CN205543165U - Integrated waveguide filter of high selectivity bimodulus substrate - Google Patents

Abstract

The utility model discloses an integrated waveguide filter of high selectivity bimodulus substrate, the middle and upper metal paster of wave filter just is equipped with input and output respectively in adjacent both sides for the rectangle, the input includes the first banded paster that is extended by last metal paster, first banded paster only basal portion links to each other with last metal paster, be equipped with L shape clearance and the 2nd L shape clearance between first banded paster both sides and the last metal paster respectively, the output includes the banded paster of the second that is extended by last metal paster, the banded paster of second only basal portion links to each other with last metal paster, be equipped with the 3rd L shape clearance and fourth L shape clearance between banded paster both sides of second and the last metal paster respectively, the plated -through hole is along the four sides setting of last metal paster, and the distance equals between two adjacent plated -through holes. The utility model discloses increase a transmission zero under the condition of increase external circuit not, improved the frequency selection nature of wave filter, simple structure, convenient processing.

Description

High selectivity bimodulus substrate integral wave guide filter

Technical field

This utility model relates to microwave device field, particularly relates to the filtering of high selectivity bimodulus substrate integration wave-guide Device.

Background technology

Substrate integration wave-guide is that in appearance in recent years, the one in microwave and millimeter wave field can be integrated in dielectric substrate In novel guided wave structure formed, it has, and insertion loss is little, it is low to radiate, power capacity advantages of higher, is usually used to structure Become wave filter.But, the wave filter that employing substrate integration wave-guide of the prior art is constituted the most only has a biography Defeated zero point, frequency selectivity is poor.

Utility model content

Utility model purpose: the purpose of this utility model is to provide a kind of high selectivity pair with two transmission zeros Mould substrate integral wave guide filter.

Technical scheme: high selectivity bimodulus substrate integral wave guide filter described in the utility model, including medium base Sheet, the upper and lower surface of dielectric substrate is respectively equipped with metal patch and lower metal patch, upper metal patch and Being connected by plated-through hole between lower metal patch, upper metal patch is rectangle and adjacent both sides are respectively equipped with input End and outfan, input includes the first banding paster extended by upper metal patch, the first banding paster only base Portion is connected with upper metal patch, is respectively equipped with the first l-shaped clearance between the first banding paster both sides and upper metal patch With the second l-shaped clearance, outfan includes the second banding paster extended by upper metal patch, the second banding paster Only base portion is connected with upper metal patch, is respectively equipped with the 3rd L-shaped between the second banding paster both sides and upper metal patch Gap and the 4th l-shaped clearance, plated-through hole is arranged along four limits of upper metal patch, and adjacent two metallization The spacing of through hole is equal.

Further, described in the plated-through hole of limit, input place setting, if the number of plated-through hole Be even number, then the number of the plated-through hole on the first banding paster both sides is identical, if odd number, then the first banding The number of the plated-through hole on paster both sides differs one；In the plated-through hole that limit, outfan place is arranged, The number of plated-through hole is if even number, then the number of the plated-through hole on the second banding paster both sides is identical, as Fruit is odd number, then the number of the plated-through hole on the second banding paster both sides differs one.

Further, described first l-shaped clearance and the second l-shaped clearance are symmetrical relative to the first banding paster, the 3rd L Shape gap and the 4th l-shaped clearance are symmetrical relative to the second banding paster.

Further, described first l-shaped clearance, the second l-shaped clearance, the 3rd l-shaped clearance and the 4th l-shaped clearance Shape size is identical, and the first l-shaped clearance includes orthogonal first long gap and the first short air gap, first short Length L of gap₂With width W₂Span such as formula (1), shown in (2):

$L_2\∈(\frac{1}{25}\mathrm{\λ},\frac{1}{11}\mathrm{\λ})---\left(1\right)$

$W_2\∈(\frac{1}{35}\mathrm{\λ},\frac{1}{15}\mathrm{\λ})---\left(2\right)$

In formula (1), (2), λ is:

