CN205552315U - Processing sapphire wafer's dispersion strengthening mill making devices - Google Patents
Processing sapphire wafer's dispersion strengthening mill making devices Download PDFInfo
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- CN205552315U CN205552315U CN201620114133.6U CN201620114133U CN205552315U CN 205552315 U CN205552315 U CN 205552315U CN 201620114133 U CN201620114133 U CN 201620114133U CN 205552315 U CN205552315 U CN 205552315U
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- Prior art keywords
- mill
- dispersion
- strengtherning
- sapphire wafer
- mould
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Links
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 42
- 239000010980 sapphire Substances 0.000 title claims abstract description 41
- 238000005728 strengthening Methods 0.000 title claims abstract 7
- 239000006185 dispersion Substances 0.000 title abstract 6
- 239000008187 granular material Substances 0.000 claims abstract description 29
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 239000003989 dielectric material Substances 0.000 claims abstract description 8
- 230000005672 electromagnetic field Effects 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 19
- 239000011159 matrix material Substances 0.000 claims description 14
- 238000009434 installation Methods 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 20
- 239000000463 material Substances 0.000 description 20
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 14
- 239000007767 bonding agent Substances 0.000 description 13
- 238000000465 moulding Methods 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 239000006061 abrasive grain Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000013007 heat curing Methods 0.000 description 5
- 238000007514 turning Methods 0.000 description 5
- IYRDVAUFQZOLSB-UHFFFAOYSA-N copper iron Chemical compound [Fe].[Cu] IYRDVAUFQZOLSB-UHFFFAOYSA-N 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 238000003746 solid phase reaction Methods 0.000 description 4
- 238000010671 solid-state reaction Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 239000010425 asbestos Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910052895 riebeckite Inorganic materials 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- -1 Lauxite Polymers 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000011415 microwave curing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The utility model provides a processing sapphire wafer's dispersion strengthening mill making devices, is including being used for placing the mill mould of dispersion strengthening mill body, mill die holding is on the support, the base member of dispersion strengthening mill body is dielectric material, dielectric material contains polar molecule and dispersion strengthening granule, the device is still including being used for making the interior microwave generator who takes place the microwave electromagnetic field and realize the heating of cavity, the mill mould is located microwave generator's cavity. The utility model provides a low surface damage, efficiency be higher, effectively be applicable to the large size processing sapphire wafer's dispersion strengthening mill making devices.
Description
Technical field
This utility model relates to Precision and Ultra-precision Machining technical field, a kind of mill producing device for sapphire wafer Ultra-precision Turning.
Background technology
Sapphire, because of its excellent performance, is widely used in precision optical machinery and optoelectronic information field, is the epitaxially grown main backing material of third generation semi-conducting material (GaN) in LED.Sapphire single-crystal (α-Al2O3) belongs to the hardest, crisp, difficult-to-machine material, extreme hardness (Mohs' hardness 9).At present, sapphire wafer process technology and equipment apply mechanically processing technique and the equipment of monocrystalline silicon piece substantially, lack the optimization to its each stage process of processing so that overall processing efficiency is low, and yield rate is low.The exemplary process flow process that sapphire wafer production in enormous quantities is used: the operations such as (multi-wire saw), smooth (grinding, rough lapping, smooth grinding), surface finishing (rough polishing, finishing polish) of cutting into slices.Wherein, sapphire wafer smooth grinding operation uses red copper dish or stannum dish to make mill, with diamond abrasive as abrasive particle with the free abrasive processing technique of alkaline slurries.Sapphire wafer smooth grinding operation uses red copper dish or stannum dish to process as abrasive disk, free abrasive mode, it is impossible to meets sapphire wafer high efficiency simultaneously and removes and low damage processing request.By changing machinery and the physical property of mill material, reach low surface damage and the balance of high material removing rate of sapphire wafer attrition process.
Removing and low damage processing request for realizing sapphire wafer high efficiency, a kind of complex copper iron mill proposes.Complex copper iron mill is mainly made up of red copper powder, straight iron powder, bonding agent and filler four part, and they constitute the overall of mill.Tradition mill is the most hot-forming on forming method when making, mostly mill base substrate heat hardening molding is the surface utilizing the modes such as heat radiation, conduction of heat or convection current to transfer heat to mill base substrate, then heat transfer is to the inside of object, it is a kind of temperature-rise period from outside to inside, body surface and the bigger thermograde of internal existence.It is improper that mill base substrate heat hardening forming process temperature controls, and mill, by molding mill defects such as generation cracking, warpages, affects mill and uses.Particularly mill size is the biggest, mill base substrate heat hardening molding is the most difficult, and mill base substrate heat hardening molding has become the bottleneck of constraint mill quality.
