumping spike of input also disappears, fixed
Time device upset, be output as low level, trigger enters stable state.
When clear terminal CLR is low level, no matter which kind of signal A, B connect, and outfan Q always keeps low electricity
Flat, Q keeps high level；When CLR pin is high level, and B foot is also high level, if A foot is by height
Level suddenly becomes low level, then Q foot exports a high level pulse accordingly；When CLR pin is high level,
When A foot is low level, if B foot is suddenly become high level by low level, then Q foot exports a high level accordingly
Pulse.What monostable flipflop was exported drives the width of ripple signal by the first resistance R1 and the 3rd electric capacity C3
Determine.
Further, metal-oxide-semiconductor driver include the second chip U2, the 4th electric capacity C4, the 5th electric capacity C5,
Second resistance R2 and the 3rd resistance R3, wherein, the second chip U2 uses the MOSFET of Elantec company
Driving chip EL7104；
One end of second resistance R2 outfan+12v that powers with power module is connected, another of the second resistance R2
Hold the one end with the 4th electric capacity C4, one end of the 5th electric capacity C5, the second chip U2 the first foot and octal phase
Even, the 4th electric capacity C4, the other end of the 5th electric capacity C5 are connected with earth terminal；Drive the input of ripple signal to the
Two chip U2 crus secundas；Second chip U2 the 6th foot and the 7th foot is connected and common with the 3rd resistance R3
One end be connected, the other end of the 3rd resistance R3 and SPL_LLXX series of IR ripple transmitting tube the first foot
It is connected.
This utility model selects to employ a MOSFET driving chip that Elantec company produces
EL7104.This chip novelty devise turbocharging circuit, extend input voltage range so that
Output voltage range is widened the most accordingly.It is that a carrying out on the basis of original clock chip is improved
Integrated drive chips, decreases mistake, solves clock jitter problem, shortens time delay, the most also
There is driving force at a high speed.The peak point current of this chip output reaches as high as 4A, has stronger band and bears
Loading capability, is widely used, and is usually used in MOSFET driving, ultrasonic transducer driving etc..It addition, EL7104
Also there is relatively low input capacitance and output impedance, the characteristic such as discerptible output interface.
In a preferred embodiment, PWM generator uses chip microcontroller.In the market
Single-chip microcomputer cannot directly export and meet the driving signal that nanosecond requires, this utility model have employed single-chip microcomputer
The mode combined with the monostable flipflop of band Schmidt trigger input, it is achieved thereby that nanosecond letter
Number output.Driven the width of ripple signal by the first resistance R1 and the 3rd due to what monostable flipflop exported
Electric capacity C3 determines, the most in actual applications, the first resistance R1 is 2K Ω, and the 3rd electric capacity C3 is 10pF,
It is 2us that control single chip computer produces pulse width, and the cycle is the PWM ripple signal of 1ms, the most exportable pulse width
Degree is the driving ripple signal of 40ns.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses this
Utility model.Multiple amendment to these embodiments will be aobvious and easy for those skilled in the art
Seeing, generic principles defined herein can be in the situation without departing from spirit or scope of the present utility model
Under, realize in other embodiments.Therefore, this utility model be not intended to be limited to shown in this article these
Embodiment, and it is to fit to the widest scope consistent with principles disclosed herein and features of novelty.
Claims (6)
1. an infrared transmitting circuit, it is characterised in that include power module, PWM generator, monostable
State trigger, metal-oxide-semiconductor driver and infrared transmitting tube, wherein,
Described power module provides supply voltage for this circuit；
Described PWM generator is connected with described monostable flipflop, is used for producing PWM ripple signal；
Described monostable flipflop is connected with described metal-oxide-semiconductor driver, is used for receiving described PWM ripple letter
Number and output pulse width be the driving ripple signal of 40ns；
Described metal-oxide-semiconductor driver is connected with described infrared transmitting tube, is used for receiving described driving ripple signal also
Described infrared transmitting tube is driven to send infrared light；
Described infrared transmitting tube uses OSRAM company SPL_LLXX series of IR ripple transmitting tube.
Infrared transmitting circuit the most according to claim 1, it is characterised in that described monostable flipflop
Including the first chip U1, the first electric capacity C1, the second electric capacity C2, the 3rd electric capacity C3 and the first resistance R1, its
In, described first chip U1 uses monostable flipflop chip SN74LS221；The one of described first resistance R1
Holding the outfan+5v that powers with power module to be connected, the other end of described first resistance R1 is respectively with the described 3rd
One end of electric capacity C3 and the first chip U1 the 15th foot are connected, and the other end of described 3rd electric capacity C3 is with described
First chip U1 the 14th foot is connected；
One end of described first electric capacity C1 and the second electric capacity C2 is connected and common and power module is powered outfan
+ 5v and the first chip U1 the 3rd foot are connected, and the other end of described first electric capacity C1 and the second electric capacity C2 is connected
And be jointly connected with earth terminal and first chip U1 the first foot；The input of described PWM ripple signal is to the most described the
One chip U1 crus secunda；Described first chip U1 the 4th foot output drives ripple signal to drive pipe to described MOS.
Infrared transmitting circuit the most according to claim 1, it is characterised in that described metal-oxide-semiconductor driver
Including the second chip U2, the 4th electric capacity C4, the 5th electric capacity C5, the second resistance R2 and the 3rd resistance R3, its
In, described second chip U2 uses the MOSFET driving chip EL7104 of Elantec company；
One end of described second resistance R2 outfan+12v that powers with power module is connected, described second resistance R2
The other end and one end of described 4th electric capacity C4, one end of the 5th electric capacity C5, second chip U2 the first foot
Being connected with octal, described 4th electric capacity C4, the other end of the 5th electric capacity C5 are connected with earth terminal；Described drive
Dynamic ripple signal input is to described second chip U2 crus secunda；Described second chip U2 the 6th foot and the 7th foot are connected
Connect and be jointly connected with one end of described 3rd resistance R3, the other end of described 3rd resistance R3 with
SPL_LLXX series of IR ripple transmitting tube the first foot is connected.
Infrared transmitting circuit the most according to claim 1, it is characterised in that described PWM generator is adopted
Use chip microcontroller.
Infrared transmitting circuit the most according to claim 2, it is characterised in that described monostable trigger
What device was exported drives the width of ripple signal to be determined by described first resistance R1 and the 3rd electric capacity C3, wherein said
First resistance R1 is 2K Ω, and described 3rd electric capacity C3 is 10pF, and the pulse width of described driving ripple signal is
40ns。
Infrared transmitting circuit the most according to claim 5, it is characterised in that described PWM generator produces
Raw pulse width is 2us, and the cycle is the PWM ripple signal of 1ms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620251566.6U CN205562789U (en) | 2016-03-29 | 2016-03-29 | Infrared transmitting circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620251566.6U CN205562789U (en) | 2016-03-29 | 2016-03-29 | Infrared transmitting circuit |
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| CN205562789U true CN205562789U (en) | 2016-09-07 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107274658A (en) * | 2017-06-16 | 2017-10-20 | 浙江理工大学 | A kind of ultrahigh speed infrared radio information transmitting methods |
| CN107437333A (en) * | 2017-06-16 | 2017-12-05 | 浙江理工大学 | A kind of ultrahigh speed infrared radio information transfer device |
-
2016
- 2016-03-29 CN CN201620251566.6U patent/CN205562789U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107274658A (en) * | 2017-06-16 | 2017-10-20 | 浙江理工大学 | A kind of ultrahigh speed infrared radio information transmitting methods |
| CN107437333A (en) * | 2017-06-16 | 2017-12-05 | 浙江理工大学 | A kind of ultrahigh speed infrared radio information transfer device |
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| GR01 | Patent grant | ||
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| TR01 | Transfer of patent right |
Effective date of registration: 20210910 Address after: 311800 111 g TA TA Road, Tao Zhu street, Zhuji, Shaoxing, Zhejiang. Patentee after: Zhejiang HUAQUAN Microelectronics Co.,Ltd. Address before: 311800 111 g TA TA Road, Tao Zhu street, Zhuji, Shaoxing, Zhejiang. Patentee before: ZHEJIANG ZHUJI QICHUANG ELECTRONIC SCIENCE & TECHNOLOGY Co.,Ltd. |