$\mathrm{\λ}=\frac{c_0}{f_{TEm0n}}---\left(3\right)$

In formula (3), c₀For the light velocity in vacuum, f_TEmOnFor the resonant frequency of substrate integration wave-guide resonator cavity, such as formula (4) Shown in:

$f_{TEm0n}=\frac{c_0}{2\sqrt{{\mathrm{\ϵ}}_r}}\sqrt{{\left(\frac{m}{a_{eff}}\right)}^2+{\left(\frac{n}{b_{eff}}\right)}^2}---\left(4\right)$

In formula (4), m and n is positive integer, ε_rFor the relative dielectric constant of dielectric substrate, a_effAnd b_effIt is respectively base The effective width in sheet integrated wave guide resonance chamber and effective length, as shown in formula (5), (6):

$a_{eff}=a-\frac{D^2}{0.95P}---\left(5\right)$

$b_{eff}=b-\frac{D^2}{0.95P}---\left(6\right)$

In formula (5), (6), a is first metal in all plated-through holes of one limit setting of upper metal patch Changing through hole to the distance between last plated-through hole, b is the institute along the setting of another limit of upper metal patch Having in plated-through hole first plated-through hole to the distance between last plated-through hole, D is metallization The diameter of through hole, P is the distance between adjacent two plated-through holes.

Further, described wave filter uses dielectric constant to be 2.2, thickness is the dielectric substrate system of 0.508mm Making, the parameter of each several part is: first metal in all plated-through holes that one limit of upper metal patch is arranged Changing through hole is 20.6mm to distance a between last plated-through hole, sets along another limit of upper metal patch In all plated-through holes put, first plated-through hole to distance b between last plated-through hole is 20.6mm, the diameter D of plated-through hole are 1mm, and distance P between adjacent two plated-through holes is 2mm, Length L of the first banding paster_mFor 12.08mm, the width W of the first banding paster_mFor 1.6mm, the first banding Distance W between the plated-through hole that paster both sides are nearest_eFor 5.1mm, length L of the first long gap₁For 6.64mm, the width W of the first long gap₁For 0.1mm, length L of the first short air gap₂For 1.08mm, first The width W of short air gap₂For 0.6mm.

Beneficial effect: compared with prior art, this utility model has a following beneficial effect:

1) this utility model is by optimizing mutually perpendicular input and output end structure, at the excitation integrated ripple of substrate Conveniently realized additional direct-coupling path at intracavity while guide cavity bimodulus resonance, so introduce one new Transmission zero, so that wave filter has two transmission zeros, is effectively increased the frequency selectivity of wave filter；

2) this utility model does not increase the dimensioned area of wave filter while increasing a new transmission zero, Also without increasing any auxiliary circuit or device on circuit, in terms of existing technologies, have simple in construction, Advantage easy to process；

3) this utility model is applicable to the surface manufacturing process such as PCB, LTCC, it is simple to highly selective filter Planarization, integrated.

Accompanying drawing explanation

Fig. 1 is the axonometric chart of detailed description of the invention median filter of the present utility model；

Fig. 2 is the fractionation structure chart of detailed description of the invention median filter of the present utility model；

Fig. 3 is the structure chart of the upper metal patch of detailed description of the invention median filter of the present utility model；

Fig. 4 is the local structural graph of the upper metal patch of detailed description of the invention median filter of the present utility model；

Fig. 5 is the S parameter simulation result of detailed description of the invention median filter of the present utility model.

Detailed description of the invention

Below in conjunction with detailed description of the invention, the technical solution of the utility model is further introduced.

The utility model discloses a kind of high selectivity bimodulus substrate integral wave guide filter, as depicted in figs. 1 and 2, Including dielectric substrate 2, the upper and lower surface of dielectric substrate 2 is respectively equipped with metal patch 1 and lower metal patch Sheet 3, is connected by plated-through hole 13 between upper metal patch 1 and lower metal patch 3, and upper metal patch 1 is square Shape and adjacent both sides are respectively equipped with input and outfan, as it is shown on figure 3, input includes by upper metal patch 1 the first banding paster 11 extended, the first banding paster 11 only base portion is connected with upper metal patch 1, and first The first l-shaped clearance 111 and the second l-shaped clearance it is respectively equipped with between banding paster 11 both sides and upper metal patch 1 112, outfan includes the second banding paster 12 extended by upper metal patch 1, the second banding paster 12 only base Portion is connected with upper metal patch 1, is respectively equipped with the 3rd L between the second banding paster 12 both sides and upper metal patch 1 Shape gap 121 and the 4th l-shaped clearance 122.First l-shaped clearance 111 and the second l-shaped clearance 112 are relative to One banding paster 11 is symmetrical, and the 3rd l-shaped clearance 121 and the 4th l-shaped clearance 122 are relative to the second banding paster 12 is symmetrical, and the first l-shaped clearance the 111, second l-shaped clearance the 112, the 3rd l-shaped clearance 121 and the 4th L-shaped Gap 122 shape size is identical.Plated-through hole 13 is arranged along four limits of upper metal patch 1, and adjacent two The spacing of individual plated-through hole 13 is equal.

The structure of first l-shaped clearance is described below, thus can learn the structure of other three l-shaped clearances: such as Fig. 4 Shown in, the first l-shaped clearance 111 includes orthogonal first long gap 1111 and the first short air gap 1112, the The a length of L of one long gap 1111₁, the width of the first long gap 1111 is W₁, the length of the first short air gap 1112 Degree is L₂, the width of the first short air gap is W₂。

The dielectric substrate 2 that wave filter uses dielectric constant to be 2.2, thickness is 0.508mm makes, each several part Parameter as it is shown on figure 3, be: in all plated-through holes 13 that 1 one articles of limits of upper metal patch are arranged the One plated-through hole is 20.6mm to distance a between last plated-through hole, along upper metal patch 1 In all plated-through holes 13 that another limit is arranged first plated-through hole to last plated-through hole it Between distance b be 20.6mm, the diameter D of plated-through hole 13 is 1mm, adjacent two plated-through holes 13 it Between distance P be 2mm, length L of the first banding paster 11_mFor 12.08mm, the first banding paster 11 Width W_mFor 1.6mm, distance W between the plated-through hole 13 that the first banding paster 11 both sides are nearest_eFor 5.1mm, length L of the first long gap 1111₁For 6.64mm, the width W of the first long gap 1111₁For 0.1mm, Length L of the first short air gap 1112₂For 1.08mm, the width W of the first short air gap 1112₂For 0.6mm.

The S parameter curve of wave filter is as shown in Figure 5, it is seen that, there are in the frequency range of 11GHz～12GHz two Transmission zero.

Claims (5)

1. The highest selectivity bimodulus substrate integral wave guide filter, it is characterised in that: include dielectric substrate (2), be situated between The upper and lower surface of matter substrate (2) is respectively equipped with metal patch (1) and lower metal patch (3), upper gold Belong to and being connected by plated-through hole (13) between paster (1) and lower metal patch (3), upper metal patch (1) Being respectively equipped with input and outfan for rectangle and adjacent both sides, input includes being prolonged by upper metal patch (1) The the first banding paster (11) stretched out, the first banding paster (11) only base portion is connected with upper metal patch (1), Be respectively equipped with between first banding paster (11) both sides and upper metal patch (1) the first l-shaped clearance (111) and Second l-shaped clearance (112), outfan includes the second banding paster (12) extended by upper metal patch (1), Second banding paster (12) only base portion is connected with upper metal patch (1), the second banding paster (12) both sides with The 3rd l-shaped clearance (121) and the 4th l-shaped clearance (122), metal it is respectively equipped with between upper metal patch (1) Change through hole (13) along upper metal patch (1) four limits arrange, and adjacent two plated-through holes (13) it Spacing is equal.
2. High selectivity bimodulus substrate integral wave guide filter the most according to claim 1, it is characterised in that: Described along limit, input place arrange plated-through hole (13) in, plated-through hole (13) if number Be even number, then the number of the plated-through hole (13) on the first banding paster (11) both sides is identical, if odd number, Then the number of the plated-through hole (13) on the first banding paster (11) both sides differs one；Along outfan place In the plated-through hole (13) that limit is arranged, the number of plated-through hole (13) is if even number, then the second banding The number of the plated-through hole (13) on paster (12) both sides is identical, if odd number, then the second banding paster (12) The number of the plated-through hole (13) on both sides differs one.
3. High selectivity bimodulus substrate integral wave guide filter the most according to claim 1, it is characterised in that: Described first l-shaped clearance (111) and the second l-shaped clearance (112) are symmetrical relative to the first banding paster (11), 3rd l-shaped clearance (121) and the 4th l-shaped clearance (122) are symmetrical relative to the second banding paster (12).
4. High selectivity bimodulus substrate integral wave guide filter the most according to claim 3, it is characterised in that: Described first l-shaped clearance (111), the second l-shaped clearance (112), the 3rd l-shaped clearance (121) and the 4th L Shape gap (122) shape size is identical, and the first l-shaped clearance (111) includes orthogonal first long gap (1111) With the first short air gap (1112), length L of the first short air gap (1112)₂With width W₂Span such as formula (1), shown in (2):

