CN205542905U - Ultraviolet organic light emitting device - Google Patents
Ultraviolet organic light emitting device Download PDFInfo
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- CN205542905U CN205542905U CN201620088826.2U CN201620088826U CN205542905U CN 205542905 U CN205542905 U CN 205542905U CN 201620088826 U CN201620088826 U CN 201620088826U CN 205542905 U CN205542905 U CN 205542905U
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- layer
- electron injecting
- hole
- ultraviolet
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Abstract
The utility model discloses an ultraviolet organic light emitting device. The device includes substrate layer, anode layer, hole injection layer, hole transport layer, luminescent layer, electrontransport, electron injecting layer and reflective metal negative pole layer, is electron injecting layer 1.5nm for thickness 6nm's liF, substrate layer, anode layer, hole injection layer, hole transport layer, luminescent layer, electrontransport, electron injecting layer, reflective metal negative pole layer are spliced as an organic wholely in proper order. The utility model discloses utilize the heavy insulation layer as electron injecting layer, in improvement luminescent layer electron is poured into into through reducing the electronic the equilibrium in hole, therefore reaching the electron of equivalent amount the hole only needs lower current density during to the figure, has increased electronics and hole compound probability in the luminescent layer, produces the transmission of efficient near -ultraviolet light, has improved the luminous efficacy and the irradiance of ultraviolet OLED device.
Description
Technical field
The utility model belongs to technical field of semiconductor device, is specifically related to a kind of ultraviolet organic luminescent device.
Background technology
Have double-deck high brightness since C.W.Tang in 1987 et al. utility model, low-voltage organic electroluminescence is sent out
Since optical device (OLED), OLED just receives the extensive favor of people.OLED has abundant color representation ability, superelevation
Power efficiency, the superthin structure of about 100nm and machinery can be flexible etc. advantageous feature and show and solid-state photograph at novel flat-plate
Yield unusually brilliant results in the field such as bright.Through the development of more than 20 years, its technology came into practical stage.The luminescence of ultraviolet OLED
Wavelength is typically in 320nm-400nm scope, and also commonly referred to as near ultraviolet is luminous.The fast response time of ultraviolet organic luminescent device,
Mechanical flexibility is good, Ultrathin portable, be prone to build the advantage such as area lighting device, has the inorganic UV such as traditional Si C, ZnO and sends out
The unrivaled superior function of optical device.Therefore, ultraviolet OLED high density data storage, paint solidification, bio-sensing and
As the fields such as excitation source have potential application prospect.
Ultraviolet wavelength is shorter than visible ray, and energy is big, result in the organic material needs as ultra-violet light-emitting and possesses very
Wide band gap, therefore highest occupied molecular orbital (HOMO) energy level of ultraviolet luminous organic material is more much higher than visible ray.
Such as, the HOMO energy level that HOMO energy level is 6.1eV, OXD-7 of conventional ultraviolet luminous organic material CBP is 6.5eV, TAZ's
HOMO energy level is 6.6eV.The HOMO energy level of these organic materials differs with the work function of conventional transparent conductive anode (such as ITO)
Very big (work function of ITO is generally 4.7eV).Therefore hole is up to 1.5-2eV from ito anode to the potential barrier of ultra-violet light-emitting layer,
High hole injection barrier result in hole and is difficult to be injected in luminescent layer, result in the quantity in hole in ultraviolet OLED luminescent layer
Often fewer than the quantity of electronics a lot, this makes the balance of electron-hole in luminescent layer poor, the luminous efficiency of device and irradiation
Degree is difficult to improve.
The method generally overcoming this high hole injection barrier is introduced into hole injection layer to be increased hole and injects, and is aided with and mixes
Miscellaneous raising hole mobility, but this method injected with transmittability in hole of improving has for ultraviolet OLED the most very much
Limit, effect is not very good.