Therefore, a kind of mill for the low surface damage of sapphire wafer, high efficiency Ultra-precision Turning is researched and developed particularly necessary.
Summary of the invention
In order to overcome existing fixation abrasive grain mill manufacturing technology easily cracking, inefficient, large-sized deficiency cannot be applicable to, this utility model provides a kind of low surface damage, efficiency is higher, be effectively applicable to the dispersion-strengtherning mill producing device of large-sized processing sapphire wafer.
This utility model solves its technical problem and be the technical scheme is that
A kind of dispersion-strengtherning mill producing device processing sapphire wafer, including the mill mould for placing dispersion-strengtherning mill base substrate, described mill mould is rack-mount, the matrix of described dispersion-strengtherning mill base substrate is dielectric material, described dielectric material contains polar molecule and dispersion-strengtherning granule, described device also includes occurring microwave electromagnetic field to realize the microwave generator of heating in making cavity, and described mill mould is positioned at the cavity of microwave generator.
Further, described support is installed on a spinstand, and the rotating shaft of described turntable is stretched out outside described cavity, and described rotating shaft is connected with driving means.
Further, the cavity installation infrared temperature measurer of described microwave generator.
Technology of the present utility model is contemplated that: to mill heat cure molding, utilizes microwave magnetic field sensing to produce electric field and adds theory of heat, it is achieved mill base substrate entirety heats, and improves the uniformity of heating.Change tradition fixation abrasive grain mill heat cure molding to add the modes such as heat utilization heat radiation, conduction of heat or convection current and transfer heat to the surface of heated mill base substrate, then heat transfer is to inside mill base substrate, mill billet surface and the bigger thermograde of internal existence, in turn result in the molding mill defects such as fixation abrasive grain mill cracking, warpage.
Dispersion-strengtherning is a kind of composite new method of materialogy research in recent years, adds that stability is high, Second Phase Particle in Dispersed precipitate in parent metal, to hinder blapharoplast dislocation motion, reaches to strengthen matrix purpose.Diffusing particle addition is little with matrix material score ratio, does not affects the physicochemical properties that parent metal is intrinsic.Use pure red copper powder, straight iron powder, bonding agent, dispersion-strengtherning granule, with dispersion-strengtherning principle make copper iron-based mill for composite mill, its elastic modelling quantity, mill material surface hardness controllable, processing characteristics is between fine copper dish and stannum dish processing characteristics, reach low surface damage and the balance of high material removing rate of sapphire wafer attrition process, and then effectively reduce needed for follow-up polishing process process time, improve overall processing efficiency, reduce production cost.
Meanwhile, the described dispersion-strengtherning granule (such as cerium oxide, silicon oxide etc.) used in the mill of dispersion-strengtherning principle can produce solid state reaction with sapphire workpiece in the course of processing, it is achieved workpiece material is efficiently removed.This is because workpiece (sapphire wafer) surface exists planar defect, the atomic binding energy of surface of the work is in certain distribution.When dispersion-strengtherning granule streaks at Sapphire wafer surface, because of effect mechanically and thermally, the atom phase counterdiffusion of dispersion-strengtherning granule and Sapphire wafer surface, some dispersion-strengtherning granule atoms are clamp-oned sapphire wafer material surface, are reduced the combination energy of sapphire wafer material surface；When next dispersion-strengtherning granule streaks Sapphire wafer surface, due to the reduction of sapphire wafer top layer atomic binding energy, material is removed easily.Therefore, rely on the chemical machinery effect produced between dispersion-strengtherning granule and sapphire wafer material to realize the removal of material, promote the efficient Ultra-precision Turning of sapphire wafer.