   $L_2\∈(\frac{1}{25}\mathrm{\λ},\frac{1}{11}\mathrm{\λ})---\left(1\right)$

   $W_2\∈(\frac{1}{35}\mathrm{\λ},\frac{1}{15}\mathrm{\λ})---\left(2\right)$

   In formula (1), (2), λ is:

   $\mathrm{\λ}=\frac{c_0}{f_{TEm0n}}---\left(3\right)$

   In formula (3), c₀For the light velocity in vacuum, f_TEmOnFor the resonant frequency of substrate integration wave-guide resonator cavity, such as formula (4) Shown in:

   $f_{TEm0n}=\frac{c_0}{2\sqrt{{\mathrm{\ϵ}}_r}}\sqrt{{\left(\frac{m}{a_{eff}}\right)}^2+{\left(\frac{n}{b_{eff}}\right)}^2}---\left(4\right)$

   In formula (4), m and n is positive integer, ε_rFor the relative dielectric constant of dielectric substrate (2), a_effAnd b_effPoint Not Wei the effective width of substrate integration wave-guide resonator cavity and effective length, as shown in formula (5), (6):

   $a_{eff}=a-\frac{D^2}{0.95P}---\left(5\right)$

   $b_{eff}=b-\frac{D^2}{0.95P}---\left(6\right)$

   In formula (5), (6), a is in all plated-through holes (13) of (1) limit setting of upper metal patch First plated-through hole (13) arrives the distance between last plated-through hole (13), and b is along upper gold Belong to first plated-through hole (13) in all plated-through holes (13) that paster (1) another limit is arranged to arrive Distance between last plated-through hole (13), D is the diameter of plated-through hole (13), and P is adjacent Distance between two plated-through holes (13).
5. High selectivity bimodulus substrate integral wave guide filter the most according to claim 4, it is characterised in that: The dielectric substrate (2) that described wave filter uses dielectric constant to be 2.2, thickness is 0.508mm makes, each portion Point parameter be: in all plated-through holes (13) that (1) limit of upper metal patch is arranged first Plated-through hole (13) is 20.6mm to distance a between last plated-through hole (13), along upper gold Belong to first plated-through hole (13) in all plated-through holes (13) that paster (1) another limit is arranged to arrive Distance b between last plated-through hole (13) is 20.6mm, and the diameter D of plated-through hole (13) is 1mm, distance P between adjacent two plated-through holes (13) is 2mm, the length of the first banding paster (11) Degree L_mFor 12.08mm, the width W of the first banding paster (11)_mFor 1.6mm, the first banding paster (11) Distance W between the plated-through hole (13) that both sides are nearest_eFor 5.1mm, the length of the first long gap (1111) L₁For 6.64mm, the width W of the first long gap (1111)₁For 0.1mm, the length of the first short air gap (1112) Degree L₂For 1.08mm, the width W of the first short air gap (1112)₂For 0.6mm.