Utility model content
The utility model provides a kind of ultraviolet organic luminescent device, and this device is noted as electronics by introducing thick dielectric layer
Enter layer, be effectively improved luminous efficiency and the irradiation level of ultraviolet OLED.Electronics in Conventional UV OLED injects
Layer thickness generally takes 0.5nm-1nm, it is believed that be optimum size.The utility model break-through skill prejudice, utilizes thick dielectric layer to make
For electron injecting layer, reach to have only to lower current density during the electron-hole pair number of equivalent amount, add electronics with
The probability that hole is compound in luminescent layer, produces high efficiency black light and launches.Compared with Conventional UV OLED, this reality
All increase substantially by novel external quantum efficiency and irradiation level.The utility model overcomes in Conventional UV OLED single
Rely on raising hole to inject and improve, with transmittability, the limitation that carrier balance is not enough, and technique is simple, repeated
Good, thus at the aspect of constructing of high power ultraviolet OLED, there is highly important real value.
The technical solution of the utility model:
1. a ultraviolet organic luminescent device, including substrate layer, anode layer, hole injection layer, hole transmission layer, luminescence
Layer, electron transfer layer, electron injecting layer, reflective metals cathode layer, electron injecting layer be thickness be the LiF of 1.5nm-6nm；Substrate
Layer, anode layer, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, reflective metals cathode layer are suitable
Sequence is spliced and is integrated.
Accompanying drawing explanation
Fig. 1 is structure of the present utility model and external circuit schematic diagram.
In Fig. 1: 1. substrate layer；2. anode layer；3. hole injection layer；4. hole transmission layer；5. luminescent layer；6. electricity
Sub-transport layer；7. electron injecting layer；8. reflective metals cathode layer；9. power supply.
Fig. 2 is that the utility model difference electron injecting layer thickness embodiment is close at different electric currents from Conventional UV OLED
Irradiation level comparison diagram under Du.
Fig. 3 is that the utility model difference electron injecting layer thickness embodiment is close at different electric currents from Conventional UV OLED
The comparison diagram of the external quantum efficiency (EQE) under Du.
Fig. 4 be the utility model difference electron injecting layer thickness embodiment with the current density of Conventional UV OLED-
The comparison diagram of voltage relationship.
In Fig. 2-Fig. 4: device one thickness is general thickness；Device two thickness is 1.5nm；Device three thickness is 2.5nm；Device
Part four thickness is 4nm；Device five thickness is 6nm.
Detailed description of the invention
With embodiment, the utility model content is further elaborated below in conjunction with the accompanying drawings.
Substrate uses glass；Anode selects ITO indium oxide tin film, and sheet resistance is about 10 Ω/；Hole injection layer selects thickness
MoO for 2nm-5nm3；Hole transmission layer selects CBP material；TAZ material selected by luminescent layer；Electron transfer layer selects BPhen material
Material；Reflective metals cathode layer uses Al, and thickness is not less than 100nm；Electron injecting layer use LiF, its thickness take respectively 1.5nm,
2.5nm, 4nm and 6nm, constitute four embodiments.External circuit drives power supply to may select direct current 3V-20V, applies direct current on device
Voltage can observe near ultraviolet outgoing isolychn from anode side, and obtains the utility model ultraviolet OLED by pertinent instruments
The various parameter index comparison diagrams of device, as shown in figs 2-4.
Wherein:
CBP represents 4,4'-bis (carbazol-9-yl) biphenyl, and thickness is 10nm-40nm.
TAZ represents 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole, and thickness
For 10nm-40nm.
BPhen represents 4,7-diphenyl-1,10-phenanthroline, and thickness is 15nm-110nm.
Conventional UV OLED, electron injecting layer thickness is 0.5nm-1nm, using this device as of the present utility model right
Ratio exemplar (device one), obtains parameter index comparison diagram as shown in figs 2-4.
As shown in Figure 2, under same current density, the irradiance ratio routine of the utility model (device two～device five) is thick
The device (device one) of the electron injecting layer of degree all increases.Such as, it is 100mA/cm when current density2Time, device one
Irradiation level is 1.87mW/cm2, the irradiation level of device two is 2.28mW/cm2；The irradiation level of device three is 3.74mW/cm2；Device
The irradiation level of four is 3.29mW/cm2；The irradiation level of device five is 1.93mW/cm2；Device two, device three, device four, device five
Irradiance ratio device one be respectively increased 21.9%, 100%, 75.9%, 3.2%.Therefore, the utility model is greatly improved spoke
Illumination, it is thus achieved that beyond thought effect.