The beneficial effects of the utility model are mainly manifested in: 1. when mill heat cure, microwave magnetic induction is used to produce electric field mode of heating, microwave can uniformly penetrating to the inside of mill base substrate, improve the uniformity of heating, solve heat in conventional thermal curing mode and be delivered to the surface of heated mill base substrate, then heat transfer is to inside mill base substrate, mill billet surface and internal there is bigger thermograde, prevents the mill forming defect generations such as cracking, warpage.Compared with conventional thermal solidification mode of heating, the processing cost of microwave electromagnetic mode of heating heat cure molding fixation abrasive grain mill reduces, and easy to make.2. the copper iron-based mill using dispersion-strengtherning principle is composite mill, solve employing fine copper dish of former sapphire wafer lappingout stage and stannum dish, the mill of homogenous material, its machinery and physical property are non-adjustable, realize the performance controllable such as cuprio mill elastic modelling quantity, mill material surface hardness, make the cuprio mill processing characteristics of dispersion-strengtherning principle between fine copper dish and stannum dish processing characteristics, reach low surface damage and the balance of high material removing rate of sapphire wafer attrition process；3. the described dispersion-strengtherning granule (such as cerium oxide, silicon oxide etc.) used in the mill of dispersion-strengtherning principle can produce solid state reaction with sapphire workpiece in the course of processing, realize workpiece material effectively to remove, promote the efficient Ultra-precision Turning of sapphire wafer.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the dispersion-strengtherning mill producing device of processing sapphire wafer
Fig. 2 is dispersion-strengtherning principle schematic in matrix.
Fig. 3 is the mill attrition process schematic diagram of dispersion-strengtherning principle.
Detailed description of the invention
Below in conjunction with the accompanying drawings this utility model is further described.
With reference to Fig. 1～Fig. 3, a kind of dispersion-strengtherning mill producing device processing sapphire wafer, including the mill mould 2 for placing dispersion-strengtherning mill base substrate 1, described mill mould 2 is arranged on support 5, the matrix of described dispersion-strengtherning mill base substrate 1 is dielectric material, described dielectric material contains polar molecule and dispersion-strengtherning granule, and described device also includes occurring microwave electromagnetic field to realize the microwave generator 4 of heating in making cavity, and described mill mould 2 is positioned at the cavity 8 of microwave generator.
Further, described support 5 is arranged on turntable 6, and the rotating shaft of described turntable 6 is stretched out outside described cavity, and described rotating shaft is connected with driving means 7.
In the present embodiment, dispersion-strengtherning mill base substrate 1 is placed in microwave magnetic field, the magnetic induction that described microwave magnetic field produces can induce electric field and produce electric current by metal powder surface in described mill, described electric current can produce heat in described metal dust, and then mill entirety is heated, microwave uniformly penetrating, to the inside of mill base substrate, improves the uniformity of heating.
Described dispersion-strengtherning mill includes following component: by mass percentage, and matrix material is pure red copper powder, 65～80%；Straight iron powder, 5～8%；Bonding agent 10～15%, dispersion-strengtherning granular materials 2～15%；Described dispersion-strengtherning granular materials be can with the material of sapphire wafer material generation solid state reaction.
Described bonding agent is thermosetting resin, described thermosetting resin includes following one or both and two or more combination: thermosetting resin, including: phenolic resin, Lauxite, melamine formaldehyde resin, epoxy resin, unsaturated-resin, polyurethane or polyimides.
Described dispersion-strengtherning granular materials is following one or both and two or more combination: cerium oxide, silicon oxide, ferrum oxide, magnesium oxide, chromium oxide, aluminium oxide or carborundum.
In the present embodiment, example 1: described cuprio mill based on dispersion-strengtherning principle includes following component: by mass percentage, and matrix material is pure red copper powder, 70%；Straight iron powder, 5%, bonding agent 15%, dispersion-strengtherning granular materials 10%, control mill mold surface temperature 120 ° ± 5 °；Example 2: matrix material is pure red copper powder, 75%；Straight iron powder, 6%；Bonding agent 12%, dispersion-strengtherning granular materials 7%, control mill mold surface temperature 150 ° ± 5 °；Example 3: matrix material is pure red copper powder, 65%；Straight iron powder, 8%；Bonding agent 12%, dispersion-strengtherning granular materials 15%, control mill mold surface temperature 180 ° ± 5 °；Example 4: matrix material is pure red copper powder, 80%；Straight iron powder, 5%；Bonding agent 10%, dispersion-strengtherning granular materials 5%, control mill mold surface temperature 210 ° ± 5 °；Example 5: matrix material is pure red copper powder, 78%；Straight iron powder, 5%；Bonding agent 15%, dispersion-strengtherning granular materials 2%, control mill mold surface temperature 100 ° ± 5 °.
When the dispersion-strengtherning mill described in making, first mix full and uniform with described bonding agent for described dispersion-strengtherning granular materials；Then described pure red copper powder and described straight iron powder are joined in the dispersion-strengtherning granular materials described in mix homogeneously and described bonding agent batch mixing by amount step by step, process uses mode of vibration stirring mixing, it is achieved pure red copper powder, straight iron powder, dispersion-strengtherning granule, bonding agent mix homogeneously；The dispersion-strengtherning mill mixed is made material evenly laid out in mill mold cavity, compressing, then described mill mould is placed in microwave oven, heat cure.
Fig. 1 is that microwave magnetic induction heating makes mill schematic diagram.Being placed on turntable 6 upper bracket 5 together with mill mould 2 by the dispersion-strengtherning mill base substrate 1 of extrusion forming, mill mould 2 uses ceramic material, has insulation asbestos outside mill mould.During solidification, the microwave generator 4 on microwave magnetic induction heaters cavity 8 sends microwave to mill base substrate 1.Driving means 7 (such as motor) is rotated by turntable 6, support 5 band movable grinding disc base substrate 1 and mill mould 2, makes microwave uniformly penetrating mill base substrate 1.The solidification incipient stage, because the absorbing property of mill mould 2 ceramic material, contribute to the rapid raising speed of mill base substrate.The final stage of microwave curing, relies on the insulation effect heating fixation abrasive grain mill base substrate of mill mould 2 external thermal insulation asbestos.Infrared radiation thermometer 3 is arranged on cavity 8, monitors mill mould 2 surface temperature, and then control microwave generator 4 launches power.
Fig. 2 is the dispersion-strengtherning principle schematic of mill.Grinding disc substrate 21 by producing deformation during shearing force, strengthens granule (such as SiO during attrition process2Granule) 22 Dispersed precipitate form Hard Inclusion in mill, and hinder the dislocation motion of matrix material 21, reach to change the effect of the performance parameters such as the overall elastic modelling quantity of mill, case hardness.
Fig. 3 is the mill attrition process schematic diagram of dispersion-strengtherning principle.Dispersion-strengtherning mill, with red copper powder 31 and straight iron powder 32 as matrix, strengthens granule 33 (such as SiO2 micropowder, hardness 7, less than sapphire but higher than fine copper) as reinforcement, bonding agent 34 to red copper powder 31, straight iron powder 32, strengthen granule 33 and play holding effect.Strengthen granule 33 Dispersed precipitate in red copper powder 31 and straight iron powder 32, form Hard Inclusion, realize adding mill based on dispersion-strengtherning principle in man-hour, its surface local plastic is better than red copper dish, diamond abrasive grain 35 big in mill liquid 37 can be made to be prone to be absorbed in disc surface, it is to avoid it produces big scratch damage to workpiece 36 (sapphire wafer) surface；Meanwhile, mill based on dispersion-strengtherning principle, its integral rigidity is better than stannum dish, under certain loads, can keep higher workpiece material clearance.In the course of processing, strengthen granule 33 and workpiece 36, under mechanically and thermally effect, produce solid state reaction between the two, promote the efficient Ultra-precision Turning of sapphire wafer.
Claims (3)
1. process a dispersion-strengtherning mill producing device for sapphire wafer, including for placing disperse
The mill mould of strengthening mill base substrate, described mill mould is rack-mount, it is characterised in that:
The matrix of described dispersion-strengtherning mill base substrate is dielectric material, and described dielectric material divides containing polarized
Son and dispersion-strengtherning granule, described device also includes occurring microwave electromagnetic field in making cavity
Realizing the microwave generator of heating, described mill mould is positioned at the cavity of microwave generator.
2. the dispersion-strengtherning mill producing device processing sapphire wafer as claimed in claim 1, its
It is characterised by: described support is installed on a spinstand, and described chamber is stretched out in the rotating shaft of described turntable
External, described rotating shaft is connected with driving means.
3. the dispersion-strengtherning mill producing device processing sapphire wafer as claimed in claim 1 or 2,
It is characterized in that: the cavity installation infrared temperature measurer of described microwave generator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620114133.6U CN205552315U (en) | 2016-02-03 | 2016-02-03 | Processing sapphire wafer's dispersion strengthening mill making devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620114133.6U CN205552315U (en) | 2016-02-03 | 2016-02-03 | Processing sapphire wafer's dispersion strengthening mill making devices |
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| Publication Number | Publication Date |
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| CN205552315U true CN205552315U (en) | 2016-09-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201620114133.6U Expired - Fee Related CN205552315U (en) | 2016-02-03 | 2016-02-03 | Processing sapphire wafer's dispersion strengthening mill making devices |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113043181A (en) * | 2021-02-02 | 2021-06-29 | 泉州众志新材料科技有限公司 | Forming method of resin diamond abrasive disc |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113043181A (en) * | 2021-02-02 | 2021-06-29 | 泉州众志新材料科技有限公司 | Forming method of resin diamond abrasive disc |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160907 Termination date: 20190203 |