From the figure 3, it may be seen that the maximum external quantum efficiency (EQE) of device one is 1.07%@2.4mA/cm2, the maximum of device two
EQE is 1.3%@2.1mA/cm2, the maximum EQE of device three is 2.1%@2.5mA/cm2, the maximum EQE of device four is 1.7%@
2.3mA/cm2, the maximum EQE of device five is 1.15%@7.8mA/cm2, device two, device three, device four, the maximum of device five
EQE has been respectively increased 21.5% than device one, and 96.3%, 58.9%, 7.5%.Meanwhile, under same current density, device two～device
The EQE of part five is all high than device one.Therefore, when the thickness of electron injecting layer LiF is 1.5～6nm, it is possible to obtain thicker than conventional
The degree higher external quantum efficiency of (0.5-1nm) electron injecting layer, it is thus achieved that beyond thought effect.
As shown in Figure 4, under identical voltage, the current density ratio device one of device two～device five is lower, shows
Luminous efficiency of the present utility model and irradiation level are also improved.
Comprehensive above experimental data, it can be seen that the utility model is owing to breaching the inertial thinking of routine techniques, is abandoned
Rely on the mode improving hole injection with transmittability, and employing thick dielectric layer is as electron injecting layer, the most every technology
Index all obtains beyond thought effect.
Claims (5)
1. a ultraviolet organic luminescent device, including electron injecting layer, it is characterised in that: described electron injecting layer is that thickness is
The LiF of 1.5nm-6nm.
Ultraviolet organic luminescent device the most according to claim 1, it is characterised in that: the thickness of described electron injecting layer is
1.5nm-2.5nm。
Ultraviolet organic luminescent device the most according to claim 1, it is characterised in that: the thickness of described electron injecting layer is
2.5nm-4nm。
Ultraviolet organic luminescent device the most according to claim 1, it is characterised in that: the thickness of described electron injecting layer is
4nm-6nm。
5. according to the ultraviolet organic luminescent device according to any one of claim 1-4, it is characterised in that: also include substrate layer,
Anode layer, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, reflective metals cathode layer；Substrate layer, anode layer,
It is one that hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, reflective metals cathode layer order is spliced
Body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620088826.2U CN205542905U (en) | 2016-01-29 | 2016-01-29 | Ultraviolet organic light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620088826.2U CN205542905U (en) | 2016-01-29 | 2016-01-29 | Ultraviolet organic light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205542905U true CN205542905U (en) | 2016-08-31 |
Family
ID=56772855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620088826.2U Expired - Fee Related CN205542905U (en) | 2016-01-29 | 2016-01-29 | Ultraviolet organic light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205542905U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105552243A (en) * | 2016-01-29 | 2016-05-04 | 桂林电子科技大学 | Ultraviolet organic light emitting device and fabrication method thereof |
| CN109449313A (en) * | 2018-10-24 | 2019-03-08 | 桂林电子科技大学 | It is a kind of that the method for hole injection layer and the Organic Light Emitting Diode of building in Organic Light Emitting Diode are prepared based on sol-gel method |
-
2016
- 2016-01-29 CN CN201620088826.2U patent/CN205542905U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105552243A (en) * | 2016-01-29 | 2016-05-04 | 桂林电子科技大学 | Ultraviolet organic light emitting device and fabrication method thereof |
| CN109449313A (en) * | 2018-10-24 | 2019-03-08 | 桂林电子科技大学 | It is a kind of that the method for hole injection layer and the Organic Light Emitting Diode of building in Organic Light Emitting Diode are prepared based on sol-gel method |
| CN109449313B (en) * | 2018-10-24 | 2021-06-08 | 桂林电子科技大学 | Method for preparing hole injection layer in organic light-emitting diode based on sol-gel method and constructed organic light-emitting diode |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160831 Termination date: 20190129 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |